KR850003476A - 광전 장치 및 그 제조방법 - Google Patents
광전 장치 및 그 제조방법 Download PDFInfo
- Publication number
- KR850003476A KR850003476A KR1019830004960A KR830004960A KR850003476A KR 850003476 A KR850003476 A KR 850003476A KR 1019830004960 A KR1019830004960 A KR 1019830004960A KR 830004960 A KR830004960 A KR 830004960A KR 850003476 A KR850003476 A KR 850003476A
- Authority
- KR
- South Korea
- Prior art keywords
- circuit current
- current line
- bias
- short
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/68—Organic materials, e.g. photoresists
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/17—Photovoltaic cells having only PIN junction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
- H10F71/107—Continuous treatment of the devices, e.g. roll-to roll processes or multi-chamber deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/520,054 US4464823A (en) | 1982-10-21 | 1983-08-03 | Method for eliminating short and latent short circuit current paths in photovoltaic devices |
| US520054 | 1983-08-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR850003476A true KR850003476A (ko) | 1985-06-17 |
Family
ID=24071012
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019830004960A Withdrawn KR850003476A (ko) | 1983-08-03 | 1983-10-20 | 광전 장치 및 그 제조방법 |
Country Status (8)
| Country | Link |
|---|---|
| EP (1) | EP0134364A3 (https=) |
| JP (1) | JPS6046080A (https=) |
| KR (1) | KR850003476A (https=) |
| AU (1) | AU2042183A (https=) |
| BR (1) | BR8305792A (https=) |
| ES (1) | ES8503889A1 (https=) |
| IN (1) | IN160221B (https=) |
| MX (1) | MX159519A (https=) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU594359B2 (en) * | 1985-08-24 | 1990-03-08 | Semiconductor Energy Laboratory Co. Ltd. | Semiconductor device free from the current leakage through a semiconductor layer and method for manufacturing same |
| US6228662B1 (en) | 1999-03-24 | 2001-05-08 | Kaneka Corporation | Method for removing short-circuited sections of a solar cell |
| ATE240589T1 (de) * | 1999-03-25 | 2003-05-15 | Kaneka Corp | Verfahren zum herstellen von dünnschicht- solarzellen-modulen |
| JP4627575B2 (ja) * | 1999-08-12 | 2011-02-09 | 株式会社カネカ | 太陽電池の短絡部除去方法 |
| AU766466B2 (en) * | 1999-05-14 | 2003-10-16 | Kaneka Corporation | Reverse biasing apparatus for solar battery module |
| JP2007189199A (ja) | 2005-12-12 | 2007-07-26 | Tdk Corp | キャパシタおよびその製造方法 |
| CN101809761B (zh) | 2008-09-09 | 2011-12-28 | 三洋电机株式会社 | 太阳能电池组件的制造方法 |
| WO2013072988A1 (ja) | 2011-11-14 | 2013-05-23 | 株式会社日本マイクロニクス | シート状電池のリペア装置 |
| DE102018001057B4 (de) * | 2018-02-07 | 2025-12-04 | Ce Cell Engineering Gmbh | Verfahren zur Verbesserung des ohmschen Kontaktverhaltens zwischen einem Kontaktgitter und einer Emitterschicht einer Siliziumsolarzelle |
| CN108233329B (zh) * | 2018-03-16 | 2024-05-31 | 西安赛诺克新能源科技有限公司 | 一种提高主电路断开响应速度的保护电路 |
| CN117353651B (zh) * | 2023-10-16 | 2024-04-16 | 中科宏一教育科技集团有限公司 | 光伏系统控制方法、装置、设备和介质 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4197141A (en) * | 1978-01-31 | 1980-04-08 | Massachusetts Institute Of Technology | Method for passivating imperfections in semiconductor materials |
| US4166918A (en) * | 1978-07-19 | 1979-09-04 | Rca Corporation | Method of removing the effects of electrical shorts and shunts created during the fabrication process of a solar cell |
| JPS5683981A (en) * | 1979-12-13 | 1981-07-08 | Matsushita Electric Ind Co Ltd | Semiconductor device and manufacture |
| US4385971A (en) * | 1981-06-26 | 1983-05-31 | Rca Corporation | Electrolytic etch for eliminating shorts and shunts in large area amorphous silicon solar cells |
-
1983
- 1983-10-19 AU AU20421/83A patent/AU2042183A/en not_active Abandoned
- 1983-10-20 ES ES526597A patent/ES8503889A1/es not_active Expired
- 1983-10-20 KR KR1019830004960A patent/KR850003476A/ko not_active Withdrawn
- 1983-10-20 JP JP58196928A patent/JPS6046080A/ja active Granted
- 1983-10-20 MX MX199163A patent/MX159519A/es unknown
- 1983-10-20 BR BR8305792A patent/BR8305792A/pt unknown
- 1983-10-21 EP EP83306405A patent/EP0134364A3/en not_active Withdrawn
- 1983-10-29 IN IN722/DEL/83A patent/IN160221B/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| ES526597A0 (es) | 1985-03-01 |
| EP0134364A3 (en) | 1986-06-04 |
| JPS6046080A (ja) | 1985-03-12 |
| ES8503889A1 (es) | 1985-03-01 |
| AU2042183A (en) | 1985-02-07 |
| BR8305792A (pt) | 1985-05-21 |
| IN160221B (https=) | 1987-07-04 |
| EP0134364A2 (en) | 1985-03-20 |
| JPH0572756B2 (https=) | 1993-10-12 |
| MX159519A (es) | 1989-06-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
St.27 status event code: A-0-1-A10-A12-nap-PA0109 |
|
| R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| PC1203 | Withdrawal of no request for examination |
St.27 status event code: N-1-6-B10-B12-nap-PC1203 |
|
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid | ||
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-3-3-R10-R18-oth-X000 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-2-2-P10-P22-nap-X000 |