KR20240036598A - 펠리클막, 펠리클, 펠리클 부착 노광 원판, 노광 방법, 반도체의 제조 방법 및 액정 표시판의 제조 방법 - Google Patents
펠리클막, 펠리클, 펠리클 부착 노광 원판, 노광 방법, 반도체의 제조 방법 및 액정 표시판의 제조 방법 Download PDFInfo
- Publication number
- KR20240036598A KR20240036598A KR1020247004606A KR20247004606A KR20240036598A KR 20240036598 A KR20240036598 A KR 20240036598A KR 1020247004606 A KR1020247004606 A KR 1020247004606A KR 20247004606 A KR20247004606 A KR 20247004606A KR 20240036598 A KR20240036598 A KR 20240036598A
- Authority
- KR
- South Korea
- Prior art keywords
- pellicle
- film
- exposure
- bnnt
- euv
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
- C01B21/0648—After-treatment, e.g. grinding, purification
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
- C01P2004/13—Nanotubes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Inorganic Chemistry (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2021-124967 | 2021-07-30 | ||
| JP2021124967 | 2021-07-30 | ||
| PCT/JP2022/029162 WO2023008532A1 (ja) | 2021-07-30 | 2022-07-28 | ペリクル膜、ペリクル、ペリクル付き露光原版、露光方法、半導体の製造方法及び液晶表示板の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20240036598A true KR20240036598A (ko) | 2024-03-20 |
Family
ID=85086857
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020247004606A Pending KR20240036598A (ko) | 2021-07-30 | 2022-07-28 | 펠리클막, 펠리클, 펠리클 부착 노광 원판, 노광 방법, 반도체의 제조 방법 및 액정 표시판의 제조 방법 |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP4379464A4 (https=) |
| JP (1) | JP7652260B2 (https=) |
| KR (1) | KR20240036598A (https=) |
| CN (1) | CN117751325A (https=) |
| WO (1) | WO2023008532A1 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102701152B1 (ko) * | 2024-04-03 | 2024-09-02 | 주식회사 에프에스티 | Euv 펠리클용 질화붕소 나노튜브 멤브레인의 제조장치 및 질화붕소 나노튜브 멤브레인을 포함하는 euv 펠리클 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20230205073A1 (en) * | 2021-12-29 | 2023-06-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pellicle for euv lithography masks and methods of manufacturing thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010256434A (ja) | 2009-04-22 | 2010-11-11 | Shin-Etsu Chemical Co Ltd | リソグラフィ用ペリクルおよびその製造方法 |
| JP2018194838A (ja) | 2017-05-15 | 2018-12-06 | アイメック・ヴェーゼットウェーImec Vzw | ペリクルを形成する方法 |
| WO2019176410A1 (ja) | 2018-03-14 | 2019-09-19 | 株式会社カネカ | 炭素質膜を含むペリクル及び炭素質膜を含むペリクルの製造方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5099117B2 (ja) * | 2007-03-05 | 2012-12-12 | 帝人株式会社 | 窒化ホウ素系繊維紙の製造方法 |
| NL2017606A (en) * | 2015-10-22 | 2017-05-10 | Asml Netherlands Bv | A method of manufacturing a pellicle for a lithographic apparatus, a pellicle for a lithographic apparatus, a lithographic apparatus, a device manufacturing method, an apparatus for processing a pellicle, and a method for processing a pellicle |
| JP6478283B2 (ja) * | 2015-12-24 | 2019-03-06 | 信越化学工業株式会社 | Euv露光用ペリクル |
| KR102809564B1 (ko) * | 2016-07-05 | 2025-05-20 | 미쯔이가가꾸가부시끼가이샤 | 펠리클막, 펠리클 프레임체, 펠리클, 그 제조 방법, 노광 원판, 노광 장치, 반도체 장치의 제조 방법 |
| KR102310124B1 (ko) * | 2017-03-28 | 2021-10-08 | 삼성전자주식회사 | 극자외선 노광용 펠리클, 포토마스크 조립체 및 펠리클의 제조 방법 |
| NL2021084B1 (en) * | 2017-06-15 | 2019-03-27 | Asml Netherlands Bv | Pellicle and Pellicle Assembly |
| US11472931B2 (en) | 2017-07-05 | 2022-10-18 | National Research Council Of Canada | Methods for preparing superhydrophobic nano-microscale patterned films |
| US20200272047A1 (en) * | 2019-02-22 | 2020-08-27 | Applied Materials, Inc. | Method of forming cnt-bnnt nanocomposite pellicle |
| JP2020160345A (ja) * | 2019-03-27 | 2020-10-01 | 三井化学株式会社 | ペリクル自立膜の製造方法、ペリクルの製造方法、および半導体装置の製造方法 |
| KR102695013B1 (ko) * | 2019-04-24 | 2024-08-13 | 삼성전자주식회사 | 펠리클 조립체의 제조 방법 및 포토마스크 조립체의 제조 방법 |
| KR102463517B1 (ko) * | 2019-10-22 | 2022-11-09 | 주식회사 에스앤에스텍 | 질화붕소 나노튜브를 사용하는 극자외선 리소그래피용 펠리클 및 이의 제조방법 |
-
2022
- 2022-07-28 EP EP22849593.3A patent/EP4379464A4/en active Pending
- 2022-07-28 WO PCT/JP2022/029162 patent/WO2023008532A1/ja not_active Ceased
- 2022-07-28 KR KR1020247004606A patent/KR20240036598A/ko active Pending
- 2022-07-28 JP JP2023538624A patent/JP7652260B2/ja active Active
- 2022-07-28 CN CN202280050110.1A patent/CN117751325A/zh active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010256434A (ja) | 2009-04-22 | 2010-11-11 | Shin-Etsu Chemical Co Ltd | リソグラフィ用ペリクルおよびその製造方法 |
| JP2018194838A (ja) | 2017-05-15 | 2018-12-06 | アイメック・ヴェーゼットウェーImec Vzw | ペリクルを形成する方法 |
| WO2019176410A1 (ja) | 2018-03-14 | 2019-09-19 | 株式会社カネカ | 炭素質膜を含むペリクル及び炭素質膜を含むペリクルの製造方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102701152B1 (ko) * | 2024-04-03 | 2024-09-02 | 주식회사 에프에스티 | Euv 펠리클용 질화붕소 나노튜브 멤브레인의 제조장치 및 질화붕소 나노튜브 멤브레인을 포함하는 euv 펠리클 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202307556A (zh) | 2023-02-16 |
| EP4379464A4 (en) | 2025-10-29 |
| EP4379464A1 (en) | 2024-06-05 |
| JPWO2023008532A1 (https=) | 2023-02-02 |
| CN117751325A (zh) | 2024-03-22 |
| WO2023008532A1 (ja) | 2023-02-02 |
| JP7652260B2 (ja) | 2025-03-27 |
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| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
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| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
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| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
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| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
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| D11 | Substantive examination requested |
Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D11-EXM-PA0201 (AS PROVIDED BY THE NATIONAL OFFICE) |
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| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
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| D21 | Rejection of application intended |
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| PE0902 | Notice of grounds for rejection |
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| E13-X000 | Pre-grant limitation requested |
St.27 status event code: A-2-3-E10-E13-lim-X000 |
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| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |