KR20260008139A - 자성체 및 절연체의 2층막, 터널 자기 저항 소자, 및 자기 메모리 - Google Patents

자성체 및 절연체의 2층막, 터널 자기 저항 소자, 및 자기 메모리

Info

Publication number
KR20260008139A
KR20260008139A KR1020257041373A KR20257041373A KR20260008139A KR 20260008139 A KR20260008139 A KR 20260008139A KR 1020257041373 A KR1020257041373 A KR 1020257041373A KR 20257041373 A KR20257041373 A KR 20257041373A KR 20260008139 A KR20260008139 A KR 20260008139A
Authority
KR
South Korea
Prior art keywords
layer
insulator
sio
antiferromagnetic
layer film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257041373A
Other languages
English (en)
Korean (ko)
Inventor
유우타 토가
코우지 이누카이
타카시 코레츠네
타쿠야 노모토
료타로 아리타
카츠히로 타나카
스스무 미나미
사토루 나카츠지
Original Assignee
제이에스알 가부시키가이샤
고쿠리츠다이가쿠호징 도쿄다이가쿠
고쿠리츠 다이가쿠 호진 도호쿠 다이가쿠
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 제이에스알 가부시키가이샤, 고쿠리츠다이가쿠호징 도쿄다이가쿠, 고쿠리츠 다이가쿠 호진 도호쿠 다이가쿠 filed Critical 제이에스알 가부시키가이샤
Publication of KR20260008139A publication Critical patent/KR20260008139A/ko
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/40—Devices controlled by magnetic fields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
KR1020257041373A 2023-06-09 2024-06-06 자성체 및 절연체의 2층막, 터널 자기 저항 소자, 및 자기 메모리 Pending KR20260008139A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202363472069P 2023-06-09 2023-06-09
US63/472,069 2023-06-09
PCT/JP2024/020707 WO2024253160A1 (ja) 2023-06-09 2024-06-06 磁性体および絶縁体の二層膜，トンネル磁気抵抗素子，及び磁気メモリ

Publications (1)

Publication Number Publication Date
KR20260008139A true KR20260008139A (ko) 2026-01-15

Family

ID=93796084

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257041373A Pending KR20260008139A (ko) 2023-06-09 2024-06-06 자성체 및 절연체의 2층막, 터널 자기 저항 소자, 및 자기 메모리

Country Status (6)

Country Link
EP (1) EP4727321A1 (https=)
JP (1) JPWO2024253160A1 (https=)
KR (1) KR20260008139A (https=)
CN (1) CN121312307A (https=)
TW (1) TW202515349A (https=)
WO (1) WO2024253160A1 (https=)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022220251A1 (ja) 2021-04-12 2022-10-20 国立大学法人東京大学 磁気メモリ素子

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019149446A (ja) 2018-02-27 2019-09-05 Tdk株式会社 スピン流磁化回転素子、磁気抵抗効果素子及び磁気メモリ
US10804459B2 (en) * 2018-12-19 2020-10-13 Wisconsin Alumni Research Foundation Non-collinear antiferromagnets for high density and low power spintronics devices
WO2020166722A1 (ja) 2019-02-15 2020-08-20 国立大学法人東京大学 スピントロニクス素子及び磁気メモリ装置
JP7719445B2 (ja) * 2021-04-21 2025-08-06 国立大学法人東北大学 電子デバイス、その製造方法及びその使用方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022220251A1 (ja) 2021-04-12 2022-10-20 国立大学法人東京大学 磁気メモリ素子

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
H. Tsai, et al., "Electrical manipulation of a topological antiferromagnetic state," Nature, volume 580, pages 608-613(2020)
X. Chen, et al., "Octupole-driven magnetoresistance in an antiferromagnetic tunnel junction", Nature 613, 490(2023)

Also Published As

Publication number Publication date
WO2024253160A1 (ja) 2024-12-12
CN121312307A (zh) 2026-01-09
EP4727321A1 (en) 2026-04-15
TW202515349A (zh) 2025-04-01
JPWO2024253160A1 (https=) 2024-12-12

Similar Documents

Publication Publication Date Title
DE112012001395B4 (de) Signalverarbeitungsschaltung
JP6777093B2 (ja) スピン流磁化反転素子、磁気抵抗効果素子、および磁気メモリ
TWI524510B (zh) 用於金屬導電金屬氧化物（ｍｃｏｍ）記憶體元件的垂直交叉點嵌入式記憶體架構
US7778062B2 (en) Resistance change memory device
KR102363995B1 (ko) 반도체 장치 및 이의 제조 방법
CN109300495A (zh) 基于人工反铁磁自由层的磁性结构及sot-mram
US9153340B2 (en) Magnetic storage element, magnetic storage device, magnetic memory, and driving method
US9984745B2 (en) Spin electronic memory, information recording method and information reproducing method
CN110875422B (zh) 磁存储装置
Mohanty et al. Resolving the degradation pathways in high-voltage oxides for high-energy-density lithium-ion batteries; Alternation in chemistry, composition and crystal structures
JP2008310859A (ja) 情報記録再生装置
EP4294150A1 (en) Seed layer for enhancing tunnel magnetoresistance with perpendicularly magnetized heusler films
TWI404203B (zh) Information recording and reproducing device
KR20260008139A (ko) 자성체 및 절연체의 2층막, 터널 자기 저항 소자, 및 자기 메모리
WO2025057970A1 (ja) パルス電流駆動方法、パルス電流駆動構造体、電流駆動型メモリ、記憶装置、及び、メモリ制御回路
CN119677396A (zh) 一种基于Janus铁电材料的多铁隧道结、器件及方法
KR20240066057A (ko) 수직 자화 호이슬러 필름으로 터널 자기 저항을 향상시키기 위한 시드층
WO2007105284A1 (ja) 抵抗変化型記憶素子および抵抗変化型記憶素子の製造方法
WO2007102212A1 (ja) 抵抗変化型記憶素子の製造方法
US20260090282A1 (en) Memory device
Nayak Colossal Magnetoresistive Manganites
US20250024756A1 (en) Half metallic heusler multilayers with perpendicular magnetic anisotropy
KR102299928B1 (ko) 셀렉터 전극을 포함하는 메모리 소자 및 메모리 어레이
Natelson et al. Ion motion and electrochemistry in nanostructures
KR20260044841A (ko) 반강자성체 재료, 자성체 및 절연체의 이층막, 터널 자기 저항 소자, 및 자기 메모리

Legal Events

Date Code Title Description
D11 Substantive examination requested

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D11-EXM-PA0201 (AS PROVIDED BY THE NATIONAL OFFICE)

P11 Amendment of application requested

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

Q12 Application published

Free format text: ST27 STATUS EVENT CODE: A-1-1-Q10-Q12-NAP-PG1501 (AS PROVIDED BY THE NATIONAL OFFICE)

D13 Search requested

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D13-SRH-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000