KR870005477A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR870005477A
KR870005477A KR860009364A KR860009364A KR870005477A KR 870005477 A KR870005477 A KR 870005477A KR 860009364 A KR860009364 A KR 860009364A KR 860009364 A KR860009364 A KR 860009364A KR 870005477 A KR870005477 A KR 870005477A
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semiconductor
layer
semiconductor device
electrode
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KR860009364A
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English (en)
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히데오 야마기시
마사다가 곤도오
구니오 니시무라
아기히고 히로에
게이 죠오 아사오까
가즈 노리 쓰게
요시히사 다와다
미노리 야마구찌
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니이노 마비도
가네가후찌 가가꾸 고오교오 가부시끼 가이샤
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Priority claimed from JP60247463A external-priority patent/JPS62106670A/ja
Priority claimed from JP60255681A external-priority patent/JP2545066B2/ja
Priority claimed from JP61099939A external-priority patent/JPS62256481A/ja
Application filed by 니이노 마비도, 가네가후찌 가가꾸 고오교오 가부시끼 가이샤 filed Critical 니이노 마비도
Publication of KR870005477A publication Critical patent/KR870005477A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table including AIVBIV alloys, e.g. SiGe, SiC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

내용 없음

Description

반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1양태를 나타낸 것으로 핀-형 반도체층으로 이루어진 반도체 장치의 개요도이며,
제2도는 본 발명의 제 양태를 나타낸 것으로 닙-형 반도체 층으로 이루어진 반도체 장치의 개요도이며,
제3도는 본 발명의 제2양태를 나타낸 반도체 장치의 설명도이다.

Claims (22)

  1. 중간층에 이웃하는 반도체보다 전기 저항이 큰 절연체나 반도체도 만들어진 최소한 하나의 중간층이 반도체층 사이나 반도체와 전극 사이에 들어감을 특징으로 하는 핀-형 또는 닙-형 무정질-함유 반도체층 그리고 최소한 2개의 전극으로 구성된 반도체 장치.
  2. 제1항에 있어서, 중간층이 p-형 반도체와 i-형 반도체의 사이 및/또는 n-형 반도체와 i-형 반도체의 사이 형성된 반도체 장치.
  3. 제1항에 있어서, 중간층이 한 전도형의 반도체와 전극 사이에 형성된 반도체 장치.
  4. 제1항에 있어서, 중간층이 Si1-xC:X:Y, Si1-xNx:X:Y 및 Si1-xO:X:Y(여기서 x는 0〈X〈1의 관계를 만족하는 수이며, X는 H,Cl,F 또 Br이고, Y는 H,Cl,F 또는 Br임)로 이루어진 그룹에서 선택된 층인 반도체 장치.
  5. 제1항에 있어서, 중간층이 Si1-xCx:H(여기저 X는 0〈X〈1의 관계를 만족하는 수임)인 반도체 장치.
  6. 제1항에 있어서, 최소한 하나의 중간층이 p-형 무정질-함유 반도체층에 인접하여 형성된 반도체 장치.
  7. 제1항에 있어서, 중간층이 p-형과 i-형 무정질-함유 반도체층 사이에 형성된 반도체 장치.
  8. 제1항 내지 7항중의 어느 하나에 있어서, 중간층의 두께가 10 내지 500Å인 반도체 장치.
  9. p-형 또는 n-형 층의 도판트의 양이 p/i 또는 n/i 접합면에서 최소이고 p/전극 또는 n/전극의 상호면을 향해 점진적으로 증가함을 특징으로 하는 핀-형 또는 닙-형 무정질-함유 반도체층 그리고 최소한 2개의 전극으로 구성된 반도체 장치.
  10. 제9항에 있어서, p-형 층과 n-형 층의 최소한 하나가 a-SiC:H층인 반도체 장치.
  11. 제9항에 있어서, p-형 층과 n-형 층의 최소한 하나가 a-Si:H층인 반도체 장치.
  12. 제9항에 있어서, p-형 또는 n-형 부위의 도판트의 양이 p/i 또는 n/i 접합면으로 부터 최소한 20Å의 두께도 p/ 전극 또는 n/전극의 상호면을 향해 점진적으로 증가해 가는 반도체 장치.
  13. 제9항에 있어서, p-형 또는 n-형 부위의 도판트의 양이 p/i 또는 n/i 접합면으로 부터 최소한 100Å의 두께로 p/전극 또는 n/전극의 상호면을 향해 점진적으로 증가해가는 반도체 장치.
  14. 제9항 내지 11항중의 어느 하나에 있어서, p-형층의 도판트가 B,Al,Ga,In 및 T1로 이루어진 그룹에서 선택된 한 원소인 반도체 장치.
  15. 제9항 내지 11항중의 어느 하나에 있어서, n-형 층의 도판트가 N,P,As,Sb,Te 및 PO로 이루어진 그룹에서 선택된 한 원소인 반도체 장치.
  16. 인접한 반도체(Ⅱ)와 전도형이 동일하고 불순물 밀도가 높은 최소한 하나의 반도체층(I)이 반도체(Ⅱ)과 전극 사이에 들어감을 특징으로 하는, 닙-형 또는 핀-형 무정질-함유 반도체층과 최소한 두개의 전극으로 구성된 반도체 장치.
  17. 제16항에 있어서, 전도형이 p-형 및/또는 n-형인 반도체 장치.
  18. 제17항에 있어서, 반도체 층(I)의 두께가 10 내지 300Å인 반도체 장치.
  19. 제15항에 있어서, p-형 및/또는 n-형 반도체층(I)이 a-SiC:H로 이루어진 반도체 장치.
  20. 제17항 내지 19항중의 어느 하나에 있어서, p-형 및/또는 n-형 반도체층(I)이 a-Si로 이루어진 반도체 장치.
  21. 제17항 내지 19항중의 어느 하나에 있어서, 불순물 밀도가 높은 p-형 또는 n-형 반도체층(I)의 불순물 밀도가 반도체층(Ⅱ)의 것보다 2배 이상인 반도체 장치.
  22. 제17항 내지 19항중의 어느 하나에 있어서, 불순물 밀도가 높은 반도체층(I)의 불순물 밀도가 반도체층(Ⅱ)의 것보다 4배 이상인 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR860009364A 1985-11-05 1986-11-05 반도체 장치 KR870005477A (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP60247463A JPS62106670A (ja) 1985-11-05 1985-11-05 半導体素子
JP247463 1985-11-05
JP255681 1985-11-14
JP60255681A JP2545066B2 (ja) 1985-11-14 1985-11-14 半導体装置
JP61099939A JPS62256481A (ja) 1986-04-30 1986-04-30 半導体装置
JP99939 1986-04-30

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KR870005477A true KR870005477A (ko) 1987-06-09

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US (1) US5032884A (ko)
EP (3) EP0494088B1 (ko)
KR (1) KR870005477A (ko)
CN (1) CN1036817C (ko)
AU (2) AU600453B2 (ko)
CA (1) CA1321660C (ko)
DE (2) DE3650012T2 (ko)

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Also Published As

Publication number Publication date
EP0221523B1 (en) 1994-08-03
EP0494088A1 (en) 1992-07-08
AU6596690A (en) 1991-01-24
DE3650712D1 (de) 1999-04-01
CN86106353A (zh) 1987-12-02
DE3650012T2 (de) 1994-11-24
US5032884A (en) 1991-07-16
EP0494088B1 (en) 1999-02-24
AU636677B2 (en) 1993-05-06
CN1036817C (zh) 1997-12-24
AU600453B2 (en) 1990-08-16
DE3650712T2 (de) 1999-09-30
DE3650012D1 (de) 1994-09-08
EP0494090A2 (en) 1992-07-08
CA1321660C (en) 1993-08-24
EP0221523A3 (en) 1989-07-26
AU6461986A (en) 1987-05-07
EP0494090A3 (en) 1992-08-05
EP0221523A2 (en) 1987-05-13

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