KR20230125832A - 웨트 에칭 용액 및 웨트 에칭 방법 - Google Patents

웨트 에칭 용액 및 웨트 에칭 방법 Download PDF

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Publication number
KR20230125832A
KR20230125832A KR1020237026229A KR20237026229A KR20230125832A KR 20230125832 A KR20230125832 A KR 20230125832A KR 1020237026229 A KR1020237026229 A KR 1020237026229A KR 20237026229 A KR20237026229 A KR 20237026229A KR 20230125832 A KR20230125832 A KR 20230125832A
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KR
South Korea
Prior art keywords
metal layer
etching
metal
etching solution
solution
Prior art date
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KR1020237026229A
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English (en)
Korean (ko)
Inventor
다카히사 다니구치
치 치엔 린
다츠오 미야자키
Original Assignee
샌트랄 글래스 컴퍼니 리미티드
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Publication of KR20230125832A publication Critical patent/KR20230125832A/ko
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/28—Acidic compositions for etching iron group metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/38—Alkaline compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
    • H01L21/30604—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020237026229A 2021-01-07 2022-01-04 웨트 에칭 용액 및 웨트 에칭 방법 Withdrawn KR20230125832A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021001370 2021-01-07
JPJP-P-2021-001370 2021-01-07
PCT/JP2022/000013 WO2022149565A1 (ja) 2021-01-07 2022-01-04 ウェットエッチング溶液及びウェットエッチング方法

Publications (1)

Publication Number Publication Date
KR20230125832A true KR20230125832A (ko) 2023-08-29

Family

ID=82357772

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237026229A Withdrawn KR20230125832A (ko) 2021-01-07 2022-01-04 웨트 에칭 용액 및 웨트 에칭 방법

Country Status (6)

Country Link
US (1) US20240055273A1 (https=)
JP (1) JPWO2022149565A1 (https=)
KR (1) KR20230125832A (https=)
CN (1) CN116710597A (https=)
TW (1) TW202235683A (https=)
WO (1) WO2022149565A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2024048382A1 (https=) * 2022-08-31 2024-03-07
TWI895691B (zh) * 2023-02-14 2025-09-01 關東鑫林科技股份有限公司 蝕刻液組成物及使用其之蝕刻方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5523325U (https=) 1978-07-28 1980-02-15
WO2006103751A1 (ja) 2005-03-29 2006-10-05 Mitsubishi Chemical Corporation 銅エッチング液及びエッチング方法
JP4896995B2 (ja) 2006-03-29 2012-03-14 インテル コーポレイション 半導体プロセスにおけるメタルハードマスク材料をエッチングするための組成物
JP2014093407A (ja) 2012-11-02 2014-05-19 Fujifilm Corp エッチング液、これを用いたエッチング方法及び半導体素子の製造方法
JP2017028257A (ja) 2015-07-23 2017-02-02 セントラル硝子株式会社 ウェットエッチング方法及びエッチング液
JP2019061978A (ja) 2017-09-22 2019-04-18 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0793289B2 (ja) * 1991-04-01 1995-10-09 エアー．プロダクツ．アンド．ケミカルス．インコーポレーテッド 金属表面の蒸気相エッチング法
US5782986A (en) * 1996-01-11 1998-07-21 Fsi International Process for metals removal using beta-diketone or beta-ketoimine ligand forming compounds
US5939334A (en) * 1997-05-22 1999-08-17 Sharp Laboratories Of America, Inc. System and method of selectively cleaning copper substrate surfaces, in-situ, to remove copper oxides
EP1673802A1 (en) * 2003-10-14 2006-06-28 EKC Technology, INC. REMOVAL OF POST ETCH RESIDUES AND COPPER CONTAMINATION FROM LOW-K DIELECTRICS USING SUPERCRITICAL CO sb 2 /sb WITH DIKETONE ADDITIVES

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5523325U (https=) 1978-07-28 1980-02-15
WO2006103751A1 (ja) 2005-03-29 2006-10-05 Mitsubishi Chemical Corporation 銅エッチング液及びエッチング方法
JP4896995B2 (ja) 2006-03-29 2012-03-14 インテル コーポレイション 半導体プロセスにおけるメタルハードマスク材料をエッチングするための組成物
JP2014093407A (ja) 2012-11-02 2014-05-19 Fujifilm Corp エッチング液、これを用いたエッチング方法及び半導体素子の製造方法
JP2017028257A (ja) 2015-07-23 2017-02-02 セントラル硝子株式会社 ウェットエッチング方法及びエッチング液
JP2019061978A (ja) 2017-09-22 2019-04-18 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

Also Published As

Publication number Publication date
US20240055273A1 (en) 2024-02-15
JPWO2022149565A1 (https=) 2022-07-14
CN116710597A (zh) 2023-09-05
TW202235683A (zh) 2022-09-16
WO2022149565A1 (ja) 2022-07-14

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