MX159519A - Metodo mejorado para detectar y eliminar trayectorias de corriente de corto circuito en dispositivos fotovoltaicos - Google Patents
Metodo mejorado para detectar y eliminar trayectorias de corriente de corto circuito en dispositivos fotovoltaicosInfo
- Publication number
- MX159519A MX159519A MX199163A MX19916383A MX159519A MX 159519 A MX159519 A MX 159519A MX 199163 A MX199163 A MX 199163A MX 19916383 A MX19916383 A MX 19916383A MX 159519 A MX159519 A MX 159519A
- Authority
- MX
- Mexico
- Prior art keywords
- detecting
- short circuit
- improved method
- circuit current
- photovoltaic devices
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/208—Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/469—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers
- H01L21/47—Organic layers, e.g. photoresist
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/206—Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/520,054 US4464823A (en) | 1982-10-21 | 1983-08-03 | Method for eliminating short and latent short circuit current paths in photovoltaic devices |
Publications (1)
Publication Number | Publication Date |
---|---|
MX159519A true MX159519A (es) | 1989-06-26 |
Family
ID=24071012
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX199163A MX159519A (es) | 1983-08-03 | 1983-10-20 | Metodo mejorado para detectar y eliminar trayectorias de corriente de corto circuito en dispositivos fotovoltaicos |
Country Status (8)
Country | Link |
---|---|
EP (1) | EP0134364A3 (es) |
JP (1) | JPS6046080A (es) |
KR (1) | KR850003476A (es) |
AU (1) | AU2042183A (es) |
BR (1) | BR8305792A (es) |
ES (1) | ES8503889A1 (es) |
IN (1) | IN160221B (es) |
MX (1) | MX159519A (es) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0213910B1 (en) * | 1985-08-24 | 1994-03-02 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device free from the current leakage through a semi-conductor layer |
US6228662B1 (en) | 1999-03-24 | 2001-05-08 | Kaneka Corporation | Method for removing short-circuited sections of a solar cell |
ATE240589T1 (de) * | 1999-03-25 | 2003-05-15 | Kaneka Corp | Verfahren zum herstellen von dünnschicht- solarzellen-modulen |
AU766466B2 (en) * | 1999-05-14 | 2003-10-16 | Kaneka Corporation | Reverse biasing apparatus for solar battery module |
JP4627575B2 (ja) * | 1999-08-12 | 2011-02-09 | 株式会社カネカ | 太陽電池の短絡部除去方法 |
JP2007189199A (ja) | 2005-12-12 | 2007-07-26 | Tdk Corp | キャパシタおよびその製造方法 |
JPWO2010029939A1 (ja) * | 2008-09-09 | 2012-02-02 | 三洋電機株式会社 | 太陽電池モジュールの製造方法 |
KR101484055B1 (ko) | 2011-11-14 | 2015-01-20 | 가부시키가이샤 니혼 마이크로닉스 | 시트상 전지의 리페어 장치 |
DE102018001057A1 (de) * | 2018-02-07 | 2019-08-08 | Aic Hörmann Gmbh & Co. Kg | Verfahren zur Verbesserung des ohmschen Kontaktverhaltens zwischen einem Kontaktgitter und einer Ermitterschicht einer Siliziumsolarzelle |
CN108233329B (zh) * | 2018-03-16 | 2024-05-31 | 西安赛诺克新能源科技有限公司 | 一种提高主电路断开响应速度的保护电路 |
CN117353651B (zh) * | 2023-10-16 | 2024-04-16 | 中科宏一教育科技集团有限公司 | 光伏系统控制方法、装置、设备和介质 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4197141A (en) * | 1978-01-31 | 1980-04-08 | Massachusetts Institute Of Technology | Method for passivating imperfections in semiconductor materials |
US4166918A (en) * | 1978-07-19 | 1979-09-04 | Rca Corporation | Method of removing the effects of electrical shorts and shunts created during the fabrication process of a solar cell |
JPS5683981A (en) * | 1979-12-13 | 1981-07-08 | Matsushita Electric Ind Co Ltd | Semiconductor device and manufacture |
US4385971A (en) * | 1981-06-26 | 1983-05-31 | Rca Corporation | Electrolytic etch for eliminating shorts and shunts in large area amorphous silicon solar cells |
-
1983
- 1983-10-19 AU AU20421/83A patent/AU2042183A/en not_active Abandoned
- 1983-10-20 JP JP58196928A patent/JPS6046080A/ja active Granted
- 1983-10-20 MX MX199163A patent/MX159519A/es unknown
- 1983-10-20 ES ES526597A patent/ES8503889A1/es not_active Expired
- 1983-10-20 BR BR8305792A patent/BR8305792A/pt unknown
- 1983-10-20 KR KR1019830004960A patent/KR850003476A/ko not_active Application Discontinuation
- 1983-10-21 EP EP83306405A patent/EP0134364A3/en not_active Withdrawn
- 1983-10-29 IN IN722/DEL/83A patent/IN160221B/en unknown
Also Published As
Publication number | Publication date |
---|---|
IN160221B (es) | 1987-07-04 |
ES526597A0 (es) | 1985-03-01 |
BR8305792A (pt) | 1985-05-21 |
ES8503889A1 (es) | 1985-03-01 |
EP0134364A3 (en) | 1986-06-04 |
EP0134364A2 (en) | 1985-03-20 |
KR850003476A (ko) | 1985-06-17 |
AU2042183A (en) | 1985-02-07 |
JPS6046080A (ja) | 1985-03-12 |
JPH0572756B2 (es) | 1993-10-12 |
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