KR20190087334A - 웨이퍼를 처리하는 방법 - Google Patents

웨이퍼를 처리하는 방법 Download PDF

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Publication number
KR20190087334A
KR20190087334A KR1020190005697A KR20190005697A KR20190087334A KR 20190087334 A KR20190087334 A KR 20190087334A KR 1020190005697 A KR1020190005697 A KR 1020190005697A KR 20190005697 A KR20190005697 A KR 20190005697A KR 20190087334 A KR20190087334 A KR 20190087334A
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KR
South Korea
Prior art keywords
wafer
protective film
opposite
applying
buffer layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020190005697A
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English (en)
Korean (ko)
Inventor
칼 하인츠 프리바서
히토시 호시노
디트마르 메이어
Original Assignee
가부시기가이샤 디스코
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시기가이샤 디스코 filed Critical 가부시기가이샤 디스코
Publication of KR20190087334A publication Critical patent/KR20190087334A/ko
Priority to KR1020210025560A priority Critical patent/KR102482627B1/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H01L21/78—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • H01L21/02013—
    • H01L21/02016—
    • H01L21/56—
    • H01L21/67132—
    • H01L21/6836—
    • H01L21/76—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H10P72/7404—Wafer tapes, e.g. grinding or dicing support tapes the wafer tape being a laminate of three or more layers, e.g. including additional layers beyond a base layer and an uppermost adhesive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/124—Preparing bulk and homogeneous wafers by processing the backside of the wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H10P72/742—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Dicing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Laser Beam Processing (AREA)
KR1020190005697A 2018-01-16 2019-01-16 웨이퍼를 처리하는 방법 Ceased KR20190087334A (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020210025560A KR102482627B1 (ko) 2018-01-16 2021-02-25 웨이퍼를 처리하는 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102018200656.3 2018-01-16
DE102018200656.3A DE102018200656A1 (de) 2018-01-16 2018-01-16 Verfahren zum Bearbeiten eines Wafers

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020210025560A Division KR102482627B1 (ko) 2018-01-16 2021-02-25 웨이퍼를 처리하는 방법

Publications (1)

Publication Number Publication Date
KR20190087334A true KR20190087334A (ko) 2019-07-24

Family

ID=67068447

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020190005697A Ceased KR20190087334A (ko) 2018-01-16 2019-01-16 웨이퍼를 처리하는 방법
KR1020210025560A Active KR102482627B1 (ko) 2018-01-16 2021-02-25 웨이퍼를 처리하는 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020210025560A Active KR102482627B1 (ko) 2018-01-16 2021-02-25 웨이퍼를 처리하는 방법

Country Status (7)

Country Link
US (2) US11133219B2 (enExample)
JP (2) JP7056844B2 (enExample)
KR (2) KR20190087334A (enExample)
CN (1) CN110047745B (enExample)
DE (1) DE102018200656A1 (enExample)
SG (2) SG10202109757WA (enExample)
TW (1) TWI713976B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210015716A (ko) * 2019-08-01 2021-02-10 가부시기가이샤 디스코 기판 처리 방법
KR20230037468A (ko) * 2021-09-09 2023-03-16 가부시기가이샤 디스코 기판 처리 방법

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DE102017208405B4 (de) 2017-05-18 2024-05-02 Disco Corporation Verfahren zum Bearbeiten eines Wafers und Schutzfolie
JP7229844B2 (ja) * 2019-04-25 2023-02-28 株式会社ディスコ ウエーハの加工方法
JP7303704B2 (ja) * 2019-08-27 2023-07-05 株式会社ディスコ ウェーハの分割方法
JP7341606B2 (ja) * 2019-09-11 2023-09-11 株式会社ディスコ ウェーハの加工方法
JP7341607B2 (ja) * 2019-09-11 2023-09-11 株式会社ディスコ ウェーハの加工方法
JP7396863B2 (ja) * 2019-11-06 2023-12-12 株式会社ディスコ 保護部材の形成方法
JP7511976B2 (ja) * 2020-06-10 2024-07-08 株式会社ディスコ ウェーハの加工方法
DE102020210104B4 (de) 2020-08-10 2025-02-06 Disco Corporation Verfahren zum bearbeiten eines substrats
JP7529478B2 (ja) * 2020-08-13 2024-08-06 株式会社ディスコ ウェーハの加工方法
JP7463036B2 (ja) * 2020-08-21 2024-04-08 株式会社ディスコ シート貼着方法及びシート貼着装置
CN114551248A (zh) * 2022-02-16 2022-05-27 江苏芯德半导体科技有限公司 一种晶圆级芯片封装工艺
JP7839665B2 (ja) * 2022-03-17 2026-04-02 リンテック株式会社 被着体処理方法
JP2023176852A (ja) * 2022-06-01 2023-12-13 株式会社ディスコ 被加工物の研削方法、デバイスチップの製造方法
DE102023203941A1 (de) * 2023-04-27 2024-10-31 Carl Zeiss Smt Gmbh Verfahren zur Nachbearbeitung und zur Handhabung von MEMS-Chips
DE102023208767A1 (de) * 2023-09-11 2025-03-13 Disco Corporation Werkstückunterstützung

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JPS5823591B2 (ja) 1979-03-22 1983-05-16 株式会社日立国際電気 移動体の位置検知装置
DE10121556A1 (de) * 2001-05-03 2002-11-14 Infineon Technologies Ag Verfahren zum Rückseitenschleifen von Wafern
JP3892703B2 (ja) * 2001-10-19 2007-03-14 富士通株式会社 半導体基板用治具及びこれを用いた半導体装置の製造方法
JP2005191297A (ja) 2003-12-25 2005-07-14 Jsr Corp ダイシングフィルム及び半導体ウェハの切断方法
JP2005191296A (ja) 2003-12-25 2005-07-14 Jsr Corp バックグラインドテープ及び半導体ウェハの研磨方法
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210015716A (ko) * 2019-08-01 2021-02-10 가부시기가이샤 디스코 기판 처리 방법
KR20230037468A (ko) * 2021-09-09 2023-03-16 가부시기가이샤 디스코 기판 처리 방법

Also Published As

Publication number Publication date
JP7458964B2 (ja) 2024-04-01
JP2021048407A (ja) 2021-03-25
JP2019125785A (ja) 2019-07-25
TWI713976B (zh) 2020-12-21
US11626324B2 (en) 2023-04-11
KR20210025034A (ko) 2021-03-08
CN110047745B (zh) 2023-11-03
DE102018200656A1 (de) 2019-07-18
TW201933513A (zh) 2019-08-16
CN110047745A (zh) 2019-07-23
US20210183704A1 (en) 2021-06-17
SG10201900223QA (en) 2019-08-27
KR102482627B1 (ko) 2022-12-28
JP7056844B2 (ja) 2022-04-19
US20190221480A1 (en) 2019-07-18
SG10202109757WA (en) 2021-10-28
US11133219B2 (en) 2021-09-28

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Decision identifier: 2021101000490

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000