JPWO2025079734A1 - - Google Patents
Info
- Publication number
- JPWO2025079734A1 JPWO2025079734A1 JP2025522992A JP2025522992A JPWO2025079734A1 JP WO2025079734 A1 JPWO2025079734 A1 JP WO2025079734A1 JP 2025522992 A JP2025522992 A JP 2025522992A JP 2025522992 A JP2025522992 A JP 2025522992A JP WO2025079734 A1 JPWO2025079734 A1 JP WO2025079734A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023177351 | 2023-10-13 | ||
| JP2023177351 | 2023-10-13 | ||
| PCT/JP2024/036724 WO2025079734A1 (ja) | 2023-10-13 | 2024-10-15 | 磁気メモリ素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2025079734A1 true JPWO2025079734A1 (https=) | 2025-04-17 |
| JP7708488B1 JP7708488B1 (ja) | 2025-07-15 |
| JPWO2025079734A5 JPWO2025079734A5 (https=) | 2025-09-17 |
Family
ID=95395867
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025522992A Active JP7708488B1 (ja) | 2023-10-13 | 2024-10-15 | 磁気メモリ素子 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7708488B1 (https=) |
| WO (1) | WO2025079734A1 (https=) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009081215A (ja) * | 2007-09-25 | 2009-04-16 | Toshiba Corp | 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ |
| WO2017018391A1 (ja) * | 2015-07-24 | 2017-02-02 | 国立大学法人東京大学 | メモリ素子 |
| WO2020166722A1 (ja) * | 2019-02-15 | 2020-08-20 | 国立大学法人東京大学 | スピントロニクス素子及び磁気メモリ装置 |
| JP7710752B2 (ja) * | 2021-04-12 | 2025-07-22 | 国立大学法人 東京大学 | 磁気メモリ素子及びその作製方法 |
| JP7719445B2 (ja) * | 2021-04-21 | 2025-08-06 | 国立大学法人東北大学 | 電子デバイス、その製造方法及びその使用方法 |
-
2024
- 2024-10-15 WO PCT/JP2024/036724 patent/WO2025079734A1/ja active Pending
- 2024-10-15 JP JP2025522992A patent/JP7708488B1/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2025079734A1 (ja) | 2025-04-17 |
| JP7708488B1 (ja) | 2025-07-15 |
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