KR890012157A - 적외선 방사 검출 장치 - Google Patents

적외선 방사 검출 장치 Download PDF

Info

Publication number
KR890012157A
KR890012157A KR1019880000235A KR880000235A KR890012157A KR 890012157 A KR890012157 A KR 890012157A KR 1019880000235 A KR1019880000235 A KR 1019880000235A KR 880000235 A KR880000235 A KR 880000235A KR 890012157 A KR890012157 A KR 890012157A
Authority
KR
South Korea
Prior art keywords
radiation detection
quantum well
superlattice
infrared radiation
infrared
Prior art date
Application number
KR1019880000235A
Other languages
English (en)
Other versions
KR960008181B1 (ko
Inventor
지.베티아 크라이드
키트 쵸이 퀑
프랭클리 레빈 배리
죤 마릭 로저
플레밍 워커 죤
Original Assignee
엘리 외이스
아메리칸 테리폰 앤드 텔레그라프 캄파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘리 외이스, 아메리칸 테리폰 앤드 텔레그라프 캄파니 filed Critical 엘리 외이스
Publication of KR890012157A publication Critical patent/KR890012157A/ko
Application granted granted Critical
Publication of KR960008181B1 publication Critical patent/KR960008181B1/ko

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

내용 없음.

Description

적외선 방사 검출 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 전압원 및 전류 측정 장치를 포함하는 간단한 테스트 배치로 본 발명에 따른 적외선 방사 검출기의 구조의 확장 개략도.
제2도는 회절 격자를 포함하여, 제1도에 도시된 구조와 다른 구조의 도시도.
제3도는 바이어스 필드를 가진 본 발명에 따른 장치에 대응하는 에너지 밴드 다이어그램.

Claims (11)

  1. 다수의 양자웰을 구성하는 반도체 층을 구비하는 기판-지지된 헤테로구조 초격자 및, 상기 초격자에 입사되는 방사에 응답하여 전기 신호를 감지하며 상기 초격자를 전기적으로 바이어스하는 접촉 수단을 포함하는 적외선-방사 검출기를 구비하는 장치에 있어서, 상기 장치는 상기 양자웰중의 적어도 하나는 적어도 두개의 편재된 상태를 갖는 것을 특징으로 하는 적외선-방사 검출장치.
  2. 제1항에 있어서, 상기 양자웰은 두개의 편재된 상태를 갖는것을 특징으로 하는 적외선-방사 검출장치.
  3. 제1항에 있어서, 바이어스 필드가 존재할 시에, 상기 양자웰의 적어도 일부분은 본질적으로 선형적인 에너지 순서를 구성하는 것을 특징으로 하는 적외선-방사 검출 장치.
  4. 제1항에 있어서, 바이어스 필드가 존재할 시에, 상기 양자웰의 적어도 일부분은 포물선 성분을 가지고 있는 에너지의 순서를 구성하는 것을 특징으로 하는적외선-방사 검출장치.
  5. 제1항에 있어서, 제1양자웰의 제1상태의 에너지 레벨은 제2양자웰의 제2상태의 에너지 레벨과 본질적으로 동일하며, 상기 제2양자웰은 상기 제2양자웰에 근접한 것을 특징으로 하는 적외선-방사 검출장치.
  6. 제1항에 있어서, 상기 반도체층은 합성 반도체 층인 것을 특징으로 하는 적외선-방사 검출장치.
  7. 제1항에 있어서, 전위 장벽을 가지고 있는 상기 양자웰은 암전류와 비교된 것으로서 광전류의 공진 터넬링을 촉진하도록 선택되는 것을 특징으로 하는 적외선-방사 검출장치.
  8. 제7항에 있어서, 상기 장벽은 개량된 종합적인 프로화일을 갖는 것을 특징으로 하는 적외선-방사 검출장치.
  9. 제7항에 있어서, 양자웰 쌍은 공진 터넬링이 에너지 레벨을 매치시킴으로써 광전류 전자를 위해 촉진되며, 그리고 에너지 레벨 매칭의 부족으로 인한 암전류 전자를 위해 방해되게 되는 것을 특징으로 하는 적외선-방사 검출장치.
  10. 다수의 양자웰을 구성하는 반도체 층을 구비하는 기판-지지된 헤테로 구조체 초격자에 입사되는 방사를 형성하는 단계 및, 상기 초격자를 통하여 흐르는 전류를 감지하는 단계를 구비하는 적외선 방사 검출 방법에 있어서, 상기 양자웰중의 적어도 하나는 적어도 두개의 편재된 상태를 가지고 있으며 그리고, 적어도 하나의 양자웰 양단의 전압이 상기 편재된 상태사이의 에너지 차보다 더 크게되도록 상기 초격자가 전기적으로 바이어스 되는 것을 특징으로 하는 적외선 방사 검출방법.
  11. 제10항에 있어서, 상기 전압은 상기 에너지 차와 같거나 또는 상기 에너지차의 1.25배와 대략 같은 것을 특징으로 하는 적외선 방사 검출장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880000235A 1987-01-15 1988-01-15 적외선 방사 검출 장치 및 그 방법 KR960008181B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US419187A 1987-01-15 1987-01-15
US004,191 1987-01-15
US004191 1987-01-15
US097567 1987-09-15
US097,567 1987-09-15
US07/097,567 US4894526A (en) 1987-01-15 1987-09-15 Infrared-radiation detector device

Publications (2)

Publication Number Publication Date
KR890012157A true KR890012157A (ko) 1989-08-24
KR960008181B1 KR960008181B1 (ko) 1996-06-20

Family

ID=26672731

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880000235A KR960008181B1 (ko) 1987-01-15 1988-01-15 적외선 방사 검출 장치 및 그 방법

Country Status (7)

Country Link
US (1) US4894526A (ko)
EP (1) EP0275150B1 (ko)
JP (1) JP2642114B2 (ko)
KR (1) KR960008181B1 (ko)
CA (1) CA1302546C (ko)
DE (1) DE3854333T2 (ko)
ES (1) ES2076156T3 (ko)

Families Citing this family (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6201242B1 (en) 1987-08-05 2001-03-13 Lockheed Martin Corporation Bandgap radiation detector
US5023685A (en) * 1988-06-06 1991-06-11 Bethea Clyde G Quantum-well radiation-interactive device, and methods of radiation detection and modulation
JPH02116175A (ja) * 1988-10-26 1990-04-27 Sumitomo Electric Ind Ltd 半導体受光素子
JPH02121370A (ja) * 1988-10-29 1990-05-09 Sumitomo Electric Ind Ltd 光検出器
US5185647A (en) * 1988-12-12 1993-02-09 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Long wavelength infrared detector
JPH081949B2 (ja) * 1989-05-30 1996-01-10 三菱電機株式会社 赤外線撮像装置及びその製造方法
US5036371A (en) * 1989-09-27 1991-07-30 The United States Of America As Represented By The Secretary Of The Navy Multiple quantum well device
US5079601A (en) * 1989-12-20 1992-01-07 International Business Machines Corporation Optoelectronic devices based on intraband transitions in combinations of type i and type ii tunnel junctions
US5191784A (en) * 1989-12-28 1993-03-09 Siemens Corporate Research, Inc. Opto-electronic gas sensor
US5012301A (en) * 1990-02-22 1991-04-30 Northern Telecom Limited Three terminal semiconductor device
US5013918A (en) * 1990-04-02 1991-05-07 The United States Of America As Represented By The Secretary Of The Army Multicolor infrared photodetector
JP2941349B2 (ja) * 1990-04-06 1999-08-25 株式会社日立製作所 超格子ａｐｄ
JP2825929B2 (ja) * 1990-05-14 1998-11-18 ユピテル工業株式会社 半導体受光素子
JP2825930B2 (ja) * 1990-05-14 1998-11-18 ユピテル工業株式会社 半導体受光素子
US5031013A (en) * 1990-08-13 1991-07-09 The United States Of America As Represented By The Secretary Of The Army Infrared hot-electron transistor
JP2825957B2 (ja) * 1990-09-18 1998-11-18 ユピテル工業株式会社 半導体受光素子
EP0555402A1 (en) * 1990-10-31 1993-08-18 Martin Marietta Corporation Miniband transport quantum well infrared detector
US5965899A (en) * 1990-10-31 1999-10-12 Lockheed Martin Corp. Miniband transport quantum well detector
US5563423A (en) * 1991-08-15 1996-10-08 Hughes Aircraft Company Dark current-free multiquantum well superlattice infrared detector
US5239186A (en) * 1991-08-26 1993-08-24 Trw Inc. Composite quantum well infrared detector
US5300789A (en) * 1991-12-24 1994-04-05 At&T Bell Laboratories Article comprising means for modulating the optical transparency of a semiconductor body, and method of operating the article
US5198659A (en) * 1992-03-23 1993-03-30 The United States Of America As Represented By The Secretary Of The Army Wide-range multicolor IR detector
US5223704A (en) * 1992-03-31 1993-06-29 At&T Bell Laboratories Planar buried quantum well photodetector
US6320200B1 (en) 1992-06-01 2001-11-20 Yale University Sub-nanoscale electronic devices and processes
US5475341A (en) * 1992-06-01 1995-12-12 Yale University Sub-nanoscale electronic systems and devices
JPH06214169A (ja) * 1992-06-08 1994-08-05 Texas Instr Inc <Ti> 制御可能な光学的周期的表面フィルタ
US5311009A (en) * 1992-07-31 1994-05-10 At&T Bell Laboratories Quantum well device for producing localized electron states for detectors and modulators
US5313073A (en) * 1992-08-06 1994-05-17 University Of Southern California Light detector using intersub-valence band transitions with strained barriers
US5627672A (en) * 1993-02-26 1997-05-06 Texas Instruments Incorporated Controllable optical periodic surface filters as a Q-switch in a resonant cavity
GB9304211D0 (en) * 1993-03-02 1993-04-21 Univ Manchester A quantom well device
KR960004594B1 (ko) * 1993-03-17 1996-04-09 엘지전자주식회사 적외선 광 검출기
US5304805A (en) * 1993-03-26 1994-04-19 Massachusetts Institute Of Technology Optical-heterodyne receiver for environmental monitoring
US5347142A (en) * 1993-06-25 1994-09-13 The United States Of America As Represented By The Secretary Of The Army Modes of infrared hot electron transistor operation in infrared detection
US5554882A (en) * 1993-11-05 1996-09-10 The Boeing Company Integrated trigger injector for avalanche semiconductor switch devices
US5539206A (en) * 1995-04-20 1996-07-23 Loral Vought Systems Corporation Enhanced quantum well infrared photodetector
US5567955A (en) * 1995-05-04 1996-10-22 National Research Council Of Canada Method for infrared thermal imaging using integrated gasa quantum well mid-infrared detector and near-infrared light emitter and SI charge coupled device
US6211529B1 (en) 1996-08-27 2001-04-03 California Institute Of Technology Infrared radiation-detecting device
US6054718A (en) * 1998-03-31 2000-04-25 Lockheed Martin Corporation Quantum well infrared photocathode having negative electron affinity surface
JP2001044453A (ja) 1999-07-30 2001-02-16 Fujitsu Ltd 光検出素子
JP4330210B2 (ja) 1999-07-30 2009-09-16 富士通株式会社 光半導体装置及びその製造方法
WO2001047031A2 (en) * 1999-12-13 2001-06-28 Swales Aerospace Graded band gap multiple quantum well solar cell
US6576490B2 (en) 2001-05-09 2003-06-10 National Research Council Of Canada Method for micro-fabricating a pixelless infrared imaging device
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
CA2447828C (en) * 2003-10-15 2012-07-03 National Research Council Of Canada Wavelength conversion device with avalanche multiplier
US7180066B2 (en) * 2004-11-24 2007-02-20 Chang-Hua Qiu Infrared detector composed of group III-V nitrides
KR100785738B1 (ko) 2006-06-19 2007-12-18 한국과학기술원 볼로미터
US8653461B1 (en) 2007-03-23 2014-02-18 Flir Systems, Inc. Thermography camera tuned to detect absorption of infrared radiation in a selected spectral bandwidth
US8659664B2 (en) 2007-03-23 2014-02-25 Flir Systems, Inc. Thermography camera configured for leak detection
DE102008006987A1 (de) * 2008-01-31 2009-08-06 Osram Opto Semiconductors Gmbh Strahlungsempfänger und Verfahren zur Herstellung eines Strahlungsempfängers
FR2936602B1 (fr) * 2008-09-30 2010-10-01 Thales Sa Detecteur terahertz a puits quantiques
US8476598B1 (en) * 2009-08-31 2013-07-02 Sionyx, Inc. Electromagnetic radiation imaging devices and associated methods
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
JP5489626B2 (ja) * 2009-10-02 2014-05-14 京セラ株式会社 光電変換素子および光電変換方法
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
US20120146172A1 (en) 2010-06-18 2012-06-14 Sionyx, Inc. High Speed Photosensitive Devices and Associated Methods
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
WO2013010127A2 (en) 2011-07-13 2013-01-17 Sionyx, Inc. Biometric imaging devices and associated methods
KR101920712B1 (ko) * 2011-08-26 2018-11-22 삼성전자주식회사 튜너블 배리어를 구비한 그래핀 스위칭 소자
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
WO2013172078A1 (ja) * 2012-05-16 2013-11-21 浜松ホトニクス株式会社 光学素子及び光検出器
KR20150130303A (ko) 2013-02-15 2015-11-23 사이오닉스, 아이엔씨. 안티 블루밍 특성 및 관련 방법을 가지는 높은 동적 범위의 cmos 이미지 센서
US9939251B2 (en) 2013-03-15 2018-04-10 Sionyx, Llc Three dimensional imaging utilizing stacked imager devices and associated methods
WO2014209421A1 (en) 2013-06-29 2014-12-31 Sionyx, Inc. Shallow trench textured regions and associated methods
EP3039723B1 (en) * 2013-08-27 2024-07-03 Georgia State University Research Foundation, Inc. Tunable hot-carrier photodetector
WO2020170703A1 (ja) * 2019-02-20 2020-08-27 パナソニックＩｐマネジメント株式会社 撮像装置およびその駆動方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4348686A (en) * 1980-07-28 1982-09-07 The United States Of America As Represented By The Secretary Of The Army Microwave-infrared detector with semiconductor superlattice region
GB2106314A (en) * 1981-09-18 1983-04-07 Philips Electronic Associated Infra-red radiation imaging devices
US4525731A (en) * 1982-12-30 1985-06-25 International Business Machines Corporation Semiconductor conversion of optical-to-electrical energy
US4607272A (en) * 1983-10-06 1986-08-19 The United States Of America As Represented By The United States Department Of Energy Electro-optical SLS devices for operating at new wavelength ranges
US4620214A (en) * 1983-12-02 1986-10-28 California Institute Of Technology Multiple quantum-well infrared detector
US4581621A (en) * 1984-07-02 1986-04-08 Texas Instruments Incorporated Quantum device output switch
US4679061A (en) * 1985-06-14 1987-07-07 American Telephone And Telegraph Company, At&T Bell Laboratories Superlattice photoconductor

Also Published As

Publication number Publication date
US4894526A (en) 1990-01-16
DE3854333D1 (de) 1995-09-28
CA1302546C (en) 1992-06-02
EP0275150B1 (en) 1995-08-23
JPS63246626A (ja) 1988-10-13
EP0275150A2 (en) 1988-07-20
JP2642114B2 (ja) 1997-08-20
KR960008181B1 (ko) 1996-06-20
DE3854333T2 (de) 1996-04-18
EP0275150A3 (en) 1989-09-13
ES2076156T3 (es) 1995-11-01

Similar Documents

Publication Publication Date Title
KR890012157A (ko) 적외선 방사 검출 장치
US5013918A (en) Multicolor infrared photodetector
US6720588B2 (en) Avalanche photodiode for photon counting applications and method thereof
US4775881A (en) Semiconductor device for detecting electromagnetic radiation or particles
US5144397A (en) Light responsive semiconductor device
US4205331A (en) Infrared optical devices of layered structure
EP0206117B1 (en) A photodetector
JP2782877B2 (ja) 光放射の検出及び処理装置
US5191784A (en) Opto-electronic gas sensor
JPH10223874A (ja) 電磁波検出器
JPH06334209A (ja) 光電子検出器
US5160991A (en) Electromagnetic wave detector and image analyzer comprising a detector of this type
DE112014001833T5 (de) Halbleiterphotosensor für Infrarotstrahlung
US4146904A (en) Radiation detector
Winogradoff Field control of the quantum efficiency of radiative recombination in semiconductors
JPS5718372A (en) Semiconductor photoreceiving element
US4586074A (en) Impurity band conduction semiconductor devices
US4140909A (en) Radiation detector
US6316771B1 (en) Superlattice tunable detector system
Khudaverdyan et al. On the semiconductor spectroscopy for identification of emergent contaminants in transparent mediums
US6326639B1 (en) Heterostructure semiconductor radiation detector for wavelengths from the infrared spectral range
US4101924A (en) Semiconductor radiation detector
Cakmakyapan et al. High responsivity and bias-free graphene photodetector with nano-grating contact electrodes
US3936637A (en) Thermally stimulated detrapping of charged carriers in cryogenic photoconductive material
KR100251534B1 (ko) 측면 수광 공명 투과 소자를 이용한 다중 피크 발생 방법

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20010531

Year of fee payment: 6

LAPS Lapse due to unpaid annual fee