KR20190001947A - 웨이퍼 구조체 - Google Patents

웨이퍼 구조체 Download PDF

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Publication number
KR20190001947A
KR20190001947A KR1020180074844A KR20180074844A KR20190001947A KR 20190001947 A KR20190001947 A KR 20190001947A KR 1020180074844 A KR1020180074844 A KR 1020180074844A KR 20180074844 A KR20180074844 A KR 20180074844A KR 20190001947 A KR20190001947 A KR 20190001947A
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KR
South Korea
Prior art keywords
sides
scribe lines
dies
width
process patterns
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KR1020180074844A
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English (en)
Korean (ko)
Inventor
춘-썬 린
쿠-체 우
츠-잉 츠엔
밍-청 처우
Original Assignee
시트로닉스 테크놀로지 코퍼레이션
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Application filed by 시트로닉스 테크놀로지 코퍼레이션 filed Critical 시트로닉스 테크놀로지 코퍼레이션
Publication of KR20190001947A publication Critical patent/KR20190001947A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Dicing (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
KR1020180074844A 2017-06-28 2018-06-28 웨이퍼 구조체 KR20190001947A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762525904P 2017-06-28 2017-06-28
US62/525,904 2017-06-28

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020200023448A Division KR20200023625A (ko) 2017-06-28 2020-02-26 웨이퍼 구조체

Publications (1)

Publication Number Publication Date
KR20190001947A true KR20190001947A (ko) 2019-01-07

Family

ID=64802515

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020180074844A KR20190001947A (ko) 2017-06-28 2018-06-28 웨이퍼 구조체
KR1020200023448A KR20200023625A (ko) 2017-06-28 2020-02-26 웨이퍼 구조체

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020200023448A KR20200023625A (ko) 2017-06-28 2020-02-26 웨이퍼 구조체

Country Status (3)

Country Link
KR (2) KR20190001947A (zh)
CN (1) CN109148559A (zh)
TW (1) TWI714865B (zh)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2652015B2 (ja) * 1987-04-07 1997-09-10 セイコーエプソン株式会社 半導体装置
JPH07221414A (ja) * 1994-02-08 1995-08-18 Fuji Xerox Co Ltd 半導体回路基板
JP2005340557A (ja) * 2004-05-28 2005-12-08 Kyocera Corp 半導体ウェハ及び半導体チップの製造方法
JP4377300B2 (ja) * 2004-06-22 2009-12-02 Ｎｅｃエレクトロニクス株式会社 半導体ウエハおよび半導体装置の製造方法
JP2007053140A (ja) * 2005-08-15 2007-03-01 Seiko Epson Corp 半導体装置
JP2007214243A (ja) * 2006-02-08 2007-08-23 Renesas Technology Corp 半導体装置の製造方法
US8502324B2 (en) * 2009-10-19 2013-08-06 Freescale Semiconductor, Inc. Semiconductor wafer having scribe lane alignment marks for reducing crack propagation
KR101102658B1 (ko) * 2009-11-27 2012-01-04 주식회사 하이닉스반도체 웨이퍼 및 그 형성 방법
CN103176350A (zh) * 2011-12-26 2013-06-26 和舰科技(苏州)有限公司 一种使晶圆上芯片数量最大化的光罩制作方法
US8952497B2 (en) * 2012-09-14 2015-02-10 Taiwan Semiconductor Manufacturing Company, Ltd. Scribe lines in wafers
JP2014195040A (ja) * 2013-02-27 2014-10-09 Mitsuboshi Diamond Industrial Co Ltd Ｌｅｄ素子の製造方法、ｌｅｄ素子製造用ウェハ基材およびｌｅｄ素子の製造装置
JP6696122B2 (ja) * 2015-07-10 2020-05-20 住友電気工業株式会社 ワイドバンドギャップ半導体装置の製造方法、ワイドバンドギャップ半導体ウエハおよびワイドバンドギャップ半導体チップ

Also Published As

Publication number Publication date
KR20200023625A (ko) 2020-03-05
CN109148559A (zh) 2019-01-04
TWI714865B (zh) 2021-01-01
TW201905999A (zh) 2019-02-01

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Effective date: 20220316