DE21818011T1 - Systeme und verfahren für eine mehrfarbige led-pixeleinheit mit horizontaler lichtemission - Google Patents
Systeme und verfahren für eine mehrfarbige led-pixeleinheit mit horizontaler lichtemission Download PDFInfo
- Publication number
- DE21818011T1 DE21818011T1 DE21818011.5T DE21818011T DE21818011T1 DE 21818011 T1 DE21818011 T1 DE 21818011T1 DE 21818011 T DE21818011 T DE 21818011T DE 21818011 T1 DE21818011 T1 DE 21818011T1
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- Prior art keywords
- layer
- reflective
- color led
- led structure
- pixel unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims abstract 8
- 229910052751 metal Inorganic materials 0.000 claims abstract 7
- 239000002184 metal Substances 0.000 claims abstract 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims 4
- 239000000463 material Substances 0.000 claims 2
- 125000006850 spacer group Chemical group 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims 1
- 238000002310 reflectometry Methods 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
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- Electroluminescent Light Sources (AREA)
- Led Devices (AREA)
Abstract
Eine Mikro-Lichtemittierende-Dioden-(LED)-Pixeleinheit, umfassend,eine erste Farb-LED-Struktur, die auf einem IC-Substrat gebildet ist, wobei die erste Farb-LED-Struktur eine erste lichtemittierende Schicht umfasst und eine erste reflektierende Struktur auf einer Unterseite der ersten lichtemittierenden Schicht gebildet ist;eine erste Bindungsmetallschicht, die an einer Unterseite der ersten Farb-LED-Struktur gebildet ist und so konfiguriert ist, dass sie das IC-Substrat und die erste Farb-LED-Struktur verbindet;eine zweite Bindungsmetallschicht, die auf einer Oberseite der ersten Farb-LED-Struktur gebildet ist;eine zweite Farb-LED-Struktur, die auf der zweiten Bindungsmetallschicht gebildet ist, wobei die zweite Farb-LED-Struktur eine zweite lichtemittierende Schicht umfasst und eine zweite reflektierende Struktur auf einer Unterseite der zweiten lichtemittierenden Schicht gebildet ist;eine obere Elektrodenschicht, die die erste Farb-LED-Struktur und die zweite Farb-LED-Struktur bedeckt und mit der ersten Farb-LED-Struktur und der zweiten Farb-LED-Struktur elektrisch kontaktiert ist, wobei das IC-Substrat mit der ersten Farb-LED-Struktur und der zweiten Farb-LED-Struktur elektrisch verbunden ist; undeine reflektierende Schale, die die erste LED-Farbstruktur und die zweite LED-Farbstruktur umgibt;wobei das von der ersten lichtemittierenden Schicht und der zweiten lichtemittierenden Schicht emittierte Licht im Wesentlichen in einer horizontalen Richtung auf die reflektierende Schale trifft und von dieser nach oben reflektiert wird.
Claims (16)
- Eine Mikro-Lichtemittierende-Dioden-(LED)-Pixeleinheit, umfassend, eine erste Farb-LED-Struktur, die auf einem IC-Substrat gebildet ist, wobei die erste Farb-LED-Struktur eine erste lichtemittierende Schicht umfasst und eine erste reflektierende Struktur auf einer Unterseite der ersten lichtemittierenden Schicht gebildet ist; eine erste Bindungsmetallschicht, die an einer Unterseite der ersten Farb-LED-Struktur gebildet ist und so konfiguriert ist, dass sie das IC-Substrat und die erste Farb-LED-Struktur verbindet; eine zweite Bindungsmetallschicht, die auf einer Oberseite der ersten Farb-LED-Struktur gebildet ist; eine zweite Farb-LED-Struktur, die auf der zweiten Bindungsmetallschicht gebildet ist, wobei die zweite Farb-LED-Struktur eine zweite lichtemittierende Schicht umfasst und eine zweite reflektierende Struktur auf einer Unterseite der zweiten lichtemittierenden Schicht gebildet ist; eine obere Elektrodenschicht, die die erste Farb-LED-Struktur und die zweite Farb-LED-Struktur bedeckt und mit der ersten Farb-LED-Struktur und der zweiten Farb-LED-Struktur elektrisch kontaktiert ist, wobei das IC-Substrat mit der ersten Farb-LED-Struktur und der zweiten Farb-LED-Struktur elektrisch verbunden ist; und eine reflektierende Schale, die die erste LED-Farbstruktur und die zweite LED-Farbstruktur umgibt; wobei das von der ersten lichtemittierenden Schicht und der zweiten lichtemittierenden Schicht emittierte Licht im Wesentlichen in einer horizontalen Richtung auf die reflektierende Schale trifft und von dieser nach oben reflektiert wird.
- Mikro-LED-Pixeleinheit nach
Anspruch 1 , wobei die erste reflektierende Struktur mindestens eine erste reflektierende Schicht und die zweite reflektierende Struktur mindestens eine zweite reflektierende Schicht umfasst, wobei das Reflexionsvermögen der ersten reflektierenden Schicht oder der zweiten reflektierenden Schicht über 60 % liegt. - Mikro-LED-Pixeleinheit nach
Anspruch 2 , wobei ein Material der ersten reflektierenden Schicht oder der zweiten reflektierenden Schicht eines oder mehrere von Rh, Al, Ag oder Au umfasst. - Mikro-LED-Pixeleinheit nach
Anspruch 2 , wobei die erste reflektierende Struktur zwei erste reflektierende Schichten umfasst und die Brechungsindizes der beiden ersten reflektierenden Schichten unterschiedlich sind, und wobei die zweite reflektierende Struktur zwei zweite reflektierende Schichten umfasst und die Brechungsindizes der beiden zweiten reflektierende Schichten unterschiedlich sind. - Mikro-LED-Pixeleinheit nach
Anspruch 4 , wobei die beiden ersten reflektierenden Schichten jeweils SiO2 bzw. Ti3O5 umfassen und die beiden zweiten reflektierenden Schichten jeweils SiO2 bzw. Ti3O5 umfassen. - Mikro-LED-Pixeleinheit nach
Anspruch 2 , wobei die erste reflektierende Struktur ferner eine erste transparente Schicht auf der ersten reflektierenden Schicht aufweist und die zweite reflektierende Struktur ferner eine zweite transparente Schicht auf der zweiten reflektierenden Schicht aufweist. - Mikro-LED-Pixeleinheit nach
Anspruch 6 , wobei die erste transparente Schicht eines oder mehrere von Indiumzinnoxid (ITO) oder SiO2 umfasst und die zweite transparente Schicht eines oder mehrere von ITO oder SiO2 umfasst. - Mikro-LED-Pixeleinheit nach
Anspruch 1 , wobei die erste Farb-LED-Struktur ferner eine erste untere leitende Kontaktschicht und eine erste obere leitende Kontaktschicht aufweist und die zweite Farb-LED-Struktur ferner eine zweite untere leitende Kontaktschicht und eine zweite obere leitende Kontaktschicht aufweist; wobei die erste lichtemittierende Schicht zwischen der ersten unteren leitenden Kontaktschicht und der ersten oberen leitenden Kontaktschicht liegt und die zweite lichtemittierende Schicht zwischen der zweiten unteren leitenden Kontaktschicht und der zweiten oberen leitenden Kontaktschicht liegt; wobei die erste untere leitende Kontaktschicht mit dem IC-Substrat über die erste reflektierende Struktur und die erste Bindungsmetallschicht über einen ersten Kontaktpfad elektrisch verbunden ist, und die zweite untere leitende Kontaktschicht mit dem IC-Substrat über einen zweiten Kontaktpfad elektrisch verbunden ist; und wobei eine Kante der ersten oberen leitenden Kontaktschicht mit der oberen Elektrodenschicht in Kontakt steht und eine obere Oberfläche der zweiten oberen leitenden Kontaktschicht mit der oberen Elektrodenschicht in Kontakt steht ist. - Mikro-LED-Pixeleinheit nach
Anspruch 1 , ferner umfassend eine dritte reflektierende Struktur, die auf einer Oberseite der ersten lichtemittierenden Schicht gebildet ist, und eine vierte reflektierende Struktur, die auf einer Oberseite der zweiten lichtemittierenden Schicht gebildet ist. - Mikro-LED-Pixeleinheit nach
Anspruch 1 , ferner umfassend eine Mikrolinse, die über der oberen Elektrodenschicht gebildet ist. - Mikro-LED-Pixeleinheit nach
Anspruch 10 , ferner umfassend einen Abstandshalter, der zwischen der Mikrolinse und der oberen Elektrodenschicht gebildet ist. - Mikro-LED-Pixeleinheit nach
Anspruch 11 , wobei ein Material des Abstandshalters Siliziumoxid umfasst. - Mikro-LED-Pixeleinheit nach
Anspruch 10 , wobei eine seitliche Abmessung der Mikrolinse größer ist als die eines aktiven emittierenden Bereichs der ersten LED-Struktur und die seitliche Abmessung der Mikrolinse größer ist als die eines aktiven emittierenden Bereichs der zweiten LED-Struktur. - Mikro-LED-Pixeleinheit nach
Anspruch 1 , wobei die erste Farb-LED-Struktur und die zweite Farb-LED-Struktur die gleiche seitliche Abmessung haben. - Mikro-LED-Pixeleinheit nach
Anspruch 1 , wobei die erste Farb-LED-Struktur und die zweite Farb-LED-Struktur die gleiche Mittelachse haben. - Mikro-LED-Pixeleinheit nach
Anspruch 2 , wobei eine Dicke der mindestens einen ersten reflektierenden Schicht in einem Bereich von 5 nm bis 10 nm liegt und eine Dicke der mindestens einen zweiten reflektierenden Schicht in einem Bereich von 5 nm bis 10 nm liegt, und wobei eine Dicke der ersten Farb-LED-Struktur nicht mehr als 300 nm und eine Dicke der zweiten Farb-LED-Struktur nicht mehr als 300 nm beträgt.
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PCT/US2021/035742 WO2021247894A1 (en) | 2020-06-03 | 2021-06-03 | Systems and methods for multi-color led pixel unit with horizontal light emission |
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- 2021-06-03 DE DE21818011.5T patent/DE21818011T1/de active Pending
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2024
- 2024-03-07 US US18/599,167 patent/US20240258294A1/en active Pending
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AU2021282566A1 (en) | 2023-02-02 |
US20240258294A1 (en) | 2024-08-01 |
US20210384182A1 (en) | 2021-12-09 |
EP4162538A1 (de) | 2023-04-12 |
WO2021247894A1 (en) | 2021-12-09 |
TW202228111A (zh) | 2022-07-16 |
JP2023527963A (ja) | 2023-07-03 |
KR20230022943A (ko) | 2023-02-16 |
US11967589B2 (en) | 2024-04-23 |
CN115843393A (zh) | 2023-03-24 |
EP4162538A4 (de) | 2024-09-04 |
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