DE3169538D1 - Process and apparatus for the production of silicon bodies by continuous chemical vapor deposition - Google Patents

Process and apparatus for the production of silicon bodies by continuous chemical vapor deposition

Info

Publication number
DE3169538D1
DE3169538D1 DE8181303400T DE3169538T DE3169538D1 DE 3169538 D1 DE3169538 D1 DE 3169538D1 DE 8181303400 T DE8181303400 T DE 8181303400T DE 3169538 T DE3169538 T DE 3169538T DE 3169538 D1 DE3169538 D1 DE 3169538D1
Authority
DE
Germany
Prior art keywords
production
vapor deposition
chemical vapor
continuous chemical
silicon bodies
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181303400T
Other languages
English (en)
Inventor
Henry William Gutsche
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Monsanto Co
Original Assignee
Monsanto Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Monsanto Co filed Critical Monsanto Co
Application granted granted Critical
Publication of DE3169538D1 publication Critical patent/DE3169538D1/de
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/18Epitaxial-layer growth characterised by the substrate
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon
    • C01B33/021Preparation
    • C01B33/027Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/025Continuous growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/10Heating of the reaction chamber or the substrate
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/14Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906Special atmosphere other than vacuum or inert

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
DE8181303400T 1980-07-28 1981-07-24 Process and apparatus for the production of silicon bodies by continuous chemical vapor deposition Expired DE3169538D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/172,509 US4444812A (en) 1980-07-28 1980-07-28 Combination gas curtains for continuous chemical vapor deposition production of silicon bodies

Publications (1)

Publication Number Publication Date
DE3169538D1 true DE3169538D1 (en) 1985-05-02

Family

ID=22628005

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181303400T Expired DE3169538D1 (en) 1980-07-28 1981-07-24 Process and apparatus for the production of silicon bodies by continuous chemical vapor deposition

Country Status (6)

Country Link
US (1) US4444812A (de)
EP (1) EP0045599B1 (de)
JP (1) JPS5751112A (de)
KR (1) KR850001943B1 (de)
CA (1) CA1178179A (de)
DE (1) DE3169538D1 (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4530750A (en) * 1981-03-20 1985-07-23 A. S. Laboratories, Inc. Apparatus for coating optical fibers
JPS59501359A (ja) * 1982-07-12 1984-08-02 ジエイ・シ−・シユメイカ−・カンパニ− 超高純度のエピタキシアル・シリコン
US5246536A (en) * 1986-09-08 1993-09-21 Research Development Corporation Of Japan Method for growing single crystal thin films of element semiconductor
US5171609A (en) * 1990-12-04 1992-12-15 Fusion Systems Corp. Fiber curing with fluid flow
US5614257A (en) * 1991-08-09 1997-03-25 Applied Materials, Inc Low temperature, high pressure silicon deposition method
JP3121131B2 (ja) * 1991-08-09 2000-12-25 アプライド マテリアルズ インコーポレイテッド 低温高圧のシリコン蒸着方法
US5358603A (en) * 1992-10-06 1994-10-25 Albemarle Corporation Process for the removal of a silicon coating from a surface
SE9603586D0 (sv) * 1996-10-01 1996-10-01 Abb Research Ltd A device for epitaxially growing objects and method for such a growth
SE9603587D0 (sv) * 1996-10-01 1996-10-01 Abb Research Ltd A device for epitaxially growing objects and method for such a growth
US5904768A (en) * 1996-10-15 1999-05-18 Memc Electronic Materials, Inc. Process for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic
KR100210261B1 (ko) * 1997-03-13 1999-07-15 이서봉 발열반응을 이용한 다결정 실리콘의 제조 방법
JP3529989B2 (ja) * 1997-09-12 2004-05-24 株式会社東芝 成膜方法及び半導体装置の製造方法
US6794308B2 (en) 1998-01-07 2004-09-21 Texas Instruments Incorporated Method for reducing by-product deposition in wafer processing equipment
US6730613B1 (en) * 1998-01-07 2004-05-04 Texas Instruments Incorporated Method for reducing by-product deposition in wafer processing equipment
JP2002505532A (ja) * 1998-03-06 2002-02-19 エーエスエム アメリカ インコーポレイテッド 高段差被覆性を伴うシリコン堆積方法
KR101027485B1 (ko) * 2001-02-12 2011-04-06 에이에스엠 아메리카, 인코포레이티드 반도체 박막 증착을 위한 개선된 공정
US7026219B2 (en) 2001-02-12 2006-04-11 Asm America, Inc. Integration of high k gate dielectric
US7378127B2 (en) * 2001-03-13 2008-05-27 Micron Technology, Inc. Chemical vapor deposition methods
US7229666B2 (en) * 2002-01-22 2007-06-12 Micron Technology, Inc. Chemical vapor deposition method
US6787185B2 (en) * 2002-02-25 2004-09-07 Micron Technology, Inc. Deposition methods for improved delivery of metastable species
US7468104B2 (en) * 2002-05-17 2008-12-23 Micron Technology, Inc. Chemical vapor deposition apparatus and deposition method
US7186630B2 (en) * 2002-08-14 2007-03-06 Asm America, Inc. Deposition of amorphous silicon-containing films
US6887521B2 (en) * 2002-08-15 2005-05-03 Micron Technology, Inc. Gas delivery system for pulsed-type deposition processes used in the manufacturing of micro-devices
DE102004038717A1 (de) * 2004-08-10 2006-02-23 Joint Solar Silicon Gmbh & Co. Kg Herstellungsverfahren für Reaktor zur Zersetzung von Gasen
US7615061B2 (en) * 2006-02-28 2009-11-10 Arthrocare Corporation Bone anchor suture-loading system, method and apparatus
JP5509578B2 (ja) * 2007-11-28 2014-06-04 三菱マテリアル株式会社 多結晶シリコン製造装置及び製造方法
KR20130049184A (ko) * 2010-03-19 2013-05-13 지티에이티 코포레이션 다결정 실리콘 증착 시스템 및 방법
US9029809B2 (en) 2012-11-30 2015-05-12 Ultratech, Inc. Movable microchamber system with gas curtain
US9443730B2 (en) 2014-07-18 2016-09-13 Asm Ip Holding B.V. Process for forming silicon-filled openings with a reduced occurrence of voids
US9837271B2 (en) 2014-07-18 2017-12-05 Asm Ip Holding B.V. Process for forming silicon-filled openings with a reduced occurrence of voids
US10460932B2 (en) 2017-03-31 2019-10-29 Asm Ip Holding B.V. Semiconductor device with amorphous silicon filled gaps and methods for forming
EP3684967B1 (de) * 2017-12-05 2022-03-02 Wacker Chemie AG Verfahren zur bestimmung einer oberflächentemperatur

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL218408A (de) * 1954-05-18 1900-01-01
NL109287C (de) * 1955-11-02
US3011877A (en) * 1956-06-25 1961-12-05 Siemens Ag Production of high-purity semiconductor materials for electrical purposes
GB903021A (en) * 1959-07-17 1962-08-09 Standard Telephones Cables Ltd Improvements in or relating to the production of silicon
CH428675A (de) * 1960-03-02 1967-01-31 Siemens Ag Verfahren zur Gewinnung von reinstem Halbleitermaterial, insbesondere Silizium
DE1216842B (de) * 1960-09-30 1966-05-18 Karl Ernst Hoffmann Verfahren zur Herstellung von reinstem Silicium und Germanium
GB1112140A (en) * 1966-05-27 1968-05-01 Dow Corning A method and apparatus for the continuous production of semiconductor materials
US3635683A (en) * 1968-06-05 1972-01-18 Texas Instruments Inc Method of crystal growth by vapor deposition
US3809571A (en) * 1972-04-04 1974-05-07 Union Carbide Corp Process for making silicon metal
US3900597A (en) * 1973-12-19 1975-08-19 Motorola Inc System and process for deposition of polycrystalline silicon with silane in vacuum
US3963838A (en) * 1974-05-24 1976-06-15 Texas Instruments Incorporated Method of operating a quartz fluidized bed reactor for the production of silicon
US4033286A (en) * 1976-07-12 1977-07-05 California Institute Of Technology Chemical vapor deposition reactor
US4309241A (en) * 1980-07-28 1982-01-05 Monsanto Company Gas curtain continuous chemical vapor deposition production of semiconductor bodies

Also Published As

Publication number Publication date
KR850001943B1 (ko) 1985-12-31
US4444812A (en) 1984-04-24
KR830006819A (ko) 1983-10-06
EP0045599B1 (de) 1985-03-27
EP0045599A1 (de) 1982-02-10
JPS5751112A (en) 1982-03-25
CA1178179A (en) 1984-11-20

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Legal Events

Date Code Title Description
8328 Change in the person/name/address of the agent

Free format text: SCHWABE, H., DIPL.-ING. SANDMAIR, K., DIPL.-CHEM. DR.JUR. DR.RER.NAT., PAT.-ANW., 8000 MUENCHEN

8339 Ceased/non-payment of the annual fee