KR960039446A - 반도체 광전소자 - Google Patents
반도체 광전소자 Download PDFInfo
- Publication number
- KR960039446A KR960039446A KR1019950008910A KR19950008910A KR960039446A KR 960039446 A KR960039446 A KR 960039446A KR 1019950008910 A KR1019950008910 A KR 1019950008910A KR 19950008910 A KR19950008910 A KR 19950008910A KR 960039446 A KR960039446 A KR 960039446A
- Authority
- KR
- South Korea
- Prior art keywords
- impurity region
- thin film
- impurity
- conductivity type
- applying
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 8
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 6
- 239000012535 impurity Substances 0.000 claims abstract 22
- 239000010408 film Substances 0.000 claims abstract 6
- 239000000758 substrate Substances 0.000 claims abstract 5
- 239000010409 thin film Substances 0.000 claims abstract 5
- 239000000463 material Substances 0.000 claims abstract 3
- 230000015572 biosynthetic process Effects 0.000 claims abstract 2
- 229910052792 caesium Inorganic materials 0.000 claims 2
- -1 cesium metal oxide Chemical class 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 230000001681 protective effect Effects 0.000 abstract 2
- 238000001514 detection method Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000011241 protective layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0321—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 characterised by the doping material
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Sustainable Energy (AREA)
- Light Receiving Elements (AREA)
Abstract
본 발명에 의한 반도체 광전소자는 반도체기판상에 기판과, 같은 도전형의 고,농도 불순물을 주입하여 형성시킨 제1불순물영역과 제 1불순물영역에 기판과, 반대 도전형의 불순물을 주압하여 형성시킨 제2불순물영역과 제2불순물영역의 표면에 입사광의 에너지에 따른 광전효과를 유발하여 광신호 검출을 용이하도록 하기 위하여 빛에 민감하게 반응하여 이온화 경향이 큰 물질로 형성시킨 박막(film)과 제1불순물영역에 전압을 인가하기위한 제1도전층과, 제2불순물영역에 전압을 인가하기 위한 제2도전층과 제1불순물영역과, 제2불순물영역의 표면을 보호하는 표면보호막과 박막 형성부위의 표면 보호막을 제거하고 수광물질로 충전시킨 윈도우(window)와, 윈도우 상면에서 형성되어 입사되는 빛의 반사를 방지하는 반사방지막으로 이루어진다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 종래의 반도체 광전소자를 설명하기 위한 도면, 제2도는 본 발명에 의한 반도체 광전소자를 설명하기 위한 도면.
Claims (2)
- 반도체 소자의 광전소자에 있어서, 반도체기판상에 기판과, 같은 도전형의 고,농도 불순물을 주입하여 형성시킨 제1불순물영역과 상기 제1불순물영역에 상기 기판과, 반대 도전형의 불순물을 주입하여 형성시킨 제2불순물영역과 상기 제2불순물영역의 표면에 빛에민감하게 반응하고 이온화경향이 있는 큰 물질로 형성시킨 박막과상기 제1불순물영역에 전압을 인가하기위한 제1도전층과, 상기 제2불순물영역에 전압을 인가하기 위한 제2도전층과, 상기 제1불순물영역과, 상기 제2불순물영역의 표면을 보호하는 표면보호막과 상기 박막 형성부위의 상기 표면보호막을 제거하고 수광물질로 충진시킨 윈도우와, 상기 윈도우 상면에서 형성되어 입사되는 빛의 반사를 방지하는 반사방지막으로 이루어진 반도체 광전소자.
- 제1항에 있어서, 상기 박막은 은∼세슘 금속산화물(Ag∼O∼Cs) 또는 인타몬∼세슘 금속화합물(Sb∼Cs)로 형성시킨 것을 특징으로 하는 반도체 광전소자.※ 참고사항: 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950008910A KR100336555B1 (ko) | 1995-04-15 | 1995-04-15 | 반도체광전소자 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950008910A KR100336555B1 (ko) | 1995-04-15 | 1995-04-15 | 반도체광전소자 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR960039446A true KR960039446A (ko) | 1996-11-25 |
| KR100336555B1 KR100336555B1 (ko) | 2002-11-18 |
Family
ID=37479921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950008910A KR100336555B1 (ko) | 1995-04-15 | 1995-04-15 | 반도체광전소자 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR100336555B1 (ko) |
-
1995
- 1995-04-15 KR KR1019950008910A patent/KR100336555B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR100336555B1 (ko) | 2002-11-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| N231 | Notification of change of applicant | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20050422 Year of fee payment: 4 |
|
| LAPS | Lapse due to unpaid annual fee |