KR840006101A - 수광소자 - Google Patents

수광소자 Download PDF

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Publication number
KR840006101A
KR840006101A KR1019830003896A KR830003896A KR840006101A KR 840006101 A KR840006101 A KR 840006101A KR 1019830003896 A KR1019830003896 A KR 1019830003896A KR 830003896 A KR830003896 A KR 830003896A KR 840006101 A KR840006101 A KR 840006101A
Authority
KR
South Korea
Prior art keywords
conductive film
light
layer
receiving element
light receiving
Prior art date
Application number
KR1019830003896A
Other languages
English (en)
Other versions
KR880000140B1 (ko
Inventor
사찌오 이시오까 (외 7)
Original Assignee
미따 가쯔시게
가부시기 가이샤 히다찌 세이사구쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미따 가쯔시게, 가부시기 가이샤 히다찌 세이사구쇼 filed Critical 미따 가쯔시게
Publication of KR840006101A publication Critical patent/KR840006101A/ko
Application granted granted Critical
Publication of KR880000140B1 publication Critical patent/KR880000140B1/ko

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23D—PLANING; SLOTTING; SHEARING; BROACHING; SAWING; FILING; SCRAPING; LIKE OPERATIONS FOR WORKING METAL BY REMOVING MATERIAL, NOT OTHERWISE PROVIDED FOR
    • B23D65/00—Making tools for sawing machines or sawing devices for use in cutting any kind of material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/456—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions exhibiting no discontinuities, e.g. consisting of uniform layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)

Abstract

내용 없음

Description

수광소자
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 광도전형 촬상관의 단면 개략도.
제5도는 본 발명 실시예의 광도 전막중의 붕소함유량분포를 나타내는 도표.

Claims (8)

  1. 투광성 도전막으로 된 투명전극과 광도전체층을 구비하고, 상기 투광성 도전막이 빛의 입사측에 배치된 수광소자에 있어서, 상기 광도전체층이, 수소를 적어도 5원자%~30원자%를 함유하고, 다시 제3족원자, 제2족원자 중에서 선택된 적어도 하나를 투광성 도전막의 반대측에서 농도가 높아지도록 첨가된 비결정질 실리콘으로 되어 있고, 또한 상기 광도 전체층에 투명전극측이 정, 반대측이 - 가되는 방향에 전압이 인가되는것을 특징으로 하는 수광소자.
  2. 제1항에 있어서, 상기 과도전체층중의 미량첨가원자의 함유량분포가 투광성 도전막 계면에서 5ppm이하이고, 또한 적어도 막두께의 중앙부에서 투광성 도전막과 반대측의 계면까지 100ppm이하 1ppm이상인 것을 특징으로 하는 수광소자.
  3. 제2항에 있어서, 상기 광도전체층중의 미량첨가불순물의 함유량이 투광성 도전막계면에서 거리 0.5㎛ 까지의 영역에서 10ppm이하인 것을 특징으로 하는 수광소자.
  4. 제1항에 있어서, 상기 광도전체층중의 미량첨가원자의 함유량이, 정공전류밀도 jp 와 전류전류밀도je가 같게 되는 투명 전극으로부터의 광도전체층중의 거리 Xc까지는 10ppm이하이고, Xc에서 떨어진 영역에서는 1ppm이상 100ppm이하인 것을 특징으로 하는 수광소자.
  5. 상기 각항의 하나에 있어서, 상기 광도전체층과 투광성 도전막과의 사이에, n형 반도 체박층 또는 투광성 유전체박층중의 적어도 하나를 삽입하는 것을 특징으로 하는 수광소자.
  6. 상기 각항의 하나에 있어서, 상기 광도전체층의 상기 투광성 도전막과는 반대측의 단부면에 비임·랜딩층을 가지고, 상기 투광성 도전막에 입사하는 빛의 강도분포를 비임주사에 의해서 검지하는 것을 특징으로 하는 수광소자.
  7. 제1항에 있어서, 상기 제2족원자는 Zn, Cd이고, 상기 제3족원자는 B, Al, Ga, In인 수광소자.
  8. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019830003896A 1982-08-23 1983-08-20 수광소자 KR880000140B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP57-144647 1982-08-23
JP144647 1982-08-23
JP57144647A JPS5934675A (ja) 1982-08-23 1982-08-23 受光素子

Publications (2)

Publication Number Publication Date
KR840006101A true KR840006101A (ko) 1984-11-21
KR880000140B1 KR880000140B1 (ko) 1988-03-12

Family

ID=15366932

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019830003896A KR880000140B1 (ko) 1982-08-23 1983-08-20 수광소자

Country Status (4)

Country Link
US (1) US4626885A (ko)
JP (1) JPS5934675A (ko)
KR (1) KR880000140B1 (ko)
FR (1) FR2532117A1 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61222277A (ja) * 1985-03-28 1986-10-02 Sanyo Electric Co Ltd 光起電力装置及びその製造方法
US5304815A (en) * 1986-09-11 1994-04-19 Canon Kabushiki Kaisha Electron emission elements
US4851367A (en) * 1988-08-17 1989-07-25 Eastman Kodak Company Method of making primary current detector using plasma enhanced chemical vapor deposition
BE1008070A3 (nl) * 1994-02-09 1996-01-09 Philips Electronics Nv Beeldversterkerbuis.

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4086102A (en) * 1976-12-13 1978-04-25 King William J Inexpensive solar cell and method therefor
US4265991A (en) * 1977-12-22 1981-05-05 Canon Kabushiki Kaisha Electrophotographic photosensitive member and process for production thereof
JPS54150995A (en) * 1978-05-19 1979-11-27 Hitachi Ltd Photo detector
NL7805417A (nl) * 1978-05-19 1979-11-21 Philips Nv Opneembuis.
FR2441264A1 (fr) * 1978-11-08 1980-06-06 Hitachi Ltd Ecran sensible aux radiations
NL7902838A (nl) * 1979-04-11 1980-10-14 Philips Nv Opneembuis.
JPS5832454B2 (ja) * 1979-06-07 1983-07-13 日本放送協会 光導電性タ−ゲツト
JPS56146142A (en) * 1980-04-16 1981-11-13 Hitachi Ltd Electrophotographic sensitive film
JPS56152280A (en) * 1980-04-25 1981-11-25 Hitachi Ltd Light receiving surface
GB2095030B (en) * 1981-01-08 1985-06-12 Canon Kk Photoconductive member
US4536459A (en) * 1982-03-12 1985-08-20 Canon Kabushiki Kaisha Photoconductive member having multiple amorphous layers
US4517269A (en) * 1982-04-27 1985-05-14 Canon Kabushiki Kaisha Photoconductive member
JPS58194231A (ja) * 1982-05-10 1983-11-12 Hitachi Ltd 撮像管
JPS5996639A (ja) * 1982-11-26 1984-06-04 Hitachi Ltd 撮像管

Also Published As

Publication number Publication date
US4626885A (en) 1986-12-02
FR2532117A1 (fr) 1984-02-24
FR2532117B1 (ko) 1985-04-12
KR880000140B1 (ko) 1988-03-12
JPS5934675A (ja) 1984-02-25

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