JPWO2023042022A1 - - Google Patents
Info
- Publication number
- JPWO2023042022A1 JPWO2023042022A1 JP2023547933A JP2023547933A JPWO2023042022A1 JP WO2023042022 A1 JPWO2023042022 A1 JP WO2023042022A1 JP 2023547933 A JP2023547933 A JP 2023547933A JP 2023547933 A JP2023547933 A JP 2023547933A JP WO2023042022 A1 JPWO2023042022 A1 JP WO2023042022A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/50—Peripheral circuit region structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
- H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
- H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/036—Making the capacitor or connections thereto the capacitor extending under the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/33—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor extending under the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6728—Vertical TFTs
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021151971 | 2021-09-17 | ||
| PCT/IB2022/058239 WO2023042022A1 (ja) | 2021-09-17 | 2022-09-02 | 半導体装置、記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023042022A1 true JPWO2023042022A1 (https=) | 2023-03-23 |
| JPWO2023042022A5 JPWO2023042022A5 (https=) | 2025-09-09 |
Family
ID=85602489
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023547933A Pending JPWO2023042022A1 (https=) | 2021-09-17 | 2022-09-02 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20240298435A1 (https=) |
| EP (1) | EP4404275A4 (https=) |
| JP (1) | JPWO2023042022A1 (https=) |
| KR (1) | KR20240056760A (https=) |
| CN (1) | CN117941078A (https=) |
| DE (1) | DE112022004444T5 (https=) |
| TW (1) | TW202320239A (https=) |
| WO (1) | WO2023042022A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2024025325A (ja) * | 2022-08-12 | 2024-02-26 | キオクシア株式会社 | 半導体装置 |
| WO2024252246A1 (ja) * | 2023-06-09 | 2024-12-12 | 株式会社半導体エネルギー研究所 | 半導体装置、半導体装置の作製方法 |
| WO2025163448A1 (ja) * | 2024-01-31 | 2025-08-07 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG165252A1 (en) * | 2009-03-25 | 2010-10-28 | Unisantis Electronics Jp Ltd | Semiconductor device and production method therefor |
| TWI435448B (zh) * | 2010-12-22 | 2014-04-21 | Chunghwa Picture Tubes Ltd | 垂直式電晶體結構 |
| WO2012121265A1 (en) * | 2011-03-10 | 2012-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and method for manufacturing the same |
| JP2015026782A (ja) * | 2013-07-29 | 2015-02-05 | マイクロン テクノロジー， インク． | 半導体装置及びその製造方法 |
| JP6509514B2 (ja) * | 2014-09-17 | 2019-05-08 | 東芝メモリ株式会社 | 不揮発性半導体記憶装置及びその製造方法 |
| JP7109928B2 (ja) * | 2018-01-31 | 2022-08-01 | キオクシア株式会社 | トランジスタ及び半導体記憶装置並びにトランジスタの製造方法 |
| CN112005350A (zh) * | 2018-04-27 | 2020-11-27 | 株式会社半导体能源研究所 | 半导体装置 |
| JP2021108331A (ja) | 2019-12-27 | 2021-07-29 | キオクシア株式会社 | 半導体記憶装置 |
| JP2021114563A (ja) * | 2020-01-20 | 2021-08-05 | キオクシア株式会社 | 半導体記憶装置 |
| US12089412B2 (en) * | 2020-03-26 | 2024-09-10 | Intel NDTM US LLC | Vertical string driver with extended gate junction structure |
-
2022
- 2022-09-02 US US18/689,964 patent/US20240298435A1/en active Pending
- 2022-09-02 WO PCT/IB2022/058239 patent/WO2023042022A1/ja not_active Ceased
- 2022-09-02 JP JP2023547933A patent/JPWO2023042022A1/ja active Pending
- 2022-09-02 KR KR1020247012305A patent/KR20240056760A/ko active Pending
- 2022-09-02 EP EP22869491.5A patent/EP4404275A4/en active Pending
- 2022-09-02 CN CN202280059623.9A patent/CN117941078A/zh active Pending
- 2022-09-02 DE DE112022004444.6T patent/DE112022004444T5/de active Pending
- 2022-09-08 TW TW111134109A patent/TW202320239A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| EP4404275A4 (en) | 2025-09-17 |
| WO2023042022A1 (ja) | 2023-03-23 |
| TW202320239A (zh) | 2023-05-16 |
| KR20240056760A (ko) | 2024-04-30 |
| CN117941078A (zh) | 2024-04-26 |
| EP4404275A1 (en) | 2024-07-24 |
| US20240298435A1 (en) | 2024-09-05 |
| DE112022004444T5 (de) | 2024-07-25 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20250901 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20250901 |