KR20230022943A - 수평 광 방출을 갖는 다색 led 픽셀 유닛을 위한 시스템들 및 방법들 - Google Patents

수평 광 방출을 갖는 다색 led 픽셀 유닛을 위한 시스템들 및 방법들 Download PDF

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KR20230022943A
KR20230022943A KR1020237000113A KR20237000113A KR20230022943A KR 20230022943 A KR20230022943 A KR 20230022943A KR 1020237000113 A KR1020237000113 A KR 1020237000113A KR 20237000113 A KR20237000113 A KR 20237000113A KR 20230022943 A KR20230022943 A KR 20230022943A
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layer
led
reflective
light emitting
micro
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Korean (ko)
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췬차오 쉬
후이원 쉬
치밍 리
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제이드 버드 디스플레이(상하이) 리미티드
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    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
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    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
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    • H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips

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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Devices (AREA)
KR1020237000113A 2020-06-03 2021-06-03 수평 광 방출을 갖는 다색 led 픽셀 유닛을 위한 시스템들 및 방법들 Withdrawn KR20230022943A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063034394P 2020-06-03 2020-06-03
US63/034,394 2020-06-03
PCT/US2021/035742 WO2021247894A1 (en) 2020-06-03 2021-06-03 Systems and methods for multi-color led pixel unit with horizontal light emission

Publications (1)

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KR20230022943A true KR20230022943A (ko) 2023-02-16

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KR1020237000113A Withdrawn KR20230022943A (ko) 2020-06-03 2021-06-03 수평 광 방출을 갖는 다색 led 픽셀 유닛을 위한 시스템들 및 방법들

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Country Link
US (2) US11967589B2 (https=)
EP (1) EP4162538A4 (https=)
JP (1) JP2023527963A (https=)
KR (1) KR20230022943A (https=)
CN (1) CN115843393A (https=)
AU (1) AU2021282566A1 (https=)
DE (1) DE21818011T1 (https=)
WO (1) WO2021247894A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102849442B1 (ko) * 2024-12-27 2025-08-22 웨이브로드 주식회사 마이크로디스플레이 패널 및 그 제조 방법

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102503578B1 (ko) * 2017-06-30 2023-02-24 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치
US10756162B2 (en) 2018-08-31 2020-08-25 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with magnetic element
KR20220024710A (ko) * 2019-06-19 2022-03-03 제이드 버드 디스플레이(상하이) 리미티드 다색 led 픽셀 유닛을 위한 시스템들 및 방법들
US12310159B2 (en) * 2019-06-28 2025-05-20 Massachusetts Institute Of Technology Integrated structure for an optoelectronic device and method of fabricating the same
US11476299B2 (en) * 2020-08-31 2022-10-18 Hong Kong Beida Jade Bird Display Limited Double color micro LED display panel
KR20220149865A (ko) * 2021-04-30 2022-11-09 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
US12588326B2 (en) * 2021-11-12 2026-03-24 Lumileds Singapore Pte. Ltd. Composite cathode contact for monolithically integrated micro-LEDs, mini-LEDs and LED arrays
JP2025505061A (ja) 2021-12-31 2025-02-20 ジェイド バード ディスプレイ（シャンハイ） リミテッド マイクロｌｅｄプロジェクタ
WO2023123487A1 (en) * 2021-12-31 2023-07-06 Jade Bird Display (Shanghai) Company A micro led projector
EP4487386A1 (en) * 2022-03-03 2025-01-08 Jade Bird Display (Shanghai) Limited Micro led, micro led panneland micro led chip
JP2023154505A (ja) * 2022-04-07 2023-10-20 Ｔｏｐｐａｎホールディングス株式会社 表示装置
US20230352466A1 (en) * 2022-04-28 2023-11-02 Meta Platforms Technologies, Llc Stepped micro-lens on micro-led
CN114899298B (zh) * 2022-07-12 2022-10-25 诺视科技(苏州)有限公司 一种像素单元及其制作方法、微显示屏、分立器件
KR102904191B1 (ko) * 2022-10-05 2025-12-26 엘지전자 주식회사 디스플레이 화소용 적층형 반도체 발광소자 및 이를 포함하는 디스플레이 장치
KR102822777B1 (ko) * 2022-12-15 2025-06-19 엘지전자 주식회사 발광 구조를 구비한 디스플레이 장치
CN118974957B (zh) * 2022-12-23 2026-03-10 上海显耀显示科技股份有限公司 微型led结构及微型led面板
CN118843938B (zh) * 2022-12-23 2025-10-31 上海显耀显示科技有限公司 微型led结构及微型led面板
CN116031278A (zh) * 2023-01-19 2023-04-28 湖北星纪时代科技有限公司 发光面板及显示装置
WO2024207420A1 (en) * 2023-04-07 2024-10-10 Jade Bird Display (shanghai) Limited Micro led pixel and micro led panel
US20240395967A1 (en) * 2023-05-24 2024-11-28 Rayleigh Vision Limited Micro light-emitting diode structure
CN121816846A (zh) * 2023-07-31 2026-04-07 上海显耀显示科技股份有限公司 微型led以及微型led显示面板
CN119486396A (zh) * 2023-07-31 2025-02-18 武汉华星光电半导体显示技术有限公司 显示背板及显示装置
WO2025030494A1 (en) * 2023-08-10 2025-02-13 Jade Bird Display (shanghai) Limited Micro led pixel and micro led array panel
WO2025030492A1 (en) * 2023-08-10 2025-02-13 Jade Bird Display (shanghai) Limited Micro led pixel and micro led array panel
WO2025030493A1 (en) * 2023-08-10 2025-02-13 Jade Bird Display (shanghai) Limited Micro led pixel and micro led array panel
CN117253883A (zh) * 2023-08-30 2023-12-19 上海显耀显示科技有限公司 Micro led显示面板及制造方法
US20250105220A1 (en) * 2023-09-27 2025-03-27 Rayleigh Vision Limited Vertically stacked light-emitting diode structure
CN117153971B (zh) * 2023-10-30 2024-01-23 盐城鸿石智能科技有限公司 一种高亮度MicroLED及其制备方法
WO2025097375A1 (en) * 2023-11-09 2025-05-15 Jade Bird Display (shanghai) Limited Micro led and micro led display panel
WO2025097378A1 (en) * 2023-11-09 2025-05-15 Jade Bird Display (shanghai) Limited Micro led, micro led display panel and epitaxial structure
US20240136339A1 (en) * 2023-12-11 2024-04-25 Meta Platforms Technologies, Llc Micro-display panel for near-eye display
WO2025205907A1 (ja) * 2024-03-27 2025-10-02 ソニーグループ株式会社 発光装置および画像表示装置
WO2025204187A1 (ja) * 2024-03-29 2025-10-02 ソニーグループ株式会社 発光装置および画像表示装置
CN118248808B (zh) * 2024-04-02 2026-03-13 上海显耀显示科技股份有限公司 微显示面板、显示模组及其形成方法、电子设备
KR20250161739A (ko) * 2024-05-08 2025-11-18 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
CN119069610A (zh) * 2024-08-23 2024-12-03 武汉华星光电半导体显示技术有限公司 显示面板及显示装置
CN119907413B (zh) * 2024-11-15 2026-01-27 合肥维信诺科技有限公司 显示面板及显示装置

Family Cites Families (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2962750B2 (ja) 1989-12-28 1999-10-12 株式会社リコー レーザｃｖｄ法による光学素子製造におけるレーザビームの照射方法
JP3259931B2 (ja) 1992-04-17 2002-02-25 シャープ株式会社 半導体発光素子および半導体表示装置
US6122109A (en) 1998-04-16 2000-09-19 The University Of New Mexico Non-planar micro-optical structures
US8829546B2 (en) * 1999-11-19 2014-09-09 Cree, Inc. Rare earth doped layer or substrate for light conversion
US6956701B1 (en) 2004-04-26 2005-10-18 Infocus Corporation Method and apparatus for combining light paths of multiple colored light sources through a common integration tunnel
TWI249148B (en) 2004-04-13 2006-02-11 Epistar Corp Light-emitting device array having binding layer
US6699729B1 (en) 2002-10-25 2004-03-02 Omnivision International Holding Ltd Method of forming planar color filters in an image sensor
US7393469B2 (en) * 2003-07-31 2008-07-01 Ramazan Benrashid High performance sol-gel spin-on glass materials
JP4127533B2 (ja) 2003-11-26 2008-07-30 株式会社リコー 発光素子アレイ、その発光素子アレイを備えた光書込ユニット及び画像形成装置、並びに、その発光素子アレイの作製方法
US20070090387A1 (en) 2004-03-29 2007-04-26 Articulated Technologies, Llc Solid state light sheet and encapsulated bare die semiconductor circuits
US20070170444A1 (en) * 2004-07-07 2007-07-26 Cao Group, Inc. Integrated LED Chip to Emit Multiple Colors and Method of Manufacturing the Same
US7029944B1 (en) 2004-09-30 2006-04-18 Sharp Laboratories Of America, Inc. Methods of forming a microlens array over a substrate employing a CMP stop
JP4837295B2 (ja) 2005-03-02 2011-12-14 株式会社沖データ 半導体装置、ｌｅｄ装置、ｌｅｄヘッド、及び画像形成装置
EP1850378A3 (en) 2006-04-28 2013-08-07 Semiconductor Energy Laboratory Co., Ltd. Memory device and semicondutor device
US7573074B2 (en) * 2006-05-19 2009-08-11 Bridgelux, Inc. LED electrode
TW200834962A (en) * 2007-02-08 2008-08-16 Touch Micro System Tech LED array package structure having Si-substrate and method of making the same
US20090020924A1 (en) 2007-02-21 2009-01-22 Iowa State University Research Foundation, Inc. Drying-mediated self-assembly of ordered or hierarchically ordered micro- and sub-micro scale structures and their uses as multifunctional materials
JP4985067B2 (ja) * 2007-04-11 2012-07-25 日立電線株式会社 半導体発光素子
WO2009010762A1 (en) * 2007-07-19 2009-01-22 Photonstar Led Limited Vertical led with conductive vias
KR20090061310A (ko) 2007-12-11 2009-06-16 주식회사 동부하이텍 이미지 센서 및 그 제조방법
US8292480B2 (en) 2008-07-10 2012-10-23 Koito Manufacturing Co., Ltd. Lamp including main reflector, sub-reflector and LED assembly
JP5429615B2 (ja) 2008-12-12 2014-02-26 Ｎｌｔテクノロジー株式会社 レンズシートおよび表示パネル
EP2375452A1 (en) 2010-04-06 2011-10-12 FOM Institute for Atomic and Moleculair Physics Nanoparticle antireflection layer
US20110284887A1 (en) 2010-05-21 2011-11-24 Shang-Yi Wu Light emitting chip package and method for forming the same
CN101872824A (zh) 2010-06-07 2010-10-27 厦门市三安光电科技有限公司 侧面具有双反射层的氮化镓基倒装发光二极管及其制备方法
FR2975532B1 (fr) * 2011-05-18 2013-05-10 Commissariat Energie Atomique Connexion electrique en serie de nanofils emetteurs de lumiere
TWI436458B (zh) 2011-07-29 2014-05-01 鴻海精密工業股份有限公司 晶圓級封裝結構及其製作方法
US9494294B2 (en) 2012-03-23 2016-11-15 Cree, Inc. Modular indirect troffer
WO2013161146A1 (ja) * 2012-04-26 2013-10-31 シャープ株式会社 半導体装置の製造方法
US9178123B2 (en) 2012-12-10 2015-11-03 LuxVue Technology Corporation Light emitting device reflective bank structure
US9196606B2 (en) 2013-01-09 2015-11-24 Nthdegree Technologies Worldwide Inc. Bonding transistor wafer to LED wafer to form active LED modules
US9484504B2 (en) 2013-05-14 2016-11-01 Apple Inc. Micro LED with wavelength conversion layer
JP6480919B2 (ja) 2013-05-21 2019-03-13 クラレト，ホルヘ ヴィセンテ ブラスコ プレノプティックセンサとその製造方法およびプレノプティックセンサを有する配置
US8987765B2 (en) 2013-06-17 2015-03-24 LuxVue Technology Corporation Reflective bank structure and method for integrating a light emitting device
US9111464B2 (en) 2013-06-18 2015-08-18 LuxVue Technology Corporation LED display with wavelength conversion layer
JP2015012244A (ja) * 2013-07-01 2015-01-19 株式会社東芝 半導体発光素子
TWI467528B (zh) 2013-10-30 2015-01-01 友達光電股份有限公司 發光二極體顯示面板及其製作方法
KR102285786B1 (ko) 2014-01-20 2021-08-04 삼성전자 주식회사 반도체 발광 소자
US9318475B2 (en) 2014-05-15 2016-04-19 LuxVue Technology Corporation Flexible display and method of formation with sacrificial release layer
WO2016043113A1 (ja) 2014-09-16 2016-03-24 シャープ株式会社 有機エレクトロルミネッセンス装置および有機エレクトロルミネッセンス装置の製造方法
JP6450965B2 (ja) 2014-10-07 2019-01-16 セイコーエプソン株式会社 マイクロレンズアレイ基板、マイクロレンズアレイ基板を備えた電気光学装置、及び投写型表示装置
KR102520955B1 (ko) 2015-08-31 2023-04-13 엘지디스플레이 주식회사 유기발광 표시장치
US10008697B2 (en) 2015-08-31 2018-06-26 Lg Display Co., Ltd. Organic light emitting diode display device
US10304811B2 (en) * 2015-09-04 2019-05-28 Hong Kong Beida Jade Bird Display Limited Light-emitting diode display panel with micro lens array
US10177127B2 (en) * 2015-09-04 2019-01-08 Hong Kong Beida Jade Bird Display Limited Semiconductor apparatus and method of manufacturing the same
US10304813B2 (en) 2015-11-05 2019-05-28 Innolux Corporation Display device having a plurality of bank structures
KR101739771B1 (ko) 2015-11-30 2017-05-26 엘지디스플레이 주식회사 유기발광 표시장치 및 그 제조방법
KR102546307B1 (ko) 2015-12-02 2023-06-21 삼성전자주식회사 발광 소자 및 이를 포함하는 표시 장치
US10068888B2 (en) 2015-12-21 2018-09-04 Hong Kong Beida Jade Bird Display Limited Making semiconductor devices with alignment bonding and substrate removal
KR20170108321A (ko) * 2016-03-17 2017-09-27 주식회사 루멘스 발광 다이오드
US10037981B2 (en) 2016-05-18 2018-07-31 Globalfoundries Inc. Integrated display system with multi-color light emitting diodes (LEDs)
US10388691B2 (en) 2016-05-18 2019-08-20 Globalfoundries Inc. Light emitting diodes (LEDs) with stacked multi-color pixels for displays
US10304375B2 (en) 2016-09-23 2019-05-28 Hong Kong Beida Jade Bird Display Limited Micro display panels with integrated micro-reflectors
WO2018064805A1 (en) * 2016-10-08 2018-04-12 Goertek. Inc Display device and electronics apparatus
US10412806B2 (en) 2016-11-10 2019-09-10 Hong Kong Beida Jade Bird Display Limited Multi-color micro-LED array light source
CN106449659B (zh) * 2016-11-11 2019-06-07 京东方科技集团股份有限公司 阵列基板及其制造方法、显示器
US10325893B2 (en) 2016-12-13 2019-06-18 Hong Kong Beida Jade Bird Display Limited Mass transfer of micro structures using adhesives
US10998465B2 (en) * 2017-01-09 2021-05-04 Glo Ab Light emitting diodes with integrated reflector for a direct view display and method of making thereof
EP4148811A1 (en) * 2017-03-20 2023-03-15 Jade Bird Display (Shang Hai) Limited Making semiconductor devices by stacking strata of micro leds
US9799810B1 (en) * 2017-03-30 2017-10-24 Harvatek Corporation Light emitting device
FR3069106B1 (fr) * 2017-07-17 2019-10-18 Commissariat A L'energie Atomique Et Aux Energies Alternatives Diode electroluminescente comportant un empilement a partie amincie et procede d'elaboration de la diode electroluminescente
US10733930B2 (en) 2017-08-23 2020-08-04 Facebook Technologies, Llc Interposer for multi-layer display architecture
US10361349B2 (en) 2017-09-01 2019-07-23 Cree, Inc. Light emitting diodes, components and related methods
US11282981B2 (en) * 2017-11-27 2022-03-22 Seoul Viosys Co., Ltd. Passivation covered light emitting unit stack
US10892297B2 (en) 2017-11-27 2021-01-12 Seoul Viosys Co., Ltd. Light emitting diode (LED) stack for a display
US10325791B1 (en) 2017-12-13 2019-06-18 Facebook Technologies, Llc Formation of elastomeric layer on selective regions of light emitting device
US11552057B2 (en) 2017-12-20 2023-01-10 Seoul Viosys Co., Ltd. LED unit for display and display apparatus having the same
US10804429B2 (en) 2017-12-22 2020-10-13 Lumileds Llc III-nitride multi-wavelength LED for visible light communication
US11114499B2 (en) * 2018-01-02 2021-09-07 Seoul Viosys Co., Ltd. Display device having light emitting stacked structure
US10784240B2 (en) * 2018-01-03 2020-09-22 Seoul Viosys Co., Ltd. Light emitting device with LED stack for display and display apparatus having the same
WO2019149555A1 (en) * 2018-02-01 2019-08-08 Signify Holding B.V. Polarized lighting device containing polarization preserving reflector
US10325894B1 (en) 2018-04-17 2019-06-18 Shaoher Pan Integrated multi-color light-emitting pixel arrays based devices by bonding
KR102299992B1 (ko) * 2018-04-25 2021-09-10 삼성디스플레이 주식회사 발광 장치, 이를 구비한 표시 장치, 및 그의 제조 방법
KR102600928B1 (ko) * 2018-07-05 2023-11-14 삼성디스플레이 주식회사 발광 표시 장치 및 그의 제조 방법
KR102652645B1 (ko) 2018-09-03 2024-04-02 삼성디스플레이 주식회사 발광 장치 및 이를 구비하는 표시 장치
CN109256455B (zh) 2018-09-19 2020-06-12 福州大学 一种光效提取和无像素干扰的全彩化Micro-LED显示结构及其制造方法
KR102516131B1 (ko) * 2018-09-21 2023-04-03 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법
CN109920826A (zh) * 2019-03-15 2019-06-21 京东方科技集团股份有限公司 显示背板及其制作方法、显示装置
US11450648B2 (en) * 2019-03-19 2022-09-20 Seoul Viosys Co., Ltd. Light emitting device package and application thereof
KR102871479B1 (ko) 2019-05-14 2025-10-16 서울바이오시스 주식회사 Led 칩 및 그것을 제조하는 방법
KR20220024710A (ko) * 2019-06-19 2022-03-03 제이드 버드 디스플레이(상하이) 리미티드 다색 led 픽셀 유닛을 위한 시스템들 및 방법들
KR102852286B1 (ko) 2019-09-24 2025-08-28 삼성전자주식회사 디스플레이 장치
US11817435B2 (en) 2019-10-28 2023-11-14 Seoul Viosys Co., Ltd. Light emitting device for display and LED display apparatus having the same
FR3109018A1 (fr) 2020-04-06 2021-10-08 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif a matrice de diodes photo-emettrices et/ou photo-receptrices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102849442B1 (ko) * 2024-12-27 2025-08-22 웨이브로드 주식회사 마이크로디스플레이 패널 및 그 제조 방법

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