KR20240056760A - 반도체 장치, 기억 장치 - Google Patents

반도체 장치, 기억 장치 Download PDF

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Publication number
KR20240056760A
KR20240056760A KR1020247012305A KR20247012305A KR20240056760A KR 20240056760 A KR20240056760 A KR 20240056760A KR 1020247012305 A KR1020247012305 A KR 1020247012305A KR 20247012305 A KR20247012305 A KR 20247012305A KR 20240056760 A KR20240056760 A KR 20240056760A
Authority
KR
South Korea
Prior art keywords
conductor
insulator
oxide
additionally
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247012305A
Other languages
English (en)
Korean (ko)
Inventor
히데카즈 미야이리
모토키 나카시마
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20240056760A publication Critical patent/KR20240056760A/ko
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H01L29/7869—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/50—Peripheral circuit region structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/036—Making the capacitor or connections thereto the capacitor extending under the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/33—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor extending under the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
KR1020247012305A 2021-09-17 2022-09-02 반도체 장치, 기억 장치 Pending KR20240056760A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021151971 2021-09-17
JPJP-P-2021-151971 2021-09-17
PCT/IB2022/058239 WO2023042022A1 (ja) 2021-09-17 2022-09-02 半導体装置、記憶装置

Publications (1)

Publication Number Publication Date
KR20240056760A true KR20240056760A (ko) 2024-04-30

Family

ID=85602489

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247012305A Pending KR20240056760A (ko) 2021-09-17 2022-09-02 반도체 장치, 기억 장치

Country Status (8)

Country Link
US (1) US20240298435A1 (https=)
EP (1) EP4404275A4 (https=)
JP (1) JPWO2023042022A1 (https=)
KR (1) KR20240056760A (https=)
CN (1) CN117941078A (https=)
DE (1) DE112022004444T5 (https=)
TW (1) TW202320239A (https=)
WO (1) WO2023042022A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024025325A (ja) * 2022-08-12 2024-02-26 キオクシア株式会社 半導体装置
WO2024252246A1 (ja) * 2023-06-09 2024-12-12 株式会社半導体エネルギー研究所 半導体装置、半導体装置の作製方法
WO2025163448A1 (ja) * 2024-01-31 2025-08-07 株式会社半導体エネルギー研究所 半導体装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021108331A (ja) 2019-12-27 2021-07-29 キオクシア株式会社 半導体記憶装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG165252A1 (en) * 2009-03-25 2010-10-28 Unisantis Electronics Jp Ltd Semiconductor device and production method therefor
TWI435448B (zh) * 2010-12-22 2014-04-21 Chunghwa Picture Tubes Ltd 垂直式電晶體結構
WO2012121265A1 (en) * 2011-03-10 2012-09-13 Semiconductor Energy Laboratory Co., Ltd. Memory device and method for manufacturing the same
JP2015026782A (ja) * 2013-07-29 2015-02-05 マイクロン テクノロジー， インク． 半導体装置及びその製造方法
JP6509514B2 (ja) * 2014-09-17 2019-05-08 東芝メモリ株式会社 不揮発性半導体記憶装置及びその製造方法
JP7109928B2 (ja) * 2018-01-31 2022-08-01 キオクシア株式会社 トランジスタ及び半導体記憶装置並びにトランジスタの製造方法
CN112005350A (zh) * 2018-04-27 2020-11-27 株式会社半导体能源研究所 半导体装置
JP2021114563A (ja) * 2020-01-20 2021-08-05 キオクシア株式会社 半導体記憶装置
US12089412B2 (en) * 2020-03-26 2024-09-10 Intel NDTM US LLC Vertical string driver with extended gate junction structure

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021108331A (ja) 2019-12-27 2021-07-29 キオクシア株式会社 半導体記憶装置

Also Published As

Publication number Publication date
EP4404275A4 (en) 2025-09-17
WO2023042022A1 (ja) 2023-03-23
TW202320239A (zh) 2023-05-16
JPWO2023042022A1 (https=) 2023-03-23
CN117941078A (zh) 2024-04-26
EP4404275A1 (en) 2024-07-24
US20240298435A1 (en) 2024-09-05
DE112022004444T5 (de) 2024-07-25

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