JPWO2024253160A1 - - Google Patents

Info

Publication number
JPWO2024253160A1
JPWO2024253160A1 JP2025526143A JP2025526143A JPWO2024253160A1 JP WO2024253160 A1 JPWO2024253160 A1 JP WO2024253160A1 JP 2025526143 A JP2025526143 A JP 2025526143A JP 2025526143 A JP2025526143 A JP 2025526143A JP WO2024253160 A1 JPWO2024253160 A1 JP WO2024253160A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025526143A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2024253160A1 publication Critical patent/JPWO2024253160A1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00Galvanomagnetic devices
    • H10N50/10Magnetoresistive devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B61/00Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/40Devices controlled by magnetic fields
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00Galvanomagnetic devices
    • H10N50/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00Galvanomagnetic devices
    • H10N50/80Constructional details
    • H10N50/85Materials of the active region
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B61/00Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
JP2025526143A 2023-06-09 2024-06-06 Pending JPWO2024253160A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202363472069P 2023-06-09 2023-06-09
PCT/JP2024/020707 WO2024253160A1 (ja) 2023-06-09 2024-06-06 磁性体および絶縁体の二層膜,トンネル磁気抵抗素子,及び磁気メモリ

Publications (1)

Publication Number Publication Date
JPWO2024253160A1 true JPWO2024253160A1 (https=) 2024-12-12

Family

ID=93796084

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025526143A Pending JPWO2024253160A1 (https=) 2023-06-09 2024-06-06

Country Status (6)

Country Link
EP (1) EP4727321A1 (https=)
JP (1) JPWO2024253160A1 (https=)
KR (1) KR20260008139A (https=)
CN (1) CN121312307A (https=)
TW (1) TW202515349A (https=)
WO (1) WO2024253160A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019149446A (ja) 2018-02-27 2019-09-05 Tdk株式会社 スピン流磁化回転素子、磁気抵抗効果素子及び磁気メモリ
US10804459B2 (en) * 2018-12-19 2020-10-13 Wisconsin Alumni Research Foundation Non-collinear antiferromagnets for high density and low power spintronics devices
WO2020166722A1 (ja) 2019-02-15 2020-08-20 国立大学法人東京大学 スピントロニクス素子及び磁気メモリ装置
JP7710752B2 (ja) 2021-04-12 2025-07-22 国立大学法人 東京大学 磁気メモリ素子及びその作製方法
JP7719445B2 (ja) * 2021-04-21 2025-08-06 国立大学法人東北大学 電子デバイス、その製造方法及びその使用方法

Also Published As

Publication number Publication date
KR20260008139A (ko) 2026-01-15
WO2024253160A1 (ja) 2024-12-12
CN121312307A (zh) 2026-01-09
EP4727321A1 (en) 2026-04-15
TW202515349A (zh) 2025-04-01

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Legal Events

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