KR20230157399A - 기판 처리 장치, 기판 처리 시스템 및 기판 처리 방법 - Google Patents

기판 처리 장치, 기판 처리 시스템 및 기판 처리 방법 Download PDF

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Publication number
KR20230157399A
KR20230157399A KR1020237034609A KR20237034609A KR20230157399A KR 20230157399 A KR20230157399 A KR 20230157399A KR 1020237034609 A KR1020237034609 A KR 1020237034609A KR 20237034609 A KR20237034609 A KR 20237034609A KR 20230157399 A KR20230157399 A KR 20230157399A
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KR
South Korea
Prior art keywords
substrate
laser
laser light
wafer
substrate holding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020237034609A
Other languages
English (en)
Korean (ko)
Inventor
요시히로 카와구치
요헤이 야마시타
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20230157399A publication Critical patent/KR20230157399A/ko
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0643—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising mirrors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
    • H01L21/304—
    • H01L21/67742—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3302—Mechanical parts of transfer devices

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Laser Beam Processing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Electromagnetism (AREA)
  • Robotics (AREA)
KR1020237034609A 2021-03-12 2022-02-28 기판 처리 장치, 기판 처리 시스템 및 기판 처리 방법 Pending KR20230157399A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021040497 2021-03-12
JPJP-P-2021-040497 2021-03-12
PCT/JP2022/008206 WO2022190924A1 (ja) 2021-03-12 2022-02-28 基板処理装置、基板処理システム及び基板処理方法

Publications (1)

Publication Number Publication Date
KR20230157399A true KR20230157399A (ko) 2023-11-16

Family

ID=83226622

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237034609A Pending KR20230157399A (ko) 2021-03-12 2022-02-28 기판 처리 장치, 기판 처리 시스템 및 기판 처리 방법

Country Status (5)

Country Link
US (1) US20240162061A1 (https=)
JP (1) JP7546754B2 (https=)
KR (1) KR20230157399A (https=)
CN (1) CN116887943A (https=)
WO (1) WO2022190924A1 (https=)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011187481A (ja) 2010-03-04 2011-09-22 Disco Corp 加工装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0335511Y2 (https=) * 1987-11-06 1991-07-26
WO2008091380A2 (en) * 2006-08-22 2008-07-31 Gsi Group Corporation System and method for employing a resonant scanner in an x-y high speed drilling system
JP2011230179A (ja) * 2010-04-30 2011-11-17 Mitsuboshi Diamond Industrial Co Ltd レーザ加工装置の光軸調整方法
JP6628521B2 (ja) * 2015-08-28 2020-01-08 株式会社ディスコ レーザー加工装置
CN206747799U (zh) * 2017-05-27 2017-12-15 南京工程学院 一种光纤脉冲激光诱导切割碳纤维复合材料的装置
JP2019188455A (ja) * 2018-04-27 2019-10-31 三星ダイヤモンド工業株式会社 レーザ光軸確認用治具ユニット並びに治具
WO2020213479A1 (ja) * 2019-04-19 2020-10-22 東京エレクトロン株式会社 処理装置及び処理方法
KR102310466B1 (ko) * 2019-06-27 2021-10-13 세메스 주식회사 기판 처리 장치 및 방법
JP7450413B2 (ja) * 2020-03-09 2024-03-15 株式会社ディスコ レーザー加工装置およびレーザー加工装置の調整方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011187481A (ja) 2010-03-04 2011-09-22 Disco Corp 加工装置

Also Published As

Publication number Publication date
JP7546754B2 (ja) 2024-09-06
JPWO2022190924A1 (https=) 2022-09-15
CN116887943A (zh) 2023-10-13
US20240162061A1 (en) 2024-05-16
WO2022190924A1 (ja) 2022-09-15

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P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

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P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000