KR830006819A - 실리콘체의 연속 화학증기 침전생성물을 위한 복합 가스막 - Google Patents
실리콘체의 연속 화학증기 침전생성물을 위한 복합 가스막 Download PDFInfo
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- KR830006819A KR830006819A KR1019810002705A KR810002705A KR830006819A KR 830006819 A KR830006819 A KR 830006819A KR 1019810002705 A KR1019810002705 A KR 1019810002705A KR 810002705 A KR810002705 A KR 810002705A KR 830006819 A KR830006819 A KR 830006819A
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- 239000000126 substance Substances 0.000 title claims description 7
- 229920001296 polysiloxane Polymers 0.000 title claims 2
- 239000002131 composite material Substances 0.000 title description 2
- 239000012528 membrane Substances 0.000 title description 2
- 238000004062 sedimentation Methods 0.000 title 1
- 238000001556 precipitation Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 13
- 239000012495 reaction gas Substances 0.000 claims 13
- 229910052710 silicon Inorganic materials 0.000 claims 13
- 239000010703 silicon Substances 0.000 claims 13
- 239000007789 gas Substances 0.000 claims 11
- 238000000354 decomposition reaction Methods 0.000 claims 9
- 238000005229 chemical vapour deposition Methods 0.000 claims 8
- 238000010438 heat treatment Methods 0.000 claims 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 4
- 239000013078 crystal Substances 0.000 claims 3
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 3
- 229910052786 argon Inorganic materials 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- 229910052736 halogen Inorganic materials 0.000 claims 2
- 150000002367 halogens Chemical group 0.000 claims 2
- 229910052734 helium Inorganic materials 0.000 claims 2
- 239000001307 helium Substances 0.000 claims 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 150000002431 hydrogen Chemical class 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 229910052743 krypton Inorganic materials 0.000 claims 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims 2
- 229910052754 neon Inorganic materials 0.000 claims 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims 2
- 229910052704 radon Inorganic materials 0.000 claims 2
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 claims 2
- 150000003377 silicon compounds Chemical class 0.000 claims 2
- 238000005406 washing Methods 0.000 claims 2
- 229910052724 xenon Inorganic materials 0.000 claims 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims 2
- 238000006243 chemical reaction Methods 0.000 claims 1
- 239000012141 concentrate Substances 0.000 claims 1
- 238000002425 crystallisation Methods 0.000 claims 1
- 230000008025 crystallization Effects 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
- 238000007789 sealing Methods 0.000 claims 1
- 238000010924 continuous production Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/025—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/906—Special atmosphere other than vacuum or inert
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
본 도면은 본 발명을 실행하는데 유용한 장치를 확대항 것으로써 둘 또는 그 이상의 복합 가스막은 본 발명에 따른 연속공정을 실행하기 위해 연속화학 증기 침전실의 벽을 따라 제공되었다.
Claims (4)
- 가스성 실리콘 화합물을 분해시킬 수 있는 온도까지 하나 또는 그 이상의 실리콘 세봉(Silm rod)을 가열시키며; 가열시킨 실리콘 세봉을 화학중기 침전실로 통과시키며; 실리콘 세봉의 표면온도를 가열기구로 약 1000℃ 내지 1300℃까지 유지시키며; 실리콘 세봉을 일반식 SikHmXn의 반응가스와 접촉시키며; 화학증기 침전실 내벽을 따라 첫번째 가스막을 형성시켜, 이 첫번째 막이 반응가스와 역류로 흐르며 반응가스의 입구점에서부터 반대끝으로 실에 들어가도록 하며 ; 반응가스 입구 부근에 내벽실을 따라 두번째 가스막을 분해실까지 형성시키며, 봉이 분해실을 통해 움직이므로써 봉의 표면상에 실리콘을 침전시키며; 및 분해실로부터 생성된 확장 결정성 실리콘체를 회수시킴을 특징으로 하여 결정성 실리콘체를 연속적으로 제조하는 방법.상기식에서k는 1 내지 2의 수이고, m은 0 내지 6의 수이고, n은 0내지 6의 수이고, X는 할로겐이다.
- 용융 실리콘원의 시이드(Seed)결정 작용으로부터 예인실(Pulling chamber)내의 처녀세봉을 예인시키며, 가스성 실리콘 화합물을 분해시킬 수 있는 온도까지 단일결정실리콘 세봉을 가열시키며; 가열된 단일 결정실리콘 세봉을 화학증기 침전실가지 통과시키며; 단일 결정세봉의 표면온도를 가열기루로 약 1000℃내지 1300℃까지 유지시키며, 단일결정 세봉을 일반식 SikHmXn의 반응가스와 접촉시키며; 수소, 헬륨, 네온, 아르곤, 크립톤, 세논 및 라돈을 구성하는 그룹으로부터 선택된 첫번째 가스막을 화학증기 침전실 내벽을 따라 형성시켜, 첫번째 가스막이 역류로 흐르도록 하여 반응가스 입구와 반대역으로 들어가도록 하며; 반응가스 입구부근의 내벽을 따라 수소-염소막을 분해실가지 형성시키며, 봉이 분해실을 통해 움직임으로써 단일 결정실리콘봉의 표면상에 실리콘을 침전시키며 및 분해실로부터 생성된 확장셜정성 실리콘체를 회수시킴을 특징으로 하여 단일결정 실리콘을 연속적으로 제조하는 방법.상기식에서k는 1내지 2의 수이고, m은 0내지 6의수이고, n은 0내지 6의 수이고, X는 할로겐이다.
- 하나 또는 그 이상의 시이드 결정과 용융실리콘 원의 반응으로부터 예인실내의 하나 또는 그 이상의 처녀 실리콘 세봉을 예인시키며, 실리콘세봉을 예열시켜 화학증기 침전실로 도입시키며; 가스성 화합물을 함유하는 실리콘을 분해시킬 수 있는 온도까지 도임된 세봉을 동시에 가열시켜 세봉과 가스성 화합물을 접촉시키며; 수소, 헬륨, 네온, 아르곤, 크립톤, 세논 및 라돈을 구성하는 그룹으로부터 선택된 첫번째 가스막을 화학증기 침전실 내벽을 따라 형성시켜, 첫번재 가스막이 반응가스 흐름과 역류로 흐르도록 하여 반응가스의 도입점으로부터 실의 반대끝으로 도입시키며; 반응가스입구부근의 내벽실을 따라 수소 염소 두번째 가스막을 분해실가지 형성시키며; 봉이 분해실을 통해 움직임으로서 봉의 표면상에 실리콘을 침전시키며; 및 분해실로부터 생성된 확장 결정성 실리콘체를 회수시킴을 특징으로 하여 다결정 실리콘체를 연속적으로 제조하는 방법.
- 성장실로부터 세봉을 화학증기 칩전실로 통과하도록 충분한 직경의 좁은 통로를 통하여 증기침전실 하부와 연결된 사웁 끝과 용융 실리콘 원과 연결된 성장실과 저부 끝을 세봉성장실 ; 화학증기 침전실을 통하여 성장실 안으로 아래에 확장되는 회수성 예인기구; 성장실 세봉 가열기구; 화학증기 침전실벽주위에 방사선을 집중시킬 수 있는 기하학적인 노 및 역을 집중시킬 수 있는 투명한 실벽; 가스압력원 기구를 넣을 수 있는 성장실; 반응가스를 화학증기 침전실가지 넣고 내보낼 수 있는 기구; 첫번째 가스막이 반응가스 입구에서부터 실의 반대끝에 위치한 화학증기 침전실을 따라 가스를 흐르도록 하는 안내기구; 반응가스 입구 부근의 화학증기 침전실 내벽을 따라 가스막을 제공하는 두번째 가스막 입구흐름 안내기구; 및 가스봉임장치를 구성하는 화학증기 침전실 상부 끝으로부터 생성되는 실리콘체를 위한 출구기구를 특징으로 하여 결정성 실리콘체를 연속적으로 성장시키기 위한 장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/172,509 US4444812A (en) | 1980-07-28 | 1980-07-28 | Combination gas curtains for continuous chemical vapor deposition production of silicon bodies |
| US172509 | 1980-07-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR830006819A true KR830006819A (ko) | 1983-10-06 |
| KR850001943B1 KR850001943B1 (ko) | 1985-12-31 |
Family
ID=22628005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019810002705A KR850001943B1 (ko) | 1980-07-28 | 1981-07-25 | 실리콘 결정체의 연속적 제조방법 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4444812A (ko) |
| EP (1) | EP0045599B1 (ko) |
| JP (1) | JPS5751112A (ko) |
| KR (1) | KR850001943B1 (ko) |
| CA (1) | CA1178179A (ko) |
| DE (1) | DE3169538D1 (ko) |
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| US5246536A (en) * | 1986-09-08 | 1993-09-21 | Research Development Corporation Of Japan | Method for growing single crystal thin films of element semiconductor |
| US5171609A (en) * | 1990-12-04 | 1992-12-15 | Fusion Systems Corp. | Fiber curing with fluid flow |
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| US5358603A (en) * | 1992-10-06 | 1994-10-25 | Albemarle Corporation | Process for the removal of a silicon coating from a surface |
| SE9603586D0 (sv) * | 1996-10-01 | 1996-10-01 | Abb Research Ltd | A device for epitaxially growing objects and method for such a growth |
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| US7186630B2 (en) * | 2002-08-14 | 2007-03-06 | Asm America, Inc. | Deposition of amorphous silicon-containing films |
| US6887521B2 (en) * | 2002-08-15 | 2005-05-03 | Micron Technology, Inc. | Gas delivery system for pulsed-type deposition processes used in the manufacturing of micro-devices |
| DE102004038717A1 (de) * | 2004-08-10 | 2006-02-23 | Joint Solar Silicon Gmbh & Co. Kg | Herstellungsverfahren für Reaktor zur Zersetzung von Gasen |
| US7615061B2 (en) * | 2006-02-28 | 2009-11-10 | Arthrocare Corporation | Bone anchor suture-loading system, method and apparatus |
| JP5509578B2 (ja) * | 2007-11-28 | 2014-06-04 | 三菱マテリアル株式会社 | 多結晶シリコン製造装置及び製造方法 |
| KR20130049184A (ko) * | 2010-03-19 | 2013-05-13 | 지티에이티 코포레이션 | 다결정 실리콘 증착 시스템 및 방법 |
| US9029809B2 (en) | 2012-11-30 | 2015-05-12 | Ultratech, Inc. | Movable microchamber system with gas curtain |
| US9443730B2 (en) | 2014-07-18 | 2016-09-13 | Asm Ip Holding B.V. | Process for forming silicon-filled openings with a reduced occurrence of voids |
| US9837271B2 (en) | 2014-07-18 | 2017-12-05 | Asm Ip Holding B.V. | Process for forming silicon-filled openings with a reduced occurrence of voids |
| US10460932B2 (en) | 2017-03-31 | 2019-10-29 | Asm Ip Holding B.V. | Semiconductor device with amorphous silicon filled gaps and methods for forming |
| EP3684967B1 (de) * | 2017-12-05 | 2022-03-02 | Wacker Chemie AG | Verfahren zur bestimmung einer oberflächentemperatur |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL218408A (ko) * | 1954-05-18 | 1900-01-01 | ||
| NL109287C (ko) * | 1955-11-02 | |||
| US3011877A (en) * | 1956-06-25 | 1961-12-05 | Siemens Ag | Production of high-purity semiconductor materials for electrical purposes |
| GB903021A (en) * | 1959-07-17 | 1962-08-09 | Standard Telephones Cables Ltd | Improvements in or relating to the production of silicon |
| CH428675A (de) * | 1960-03-02 | 1967-01-31 | Siemens Ag | Verfahren zur Gewinnung von reinstem Halbleitermaterial, insbesondere Silizium |
| DE1216842B (de) * | 1960-09-30 | 1966-05-18 | Karl Ernst Hoffmann | Verfahren zur Herstellung von reinstem Silicium und Germanium |
| GB1112140A (en) * | 1966-05-27 | 1968-05-01 | Dow Corning | A method and apparatus for the continuous production of semiconductor materials |
| US3635683A (en) * | 1968-06-05 | 1972-01-18 | Texas Instruments Inc | Method of crystal growth by vapor deposition |
| US3809571A (en) * | 1972-04-04 | 1974-05-07 | Union Carbide Corp | Process for making silicon metal |
| US3900597A (en) * | 1973-12-19 | 1975-08-19 | Motorola Inc | System and process for deposition of polycrystalline silicon with silane in vacuum |
| US3963838A (en) * | 1974-05-24 | 1976-06-15 | Texas Instruments Incorporated | Method of operating a quartz fluidized bed reactor for the production of silicon |
| US4033286A (en) * | 1976-07-12 | 1977-07-05 | California Institute Of Technology | Chemical vapor deposition reactor |
| US4309241A (en) * | 1980-07-28 | 1982-01-05 | Monsanto Company | Gas curtain continuous chemical vapor deposition production of semiconductor bodies |
-
1980
- 1980-07-28 US US06/172,509 patent/US4444812A/en not_active Expired - Lifetime
-
1981
- 1981-07-24 EP EP81303400A patent/EP0045599B1/en not_active Expired
- 1981-07-24 DE DE8181303400T patent/DE3169538D1/de not_active Expired
- 1981-07-25 KR KR1019810002705A patent/KR850001943B1/ko active
- 1981-07-27 JP JP56117564A patent/JPS5751112A/ja active Pending
- 1981-07-27 CA CA000382629A patent/CA1178179A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| KR850001943B1 (ko) | 1985-12-31 |
| US4444812A (en) | 1984-04-24 |
| DE3169538D1 (en) | 1985-05-02 |
| EP0045599B1 (en) | 1985-03-27 |
| EP0045599A1 (en) | 1982-02-10 |
| JPS5751112A (en) | 1982-03-25 |
| CA1178179A (en) | 1984-11-20 |
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