KR20210015762A - 실리콘 웨이퍼의 세정방법 - Google Patents

실리콘 웨이퍼의 세정방법 Download PDF

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Publication number
KR20210015762A
KR20210015762A KR1020207030653A KR20207030653A KR20210015762A KR 20210015762 A KR20210015762 A KR 20210015762A KR 1020207030653 A KR1020207030653 A KR 1020207030653A KR 20207030653 A KR20207030653 A KR 20207030653A KR 20210015762 A KR20210015762 A KR 20210015762A
Authority
KR
South Korea
Prior art keywords
cleaning
silicon wafer
oxide film
chemical oxide
evaluation
Prior art date
Application number
KR1020207030653A
Other languages
English (en)
Korean (ko)
Inventor
타츠오 아베
켄사쿠 이가라시
마사아키 오세키
Original Assignee
신에쯔 한도타이 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 신에쯔 한도타이 가부시키가이샤 filed Critical 신에쯔 한도타이 가부시키가이샤
Publication of KR20210015762A publication Critical patent/KR20210015762A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
KR1020207030653A 2018-05-29 2019-03-27 실리콘 웨이퍼의 세정방법 KR20210015762A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2018-101949 2018-05-29
JP2018101949A JP6729632B2 (ja) 2018-05-29 2018-05-29 シリコンウェーハの洗浄方法
PCT/JP2019/013054 WO2019230164A1 (ja) 2018-05-29 2019-03-27 シリコンウェーハの洗浄方法

Publications (1)

Publication Number Publication Date
KR20210015762A true KR20210015762A (ko) 2021-02-10

Family

ID=68698054

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020207030653A KR20210015762A (ko) 2018-05-29 2019-03-27 실리콘 웨이퍼의 세정방법

Country Status (5)

Country Link
JP (1) JP6729632B2 (zh)
KR (1) KR20210015762A (zh)
CN (1) CN112204712A (zh)
TW (1) TWI795547B (zh)
WO (1) WO2019230164A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202137529A (zh) 2019-11-18 2021-10-01 日商索尼半導體解決方案公司 固體攝像裝置及電子機器
JP7480738B2 (ja) 2021-04-13 2024-05-10 信越半導体株式会社 シリコンウェーハの洗浄方法及び自然酸化膜付きシリコンウェーハの製造方法
JP2023048696A (ja) * 2021-09-28 2023-04-07 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0917765A (ja) 1995-04-28 1997-01-17 Shin Etsu Handotai Co Ltd 半導体基板の洗浄装置および洗浄方法
JPH09260328A (ja) 1996-03-19 1997-10-03 Shin Etsu Handotai Co Ltd シリコンウエーハ表面の処理方法
JP2002329691A (ja) 2001-04-27 2002-11-15 Shin Etsu Handotai Co Ltd シリコンウェーハの洗浄方法
JP2006208314A (ja) 2005-01-31 2006-08-10 Shin Etsu Handotai Co Ltd シリコン単結晶ウエーハの結晶欠陥の評価方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6436723B1 (en) * 1998-10-16 2002-08-20 Kabushiki Kaisha Toshiba Etching method and etching apparatus method for manufacturing semiconductor device and semiconductor device
JP3538114B2 (ja) * 1999-09-30 2004-06-14 野村マイクロ・サイエンス株式会社 表面付着汚染物質の除去方法及び除去装置
JP4292872B2 (ja) * 2003-05-29 2009-07-08 信越半導体株式会社 シリコンエピタキシャルウェーハの製造方法
JP4933071B2 (ja) * 2005-09-08 2012-05-16 コバレントマテリアル株式会社 シリコンウエハの洗浄方法
KR100841994B1 (ko) * 2006-12-20 2008-06-27 주식회사 실트론 실리콘 웨이퍼의 산화막 제조 방법
KR100931196B1 (ko) * 2007-10-10 2009-12-10 주식회사 실트론 실리콘 웨이퍼 세정 방법
KR20110036990A (ko) * 2009-10-05 2011-04-13 주식회사 엘지실트론 균일 산화막 형성 방법 및 세정 방법
JP2013251461A (ja) * 2012-06-01 2013-12-12 Shin Etsu Handotai Co Ltd 半導体ウェーハの洗浄方法
JP2015041753A (ja) * 2013-08-23 2015-03-02 株式会社東芝 ウェハの洗浄方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0917765A (ja) 1995-04-28 1997-01-17 Shin Etsu Handotai Co Ltd 半導体基板の洗浄装置および洗浄方法
JPH09260328A (ja) 1996-03-19 1997-10-03 Shin Etsu Handotai Co Ltd シリコンウエーハ表面の処理方法
JP2002329691A (ja) 2001-04-27 2002-11-15 Shin Etsu Handotai Co Ltd シリコンウェーハの洗浄方法
JP2006208314A (ja) 2005-01-31 2006-08-10 Shin Etsu Handotai Co Ltd シリコン単結晶ウエーハの結晶欠陥の評価方法

Also Published As

Publication number Publication date
JP2019207923A (ja) 2019-12-05
TWI795547B (zh) 2023-03-11
TW202004885A (zh) 2020-01-16
WO2019230164A1 (ja) 2019-12-05
JP6729632B2 (ja) 2020-07-22
CN112204712A (zh) 2021-01-08

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