KR890012157A - 적외선 방사 검출 장치 - Google Patents
적외선 방사 검출 장치 Download PDFInfo
- Publication number
- KR890012157A KR890012157A KR1019880000235A KR880000235A KR890012157A KR 890012157 A KR890012157 A KR 890012157A KR 1019880000235 A KR1019880000235 A KR 1019880000235A KR 880000235 A KR880000235 A KR 880000235A KR 890012157 A KR890012157 A KR 890012157A
- Authority
- KR
- South Korea
- Prior art keywords
- radiation detection
- quantum well
- superlattice
- infrared radiation
- infrared
- Prior art date
Links
- 230000005855 radiation Effects 0.000 title claims description 9
- 238000001514 detection method Methods 0.000 title claims 9
- 239000004065 semiconductor Substances 0.000 claims 4
- 238000000034 method Methods 0.000 claims 2
- 230000005641 tunneling Effects 0.000 claims 2
- 230000004888 barrier function Effects 0.000 claims 1
- 238000005036 potential barrier Methods 0.000 claims 1
- 230000006335 response to radiation Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Biophysics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 전압원 및 전류 측정 장치를 포함하는 간단한 테스트 배치로 본 발명에 따른 적외선 방사 검출기의 구조의 확장 개략도.
제2도는 회절 격자를 포함하여, 제1도에 도시된 구조와 다른 구조의 도시도.
제3도는 바이어스 필드를 가진 본 발명에 따른 장치에 대응하는 에너지 밴드 다이어그램.
Claims (11)
- 다수의 양자웰을 구성하는 반도체 층을 구비하는 기판-지지된 헤테로구조 초격자 및, 상기 초격자에 입사되는 방사에 응답하여 전기 신호를 감지하며 상기 초격자를 전기적으로 바이어스하는 접촉 수단을 포함하는 적외선-방사 검출기를 구비하는 장치에 있어서, 상기 장치는 상기 양자웰중의 적어도 하나는 적어도 두개의 편재된 상태를 갖는 것을 특징으로 하는 적외선-방사 검출장치.
- 제1항에 있어서, 상기 양자웰은 두개의 편재된 상태를 갖는것을 특징으로 하는 적외선-방사 검출장치.
- 제1항에 있어서, 바이어스 필드가 존재할 시에, 상기 양자웰의 적어도 일부분은 본질적으로 선형적인 에너지 순서를 구성하는 것을 특징으로 하는 적외선-방사 검출 장치.
- 제1항에 있어서, 바이어스 필드가 존재할 시에, 상기 양자웰의 적어도 일부분은 포물선 성분을 가지고 있는 에너지의 순서를 구성하는 것을 특징으로 하는적외선-방사 검출장치.
- 제1항에 있어서, 제1양자웰의 제1상태의 에너지 레벨은 제2양자웰의 제2상태의 에너지 레벨과 본질적으로 동일하며, 상기 제2양자웰은 상기 제2양자웰에 근접한 것을 특징으로 하는 적외선-방사 검출장치.
- 제1항에 있어서, 상기 반도체층은 합성 반도체 층인 것을 특징으로 하는 적외선-방사 검출장치.
- 제1항에 있어서, 전위 장벽을 가지고 있는 상기 양자웰은 암전류와 비교된 것으로서 광전류의 공진 터넬링을 촉진하도록 선택되는 것을 특징으로 하는 적외선-방사 검출장치.
- 제7항에 있어서, 상기 장벽은 개량된 종합적인 프로화일을 갖는 것을 특징으로 하는 적외선-방사 검출장치.
- 제7항에 있어서, 양자웰 쌍은 공진 터넬링이 에너지 레벨을 매치시킴으로써 광전류 전자를 위해 촉진되며, 그리고 에너지 레벨 매칭의 부족으로 인한 암전류 전자를 위해 방해되게 되는 것을 특징으로 하는 적외선-방사 검출장치.
- 다수의 양자웰을 구성하는 반도체 층을 구비하는 기판-지지된 헤테로 구조체 초격자에 입사되는 방사를 형성하는 단계 및, 상기 초격자를 통하여 흐르는 전류를 감지하는 단계를 구비하는 적외선 방사 검출 방법에 있어서, 상기 양자웰중의 적어도 하나는 적어도 두개의 편재된 상태를 가지고 있으며 그리고, 적어도 하나의 양자웰 양단의 전압이 상기 편재된 상태사이의 에너지 차보다 더 크게되도록 상기 초격자가 전기적으로 바이어스 되는 것을 특징으로 하는 적외선 방사 검출방법.
- 제10항에 있어서, 상기 전압은 상기 에너지 차와 같거나 또는 상기 에너지차의 1.25배와 대략 같은 것을 특징으로 하는 적외선 방사 검출장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US419187A | 1987-01-15 | 1987-01-15 | |
US004,191 | 1987-01-15 | ||
US004191 | 1987-01-15 | ||
US097567 | 1987-09-15 | ||
US097,567 | 1987-09-15 | ||
US07/097,567 US4894526A (en) | 1987-01-15 | 1987-09-15 | Infrared-radiation detector device |
Publications (2)
Publication Number | Publication Date |
---|---|
KR890012157A true KR890012157A (ko) | 1989-08-24 |
KR960008181B1 KR960008181B1 (ko) | 1996-06-20 |
Family
ID=26672731
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019880000235A KR960008181B1 (ko) | 1987-01-15 | 1988-01-15 | 적외선 방사 검출 장치 및 그 방법 |
Country Status (7)
Country | Link |
---|---|
US (1) | US4894526A (ko) |
EP (1) | EP0275150B1 (ko) |
JP (1) | JP2642114B2 (ko) |
KR (1) | KR960008181B1 (ko) |
CA (1) | CA1302546C (ko) |
DE (1) | DE3854333T2 (ko) |
ES (1) | ES2076156T3 (ko) |
Families Citing this family (67)
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US6201242B1 (en) | 1987-08-05 | 2001-03-13 | Lockheed Martin Corporation | Bandgap radiation detector |
US5023685A (en) * | 1988-06-06 | 1991-06-11 | Bethea Clyde G | Quantum-well radiation-interactive device, and methods of radiation detection and modulation |
JPH02116175A (ja) * | 1988-10-26 | 1990-04-27 | Sumitomo Electric Ind Ltd | 半導体受光素子 |
JPH02121370A (ja) * | 1988-10-29 | 1990-05-09 | Sumitomo Electric Ind Ltd | 光検出器 |
US5185647A (en) * | 1988-12-12 | 1993-02-09 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Long wavelength infrared detector |
JPH081949B2 (ja) * | 1989-05-30 | 1996-01-10 | 三菱電機株式会社 | 赤外線撮像装置及びその製造方法 |
US5036371A (en) * | 1989-09-27 | 1991-07-30 | The United States Of America As Represented By The Secretary Of The Navy | Multiple quantum well device |
US5079601A (en) * | 1989-12-20 | 1992-01-07 | International Business Machines Corporation | Optoelectronic devices based on intraband transitions in combinations of type i and type ii tunnel junctions |
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US5313073A (en) * | 1992-08-06 | 1994-05-17 | University Of Southern California | Light detector using intersub-valence band transitions with strained barriers |
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US4679061A (en) * | 1985-06-14 | 1987-07-07 | American Telephone And Telegraph Company, At&T Bell Laboratories | Superlattice photoconductor |
-
1987
- 1987-09-15 US US07/097,567 patent/US4894526A/en not_active Expired - Lifetime
-
1988
- 1988-01-07 DE DE3854333T patent/DE3854333T2/de not_active Expired - Fee Related
- 1988-01-07 ES ES88300096T patent/ES2076156T3/es not_active Expired - Lifetime
- 1988-01-07 EP EP88300096A patent/EP0275150B1/en not_active Expired - Lifetime
- 1988-01-14 JP JP63005006A patent/JP2642114B2/ja not_active Expired - Lifetime
- 1988-01-15 CA CA000556608A patent/CA1302546C/en not_active Expired - Fee Related
- 1988-01-15 KR KR1019880000235A patent/KR960008181B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US4894526A (en) | 1990-01-16 |
DE3854333D1 (de) | 1995-09-28 |
CA1302546C (en) | 1992-06-02 |
EP0275150B1 (en) | 1995-08-23 |
JPS63246626A (ja) | 1988-10-13 |
EP0275150A2 (en) | 1988-07-20 |
JP2642114B2 (ja) | 1997-08-20 |
KR960008181B1 (ko) | 1996-06-20 |
DE3854333T2 (de) | 1996-04-18 |
EP0275150A3 (en) | 1989-09-13 |
ES2076156T3 (es) | 1995-11-01 |
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