CN117751325A - 防护薄膜、防护膜、带有防护膜的曝光原版、曝光方法、半导体的制造方法和液晶显示板的制造方法 - Google Patents

防护薄膜、防护膜、带有防护膜的曝光原版、曝光方法、半导体的制造方法和液晶显示板的制造方法 Download PDF

Info

Publication number
CN117751325A
CN117751325A CN202280050110.1A CN202280050110A CN117751325A CN 117751325 A CN117751325 A CN 117751325A CN 202280050110 A CN202280050110 A CN 202280050110A CN 117751325 A CN117751325 A CN 117751325A
Authority
CN
China
Prior art keywords
protective film
exposure
film
pellicle
film according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280050110.1A
Other languages
English (en)
Chinese (zh)
Inventor
西村晃范
白崎享
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Publication of CN117751325A publication Critical patent/CN117751325A/zh
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00Nitrogen; Compounds thereof
    • C01B21/06Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/064Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
    • C01B21/0648After-treatment, e.g. grinding, purification
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983Optical system protection, e.g. pellicles or removable covers for protection of mask
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/10Particle morphology extending in one dimension, e.g. needle-like
    • C01P2004/13Nanotubes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Inorganic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
CN202280050110.1A 2021-07-30 2022-07-28 防护薄膜、防护膜、带有防护膜的曝光原版、曝光方法、半导体的制造方法和液晶显示板的制造方法 Pending CN117751325A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-124967 2021-07-30
JP2021124967 2021-07-30
PCT/JP2022/029162 WO2023008532A1 (ja) 2021-07-30 2022-07-28 ペリクル膜、ペリクル、ペリクル付き露光原版、露光方法、半導体の製造方法及び液晶表示板の製造方法

Publications (1)

Publication Number Publication Date
CN117751325A true CN117751325A (zh) 2024-03-22

Family

ID=85086857

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280050110.1A Pending CN117751325A (zh) 2021-07-30 2022-07-28 防护薄膜、防护膜、带有防护膜的曝光原版、曝光方法、半导体的制造方法和液晶显示板的制造方法

Country Status (5)

Country Link
EP (1) EP4379464A4 (https=)
JP (1) JP7652260B2 (https=)
KR (1) KR20240036598A (https=)
CN (1) CN117751325A (https=)
WO (1) WO2023008532A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230205073A1 (en) * 2021-12-29 2023-06-29 Taiwan Semiconductor Manufacturing Company, Ltd. Pellicle for euv lithography masks and methods of manufacturing thereof
KR102701152B1 (ko) * 2024-04-03 2024-09-02 주식회사 에프에스티 Euv 펠리클용 질화붕소 나노튜브 멤브레인의 제조장치 및 질화붕소 나노튜브 멤브레인을 포함하는 euv 펠리클

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5099117B2 (ja) * 2007-03-05 2012-12-12 帝人株式会社 窒化ホウ素系繊維紙の製造方法
JP5394808B2 (ja) 2009-04-22 2014-01-22 信越化学工業株式会社 リソグラフィ用ペリクルおよびその製造方法
NL2017606A (en) * 2015-10-22 2017-05-10 Asml Netherlands Bv A method of manufacturing a pellicle for a lithographic apparatus, a pellicle for a lithographic apparatus, a lithographic apparatus, a device manufacturing method, an apparatus for processing a pellicle, and a method for processing a pellicle
JP6478283B2 (ja) * 2015-12-24 2019-03-06 信越化学工業株式会社 Euv露光用ペリクル
KR102809564B1 (ko) * 2016-07-05 2025-05-20 미쯔이가가꾸가부시끼가이샤 펠리클막, 펠리클 프레임체, 펠리클, 그 제조 방법, 노광 원판, 노광 장치, 반도체 장치의 제조 방법
KR102310124B1 (ko) * 2017-03-28 2021-10-08 삼성전자주식회사 극자외선 노광용 펠리클, 포토마스크 조립체 및 펠리클의 제조 방법
EP3404486B1 (en) 2017-05-15 2021-07-14 IMEC vzw A method for forming a pellicle
NL2021084B1 (en) * 2017-06-15 2019-03-27 Asml Netherlands Bv Pellicle and Pellicle Assembly
US11472931B2 (en) 2017-07-05 2022-10-18 National Research Council Of Canada Methods for preparing superhydrophobic nano-microscale patterned films
JP2021076620A (ja) 2018-03-14 2021-05-20 株式会社カネカ 炭素質膜を含むペリクル及び炭素質膜を含むペリクルの製造方法
US20200272047A1 (en) * 2019-02-22 2020-08-27 Applied Materials, Inc. Method of forming cnt-bnnt nanocomposite pellicle
JP2020160345A (ja) * 2019-03-27 2020-10-01 三井化学株式会社 ペリクル自立膜の製造方法、ペリクルの製造方法、および半導体装置の製造方法
KR102695013B1 (ko) * 2019-04-24 2024-08-13 삼성전자주식회사 펠리클 조립체의 제조 방법 및 포토마스크 조립체의 제조 방법
KR102463517B1 (ko) * 2019-10-22 2022-11-09 주식회사 에스앤에스텍 질화붕소 나노튜브를 사용하는 극자외선 리소그래피용 펠리클 및 이의 제조방법

Also Published As

Publication number Publication date
TW202307556A (zh) 2023-02-16
EP4379464A4 (en) 2025-10-29
EP4379464A1 (en) 2024-06-05
KR20240036598A (ko) 2024-03-20
JPWO2023008532A1 (https=) 2023-02-02
WO2023008532A1 (ja) 2023-02-02
JP7652260B2 (ja) 2025-03-27

Similar Documents

Publication Publication Date Title
US11042085B2 (en) Pellicle film, pellicle frame, pellicle, method for producing same, original plate for light exposure, light exposure apparatus and method for manufacturing semiconductor device
KR102310124B1 (ko) 극자외선 노광용 펠리클, 포토마스크 조립체 및 펠리클의 제조 방법
US10684560B2 (en) Pellicle for photomask, reticle including the same, and exposure apparatus for lithography
TWI862213B (zh) 用於euv微影蝕刻之超薄且超低密度的薄膜、含彼的光罩護膜、及其應用方法
JP7431288B2 (ja) 極端紫外線リソグラフィマスク用のマスクペリクル及びその製造方法
CN117751325A (zh) 防护薄膜、防护膜、带有防护膜的曝光原版、曝光方法、半导体的制造方法和液晶显示板的制造方法
CN111352295A (zh) Euv防尘薄膜张紧的诱导应力
WO2021172104A1 (ja) ペリクル膜、ペリクル、露光原版、露光装置、ペリクルの製造方法及び半導体装置の製造方法
CN1538238A (zh) 用于euv光刻的掩模版及其制作方法
CN111258178A (zh) 防尘薄膜组件及其制造方法
TW202338508A (zh) 用於euv微影之塗佈鋯的超薄且超低密度膜
CN115698851A (zh) 用于光刻设备的光学元件和表膜隔膜
CN115698852A (zh) 防护薄膜框架、防护薄膜、带防护薄膜的曝光原版、曝光方法、半导体的制造方法及液晶显示板的制造方法
US12287568B2 (en) Low-temperature direct growth method of multilayer graphene, pellicle for extreme ultraviolet lithography using the same, and method for manufacturing the pellicle
Lima et al. Ultra-low density, nanostructured free-standing films for EUV Pellicles
CN215416267U (zh) 防护薄膜框架及其组件、曝光原版、曝光系统及制造系统
TWI920356B (zh) 防護膜的製造方法
WO2022030499A1 (ja) ペリクル、露光原版、露光装置、ペリクルの製造方法及び半導体装置の製造方法
EP4692930A1 (en) Pellicle, pellicle support, and method for manufacturing pellicle
KR102868688B1 (ko) 극자외선 노광공정의 포토마스크 보호용 펠리클 및 그 제조방법
KR102877833B1 (ko) 극자외선 노광공정의 포토마스크 보호용 펠리클 및 그 제조방법
EP4644989A1 (en) Pellicle film, pellicle, exposure original plate, and exposure device
US20240036459A1 (en) Pellicle for euv lithography masks and methods of manufacturing thereof
TWI920778B (zh) 用於euv微影蝕刻之超薄且超低密度的薄膜、含彼的光罩護膜、及其應用方法
TWI901620B (zh) 防護薄膜框架、防護薄膜、帶防護薄膜的曝光原版及曝光方法、以及半導體或液晶顯示器的製造方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination