JPWO2022149565A1 - - Google Patents
Info
- Publication number
- JPWO2022149565A1 JPWO2022149565A1 JP2022574047A JP2022574047A JPWO2022149565A1 JP WO2022149565 A1 JPWO2022149565 A1 JP WO2022149565A1 JP 2022574047 A JP2022574047 A JP 2022574047A JP 2022574047 A JP2022574047 A JP 2022574047A JP WO2022149565 A1 JPWO2022149565 A1 JP WO2022149565A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/66—Wet etching of conductive or resistive materials
- H10P50/663—Wet etching of conductive or resistive materials by chemical means only
- H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/28—Acidic compositions for etching iron group metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/38—Alkaline compositions for etching refractory metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/64—Wet etching of semiconductor materials
- H10P50/642—Chemical etching
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021001370 | 2021-01-07 | ||
| PCT/JP2022/000013 WO2022149565A1 (ja) | 2021-01-07 | 2022-01-04 | ウェットエッチング溶液及びウェットエッチング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2022149565A1 true JPWO2022149565A1 (https=) | 2022-07-14 |
| JPWO2022149565A5 JPWO2022149565A5 (https=) | 2024-09-27 |
Family
ID=82357772
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022574047A Pending JPWO2022149565A1 (https=) | 2021-01-07 | 2022-01-04 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20240055273A1 (https=) |
| JP (1) | JPWO2022149565A1 (https=) |
| KR (1) | KR20230125832A (https=) |
| CN (1) | CN116710597A (https=) |
| TW (1) | TW202235683A (https=) |
| WO (1) | WO2022149565A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2024048382A1 (https=) * | 2022-08-31 | 2024-03-07 | ||
| TWI895691B (zh) * | 2023-02-14 | 2025-09-01 | 關東鑫林科技股份有限公司 | 蝕刻液組成物及使用其之蝕刻方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05136107A (ja) * | 1991-04-01 | 1993-06-01 | Air Prod And Chem Inc | 蒸気相食刻剤と食刻法 |
| JPH10321594A (ja) * | 1997-05-22 | 1998-12-04 | Sharp Corp | 金属酸化物を選択的に除去し金属表面をインサイチュに清浄化する方法およびシステムならびに集積回路 |
| JP2000503805A (ja) * | 1996-01-11 | 2000-03-28 | エフエスアイ インターナショナル インコーポレイテッド | ベータ―ジケトンまたはベータ―ケトイミン配位子形成化合物を用いる金属除去のための改良された方法 |
| US20050107274A1 (en) * | 2003-10-14 | 2005-05-19 | Jerome Daviot | Removal of post etch residues and copper contamination from low-k dielectrics using supercritical CO2 with diketone additives |
| WO2017013988A1 (ja) * | 2015-07-23 | 2017-01-26 | セントラル硝子株式会社 | ウェットエッチング方法及びエッチング液 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5523325U (https=) | 1978-07-28 | 1980-02-15 | ||
| WO2006103751A1 (ja) | 2005-03-29 | 2006-10-05 | Mitsubishi Chemical Corporation | 銅エッチング液及びエッチング方法 |
| US8025811B2 (en) | 2006-03-29 | 2011-09-27 | Intel Corporation | Composition for etching a metal hard mask material in semiconductor processing |
| JP2014093407A (ja) | 2012-11-02 | 2014-05-19 | Fujifilm Corp | エッチング液、これを用いたエッチング方法及び半導体素子の製造方法 |
| JP7034645B2 (ja) | 2017-09-22 | 2022-03-14 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
-
2022
- 2022-01-04 JP JP2022574047A patent/JPWO2022149565A1/ja active Pending
- 2022-01-04 WO PCT/JP2022/000013 patent/WO2022149565A1/ja not_active Ceased
- 2022-01-04 US US18/271,185 patent/US20240055273A1/en not_active Abandoned
- 2022-01-04 KR KR1020237026229A patent/KR20230125832A/ko not_active Withdrawn
- 2022-01-04 CN CN202280009029.9A patent/CN116710597A/zh active Pending
- 2022-01-07 TW TW111100786A patent/TW202235683A/zh unknown
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05136107A (ja) * | 1991-04-01 | 1993-06-01 | Air Prod And Chem Inc | 蒸気相食刻剤と食刻法 |
| JP2000503805A (ja) * | 1996-01-11 | 2000-03-28 | エフエスアイ インターナショナル インコーポレイテッド | ベータ―ジケトンまたはベータ―ケトイミン配位子形成化合物を用いる金属除去のための改良された方法 |
| JPH10321594A (ja) * | 1997-05-22 | 1998-12-04 | Sharp Corp | 金属酸化物を選択的に除去し金属表面をインサイチュに清浄化する方法およびシステムならびに集積回路 |
| US20050107274A1 (en) * | 2003-10-14 | 2005-05-19 | Jerome Daviot | Removal of post etch residues and copper contamination from low-k dielectrics using supercritical CO2 with diketone additives |
| WO2017013988A1 (ja) * | 2015-07-23 | 2017-01-26 | セントラル硝子株式会社 | ウェットエッチング方法及びエッチング液 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20240055273A1 (en) | 2024-02-15 |
| KR20230125832A (ko) | 2023-08-29 |
| CN116710597A (zh) | 2023-09-05 |
| TW202235683A (zh) | 2022-09-16 |
| WO2022149565A1 (ja) | 2022-07-14 |
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