GB1112140A - A method and apparatus for the continuous production of semiconductor materials - Google Patents

A method and apparatus for the continuous production of semiconductor materials

Info

Publication number
GB1112140A
GB1112140A GB372367A GB372367A GB1112140A GB 1112140 A GB1112140 A GB 1112140A GB 372367 A GB372367 A GB 372367A GB 372367 A GB372367 A GB 372367A GB 1112140 A GB1112140 A GB 1112140A
Authority
GB
United Kingdom
Prior art keywords
chamber
deposited
thin rod
silicon
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB372367A
Inventor
Edward Lane Kern
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Publication of GB1112140A publication Critical patent/GB1112140A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B41/00—Obtaining germanium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B59/00—Obtaining rare earth metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Geology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

<PICT:1112140/C6-C7/1> A thin rod of semi-conductor material is continuously passed through a chamber in which its diameter is progressively increased by pyrolytic deposition from a gas. The thin rod may be formed by pulling from a melt or by extrusion and may have a round or polygonol cross-section. Silicon is deposited from a mixture of trichlorosilane and hydrogen on to a silicon rod heated to about 1150 DEG C., germanium is deposited from germanium tetrachloride at about 750 DEG C. and silicon carbide is deposited at about 1300 DEG C. A thin rod 17 is pulled from a molten zone 16 through a chamber 22 wherein its cross-section is progressively increased by pyrolytic deposition. A radiant heater 23, or alternatively an induction heater, of upwardly increasing intensity is situated between chamber 22 and a quartz liner 29. Chamber 22 is provided with gas inlets 31 and 37, gas outlet 36 and baffles 32-34.ALSO:<PICT:1112140/C1/1> A thin rod of semi-conductor material is continuously passed through a chamber in which its diameter is progressively increased by pyrolytic deposition from a gas. The thin rod may be formed by pulling from a melt or by extrusion and may have a round or polygonal cross-section. Silicon is deposited from a mixture of trichlorosilane and hydrogen on to a silicon rod heated to about 1150 DEG C., germanium is deposited from germanium tetrachloride at about 50 DEG C. and silicon carbide is deposited at about 1300 DEG C. A thin rod 17 is pulled from a molten zone 16 through a chamber 22 wherein its cross-section is progressively increased by pyrolytic deposition. A radiant heater 23, or alternatively an induction heater, of upwardly increasing intensity is situated between chamber 22 and a quartz liner 29. Chamber 22 is provided with gas inlets 31 and 37, gas outlet 36 and baffles 32-34.
GB372367A 1966-05-27 1967-01-25 A method and apparatus for the continuous production of semiconductor materials Expired GB1112140A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US55335766A 1966-05-27 1966-05-27

Publications (1)

Publication Number Publication Date
GB1112140A true GB1112140A (en) 1968-05-01

Family

ID=24209104

Family Applications (1)

Application Number Title Priority Date Filing Date
GB372367A Expired GB1112140A (en) 1966-05-27 1967-01-25 A method and apparatus for the continuous production of semiconductor materials

Country Status (3)

Country Link
BE (1) BE699058A (en)
GB (1) GB1112140A (en)
NL (1) NL6703038A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0045192A2 (en) * 1980-07-28 1982-02-03 Monsanto Company Process and apparatus for preparing bodies of semiconductor material
EP0045191A1 (en) * 1980-07-28 1982-02-03 Monsanto Company Process and apparatus for the production of semiconductor bodies
EP0045600A1 (en) * 1980-07-28 1982-02-10 Monsanto Company Improved method for producing semiconductor grade silicon
EP0045599A1 (en) * 1980-07-28 1982-02-10 Monsanto Company Process and apparatus for the production of silicon bodies by continuous chemical vapor deposition
GB2155959A (en) * 1984-03-14 1985-10-02 Secr Defence Chemical vapour deposition

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0045192A2 (en) * 1980-07-28 1982-02-03 Monsanto Company Process and apparatus for preparing bodies of semiconductor material
EP0045191A1 (en) * 1980-07-28 1982-02-03 Monsanto Company Process and apparatus for the production of semiconductor bodies
EP0045192A3 (en) * 1980-07-28 1982-02-10 Monsanto Company Process and apparatus for preparing bodies of semiconductor material
EP0045600A1 (en) * 1980-07-28 1982-02-10 Monsanto Company Improved method for producing semiconductor grade silicon
EP0045599A1 (en) * 1980-07-28 1982-02-10 Monsanto Company Process and apparatus for the production of silicon bodies by continuous chemical vapor deposition
GB2155959A (en) * 1984-03-14 1985-10-02 Secr Defence Chemical vapour deposition

Also Published As

Publication number Publication date
BE699058A (en) 1967-11-27
NL6703038A (en) 1967-11-28

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