JPWO2022190924A1 - - Google Patents
Info
- Publication number
- JPWO2022190924A1 JPWO2022190924A1 JP2023505301A JP2023505301A JPWO2022190924A1 JP WO2022190924 A1 JPWO2022190924 A1 JP WO2022190924A1 JP 2023505301 A JP2023505301 A JP 2023505301A JP 2023505301 A JP2023505301 A JP 2023505301A JP WO2022190924 A1 JPWO2022190924 A1 JP WO2022190924A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0643—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising mirrors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
- H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
- H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
- H10P72/0436—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
- H10P72/3302—Mechanical parts of transfer devices
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Laser Beam Processing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Electromagnetism (AREA)
- Robotics (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021040497 | 2021-03-12 | ||
| JP2021040497 | 2021-03-12 | ||
| PCT/JP2022/008206 WO2022190924A1 (ja) | 2021-03-12 | 2022-02-28 | 基板処理装置、基板処理システム及び基板処理方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022190924A1 true JPWO2022190924A1 (https=) | 2022-09-15 |
| JPWO2022190924A5 JPWO2022190924A5 (https=) | 2023-11-27 |
| JP7546754B2 JP7546754B2 (ja) | 2024-09-06 |
Family
ID=83226622
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023505301A Active JP7546754B2 (ja) | 2021-03-12 | 2022-02-28 | 基板処理装置、基板処理システム及び基板処理方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240162061A1 (https=) |
| JP (1) | JP7546754B2 (https=) |
| KR (1) | KR20230157399A (https=) |
| CN (1) | CN116887943A (https=) |
| WO (1) | WO2022190924A1 (https=) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0335511Y2 (https=) * | 1987-11-06 | 1991-07-26 | ||
| JP2010501354A (ja) * | 2006-08-22 | 2010-01-21 | ジーエスアイ・グループ・コーポレーション | Ｘ−ｙ高速穴あけシステム |
| JP2011187481A (ja) * | 2010-03-04 | 2011-09-22 | Disco Corp | 加工装置 |
| JP2011230179A (ja) * | 2010-04-30 | 2011-11-17 | Mitsuboshi Diamond Industrial Co Ltd | レーザ加工装置の光軸調整方法 |
| JP2017042805A (ja) * | 2015-08-28 | 2017-03-02 | 株式会社ディスコ | レーザー加工装置 |
| JP2019188455A (ja) * | 2018-04-27 | 2019-10-31 | 三星ダイヤモンド工業株式会社 | レーザ光軸確認用治具ユニット並びに治具 |
| WO2020213479A1 (ja) * | 2019-04-19 | 2020-10-22 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN206747799U (zh) * | 2017-05-27 | 2017-12-15 | 南京工程学院 | 一种光纤脉冲激光诱导切割碳纤维复合材料的装置 |
| KR102310466B1 (ko) * | 2019-06-27 | 2021-10-13 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
| JP7450413B2 (ja) * | 2020-03-09 | 2024-03-15 | 株式会社ディスコ | レーザー加工装置およびレーザー加工装置の調整方法 |
-
2022
- 2022-02-28 US US18/549,934 patent/US20240162061A1/en active Pending
- 2022-02-28 JP JP2023505301A patent/JP7546754B2/ja active Active
- 2022-02-28 KR KR1020237034609A patent/KR20230157399A/ko active Pending
- 2022-02-28 WO PCT/JP2022/008206 patent/WO2022190924A1/ja not_active Ceased
- 2022-02-28 CN CN202280017660.3A patent/CN116887943A/zh active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0335511Y2 (https=) * | 1987-11-06 | 1991-07-26 | ||
| JP2010501354A (ja) * | 2006-08-22 | 2010-01-21 | ジーエスアイ・グループ・コーポレーション | Ｘ−ｙ高速穴あけシステム |
| JP2011187481A (ja) * | 2010-03-04 | 2011-09-22 | Disco Corp | 加工装置 |
| JP2011230179A (ja) * | 2010-04-30 | 2011-11-17 | Mitsuboshi Diamond Industrial Co Ltd | レーザ加工装置の光軸調整方法 |
| JP2017042805A (ja) * | 2015-08-28 | 2017-03-02 | 株式会社ディスコ | レーザー加工装置 |
| JP2019188455A (ja) * | 2018-04-27 | 2019-10-31 | 三星ダイヤモンド工業株式会社 | レーザ光軸確認用治具ユニット並びに治具 |
| WO2020213479A1 (ja) * | 2019-04-19 | 2020-10-22 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20230157399A (ko) | 2023-11-16 |
| JP7546754B2 (ja) | 2024-09-06 |
| CN116887943A (zh) | 2023-10-13 |
| US20240162061A1 (en) | 2024-05-16 |
| WO2022190924A1 (ja) | 2022-09-15 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230901 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20230901 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20240409 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240530 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20240730 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240827 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7546754 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |