TW202320239A - 半導體裝置、記憶體裝置 - Google Patents

半導體裝置、記憶體裝置 Download PDF

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Publication number
TW202320239A
TW202320239A TW111134109A TW111134109A TW202320239A TW 202320239 A TW202320239 A TW 202320239A TW 111134109 A TW111134109 A TW 111134109A TW 111134109 A TW111134109 A TW 111134109A TW 202320239 A TW202320239 A TW 202320239A
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TW
Taiwan
Prior art keywords
conductor
insulator
oxide
transistor
addition
Prior art date
Application number
TW111134109A
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English (en)
Chinese (zh)
Inventor
宮入秀和
中島基
Original Assignee
日商半導體能源研究所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商半導體能源研究所股份有限公司 filed Critical 日商半導體能源研究所股份有限公司
Publication of TW202320239A publication Critical patent/TW202320239A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/50—Peripheral circuit region structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/036—Making the capacitor or connections thereto the capacitor extending under the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/33—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor extending under the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
TW111134109A 2021-09-17 2022-09-08 半導體裝置、記憶體裝置 TW202320239A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021151971 2021-09-17
JP2021-151971 2021-09-17

Publications (1)

Publication Number Publication Date
TW202320239A true TW202320239A (zh) 2023-05-16

Family

ID=85602489

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111134109A TW202320239A (zh) 2021-09-17 2022-09-08 半導體裝置、記憶體裝置

Country Status (8)

Country Link
US (1) US20240298435A1 (https=)
EP (1) EP4404275A4 (https=)
JP (1) JPWO2023042022A1 (https=)
KR (1) KR20240056760A (https=)
CN (1) CN117941078A (https=)
DE (1) DE112022004444T5 (https=)
TW (1) TW202320239A (https=)
WO (1) WO2023042022A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024025325A (ja) * 2022-08-12 2024-02-26 キオクシア株式会社 半導体装置
WO2024252246A1 (ja) * 2023-06-09 2024-12-12 株式会社半導体エネルギー研究所 半導体装置、半導体装置の作製方法
WO2025163448A1 (ja) * 2024-01-31 2025-08-07 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG165252A1 (en) * 2009-03-25 2010-10-28 Unisantis Electronics Jp Ltd Semiconductor device and production method therefor
TWI435448B (zh) * 2010-12-22 2014-04-21 Chunghwa Picture Tubes Ltd 垂直式電晶體結構
WO2012121265A1 (en) * 2011-03-10 2012-09-13 Semiconductor Energy Laboratory Co., Ltd. Memory device and method for manufacturing the same
JP2015026782A (ja) * 2013-07-29 2015-02-05 マイクロン テクノロジー， インク． 半導体装置及びその製造方法
JP6509514B2 (ja) * 2014-09-17 2019-05-08 東芝メモリ株式会社 不揮発性半導体記憶装置及びその製造方法
JP7109928B2 (ja) * 2018-01-31 2022-08-01 キオクシア株式会社 トランジスタ及び半導体記憶装置並びにトランジスタの製造方法
CN112005350A (zh) * 2018-04-27 2020-11-27 株式会社半导体能源研究所 半导体装置
JP2021108331A (ja) 2019-12-27 2021-07-29 キオクシア株式会社 半導体記憶装置
JP2021114563A (ja) * 2020-01-20 2021-08-05 キオクシア株式会社 半導体記憶装置
US12089412B2 (en) * 2020-03-26 2024-09-10 Intel NDTM US LLC Vertical string driver with extended gate junction structure

Also Published As

Publication number Publication date
EP4404275A4 (en) 2025-09-17
WO2023042022A1 (ja) 2023-03-23
KR20240056760A (ko) 2024-04-30
JPWO2023042022A1 (https=) 2023-03-23
CN117941078A (zh) 2024-04-26
EP4404275A1 (en) 2024-07-24
US20240298435A1 (en) 2024-09-05
DE112022004444T5 (de) 2024-07-25

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