KR860001502A - 반도체레이저 - Google Patents
반도체레이저 Download PDFInfo
- Publication number
- KR860001502A KR860001502A KR1019850004333A KR850004333A KR860001502A KR 860001502 A KR860001502 A KR 860001502A KR 1019850004333 A KR1019850004333 A KR 1019850004333A KR 850004333 A KR850004333 A KR 850004333A KR 860001502 A KR860001502 A KR 860001502A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- semiconductor laser
- active layer
- current
- absorbing layer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59149239A JPH0685455B2 (ja) | 1984-07-18 | 1984-07-18 | 半導体レーザー |
JP84-149239 | 1984-07-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR860001502A true KR860001502A (ko) | 1986-02-26 |
Family
ID=15470921
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019850004333A KR0128711B1 (ko) | 1984-07-18 | 1985-06-19 | 반도체레이저 |
KR1019850004333A KR860001502A (ko) | 1984-07-18 | 1985-06-19 | 반도체레이저 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019850004333A KR0128711B1 (ko) | 1984-07-18 | 1985-06-19 | 반도체레이저 |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPH0685455B2 (ro) |
KR (2) | KR0128711B1 (ro) |
CA (1) | CA1253945A (ro) |
DE (1) | DE3525703A1 (ro) |
FR (1) | FR2568064A1 (ro) |
GB (1) | GB2163288A (ro) |
NL (1) | NL8502080A (ro) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5161167A (en) * | 1990-06-21 | 1992-11-03 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser producing visible light |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52143787A (en) * | 1976-05-26 | 1977-11-30 | Hitachi Ltd | Semiconductor laser |
DE3065856D1 (en) * | 1979-02-13 | 1984-01-19 | Fujitsu Ltd | A semiconductor light emitting device |
JPS5640292A (en) * | 1979-09-11 | 1981-04-16 | Fujitsu Ltd | Semiconductor laser |
US4329189A (en) * | 1980-02-04 | 1982-05-11 | Northern Telecom Limited | Channelled substrate double heterostructure lasers |
US4323859A (en) * | 1980-02-04 | 1982-04-06 | Northern Telecom Limited | Chanelled substrate double heterostructure lasers |
JPS5736882A (ja) * | 1980-08-15 | 1982-02-27 | Nec Corp | Sutoraipugatadaburuheterosetsugoreezasoshi |
JPS57170584A (en) * | 1981-04-15 | 1982-10-20 | Hitachi Ltd | Semiconductor laser device |
GB2105099B (en) * | 1981-07-02 | 1985-06-12 | Standard Telephones Cables Ltd | Injection laser |
JPS5967677A (ja) * | 1982-07-01 | 1984-04-17 | Semiconductor Res Found | 光集積回路 |
GB2139422B (en) * | 1983-03-24 | 1987-06-03 | Hitachi Ltd | Semiconductor laser and method of fabricating the same |
-
1984
- 1984-07-18 JP JP59149239A patent/JPH0685455B2/ja not_active Expired - Lifetime
-
1985
- 1985-06-19 KR KR1019850004333A patent/KR0128711B1/ko active
- 1985-06-19 KR KR1019850004333A patent/KR860001502A/ko not_active IP Right Cessation
- 1985-07-17 CA CA000486983A patent/CA1253945A/en not_active Expired
- 1985-07-18 DE DE19853525703 patent/DE3525703A1/de not_active Ceased
- 1985-07-18 GB GB08518182A patent/GB2163288A/en not_active Withdrawn
- 1985-07-18 FR FR8511015A patent/FR2568064A1/fr active Granted
- 1985-07-18 NL NL8502080A patent/NL8502080A/nl not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
CA1253945A (en) | 1989-05-09 |
NL8502080A (nl) | 1986-02-17 |
GB8518182D0 (en) | 1985-08-21 |
DE3525703A1 (de) | 1986-02-20 |
KR0128711B1 (ko) | 1998-04-07 |
JPH0685455B2 (ja) | 1994-10-26 |
JPS6127694A (ja) | 1986-02-07 |
FR2568064B1 (ro) | 1994-04-22 |
GB2163288A (en) | 1986-02-19 |
FR2568064A1 (fr) | 1986-01-24 |
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