TW202515349A - 磁性體及絕緣體的雙層膜、穿隧磁阻元件及磁記憶體 - Google Patents

磁性體及絕緣體的雙層膜、穿隧磁阻元件及磁記憶體 Download PDF

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Publication number
TW202515349A
TW202515349A TW113120533A TW113120533A TW202515349A TW 202515349 A TW202515349 A TW 202515349A TW 113120533 A TW113120533 A TW 113120533A TW 113120533 A TW113120533 A TW 113120533A TW 202515349 A TW202515349 A TW 202515349A
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TW
Taiwan
Prior art keywords
layer
insulator
sio
double
antiferromagnetic
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TW113120533A
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English (en)
Chinese (zh)
Inventor
栂裕太
犬飼晃司
中辻知
見波将
田中克大
有田亮太郎
野本拓也
是常隆
Original Assignee
日商Jsr 股份有限公司
國立大學法人東京大學
國立大學法人東北大學
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Publication of TW202515349A publication Critical patent/TW202515349A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/40—Devices controlled by magnetic fields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
TW113120533A 2023-06-09 2024-06-03 磁性體及絕緣體的雙層膜、穿隧磁阻元件及磁記憶體 TW202515349A (zh)

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US202363472069P 2023-06-09 2023-06-09
US63/472,069 2023-06-09

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TW202515349A true TW202515349A (zh) 2025-04-01

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TW113120533A TW202515349A (zh) 2023-06-09 2024-06-03 磁性體及絕緣體的雙層膜、穿隧磁阻元件及磁記憶體

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EP (1) EP4727321A1 (https=)
JP (1) JPWO2024253160A1 (https=)
KR (1) KR20260008139A (https=)
CN (1) CN121312307A (https=)
TW (1) TW202515349A (https=)
WO (1) WO2024253160A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019149446A (ja) 2018-02-27 2019-09-05 Tdk株式会社 スピン流磁化回転素子、磁気抵抗効果素子及び磁気メモリ
US10804459B2 (en) * 2018-12-19 2020-10-13 Wisconsin Alumni Research Foundation Non-collinear antiferromagnets for high density and low power spintronics devices
WO2020166722A1 (ja) 2019-02-15 2020-08-20 国立大学法人東京大学 スピントロニクス素子及び磁気メモリ装置
JP7710752B2 (ja) 2021-04-12 2025-07-22 国立大学法人 東京大学 磁気メモリ素子及びその作製方法
JP7719445B2 (ja) * 2021-04-21 2025-08-06 国立大学法人東北大学 電子デバイス、その製造方法及びその使用方法

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KR20260008139A (ko) 2026-01-15
WO2024253160A1 (ja) 2024-12-12
CN121312307A (zh) 2026-01-09
EP4727321A1 (en) 2026-04-15
JPWO2024253160A1 (https=) 2024-12-12

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