CN117941078A - 半导体装置、存储装置 - Google Patents

半导体装置、存储装置 Download PDF

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Publication number
CN117941078A
CN117941078A CN202280059623.9A CN202280059623A CN117941078A CN 117941078 A CN117941078 A CN 117941078A CN 202280059623 A CN202280059623 A CN 202280059623A CN 117941078 A CN117941078 A CN 117941078A
Authority
CN
China
Prior art keywords
conductor
insulator
oxide
transistor
addition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280059623.9A
Other languages
English (en)
Chinese (zh)
Inventor
宫入秀和
中岛基
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN117941078A publication Critical patent/CN117941078A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/50—Peripheral circuit region structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/036—Making the capacitor or connections thereto the capacitor extending under the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/33—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor extending under the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
CN202280059623.9A 2021-09-17 2022-09-02 半导体装置、存储装置 Pending CN117941078A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021151971 2021-09-17
JP2021-151971 2021-09-17
PCT/IB2022/058239 WO2023042022A1 (ja) 2021-09-17 2022-09-02 半導体装置、記憶装置

Publications (1)

Publication Number Publication Date
CN117941078A true CN117941078A (zh) 2024-04-26

Family

ID=85602489

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280059623.9A Pending CN117941078A (zh) 2021-09-17 2022-09-02 半导体装置、存储装置

Country Status (8)

Country Link
US (1) US20240298435A1 (https=)
EP (1) EP4404275A4 (https=)
JP (1) JPWO2023042022A1 (https=)
KR (1) KR20240056760A (https=)
CN (1) CN117941078A (https=)
DE (1) DE112022004444T5 (https=)
TW (1) TW202320239A (https=)
WO (1) WO2023042022A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024025325A (ja) * 2022-08-12 2024-02-26 キオクシア株式会社 半導体装置
WO2024252246A1 (ja) * 2023-06-09 2024-12-12 株式会社半導体エネルギー研究所 半導体装置、半導体装置の作製方法
WO2025163448A1 (ja) * 2024-01-31 2025-08-07 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG165252A1 (en) * 2009-03-25 2010-10-28 Unisantis Electronics Jp Ltd Semiconductor device and production method therefor
TWI435448B (zh) * 2010-12-22 2014-04-21 Chunghwa Picture Tubes Ltd 垂直式電晶體結構
WO2012121265A1 (en) * 2011-03-10 2012-09-13 Semiconductor Energy Laboratory Co., Ltd. Memory device and method for manufacturing the same
JP2015026782A (ja) * 2013-07-29 2015-02-05 マイクロン テクノロジー， インク． 半導体装置及びその製造方法
JP6509514B2 (ja) * 2014-09-17 2019-05-08 東芝メモリ株式会社 不揮発性半導体記憶装置及びその製造方法
JP7109928B2 (ja) * 2018-01-31 2022-08-01 キオクシア株式会社 トランジスタ及び半導体記憶装置並びにトランジスタの製造方法
CN112005350A (zh) * 2018-04-27 2020-11-27 株式会社半导体能源研究所 半导体装置
JP2021108331A (ja) 2019-12-27 2021-07-29 キオクシア株式会社 半導体記憶装置
JP2021114563A (ja) * 2020-01-20 2021-08-05 キオクシア株式会社 半導体記憶装置
US12089412B2 (en) * 2020-03-26 2024-09-10 Intel NDTM US LLC Vertical string driver with extended gate junction structure

Also Published As

Publication number Publication date
EP4404275A4 (en) 2025-09-17
WO2023042022A1 (ja) 2023-03-23
TW202320239A (zh) 2023-05-16
KR20240056760A (ko) 2024-04-30
JPWO2023042022A1 (https=) 2023-03-23
EP4404275A1 (en) 2024-07-24
US20240298435A1 (en) 2024-09-05
DE112022004444T5 (de) 2024-07-25

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