KR20190103001A - 위상 시프트 마스크 블랭크, 위상 시프트 마스크의 제조 방법, 및 표시 장치의 제조 방법 - Google Patents

위상 시프트 마스크 블랭크, 위상 시프트 마스크의 제조 방법, 및 표시 장치의 제조 방법 Download PDF

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Publication number
KR20190103001A
KR20190103001A KR1020190016666A KR20190016666A KR20190103001A KR 20190103001 A KR20190103001 A KR 20190103001A KR 1020190016666 A KR1020190016666 A KR 1020190016666A KR 20190016666 A KR20190016666 A KR 20190016666A KR 20190103001 A KR20190103001 A KR 20190103001A
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KR
South Korea
Prior art keywords
phase shift
film
mask
pattern
shift film
Prior art date
Application number
KR1020190016666A
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English (en)
Korean (ko)
Inventor
마사루 타나베
게이시 아사까와
Original Assignee
호야 가부시키가이샤
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Application filed by 호야 가부시키가이샤 filed Critical 호야 가부시키가이샤
Publication of KR20190103001A publication Critical patent/KR20190103001A/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Vapour Deposition (AREA)
  • Liquid Crystal (AREA)
KR1020190016666A 2018-02-27 2019-02-13 위상 시프트 마스크 블랭크, 위상 시프트 마스크의 제조 방법, 및 표시 장치의 제조 방법 KR20190103001A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2018032861 2018-02-27
JPJP-P-2018-032861 2018-02-27
JPJP-P-2018-239363 2018-12-21
JP2018239363A JP7073246B2 (ja) 2018-02-27 2018-12-21 位相シフトマスクブランク、位相シフトマスクの製造方法、及び表示装置の製造方法

Publications (1)

Publication Number Publication Date
KR20190103001A true KR20190103001A (ko) 2019-09-04

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KR1020190016666A KR20190103001A (ko) 2018-02-27 2019-02-13 위상 시프트 마스크 블랭크, 위상 시프트 마스크의 제조 방법, 및 표시 장치의 제조 방법

Country Status (3)

Country Link
JP (1) JP7073246B2 (ja)
KR (1) KR20190103001A (ja)
TW (1) TWI784131B (ja)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7413092B2 (ja) * 2020-03-12 2024-01-15 Hoya株式会社 フォトマスクブランク、フォトマスクブランクの製造方法、フォトマスクの製造方法及び表示装置の製造方法
JP7381374B2 (ja) * 2020-03-16 2023-11-15 アルバック成膜株式会社 マスクブランクス、位相シフトマスク、製造方法
JPWO2022230694A1 (ja) * 2021-04-30 2022-11-03

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160024204A (ko) 2014-08-25 2016-03-04 주식회사 에스앤에스텍 평판 디스플레이용 블랭크 마스크 및 이를 이용한 포토마스크 제조 방법
JP2017167512A (ja) 2016-03-16 2017-09-21 エスアンドエス テック カンパニー リミテッド 位相反転ブランクマスク及びフォトマスク

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2837803B2 (ja) * 1993-03-26 1998-12-16 ホーヤ株式会社 位相シフトマスク及び位相シフトマスクブランク
JP2002062632A (ja) 2000-08-21 2002-02-28 Shin Etsu Chem Co Ltd 位相シフトマスクブランク、位相シフトマスク及びこれらの製造方法
JP4711317B2 (ja) 2000-09-12 2011-06-29 Ｈｏｙａ株式会社 位相シフトマスクブランクの製造方法、位相シフトマスクの製造方法、及びパターン転写方法
DE10126575C1 (de) 2001-05-31 2002-10-10 Infineon Technologies Ag Plasmaätzprozess für MoSiN-Schichten auf Halbton-Phasenmasken auf der Basis von Monofluormethan und Sauerstoff enthaltenden Gasgemischen
JP5175932B2 (ja) * 2008-06-25 2013-04-03 Ｈｏｙａ株式会社 位相シフトマスクブランクおよび位相シフトマスク
JP5644293B2 (ja) 2010-09-10 2014-12-24 信越化学工業株式会社 遷移金属ケイ素系材料膜の設計方法
JP6101646B2 (ja) 2013-02-26 2017-03-22 Hoya株式会社 位相シフトマスクブランク及びその製造方法、位相シフトマスク及びその製造方法、並びに表示装置の製造方法
JP6324756B2 (ja) * 2013-03-19 2018-05-16 Hoya株式会社 位相シフトマスクブランク及びその製造方法、位相シフトマスクの製造方法、並びに表示装置の製造方法
JP5767357B1 (ja) * 2014-03-26 2015-08-19 Hoya株式会社 マスクブランク用基板、マスクブランク及び転写用マスク、並びにそれらの製造方法
JP6396118B2 (ja) 2014-08-20 2018-09-26 Hoya株式会社 位相シフトマスクブランク及びその製造方法、並びに位相シフトマスクの製造方法
JP6502143B2 (ja) 2015-03-27 2019-04-17 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法
JP6544300B2 (ja) 2015-08-31 2019-07-17 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク、その製造方法、及びハーフトーン位相シフト型フォトマスク
JP6437602B2 (ja) 2017-07-28 2018-12-12 Hoya株式会社 マスクブランク、転写用マスクの製造方法、および半導体デバイスの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160024204A (ko) 2014-08-25 2016-03-04 주식회사 에스앤에스텍 평판 디스플레이용 블랭크 마스크 및 이를 이용한 포토마스크 제조 방법
JP2017167512A (ja) 2016-03-16 2017-09-21 エスアンドエス テック カンパニー リミテッド 位相反転ブランクマスク及びフォトマスク

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TWI784131B (zh) 2022-11-21
JP7073246B2 (ja) 2022-05-23
JP2019148789A (ja) 2019-09-05
TW201937268A (zh) 2019-09-16

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