KR20210023694A - 복수의 디바이스 칩의 제조 방법 - Google Patents

복수의 디바이스 칩의 제조 방법 Download PDF

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Publication number
KR20210023694A
KR20210023694A KR1020200095527A KR20200095527A KR20210023694A KR 20210023694 A KR20210023694 A KR 20210023694A KR 1020200095527 A KR1020200095527 A KR 1020200095527A KR 20200095527 A KR20200095527 A KR 20200095527A KR 20210023694 A KR20210023694 A KR 20210023694A
Authority
KR
South Korea
Prior art keywords
workpiece
wafer
laser beam
hole
grinding
Prior art date
Application number
KR1020200095527A
Other languages
English (en)
Korean (ko)
Inventor
유야 마츠오카
Original Assignee
가부시기가이샤 디스코
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시기가이샤 디스코 filed Critical 가부시기가이샤 디스코
Publication of KR20210023694A publication Critical patent/KR20210023694A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
KR1020200095527A 2019-08-23 2020-07-30 복수의 디바이스 칩의 제조 방법 KR20210023694A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019152628A JP7358011B2 (ja) 2019-08-23 2019-08-23 複数のデバイスチップの製造方法
JPJP-P-2019-152628 2019-08-23

Publications (1)

Publication Number Publication Date
KR20210023694A true KR20210023694A (ko) 2021-03-04

Family

ID=74676087

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020200095527A KR20210023694A (ko) 2019-08-23 2020-07-30 복수의 디바이스 칩의 제조 방법

Country Status (4)

Country Link
JP (1) JP7358011B2 (ja)
KR (1) KR20210023694A (ja)
CN (1) CN112420608A (ja)
TW (1) TW202109640A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102021123711A1 (de) 2020-09-29 2022-03-31 Samsung Electronics Co., Ltd. Testverfahren von Speichervorrichtung implementiert in Multi-Chip-Packages (MCP) und Herstellungsverfahren eines MCP umfassend das Testverfahren

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006012902A (ja) 2004-06-22 2006-01-12 Disco Abrasive Syst Ltd ウエーハの加工方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004259846A (ja) * 2003-02-25 2004-09-16 Ogura Jewel Ind Co Ltd 基板上形成素子の分離方法
US7648891B2 (en) * 2006-12-22 2010-01-19 International Business Machines Corporation Semiconductor chip shape alteration
JP5558129B2 (ja) * 2010-02-05 2014-07-23 株式会社ディスコ 光デバイスウエーハの加工方法
JP2012059859A (ja) * 2010-09-08 2012-03-22 Disco Abrasive Syst Ltd 半導体デバイス
JP5619562B2 (ja) * 2010-10-18 2014-11-05 株式会社ディスコ 光デバイスウエーハの分割方法
JP6053381B2 (ja) * 2012-08-06 2016-12-27 株式会社ディスコ ウェーハの分割方法
JP6057616B2 (ja) * 2012-08-28 2017-01-11 株式会社ディスコ ウェーハの加工方法
JP2015201585A (ja) * 2014-04-10 2015-11-12 株式会社ディスコ ウェーハの加工方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006012902A (ja) 2004-06-22 2006-01-12 Disco Abrasive Syst Ltd ウエーハの加工方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102021123711A1 (de) 2020-09-29 2022-03-31 Samsung Electronics Co., Ltd. Testverfahren von Speichervorrichtung implementiert in Multi-Chip-Packages (MCP) und Herstellungsverfahren eines MCP umfassend das Testverfahren

Also Published As

Publication number Publication date
TW202109640A (zh) 2021-03-01
JP7358011B2 (ja) 2023-10-10
JP2021034535A (ja) 2021-03-01
CN112420608A (zh) 2021-02-26

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