JPWO2025079734A5 - - Google Patents

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Publication number
JPWO2025079734A5
JPWO2025079734A5 JP2025522992A JP2025522992A JPWO2025079734A5 JP WO2025079734 A5 JPWO2025079734 A5 JP WO2025079734A5 JP 2025522992 A JP2025522992 A JP 2025522992A JP 2025522992 A JP2025522992 A JP 2025522992A JP WO2025079734 A5 JPWO2025079734 A5 JP WO2025079734A5
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JP
Japan
Prior art keywords
memory element
magnetic memory
layer
axis
antiferromagnetic material
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2025522992A
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English (en)
Japanese (ja)
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JPWO2025079734A1 (https=
JP7708488B1 (ja
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Priority claimed from PCT/JP2024/036724 external-priority patent/WO2025079734A1/ja
Publication of JPWO2025079734A1 publication Critical patent/JPWO2025079734A1/ja
Application granted granted Critical
Publication of JP7708488B1 publication Critical patent/JP7708488B1/ja
Publication of JPWO2025079734A5 publication Critical patent/JPWO2025079734A5/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2025522992A 2023-10-13 2024-10-15 磁気メモリ素子 Active JP7708488B1 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023177351 2023-10-13
JP2023177351 2023-10-13
PCT/JP2024/036724 WO2025079734A1 (ja) 2023-10-13 2024-10-15 磁気メモリ素子

Publications (3)

Publication Number Publication Date
JPWO2025079734A1 JPWO2025079734A1 (https=) 2025-04-17
JP7708488B1 JP7708488B1 (ja) 2025-07-15
JPWO2025079734A5 true JPWO2025079734A5 (https=) 2025-09-17

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ID=95395867

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025522992A Active JP7708488B1 (ja) 2023-10-13 2024-10-15 磁気メモリ素子

Country Status (2)

Country Link
JP (1) JP7708488B1 (https=)
WO (1) WO2025079734A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009081215A (ja) * 2007-09-25 2009-04-16 Toshiba Corp 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ
WO2017018391A1 (ja) * 2015-07-24 2017-02-02 国立大学法人東京大学 メモリ素子
WO2020166722A1 (ja) * 2019-02-15 2020-08-20 国立大学法人東京大学 スピントロニクス素子及び磁気メモリ装置
JP7710752B2 (ja) * 2021-04-12 2025-07-22 国立大学法人 東京大学 磁気メモリ素子及びその作製方法
JP7719445B2 (ja) * 2021-04-21 2025-08-06 国立大学法人東北大学 電子デバイス、その製造方法及びその使用方法

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