JP7708488B1 - 磁気メモリ素子 - Google Patents

磁気メモリ素子

Info

Publication number
JP7708488B1
JP7708488B1 JP2025522992A JP2025522992A JP7708488B1 JP 7708488 B1 JP7708488 B1 JP 7708488B1 JP 2025522992 A JP2025522992 A JP 2025522992A JP 2025522992 A JP2025522992 A JP 2025522992A JP 7708488 B1 JP7708488 B1 JP 7708488B1
Authority
JP
Japan
Prior art keywords
layer
memory element
magnetic
antiferromagnetic
magnetic memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2025522992A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2025079734A5 (https=
JPWO2025079734A1 (https=
Inventor
広之 大森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Topologic
Original Assignee
Topologic
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Topologic filed Critical Topologic
Publication of JPWO2025079734A1 publication Critical patent/JPWO2025079734A1/ja
Application granted granted Critical
Publication of JP7708488B1 publication Critical patent/JP7708488B1/ja
Publication of JPWO2025079734A5 publication Critical patent/JPWO2025079734A5/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
JP2025522992A 2023-10-13 2024-10-15 磁気メモリ素子 Active JP7708488B1 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023177351 2023-10-13
JP2023177351 2023-10-13
PCT/JP2024/036724 WO2025079734A1 (ja) 2023-10-13 2024-10-15 磁気メモリ素子

Publications (3)

Publication Number Publication Date
JPWO2025079734A1 JPWO2025079734A1 (https=) 2025-04-17
JP7708488B1 true JP7708488B1 (ja) 2025-07-15
JPWO2025079734A5 JPWO2025079734A5 (https=) 2025-09-17

Family

ID=95395867

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025522992A Active JP7708488B1 (ja) 2023-10-13 2024-10-15 磁気メモリ素子

Country Status (2)

Country Link
JP (1) JP7708488B1 (https=)
WO (1) WO2025079734A1 (https=)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009081215A (ja) * 2007-09-25 2009-04-16 Toshiba Corp 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ
WO2017018391A1 (ja) * 2015-07-24 2017-02-02 国立大学法人東京大学 メモリ素子
WO2020166722A1 (ja) * 2019-02-15 2020-08-20 国立大学法人東京大学 スピントロニクス素子及び磁気メモリ装置
WO2022220251A1 (ja) * 2021-04-12 2022-10-20 国立大学法人東京大学 磁気メモリ素子
JP2022166395A (ja) * 2021-04-21 2022-11-02 国立大学法人東北大学 電子デバイス、その製造方法及びその使用方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009081215A (ja) * 2007-09-25 2009-04-16 Toshiba Corp 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ
WO2017018391A1 (ja) * 2015-07-24 2017-02-02 国立大学法人東京大学 メモリ素子
WO2020166722A1 (ja) * 2019-02-15 2020-08-20 国立大学法人東京大学 スピントロニクス素子及び磁気メモリ装置
WO2022220251A1 (ja) * 2021-04-12 2022-10-20 国立大学法人東京大学 磁気メモリ素子
JP2022166395A (ja) * 2021-04-21 2022-11-02 国立大学法人東北大学 電子デバイス、その製造方法及びその使用方法

Also Published As

Publication number Publication date
WO2025079734A1 (ja) 2025-04-17
JPWO2025079734A1 (https=) 2025-04-17

Similar Documents

Publication Publication Date Title
US7573737B2 (en) High speed low power magnetic devices based on current induced spin-momentum transfer
CN103069564B (zh) 磁阻效应元件以及磁性随机存取存储器
TWI530945B (zh) Memory elements and memory devices
US10937955B2 (en) Memory element and memory device
JP6244617B2 (ja) 記憶素子、記憶装置、磁気ヘッド
US8742518B2 (en) Magnetic tunnel junction with free layer having exchange coupled magnetic elements
CN106887247B (zh) 信息存储元件和存储装置
JP5987613B2 (ja) 記憶素子、記憶装置、磁気ヘッド
JP5782715B2 (ja) 記憶素子及び記憶装置
CN102610270B (zh) 存储元件和存储器装置
JP2012244031A (ja) 記憶素子、記憶装置
JP7352930B2 (ja) 磁気素子、磁気メモリチップ、磁気記憶装置及び磁気素子の書き込み方法
CN108738371B (zh) 磁化反转元件、磁阻效应元件和存储设备
JP2013115413A (ja) 記憶素子、記憶装置
US20120287696A1 (en) Storage element and storage device
JP2012235015A (ja) 記憶素子及び記憶装置
JP6567272B2 (ja) 磁性多層スタック
WO2013080436A1 (ja) 記憶素子、記憶装置
JP2013115399A (ja) 記憶素子、記憶装置
JP2013115412A (ja) 記憶素子、記憶装置
JP2012054439A (ja) 記憶素子及び記憶装置
JP7708488B1 (ja) 磁気メモリ素子
JP7664631B2 (ja) 磁気抵抗素子を備える磁気記憶装置
WO2013080437A1 (ja) 記憶素子、記憶装置
WO2022087768A1 (zh) 磁性隧道结、磁阻式随机存取存储器和电子器件

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250425

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20250425

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20250425

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250527

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250616

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20250624

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20250626

R150 Certificate of patent or registration of utility model

Ref document number: 7708488

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150