JP7546754B2 - 基板処理装置、基板処理システム及び基板処理方法 - Google Patents

基板処理装置、基板処理システム及び基板処理方法 Download PDF

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Publication number
JP7546754B2
JP7546754B2 JP2023505301A JP2023505301A JP7546754B2 JP 7546754 B2 JP7546754 B2 JP 7546754B2 JP 2023505301 A JP2023505301 A JP 2023505301A JP 2023505301 A JP2023505301 A JP 2023505301A JP 7546754 B2 JP7546754 B2 JP 7546754B2
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Japan
Prior art keywords
substrate
laser
laser oscillator
optical system
processing apparatus
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JP2023505301A
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English (en)
Japanese (ja)
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JPWO2022190924A5 (https=
JPWO2022190924A1 (https=
Inventor
義広 川口
陽平 山下
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of JPWO2022190924A5 publication Critical patent/JPWO2022190924A5/ja
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0648Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0428Apparatus for mechanical treatment or grinding or cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0643Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising mirrors
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50Working by transmitting the laser beam through or within the workpiece
    • B23K26/57Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • H10P72/0436Apparatus for thermal treatment mainly by radiation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3302Mechanical parts of transfer devices

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Laser Beam Processing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Electromagnetism (AREA)
  • Robotics (AREA)
JP2023505301A 2021-03-12 2022-02-28 基板処理装置、基板処理システム及び基板処理方法 Active JP7546754B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021040497 2021-03-12
JP2021040497 2021-03-12
PCT/JP2022/008206 WO2022190924A1 (ja) 2021-03-12 2022-02-28 基板処理装置、基板処理システム及び基板処理方法

Publications (3)

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JPWO2022190924A1 JPWO2022190924A1 (https=) 2022-09-15
JPWO2022190924A5 JPWO2022190924A5 (https=) 2023-11-27
JP7546754B2 true JP7546754B2 (ja) 2024-09-06

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JP2023505301A Active JP7546754B2 (ja) 2021-03-12 2022-02-28 基板処理装置、基板処理システム及び基板処理方法

Country Status (5)

Country Link
US (1) US20240162061A1 (https=)
JP (1) JP7546754B2 (https=)
KR (1) KR20230157399A (https=)
CN (1) CN116887943A (https=)
WO (1) WO2022190924A1 (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010501354A (ja) 2006-08-22 2010-01-21 ジーエスアイ・グループ・コーポレーション X−y高速穴あけシステム
JP2011187481A (ja) 2010-03-04 2011-09-22 Disco Corp 加工装置
JP2011230179A (ja) 2010-04-30 2011-11-17 Mitsuboshi Diamond Industrial Co Ltd レーザ加工装置の光軸調整方法
JP2017042805A (ja) 2015-08-28 2017-03-02 株式会社ディスコ レーザー加工装置
JP2019188455A (ja) 2018-04-27 2019-10-31 三星ダイヤモンド工業株式会社 レーザ光軸確認用治具ユニット並びに治具
WO2020213479A1 (ja) 2019-04-19 2020-10-22 東京エレクトロン株式会社 処理装置及び処理方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0335511Y2 (https=) * 1987-11-06 1991-07-26
CN206747799U (zh) * 2017-05-27 2017-12-15 南京工程学院 一种光纤脉冲激光诱导切割碳纤维复合材料的装置
KR102310466B1 (ko) * 2019-06-27 2021-10-13 세메스 주식회사 기판 처리 장치 및 방법
JP7450413B2 (ja) * 2020-03-09 2024-03-15 株式会社ディスコ レーザー加工装置およびレーザー加工装置の調整方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010501354A (ja) 2006-08-22 2010-01-21 ジーエスアイ・グループ・コーポレーション X−y高速穴あけシステム
JP2011187481A (ja) 2010-03-04 2011-09-22 Disco Corp 加工装置
JP2011230179A (ja) 2010-04-30 2011-11-17 Mitsuboshi Diamond Industrial Co Ltd レーザ加工装置の光軸調整方法
JP2017042805A (ja) 2015-08-28 2017-03-02 株式会社ディスコ レーザー加工装置
JP2019188455A (ja) 2018-04-27 2019-10-31 三星ダイヤモンド工業株式会社 レーザ光軸確認用治具ユニット並びに治具
WO2020213479A1 (ja) 2019-04-19 2020-10-22 東京エレクトロン株式会社 処理装置及び処理方法

Also Published As

Publication number Publication date
KR20230157399A (ko) 2023-11-16
JPWO2022190924A1 (https=) 2022-09-15
CN116887943A (zh) 2023-10-13
US20240162061A1 (en) 2024-05-16
WO2022190924A1 (ja) 2022-09-15

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