DE3169538D1 - Process and apparatus for the production of silicon bodies by continuous chemical vapor deposition - Google Patents
Process and apparatus for the production of silicon bodies by continuous chemical vapor depositionInfo
- Publication number
- DE3169538D1 DE3169538D1 DE8181303400T DE3169538T DE3169538D1 DE 3169538 D1 DE3169538 D1 DE 3169538D1 DE 8181303400 T DE8181303400 T DE 8181303400T DE 3169538 T DE3169538 T DE 3169538T DE 3169538 D1 DE3169538 D1 DE 3169538D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- vapor deposition
- chemical vapor
- continuous chemical
- silicon bodies
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/025—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/906—Special atmosphere other than vacuum or inert
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/172,509 US4444812A (en) | 1980-07-28 | 1980-07-28 | Combination gas curtains for continuous chemical vapor deposition production of silicon bodies |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3169538D1 true DE3169538D1 (en) | 1985-05-02 |
Family
ID=22628005
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8181303400T Expired DE3169538D1 (en) | 1980-07-28 | 1981-07-24 | Process and apparatus for the production of silicon bodies by continuous chemical vapor deposition |
Country Status (6)
Country | Link |
---|---|
US (1) | US4444812A (de) |
EP (1) | EP0045599B1 (de) |
JP (1) | JPS5751112A (de) |
KR (1) | KR850001943B1 (de) |
CA (1) | CA1178179A (de) |
DE (1) | DE3169538D1 (de) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4530750A (en) * | 1981-03-20 | 1985-07-23 | A. S. Laboratories, Inc. | Apparatus for coating optical fibers |
JPS59501359A (ja) * | 1982-07-12 | 1984-08-02 | ジエイ・シ−・シユメイカ−・カンパニ− | 超高純度のエピタキシアル・シリコン |
US5246536A (en) * | 1986-09-08 | 1993-09-21 | Research Development Corporation Of Japan | Method for growing single crystal thin films of element semiconductor |
US5171609A (en) * | 1990-12-04 | 1992-12-15 | Fusion Systems Corp. | Fiber curing with fluid flow |
US5614257A (en) * | 1991-08-09 | 1997-03-25 | Applied Materials, Inc | Low temperature, high pressure silicon deposition method |
JP3121131B2 (ja) * | 1991-08-09 | 2000-12-25 | アプライド マテリアルズ インコーポレイテッド | 低温高圧のシリコン蒸着方法 |
US5358603A (en) * | 1992-10-06 | 1994-10-25 | Albemarle Corporation | Process for the removal of a silicon coating from a surface |
SE9603586D0 (sv) * | 1996-10-01 | 1996-10-01 | Abb Research Ltd | A device for epitaxially growing objects and method for such a growth |
SE9603587D0 (sv) * | 1996-10-01 | 1996-10-01 | Abb Research Ltd | A device for epitaxially growing objects and method for such a growth |
US5904768A (en) * | 1996-10-15 | 1999-05-18 | Memc Electronic Materials, Inc. | Process for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic |
KR100210261B1 (ko) * | 1997-03-13 | 1999-07-15 | 이서봉 | 발열반응을 이용한 다결정 실리콘의 제조 방법 |
JP3529989B2 (ja) * | 1997-09-12 | 2004-05-24 | 株式会社東芝 | 成膜方法及び半導体装置の製造方法 |
US6794308B2 (en) | 1998-01-07 | 2004-09-21 | Texas Instruments Incorporated | Method for reducing by-product deposition in wafer processing equipment |
US6730613B1 (en) * | 1998-01-07 | 2004-05-04 | Texas Instruments Incorporated | Method for reducing by-product deposition in wafer processing equipment |
JP2002505532A (ja) * | 1998-03-06 | 2002-02-19 | エーエスエム アメリカ インコーポレイテッド | 高段差被覆性を伴うシリコン堆積方法 |
KR101027485B1 (ko) * | 2001-02-12 | 2011-04-06 | 에이에스엠 아메리카, 인코포레이티드 | 반도체 박막 증착을 위한 개선된 공정 |
US7026219B2 (en) | 2001-02-12 | 2006-04-11 | Asm America, Inc. | Integration of high k gate dielectric |
US7378127B2 (en) * | 2001-03-13 | 2008-05-27 | Micron Technology, Inc. | Chemical vapor deposition methods |
US7229666B2 (en) * | 2002-01-22 | 2007-06-12 | Micron Technology, Inc. | Chemical vapor deposition method |
US6787185B2 (en) * | 2002-02-25 | 2004-09-07 | Micron Technology, Inc. | Deposition methods for improved delivery of metastable species |
US7468104B2 (en) * | 2002-05-17 | 2008-12-23 | Micron Technology, Inc. | Chemical vapor deposition apparatus and deposition method |
US7186630B2 (en) * | 2002-08-14 | 2007-03-06 | Asm America, Inc. | Deposition of amorphous silicon-containing films |
US6887521B2 (en) * | 2002-08-15 | 2005-05-03 | Micron Technology, Inc. | Gas delivery system for pulsed-type deposition processes used in the manufacturing of micro-devices |
DE102004038717A1 (de) * | 2004-08-10 | 2006-02-23 | Joint Solar Silicon Gmbh & Co. Kg | Herstellungsverfahren für Reaktor zur Zersetzung von Gasen |
US7615061B2 (en) * | 2006-02-28 | 2009-11-10 | Arthrocare Corporation | Bone anchor suture-loading system, method and apparatus |
JP5509578B2 (ja) * | 2007-11-28 | 2014-06-04 | 三菱マテリアル株式会社 | 多結晶シリコン製造装置及び製造方法 |
KR20130049184A (ko) * | 2010-03-19 | 2013-05-13 | 지티에이티 코포레이션 | 다결정 실리콘 증착 시스템 및 방법 |
US9029809B2 (en) | 2012-11-30 | 2015-05-12 | Ultratech, Inc. | Movable microchamber system with gas curtain |
US9443730B2 (en) | 2014-07-18 | 2016-09-13 | Asm Ip Holding B.V. | Process for forming silicon-filled openings with a reduced occurrence of voids |
US9837271B2 (en) | 2014-07-18 | 2017-12-05 | Asm Ip Holding B.V. | Process for forming silicon-filled openings with a reduced occurrence of voids |
US10460932B2 (en) | 2017-03-31 | 2019-10-29 | Asm Ip Holding B.V. | Semiconductor device with amorphous silicon filled gaps and methods for forming |
EP3684967B1 (de) * | 2017-12-05 | 2022-03-02 | Wacker Chemie AG | Verfahren zur bestimmung einer oberflächentemperatur |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL218408A (de) * | 1954-05-18 | 1900-01-01 | ||
NL109287C (de) * | 1955-11-02 | |||
US3011877A (en) * | 1956-06-25 | 1961-12-05 | Siemens Ag | Production of high-purity semiconductor materials for electrical purposes |
GB903021A (en) * | 1959-07-17 | 1962-08-09 | Standard Telephones Cables Ltd | Improvements in or relating to the production of silicon |
CH428675A (de) * | 1960-03-02 | 1967-01-31 | Siemens Ag | Verfahren zur Gewinnung von reinstem Halbleitermaterial, insbesondere Silizium |
DE1216842B (de) * | 1960-09-30 | 1966-05-18 | Karl Ernst Hoffmann | Verfahren zur Herstellung von reinstem Silicium und Germanium |
GB1112140A (en) * | 1966-05-27 | 1968-05-01 | Dow Corning | A method and apparatus for the continuous production of semiconductor materials |
US3635683A (en) * | 1968-06-05 | 1972-01-18 | Texas Instruments Inc | Method of crystal growth by vapor deposition |
US3809571A (en) * | 1972-04-04 | 1974-05-07 | Union Carbide Corp | Process for making silicon metal |
US3900597A (en) * | 1973-12-19 | 1975-08-19 | Motorola Inc | System and process for deposition of polycrystalline silicon with silane in vacuum |
US3963838A (en) * | 1974-05-24 | 1976-06-15 | Texas Instruments Incorporated | Method of operating a quartz fluidized bed reactor for the production of silicon |
US4033286A (en) * | 1976-07-12 | 1977-07-05 | California Institute Of Technology | Chemical vapor deposition reactor |
US4309241A (en) * | 1980-07-28 | 1982-01-05 | Monsanto Company | Gas curtain continuous chemical vapor deposition production of semiconductor bodies |
-
1980
- 1980-07-28 US US06/172,509 patent/US4444812A/en not_active Expired - Lifetime
-
1981
- 1981-07-24 EP EP81303400A patent/EP0045599B1/de not_active Expired
- 1981-07-24 DE DE8181303400T patent/DE3169538D1/de not_active Expired
- 1981-07-25 KR KR1019810002705A patent/KR850001943B1/ko active
- 1981-07-27 JP JP56117564A patent/JPS5751112A/ja active Pending
- 1981-07-27 CA CA000382629A patent/CA1178179A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
KR850001943B1 (ko) | 1985-12-31 |
US4444812A (en) | 1984-04-24 |
KR830006819A (ko) | 1983-10-06 |
EP0045599B1 (de) | 1985-03-27 |
EP0045599A1 (de) | 1982-02-10 |
JPS5751112A (en) | 1982-03-25 |
CA1178179A (en) | 1984-11-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8328 | Change in the person/name/address of the agent |
Free format text: SCHWABE, H., DIPL.-ING. SANDMAIR, K., DIPL.-CHEM. DR.JUR. DR.RER.NAT., PAT.-ANW., 8000 MUENCHEN |
|
8339 | Ceased/non-payment of the annual fee |