KR840006101A - 수광소자 - Google Patents
수광소자 Download PDFInfo
- Publication number
- KR840006101A KR840006101A KR1019830003896A KR830003896A KR840006101A KR 840006101 A KR840006101 A KR 840006101A KR 1019830003896 A KR1019830003896 A KR 1019830003896A KR 830003896 A KR830003896 A KR 830003896A KR 840006101 A KR840006101 A KR 840006101A
- Authority
- KR
- South Korea
- Prior art keywords
- conductive film
- light
- layer
- receiving element
- light receiving
- Prior art date
Links
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 239000010408 film Substances 0.000 claims 10
- 239000000654 additive Substances 0.000 claims 3
- 230000000996 additive effect Effects 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 1
- 229910052793 cadmium Inorganic materials 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23D—PLANING; SLOTTING; SHEARING; BROACHING; SAWING; FILING; SCRAPING; LIKE OPERATIONS FOR WORKING METAL BY REMOVING MATERIAL, NOT OTHERWISE PROVIDED FOR
- B23D65/00—Making tools for sawing machines or sawing devices for use in cutting any kind of material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
- H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
- H01J29/456—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions exhibiting no discontinuities, e.g. consisting of uniform layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
- H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Light Receiving Elements (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 광도전형 촬상관의 단면 개략도.
제5도는 본 발명 실시예의 광도 전막중의 붕소함유량분포를 나타내는 도표.
Claims (8)
- 투광성 도전막으로 된 투명전극과 광도전체층을 구비하고, 상기 투광성 도전막이 빛의 입사측에 배치된 수광소자에 있어서, 상기 광도전체층이, 수소를 적어도 5원자%~30원자%를 함유하고, 다시 제3족원자, 제2족원자 중에서 선택된 적어도 하나를 투광성 도전막의 반대측에서 농도가 높아지도록 첨가된 비결정질 실리콘으로 되어 있고, 또한 상기 광도 전체층에 투명전극측이 정, 반대측이 - 가되는 방향에 전압이 인가되는것을 특징으로 하는 수광소자.
- 제1항에 있어서, 상기 과도전체층중의 미량첨가원자의 함유량분포가 투광성 도전막 계면에서 5ppm이하이고, 또한 적어도 막두께의 중앙부에서 투광성 도전막과 반대측의 계면까지 100ppm이하 1ppm이상인 것을 특징으로 하는 수광소자.
- 제2항에 있어서, 상기 광도전체층중의 미량첨가불순물의 함유량이 투광성 도전막계면에서 거리 0.5㎛ 까지의 영역에서 10ppm이하인 것을 특징으로 하는 수광소자.
- 제1항에 있어서, 상기 광도전체층중의 미량첨가원자의 함유량이, 정공전류밀도 jp 와 전류전류밀도je가 같게 되는 투명 전극으로부터의 광도전체층중의 거리 Xc까지는 10ppm이하이고, Xc에서 떨어진 영역에서는 1ppm이상 100ppm이하인 것을 특징으로 하는 수광소자.
- 상기 각항의 하나에 있어서, 상기 광도전체층과 투광성 도전막과의 사이에, n형 반도 체박층 또는 투광성 유전체박층중의 적어도 하나를 삽입하는 것을 특징으로 하는 수광소자.
- 상기 각항의 하나에 있어서, 상기 광도전체층의 상기 투광성 도전막과는 반대측의 단부면에 비임·랜딩층을 가지고, 상기 투광성 도전막에 입사하는 빛의 강도분포를 비임주사에 의해서 검지하는 것을 특징으로 하는 수광소자.
- 제1항에 있어서, 상기 제2족원자는 Zn, Cd이고, 상기 제3족원자는 B, Al, Ga, In인 수광소자.
- ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP144647 | 1982-08-23 | ||
JP57144647A JPS5934675A (ja) | 1982-08-23 | 1982-08-23 | 受光素子 |
JP57-144647 | 1982-08-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR840006101A true KR840006101A (ko) | 1984-11-21 |
KR880000140B1 KR880000140B1 (ko) | 1988-03-12 |
Family
ID=15366932
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019830003896A KR880000140B1 (ko) | 1982-08-23 | 1983-08-20 | 수광소자 |
Country Status (4)
Country | Link |
---|---|
US (1) | US4626885A (ko) |
JP (1) | JPS5934675A (ko) |
KR (1) | KR880000140B1 (ko) |
FR (1) | FR2532117A1 (ko) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61222277A (ja) * | 1985-03-28 | 1986-10-02 | Sanyo Electric Co Ltd | 光起電力装置及びその製造方法 |
US5304815A (en) * | 1986-09-11 | 1994-04-19 | Canon Kabushiki Kaisha | Electron emission elements |
US4851367A (en) * | 1988-08-17 | 1989-07-25 | Eastman Kodak Company | Method of making primary current detector using plasma enhanced chemical vapor deposition |
BE1008070A3 (nl) * | 1994-02-09 | 1996-01-09 | Philips Electronics Nv | Beeldversterkerbuis. |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4086102A (en) * | 1976-12-13 | 1978-04-25 | King William J | Inexpensive solar cell and method therefor |
AU530905B2 (en) * | 1977-12-22 | 1983-08-04 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member |
NL7805417A (nl) * | 1978-05-19 | 1979-11-21 | Philips Nv | Opneembuis. |
JPS54150995A (en) * | 1978-05-19 | 1979-11-27 | Hitachi Ltd | Photo detector |
FR2441264A1 (fr) * | 1978-11-08 | 1980-06-06 | Hitachi Ltd | Ecran sensible aux radiations |
NL7902838A (nl) * | 1979-04-11 | 1980-10-14 | Philips Nv | Opneembuis. |
JPS5832454B2 (ja) * | 1979-06-07 | 1983-07-13 | 日本放送協会 | 光導電性タ−ゲツト |
JPS56146142A (en) * | 1980-04-16 | 1981-11-13 | Hitachi Ltd | Electrophotographic sensitive film |
JPS56152280A (en) * | 1980-04-25 | 1981-11-25 | Hitachi Ltd | Light receiving surface |
GB2095030B (en) * | 1981-01-08 | 1985-06-12 | Canon Kk | Photoconductive member |
US4536459A (en) * | 1982-03-12 | 1985-08-20 | Canon Kabushiki Kaisha | Photoconductive member having multiple amorphous layers |
US4517269A (en) * | 1982-04-27 | 1985-05-14 | Canon Kabushiki Kaisha | Photoconductive member |
JPS58194231A (ja) * | 1982-05-10 | 1983-11-12 | Hitachi Ltd | 撮像管 |
JPS5996639A (ja) * | 1982-11-26 | 1984-06-04 | Hitachi Ltd | 撮像管 |
-
1982
- 1982-08-23 JP JP57144647A patent/JPS5934675A/ja active Pending
-
1983
- 1983-07-29 US US06/518,658 patent/US4626885A/en not_active Expired - Fee Related
- 1983-08-04 FR FR8312888A patent/FR2532117A1/fr active Granted
- 1983-08-20 KR KR1019830003896A patent/KR880000140B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR880000140B1 (ko) | 1988-03-12 |
FR2532117A1 (fr) | 1984-02-24 |
FR2532117B1 (ko) | 1985-04-12 |
US4626885A (en) | 1986-12-02 |
JPS5934675A (ja) | 1984-02-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR870005477A (ko) | 반도체 장치 | |
KR970054565A (ko) | 포토다이오드 및 그 제조 방법 | |
KR890011034A (ko) | P-형 텔루륨-함유 ii-vi 반도체 박막용 안정한 저항성 접점을 제조하는 방법 및 그 저항성 접점을 갖는 광기전 장치 | |
ATE2984T1 (de) | Solarzellen-anordnung. | |
KR890012157A (ko) | 적외선 방사 검출 장치 | |
KR920005395A (ko) | 광전장치 | |
KR910008841A (ko) | 과전압 보호 기능부 반도체 장치 및 이의 제조방법 | |
JP2023027395A (ja) | 光学モジュール及び光学式エンコーダ | |
KR840006101A (ko) | 수광소자 | |
KR840001783A (ko) | 광반도체 장치 | |
JPS5718372A (en) | Semiconductor photoreceiving element | |
KR850003476A (ko) | 광전 장치 및 그 제조방법 | |
KR20020005990A (ko) | 반도체 장치 | |
JPS5764239A (en) | Photosensitive body for electrophotography | |
KR900008704A (ko) | 반도체 장치 | |
KR840004983A (ko) | 촬 상 관 | |
KR870003582A (ko) | 수광소자 | |
JPS60160183A (ja) | 光導電型検出器の温度補償方法 | |
DE3875655D1 (de) | Halbleiter mit kapazitiver auslese der ladungstraeger und integrierter gleichspannungszufuehrung. | |
KR870700147A (ko) | 비선형 및 쌍안정 광학장치 | |
KR920015453A (ko) | 스위칭 반도체장치의 제조방법 | |
US3522389A (en) | Masked film recording electroluminescent diode light source having a transparent filled mask aperture | |
JPS6259476B2 (ko) | ||
KR100251534B1 (ko) | 측면 수광 공명 투과 소자를 이용한 다중 피크 발생 방법 | |
KR910008873A (ko) | 반도체발광소자 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20020313 Year of fee payment: 15 |
|
LAPS | Lapse due to unpaid annual fee |