KR850004660A - 감-방사선 조성물 - Google Patents
감-방사선 조성물 Download PDFInfo
- Publication number
- KR850004660A KR850004660A KR1019840008116A KR840008116A KR850004660A KR 850004660 A KR850004660 A KR 850004660A KR 1019840008116 A KR1019840008116 A KR 1019840008116A KR 840008116 A KR840008116 A KR 840008116A KR 850004660 A KR850004660 A KR 850004660A
- Authority
- KR
- South Korea
- Prior art keywords
- onium salt
- composition
- group
- phenolic resin
- radiation
- Prior art date
Links
- 230000005855 radiation Effects 0.000 title claims 5
- 150000003839 salts Chemical class 0.000 claims 10
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims 7
- 229920001568 phenolic resin Polymers 0.000 claims 7
- 239000005011 phenolic resin Substances 0.000 claims 7
- 230000003595 spectral effect Effects 0.000 claims 5
- 150000001412 amines Chemical class 0.000 claims 4
- 125000003118 aryl group Chemical group 0.000 claims 4
- 239000003504 photosensitizing agent Substances 0.000 claims 4
- 238000000034 method Methods 0.000 claims 3
- 229910052760 oxygen Inorganic materials 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- DZBUGLKDJFMEHC-UHFFFAOYSA-N acridine Chemical compound C1=CC=CC2=CC3=CC=CC=C3N=C21 DZBUGLKDJFMEHC-UHFFFAOYSA-N 0.000 claims 2
- 239000011248 coating agent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 2
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N coumarin Chemical compound C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 claims 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims 2
- -1 polycyclic hydrocarbon Chemical class 0.000 claims 2
- 229920005989 resin Polymers 0.000 claims 2
- 239000011347 resin Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- QGKMIGUHVLGJBR-UHFFFAOYSA-M (4z)-1-(3-methylbutyl)-4-[[1-(3-methylbutyl)quinolin-1-ium-4-yl]methylidene]quinoline;iodide Chemical compound [I-].C12=CC=CC=C2N(CCC(C)C)C=CC1=CC1=CC=[N+](CCC(C)C)C2=CC=CC=C12 QGKMIGUHVLGJBR-UHFFFAOYSA-M 0.000 claims 1
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 claims 1
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 claims 1
- 125000006656 (C2-C4) alkenyl group Chemical group 0.000 claims 1
- 125000006736 (C6-C20) aryl group Chemical group 0.000 claims 1
- AGIJRRREJXSQJR-UHFFFAOYSA-N 2h-thiazine Chemical compound N1SC=CC=C1 AGIJRRREJXSQJR-UHFFFAOYSA-N 0.000 claims 1
- JNRLEMMIVRBKJE-UHFFFAOYSA-N 4,4'-Methylenebis(N,N-dimethylaniline) Chemical compound C1=CC(N(C)C)=CC=C1CC1=CC=C(N(C)C)C=C1 JNRLEMMIVRBKJE-UHFFFAOYSA-N 0.000 claims 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims 1
- GJCOSYZMQJWQCA-UHFFFAOYSA-N 9H-xanthene Chemical compound C1=CC=C2CC3=CC=CC=C3OC2=C1 GJCOSYZMQJWQCA-UHFFFAOYSA-N 0.000 claims 1
- 239000004215 Carbon black (E152) Substances 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 239000004593 Epoxy Substances 0.000 claims 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims 1
- 125000000174 L-prolyl group Chemical group [H]N1C([H])([H])C([H])([H])C([H])([H])[C@@]1([H])C(*)=O 0.000 claims 1
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims 1
- 125000002252 acyl group Chemical group 0.000 claims 1
- 125000001931 aliphatic group Chemical group 0.000 claims 1
- 239000003513 alkali Substances 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 150000001450 anions Chemical class 0.000 claims 1
- VUEDNLCYHKSELL-UHFFFAOYSA-N arsonium Chemical class [AsH4+] VUEDNLCYHKSELL-UHFFFAOYSA-N 0.000 claims 1
- IWNNBBVLEFUBNE-UHFFFAOYSA-N bromonium Chemical compound [BrH2+] IWNNBBVLEFUBNE-UHFFFAOYSA-N 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 claims 1
- IGJWHVUMEJASKV-UHFFFAOYSA-N chloronium Chemical compound [ClH2+] IGJWHVUMEJASKV-UHFFFAOYSA-N 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 229960000956 coumarin Drugs 0.000 claims 1
- 235000001671 coumarin Nutrition 0.000 claims 1
- CZZYITDELCSZES-UHFFFAOYSA-N diphenylmethane Chemical compound C=1C=CC=CC=1CC1=CC=CC=C1 CZZYITDELCSZES-UHFFFAOYSA-N 0.000 claims 1
- 239000000975 dye Substances 0.000 claims 1
- 150000004820 halides Chemical class 0.000 claims 1
- 229910052736 halogen Inorganic materials 0.000 claims 1
- 150000002367 halogens Chemical class 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- FYAQQULBLMNGAH-UHFFFAOYSA-N hexane-1-sulfonic acid Chemical compound CCCCCCS(O)(=O)=O FYAQQULBLMNGAH-UHFFFAOYSA-N 0.000 claims 1
- 229930195733 hydrocarbon Natural products 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 229910052740 iodine Inorganic materials 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- QDLAGTHXVHQKRE-UHFFFAOYSA-N lichenxanthone Natural products COC1=CC(O)=C2C(=O)C3=C(C)C=C(OC)C=C3OC2=C1 QDLAGTHXVHQKRE-UHFFFAOYSA-N 0.000 claims 1
- 125000005647 linker group Chemical group 0.000 claims 1
- DZVCFNFOPIZQKX-LTHRDKTGSA-M merocyanine Chemical compound [Na+].O=C1N(CCCC)C(=O)N(CCCC)C(=O)C1=C\C=C\C=C/1N(CCCS([O-])(=O)=O)C2=CC=CC=C2O\1 DZVCFNFOPIZQKX-LTHRDKTGSA-M 0.000 claims 1
- 125000001434 methanylylidene group Chemical group [H]C#[*] 0.000 claims 1
- 229920003986 novolac Polymers 0.000 claims 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-O phosphonium Chemical compound [PH4+] XYFCBTPGUUZFHI-UHFFFAOYSA-O 0.000 claims 1
- 229920000412 polyarylene Polymers 0.000 claims 1
- 229920006267 polyester film Polymers 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- 229910052711 selenium Inorganic materials 0.000 claims 1
- 239000011669 selenium Substances 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 229910052708 sodium Inorganic materials 0.000 claims 1
- 239000011734 sodium Substances 0.000 claims 1
- 125000000547 substituted alkyl group Chemical group 0.000 claims 1
- RWSOTUBLDIXVET-UHFFFAOYSA-O sulfonium Chemical compound [SH3+] RWSOTUBLDIXVET-UHFFFAOYSA-O 0.000 claims 1
- 125000005537 sulfoxonium group Chemical group 0.000 claims 1
- 229910052717 sulfur Inorganic materials 0.000 claims 1
- 229910052714 tellurium Inorganic materials 0.000 claims 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical group CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 claims 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41C—PROCESSES FOR THE MANUFACTURE OR REPRODUCTION OF PRINTING SURFACES
- B41C1/00—Forme preparation
- B41C1/10—Forme preparation for lithographic printing; Master sheets for transferring a lithographic image to the forme
- B41C1/1008—Forme preparation for lithographic printing; Master sheets for transferring a lithographic image to the forme by removal or destruction of lithographic material on the lithographic support, e.g. by laser or spark ablation; by the use of materials rendered soluble or insoluble by heat exposure, e.g. by heat produced from a light to heat transforming system; by on-the-press exposure or on-the-press development, e.g. by the fountain of photolithographic materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41C—PROCESSES FOR THE MANUFACTURE OR REPRODUCTION OF PRINTING SURFACES
- B41C2210/00—Preparation or type or constituents of the imaging layers, in relation to lithographic printing forme preparation
- B41C2210/02—Positive working, i.e. the exposed (imaged) areas are removed
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41C—PROCESSES FOR THE MANUFACTURE OR REPRODUCTION OF PRINTING SURFACES
- B41C2210/00—Preparation or type or constituents of the imaging layers, in relation to lithographic printing forme preparation
- B41C2210/04—Negative working, i.e. the non-exposed (non-imaged) areas are removed
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41C—PROCESSES FOR THE MANUFACTURE OR REPRODUCTION OF PRINTING SURFACES
- B41C2210/00—Preparation or type or constituents of the imaging layers, in relation to lithographic printing forme preparation
- B41C2210/06—Developable by an alkaline solution
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41C—PROCESSES FOR THE MANUFACTURE OR REPRODUCTION OF PRINTING SURFACES
- B41C2210/00—Preparation or type or constituents of the imaging layers, in relation to lithographic printing forme preparation
- B41C2210/22—Preparation or type or constituents of the imaging layers, in relation to lithographic printing forme preparation characterised by organic non-macromolecular additives, e.g. dyes, UV-absorbers, plasticisers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41C—PROCESSES FOR THE MANUFACTURE OR REPRODUCTION OF PRINTING SURFACES
- B41C2210/00—Preparation or type or constituents of the imaging layers, in relation to lithographic printing forme preparation
- B41C2210/26—Preparation or type or constituents of the imaging layers, in relation to lithographic printing forme preparation characterised by a macromolecular compound or binder obtained by reactions not involving carbon-to-carbon unsaturated bonds
- B41C2210/262—Phenolic condensation polymers, e.g. novolacs, resols
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Thermal Sciences (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Printing Plates And Materials Therefor (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 조성물에 있어서 비노출 영역과 노출 영역간의 용해도 차이를 나타낸 그라프.
Claims (17)
- 알칼리-용해성 페놀계수지 및 방-사선 오늄염으로 이루어져 있으며, 광 용해성임을 특징으로 한 -감방사선 조성.
- 제1항에 있어서, 오늄염이 요오드늄, 술포늄, 포스포늄, 브로모늄, 클로로늄, 옥시술폭소늄, 옥시술포늄, 술폭소늄, 셀레노늄, 텔루로늄 밑 아르소늄염 중에서 선택된 조성물.
- 제1항 또는 2항에 있어서, 페놀계 수지가 노볼락수지이며 오늄염이 페놀계 수지와 오늄염 총 중량의 1내지 40중량%인 조성물.
- 제1항 또는 2항에 있어서, 페놀계 수지가 레롤 수지이며 오늄염이 페놀계 수지와 오늄염 총 중량의 5내지 40중량%인 조성물.
- 제1항 내지 4항중의 어느 하나에 있어서, 오늄염이 다음 일반식(I)-(V) 및 중합체(VI)로 표시되는 것중의 하나인 조성물.위의 식에서, R1,R2및 R3는 임의로 치환된 방향록 그룹이며, (단, 일반식 (Ⅲ), (IV) 및 (V)에서 이들 각각은 임의로 치환된 지방록 그룹일 수 있다.) : Q는 탄소-결합이거나 O,S, 〉S=O, 〉C=O, O또는N-R6중에서 선택된 연결 그룹이며, R4및 R5는, 독립적으로, H,C1-C4알킬그룹, 및 C2-C4알케닐 그룹중에서 선택되며; R6는 C6-C20아릴그룹이거나 C2-C20아실그룹이며; |는 음이온 이며 : Ar1및 Ar2는, 독립적으로, 임의로 치환된 방향록 그룹을 나타내고 또한 서로 임의로 연결되어 고리구조 내에 요오드 원자를 포함시키는 방향록 그룹을 나타낸다.
- 제5항에 있어서, 음이온의 할라이드,(여기서 R8은 임의로 치환된 알킬 또는 페닐그룹임), 및 할로겐-함유 착물이온 중에서 선택된 조성물.
- 제1항 내지 6항중의 어느 하나에 있어서, 페놀계 수지, 오늄염 및 스펙트럼 감광제 총 중량의 최고 10중량%에 달하는 스펙트럼 감광제로 추가로 이루어진 조성물.
- 제7항에 있어서, 스펙트럼 감광제가 디페닐메탄, 크사텐, 아크리딘, 메틴 및 폴리메틴(옥소놀, 시아닌 및 메로시아닌을 포함) 염료, 티아롤, 티아진, 아진, 아미노케톤, 프로피린, 착색된 방향록 다환 탄화수소, 파라-치환된 아미노스티릴 화합물 아미노트리아질 메탄, 폴리아릴렌, 폴리아릴폴리엔, 2,5-디페닐이소벤조푸란, 2,5-디아릴사이클로펜타디엔, 다아릴푸란, 디아릴티오푸란, 디아릴피롤, 폴리아릴페닐렌, 코우마린 및 폴리아릴-2-피라졸린 중에서 선택된 조성물.
- 제7항 또는 8항에 있어서, 스펙트럼 감광제가 다음 일반식 (Ⅶ) 또는 (Ⅷ)로 표시되는 조성물.위의 식에서, R7은 C1-C6알킬그룹을 나타내며 : Y는 4-퍼플루오로에틸사이클로 헥실술포네이트 또는를 나타내고, P는 1 또는 2의 수이다.
- 제1항 또는 9항중의 어느 하나에 있어서, 페놀계수지, 오늄염 및 아민 총 중량의 최고 25중량 %에 달하는 아민으로 추가로 이루어진 조성물.
- 제10항에 있어서, 아민/오늄염의 몰비가 대략 1 : 1인 조성물.
- 제10항 또는 11항에 있어서, 아민이 트리 -n-부틸아민 또는 비스 (4-디메틸아미노페닐) 메탄인 조성물
- 기판상에 피복된 제1항 내지 12항중의 어느 하나의 조성물 층으로 이루어진 감-방사선 엘레엔트.
- 제13항에 있어서, 기판이 종이, 알루미늄, 구리, 구리-에폭시 적층판, 폴리에스테르 필름 또는 실리카인 엘레엔트.
- 제13항 또는 14항에 따른 엘레엔트를 화학 방사선에 영상방향 노출 시키고, 인쇄판을 알칼리계 현상액으로 현상시켜 조성물을 조사영역에서 제거해 상기 영상을 형성시키는 석판 영상의 형성 방법.
- 제13항 또는 14항에 따른 엘레엔트를 화학 방사선에 영상방향 노출시키고; 엘레엔트를 가열해 조사 영역내의 피복물을 알칼리에 불용성인 형태로 전환시키고; 추가로 모든 엘레엔트를 화학방사선에 노출시켜 사전에 노출되지 않은 영역을 알칼리-용해성으로 만들고; 엘레엔트를 알칼리계 현상액으로 현상시켜 알칼리 용해성인 엘레엔트의 영역에서 피복물을 제거해 영상을 형성시키는 석판 영상의 형성방법.
- 제15항 또는 16항에 있어서, 현상액이 수성 나트륨 메타실리게이트인 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB838333901A GB8333901D0 (en) | 1983-12-20 | 1983-12-20 | Radiationsensitive compositions |
| GB33901 | 1983-12-20 | ||
| GB8333901 | 1983-12-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR850004660A true KR850004660A (ko) | 1985-07-25 |
| KR910008778B1 KR910008778B1 (ko) | 1991-10-21 |
Family
ID=10553566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019840008116A KR910008778B1 (ko) | 1983-12-20 | 1984-12-19 | 감방사선 조성물 |
Country Status (11)
| Country | Link |
|---|---|
| EP (1) | EP0146411B1 (ko) |
| JP (1) | JP2577718B2 (ko) |
| KR (1) | KR910008778B1 (ko) |
| AR (1) | AR244895A1 (ko) |
| AU (1) | AU583485B2 (ko) |
| BR (1) | BR8406563A (ko) |
| CA (1) | CA1262793A (ko) |
| DE (1) | DE3484868D1 (ko) |
| ES (1) | ES8705302A1 (ko) |
| GB (1) | GB8333901D0 (ko) |
| ZA (1) | ZA849517B (ko) |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3541534A1 (de) * | 1985-11-25 | 1987-05-27 | Hoechst Ag | Positiv arbeitendes strahlungsempfindliches gemisch |
| JPS62160441A (ja) * | 1986-01-09 | 1987-07-16 | Hitachi Chem Co Ltd | ホトレジスト用感光性組成物 |
| US5362607A (en) * | 1986-06-13 | 1994-11-08 | Microsi, Inc. | Method for making a patterned resist substrate composite |
| US5310619A (en) * | 1986-06-13 | 1994-05-10 | Microsi, Inc. | Resist compositions comprising a phenolic resin, an acid forming onium salt and a tert-butyl ester or tert-butyl carbonate which is acid-cleavable |
| EP0249139B2 (en) * | 1986-06-13 | 1998-03-11 | MicroSi, Inc. (a Delaware corporation) | Resist compositions and use |
| MY103006A (en) * | 1987-03-30 | 1993-03-31 | Microsi Inc | Photoresist compositions |
| DE3721741A1 (de) * | 1987-07-01 | 1989-01-12 | Basf Ag | Strahlungsempfindliches gemisch fuer lichtempfindliche beschichtungsmaterialien |
| US4873176A (en) * | 1987-08-28 | 1989-10-10 | Shipley Company Inc. | Reticulation resistant photoresist coating |
| DE3817010A1 (de) * | 1988-05-19 | 1989-11-30 | Basf Ag | Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefmustern |
| DE3817009A1 (de) * | 1988-05-19 | 1989-11-30 | Basf Ag | Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefmustern |
| DE3817012A1 (de) * | 1988-05-19 | 1989-11-30 | Basf Ag | Positiv und negativ arbeitende strahlungsempfindliche gemische sowie verfahren zur herstellung von reliefmustern |
| JPH02101462A (ja) * | 1988-10-11 | 1990-04-13 | Matsushita Electric Ind Co Ltd | パターン形成材料 |
| DE3914407A1 (de) * | 1989-04-29 | 1990-10-31 | Basf Ag | Strahlungsempfindliche polymere und positiv arbeitendes aufzeichnungsmaterial |
| GB8923459D0 (en) * | 1989-10-18 | 1989-12-06 | Minnesota Mining & Mfg | Positive-acting photoresist compositions |
| GB9105750D0 (en) * | 1991-03-19 | 1991-05-01 | Minnesota Mining & Mfg | Speed stabilised positive-acting photoresist compositions |
| JP3010607B2 (ja) * | 1992-02-25 | 2000-02-21 | ジェイエスアール株式会社 | 感放射線性樹脂組成物 |
| DE4222968A1 (de) * | 1992-07-13 | 1994-01-20 | Hoechst Ag | Positiv-arbeitendes strahlungsempfindliches Gemisch und damit hergestelltes Aufzeichnungsmaterial |
| US5372915A (en) * | 1993-05-19 | 1994-12-13 | Eastman Kodak Company | Method of making a lithographic printing plate containing a resole resin and a novolac resin in the radiation sensitive layer |
| EP0672954B1 (en) * | 1994-03-14 | 1999-09-15 | Kodak Polychrome Graphics LLC | Radiation-sensitive composition containing a resole resin, a novolac resin, an infrared absorber and a triazine and use thereof in lithographic printing plates |
| US5814431A (en) * | 1996-01-10 | 1998-09-29 | Mitsubishi Chemical Corporation | Photosensitive composition and lithographic printing plate |
| JP3645362B2 (ja) * | 1996-07-22 | 2005-05-11 | 富士写真フイルム株式会社 | ネガ型画像記録材料 |
| JP3814961B2 (ja) | 1996-08-06 | 2006-08-30 | 三菱化学株式会社 | ポジ型感光性印刷版 |
| US6432610B1 (en) * | 1998-09-08 | 2002-08-13 | Regents Of The University Of California | Dye precursor molecules chemically reactive with the light-altered form of light-sensitive molecules to form stable fluorescent dye, particularly for optical memories including two-photon three-dimensional optical memories |
| JP3024128B2 (ja) * | 1998-11-27 | 2000-03-21 | ジェイエスアール株式会社 | ポジ型感放射線性樹脂組成物 |
| JP3996305B2 (ja) | 1999-02-15 | 2007-10-24 | 富士フイルム株式会社 | ポジ型平版印刷用材料 |
| US6824879B2 (en) | 1999-06-10 | 2004-11-30 | Honeywell International Inc. | Spin-on-glass anti-reflective coatings for photolithography |
| US6368400B1 (en) | 2000-07-17 | 2002-04-09 | Honeywell International | Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography |
| JP3909818B2 (ja) * | 2001-11-12 | 2007-04-25 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
| KR20040075866A (ko) | 2001-11-15 | 2004-08-30 | 허니웰 인터내셔날 인코포레이티드 | 포토리소그래피용 스핀-온 무반사 코팅 |
| JP4163964B2 (ja) | 2003-01-07 | 2008-10-08 | 岡本化学工業株式会社 | 画像形成組成物およびそれを用いた感光性平版印刷版 |
| JP2005099348A (ja) | 2003-09-24 | 2005-04-14 | Fuji Photo Film Co Ltd | 平版印刷版原版 |
| US8053159B2 (en) | 2003-11-18 | 2011-11-08 | Honeywell International Inc. | Antireflective coatings for via fill and photolithography applications and methods of preparation thereof |
| JP4825130B2 (ja) * | 2004-07-22 | 2011-11-30 | 関西ペイント株式会社 | 近赤外線活性型ポジ型樹脂組成物 |
| US8642246B2 (en) | 2007-02-26 | 2014-02-04 | Honeywell International Inc. | Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof |
| US8557877B2 (en) | 2009-06-10 | 2013-10-15 | Honeywell International Inc. | Anti-reflective coatings for optically transparent substrates |
| JP5763433B2 (ja) * | 2010-06-29 | 2015-08-12 | 住友化学株式会社 | 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法 |
| US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
| KR101413074B1 (ko) * | 2011-12-26 | 2014-06-30 | 제일모직 주식회사 | 컬러필터용 감광성 수지 조성물 및 이를 이용한 컬러필터 |
| WO2016167892A1 (en) | 2015-04-13 | 2016-10-20 | Honeywell International Inc. | Polysiloxane formulations and coatings for optoelectronic applications |
| CN109851539A (zh) * | 2017-11-30 | 2019-06-07 | 罗门哈斯电子材料有限责任公司 | 盐和包含其的光致抗蚀剂 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3567453A (en) * | 1967-12-26 | 1971-03-02 | Eastman Kodak Co | Light sensitive compositions for photoresists and lithography |
| US3793033A (en) * | 1972-09-05 | 1974-02-19 | Minnesota Mining & Mfg | Development-free printing plate |
| US4069054A (en) * | 1975-09-02 | 1978-01-17 | Minnesota Mining And Manufacturing Company | Photopolymerizable composition containing a sensitized aromatic sulfonium compound and a cationacally polymerizable monomer |
| DE2718254C3 (de) * | 1977-04-25 | 1980-04-10 | Hoechst Ag, 6000 Frankfurt | Strahlungsempfindliche Kopiermasse |
| JPS56501064A (ko) * | 1979-08-17 | 1981-07-30 | ||
| DE3107109A1 (de) * | 1981-02-26 | 1982-09-09 | Hoechst Ag, 6000 Frankfurt | Lichtempfindliches gemisch und daraus hergestelltes kopiermaterial |
| US4500629A (en) * | 1982-04-08 | 1985-02-19 | Ciba-Geigy Corporation | Method of forming images from liquid masses |
| JPS6071657A (ja) * | 1983-09-27 | 1985-04-23 | Agency Of Ind Science & Technol | 感光性樹脂組成物 |
-
1983
- 1983-12-20 GB GB838333901A patent/GB8333901D0/en active Pending
-
1984
- 1984-12-05 ZA ZA849517A patent/ZA849517B/xx unknown
- 1984-12-11 AU AU36481/84A patent/AU583485B2/en not_active Ceased
- 1984-12-12 ES ES538520A patent/ES8705302A1/es not_active Expired
- 1984-12-17 CA CA000470287A patent/CA1262793A/en not_active Expired
- 1984-12-19 KR KR1019840008116A patent/KR910008778B1/ko not_active IP Right Cessation
- 1984-12-19 EP EP84308904A patent/EP0146411B1/en not_active Expired - Lifetime
- 1984-12-19 JP JP59268201A patent/JP2577718B2/ja not_active Expired - Lifetime
- 1984-12-19 DE DE8484308904T patent/DE3484868D1/de not_active Expired - Fee Related
- 1984-12-19 BR BR8406563A patent/BR8406563A/pt not_active IP Right Cessation
- 1984-12-19 AR AR84299027A patent/AR244895A1/es active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2577718B2 (ja) | 1997-02-05 |
| AU583485B2 (en) | 1989-05-04 |
| KR910008778B1 (ko) | 1991-10-21 |
| GB8333901D0 (en) | 1984-02-01 |
| EP0146411A3 (en) | 1987-02-04 |
| ES8705302A1 (es) | 1987-05-01 |
| JPS60175046A (ja) | 1985-09-09 |
| EP0146411A2 (en) | 1985-06-26 |
| AU3648184A (en) | 1985-06-27 |
| EP0146411B1 (en) | 1991-07-31 |
| AR244895A1 (es) | 1993-11-30 |
| ZA849517B (en) | 1986-07-30 |
| ES538520A0 (es) | 1987-05-01 |
| DE3484868D1 (de) | 1991-09-05 |
| BR8406563A (pt) | 1985-10-15 |
| CA1262793A (en) | 1989-11-07 |
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| A201 | Request for examination | ||
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| FPAY | Annual fee payment |
Payment date: 19961004 Year of fee payment: 6 |
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