JPS6472911A - Method for synthesizing compound semiconductor - Google Patents

Method for synthesizing compound semiconductor

Info

Publication number
JPS6472911A
JPS6472911A JP22859187A JP22859187A JPS6472911A JP S6472911 A JPS6472911 A JP S6472911A JP 22859187 A JP22859187 A JP 22859187A JP 22859187 A JP22859187 A JP 22859187A JP S6472911 A JPS6472911 A JP S6472911A
Authority
JP
Japan
Prior art keywords
semiconductor
compd
liq
compound semiconductor
heated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22859187A
Other languages
Japanese (ja)
Inventor
Tomoki Inada
Yukio Sasaki
Masatomo Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP22859187A priority Critical patent/JPS6472911A/en
Publication of JPS6472911A publication Critical patent/JPS6472911A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To efficiently obtain the title high-purity compd. semiconductor by passing the gas of the first element between the elements constituting the compd. semiconductor through the liq. of an element having a purifying action, and then passing the gas through the liq. of the second element to cause a reaction. CONSTITUTION:The inside of a vessel 15 contg. the first element (e.g., P) having a high vapor pressure between the elements constituting the compd. semiconductor is separated into two layers by a porous material 18, the first element 14 is placed in the lower layer, and the third element 20 (e.g. In melt) capable of purifying the first element is placed in the upper layer. The first element 14 is heated by a heater 17, gasified, passed through the liq. of the third element 20 in the upper layer, purified, and then introduced into the second element 12 (e.g., In) heated at a high temp. and melted in a crucible 11 through an injection pipe 16. Consequently, the first element 14 reacts with the second element 12, and a compd. semiconductor (e.g., InP) is synthesized.
JP22859187A 1987-09-14 1987-09-14 Method for synthesizing compound semiconductor Pending JPS6472911A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22859187A JPS6472911A (en) 1987-09-14 1987-09-14 Method for synthesizing compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22859187A JPS6472911A (en) 1987-09-14 1987-09-14 Method for synthesizing compound semiconductor

Publications (1)

Publication Number Publication Date
JPS6472911A true JPS6472911A (en) 1989-03-17

Family

ID=16878760

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22859187A Pending JPS6472911A (en) 1987-09-14 1987-09-14 Method for synthesizing compound semiconductor

Country Status (1)

Country Link
JP (1) JPS6472911A (en)

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