KR20180123157A - Optical components and laser processing machines - Google Patents

Abstract

A fluorine film, a Ge film, and a diamond like carbon film (DLC film) are laminated in this order on at least one surface of a Ge substrate from the Ge substrate side. The film thickness of the fluoride film is preferably 500 nm to 950 nm, and the thickness of the Ge film is preferably 50 nm to 150 nm, and the film thickness of the DLC film is preferably 50 nm to 300 nm. The fluoride film is preferably made of at least one selected from the group consisting of YF ₃ , YbF ₃ and MgF ₂ .

Description

Optical components and laser processing machines

The present invention relates to an optical component and a laser processing machine equipped with the optical component.

The CO ₂ laser oscillating at a wavelength of 9 m to 11 m can be used for perforating a printed wiring board incorporated in an electronic device represented by a smart phone because high output oscillation is possible or absorption rate of the resin is high.

In the laser processing machine for perforation processing, since the condensing lens is provided above the processing area, there is a problem that contamination is adhered to the condensing lens by the resin vapor, resin sputter, copper sputter, or the like generated during processing. Conventionally, in order to prevent this, an optical component called a protective window (protection window) is disposed between the condenser lens and the workpiece to prevent damage or deterioration of the condenser lens. The main performance required for the protective window is that it is highly permeable to the CO ₂ laser, which is the infrared light, and has abrasion resistance to withstand the wiping of the attached dust or spatter.

Patent Document 1 discloses an infrared transmitting structure in which a first Y ₂ O ₃ layer, a YF ₃ layer, a second Y ₂ O ₃ layer and a diamond-like carbon layer are sequentially laminated on the surface side of a ZnS substrate, A ZnS, Al ₂ O ₃ , or Y ₂ O ₃ layer having a thickness of 10 to 200 nm, a Ge layer having a thickness of 100 to 750 nm, a diamond-like carbon layer having a thickness of 500 to 2000 nm An infrared transmitting structure is proposed.

In Patent Document 1, it is considered that an infrared transmitting structure having superior impact resistance and durability and excellent in peeling resistance and transmittance is realized as compared with conventional infrared transmitting structures.

Japanese Patent Application Laid-Open No. 2008-268277

However, the infrared transmitting structure proposed in Patent Document 1 has a problem that sufficient optical performance can not be obtained when it is used as an optical component of a laser processing machine, since the diamond-like carbon layer is formed on the outermost layer and thus has good abrasion resistance. When laser processing is carried out with a laser processing machine equipped with such an optical component, a temperature distribution is generated in the ZnS substrate due to the absorption of the infrared light by the optical component, and the transfer precision of the laser called the thermal lens effect is lowered. Particularly, in a laser processing machine for perforation processing in which an optical component is mounted as a protection window, a heat lens effect is generated by the absorption of infrared light by the optical component, and processing of a desired hole position and hole shape can not be realized, There was a problem that this occurred. In the laser machining apparatus for drilling, in order to prevent such a problem, the speed of laser machining is limited to realize the required machining accuracy, but the productivity is lowered due to the limitation of the machining speed.

An object of the present invention is to provide an optical component having high transmittance to CO ₂ laser light and excellent abrasion resistance.

The present invention is an optical component characterized in that a fluoride film, a Ge film, and a diamond like carbon film (DLC film) are laminated in this order on at least one surface of a Ge substrate from the Ge substrate side.

According to the present invention, it is possible to provide an optical component having a high transmittance to CO ₂ laser light and excellent abrasion resistance. Further, the laser processing machine equipped with the optical component of the present invention can perform high-precision machining even at high speed processing.

1 is a schematic cross-sectional view showing a configuration of an optical component according to a first embodiment.
2 is a schematic cross-sectional view showing another configuration of the optical component according to the first embodiment.
3 is a schematic cross-sectional view showing the configuration of the optical component according to the second embodiment.
4 is a schematic diagram showing a configuration of a laser machining apparatus according to Embodiment 3;
5 is a diagram showing the wavelength dependency of the transmittance in the optical component of Example 1. Fig.
6 is a graph showing the wavelength dependency of the transmittance in the optical component of Comparative Example 1. Fig.
7 is a diagram showing the wavelength dependence of transmittance in the optical component of Example 3. Fig.
8 is a diagram showing the wavelength dependency of the transmittance in the optical component of Example 4. Fig.
9 is a diagram showing the wavelength dependency of the transmittance in the optical component of Example 5. Fig.
10 is a diagram showing the wavelength dependency of the transmittance in the optical component of Example 6. Fig.
11 is a diagram showing the wavelength dependence of the transmittance in the optical component of Example 7. Fig.
12 is a diagram showing the wavelength dependence of the transmittance in the optical component of the eighth embodiment.

Embodiment 1

An optical component according to Embodiment 1 of the present invention is characterized in that a fluoride film, a Ge film, and a diamond like carbon film (DLC film) are laminated in this order on at least one surface of a Ge substrate from the Ge substrate side .

1 is a schematic cross-sectional view showing a configuration of an optical component according to a first embodiment. 1, the optical component includes a fluoride film 11 laminated on a Ge substrate 10, a Ge film 12 laminated on the fluoride film 11, A multi-layered film 14 composed of a stacked DLC film 13 is provided on both sides of the Ge substrate 10. 2 is a schematic cross-sectional view showing another configuration of the optical component according to the first embodiment. 2, the optical component includes a fluoride film 11 laminated on a Ge substrate 10, a Ge film 12 laminated on the fluoride film 11, A multilayer film 14 composed of a stacked DLC film 13 is provided on one side of the Ge substrate 10 and an antireflection film 15 different from the multilayer film 14 is provided on the other side of the Ge substrate 10 have.

In the optical component of Patent Document 1, ZnS is used as a substrate. However, when ZnS having a low thermal conductivity is used as a substrate, a temperature distribution is generated in the substrate when laser processing is continuously performed. If such a temperature distribution occurs, the machining accuracy is lowered due to the heat lens effect, so that ZnS is not suitable as a substrate for an optical component for a laser processing machine.

Thus, in the optical component of the present invention, Ge having a high thermal conductivity is used for the substrate. The Ge substrate 10 may be doped with an element other than Ge, without affecting optical performance or mechanical characteristics. The shape of the Ge substrate 10 is not limited. For example, the protective window for a laser processing machine is preferably a disk having a diameter of 80 mm to 140 mm and a thickness of 2 mm to 10 mm.

The fluoride film 11 laminated on the Ge substrate 10 may be any one containing at least one kind of fluoride such as YF ₃ , YbF ₃ , MgF ₂ , BaF ₂ or CaF ₂ , It is preferably composed of at least one species selected from the group consisting of YF ₃ , YbF ₃ and MgF ₂ from the viewpoint of excellent permeability.

When the film thickness of the fluoride film 11 is large, the tensile stress becomes large. If the film thickness is excessively large, the film is damaged, for example, cracks are formed during film formation of the fluoride film 11, . On the other hand, if the film thickness of the fluoride film 11 becomes too small, the antireflection effect becomes difficult to obtain and the transmittance of the infrared light may be lowered. It is preferable that the film thickness of the fluoride film 11 is 500 nm to 950 nm in view of realizing a high transmittance with respect to infrared light while securing the adhesion of the film.

Since the Ge film 12 deposited on the fluoride film 11 has good adhesion with the DLC film 13, the adhesion of the DLC film 13 can be ensured by providing the Ge film 12. By arranging the Ge film 12 between the DLC film 13 having the compressive stress and the fluoride film 11 having the tensile stress, the stress balance in the entire multilayer film 14 is maintained, Thereby preventing a load from being applied between the fluoride film 11 and the Ge film 12 and between the fluoride film 11 and the Ge substrate 10. [

If the film thickness of the Ge film 12 is excessively large, it becomes difficult to maintain the balance of the stress in the entire multilayer film 14, so that the fluoride film 11 and the Ge film 12, and between the fluoride film 11 and Ge So that peeling easily occurs between the substrates 10. On the other hand, if the film thickness of the Ge film 12 becomes too small, the antireflection effect becomes difficult to obtain and the transmittance of the infrared light may be lowered. The film thickness of the Ge film 12 is preferably from 50 nm to 150 nm, more preferably from 100 nm to 130 nm, from the viewpoint of realizing a high transmittance to infrared light while securing the adhesion of the film.

The DLC film 13 laminated on the Ge film 12 is made of diamond-like carbon having high stability as a material and low reactivity with other materials. By providing such a DLC film 13 on the outermost surface of the optical member, it is possible to prevent the film from being damaged or corroded by dust or spatter generated during drilling of a printed board or the like. Moreover, since the diamond-like carbon has a high hardness and the adhesion of the sputter to the diamond-like carbon is weak, the optical member can be cleaned without concern for the occurrence of scratches, so that the sputter can be easily removed, · It can be reused.

If the film thickness of the DLC film 13 is excessively large, the absorption of the infrared light by the DLC film 13 is increased, and the transmittance of the infrared light is lowered, and the compressive stress is increased, and the film adhesion force is also lowered. On the other hand, if the film thickness of the DLC film 13 becomes too small, the base of the DLC film 13 may be affected at the time of abrasion and the original abrasion resistance of the DLC film 13 may not be exhibited. Considering these points, it is preferable that the film thickness of the DLC film 13 is 50 nm to 300 nm.

Unless the optical performance and mechanical characteristics of the multilayer film 14 are affected, the above-mentioned films may be doped with other elements, or a thin film other than the above-mentioned films may be formed.

The antireflection film 15 is composed of, for example, a YF ₃ film having a film thickness of 600 nm to 800 nm, a Ge film having a film thickness of 110 nm to 180 nm, and a Ge film having a film thickness of 50 nm to 800 nm And an MgF ₂ film having a thickness in this order. The antireflection film 15 is provided on one surface of the Ge substrate 10 serving as an incident surface of the laser beam so that the wavelength of the antireflection film 15 is 9.3 占 퐉 or 10.6 占it is possible to improve the transmittance in μm.

As the method of forming the multilayer film 14 and the antireflection film 15 in the optical component of the present invention, the type of the multilayer film 14 and the antireflection film 15 is not required if the film can be formed on the Ge substrate 10. As a generally known film forming method, a physical vapor deposition method (PVD method) such as a vacuum vapor deposition method or a sputtering method, and a chemical vapor deposition method (CVD method) such as a plasma CVD method can be mentioned. In the present invention, it is preferable to form the fluoride film 11, the Ge film 12 and the antireflection film 15 by a vacuum evaporation method in view of the excellent production efficiency in the case of film formation using a plurality of materials. Further, in the present invention, it is preferable to form the DLC film 13 by the plasma CVD method because the film composition and thickness can be controlled with high precision.

According to the first embodiment, it is possible to provide an optical component having a high transmittance and excellent abrasion resistance with respect to a CO ₂ laser beam having a wavelength of 9 m to 11 m.

Embodiment 2 Fig.

In the optical component according to Embodiment 2, a fluoride film, a Ge film, and a DLC film are laminated in this order on at least one surface of a Ge substrate from the Ge substrate side, and the fluoride film and the Ge film are not exposed and covered with the DLC film .

3 is a schematic cross-sectional view showing the configuration of the optical component according to the second embodiment. 3, the optical component includes a fluoride film 11 laminated on a Ge substrate 10, a Ge film 12 laminated on the fluoride film 11, a fluoride film 11 and Ge A multilayer film 20 composed of a fluoride film 11 and a DLC film 13 covering the Ge film 12 is provided on one side of the Ge substrate 10 so as not to expose the film 12, An antireflection film 15 is provided on the other surface of the Ge substrate 10. 3, the multilayered film 20 is provided on one side of the Ge substrate 10, but the multilayered film 20 may be provided on both sides of the Ge substrate 10.

The Ge substrate 10, the fluoride film 11, the Ge film 12, and the antireflection film 15 are the same as those described in the first embodiment, and a description thereof will be omitted.

The film thickness of the DLC film 13 formed on the upper surface of the Ge film 12 is preferably 50 nm to 300 nm as in the first embodiment. The film thickness of the DLC film 13 formed so that the fluoride film 11 and the Ge film 12 are not exposed on the side surface of the fluoride film 11 and on the side surface of the Ge film 12, The film thickness may be such that the film 12 is not exposed. Such a DLC film 13 can be formed by adjusting the size of the opening of the mask when the film is formed by sputtering using a mask. By covering the fluoride film 11 and the Ge film 12 of the optical component with the DLC film 13, it is possible to exhibit excellent corrosion resistance against gas generated at the time of processing.

According to the second embodiment, it is possible to provide an optical component which has a high transmittance to CO ₂ laser light, is excellent in wear resistance, and is not corroded by gas generated during processing.

Embodiment 3:

The laser machining apparatus according to the third embodiment is characterized by including the optical component according to the first or second embodiment.

4 is a schematic diagram showing a configuration of a laser machining apparatus according to Embodiment 3; 4, the laser processing machine includes a laser oscillator 30, a condenser lens 32 for condensing the laser beam 31 emitted from the laser oscillator 30, a condenser lens 32 and a printed wiring board And the protective window 34 disposed in the optical path of the laser beam 31 between the work piece 33 of the optical member 33. The optical component according to the above embodiment 1 or 2 is used as the protective window 34 . Here, the protective window 34 is provided such that the multilayer film 14 described in the first embodiment or the multilayer film 20 described in the second embodiment is directed toward the processing space side (the work 33 side). On the other hand, the configuration of the laser processing machine shown in Fig. 4 is an example, and the configuration is not limited to this configuration as long as it is constituted by a laser oscillator and an optical system.

The laser beam 31 emitted from the laser oscillator 30 is condensed by the condenser lens 32 and is transmitted through the protection window 34 and then irradiated onto the work 33 , Drilling processing becomes possible.

Since the optical component according to the first or second embodiment has a high transmittance with respect to the CO ₂ laser beam, by using this as the protective window 34, it is possible to prevent the thermal lens effect caused by laser absorption, It is possible to realize a laser processing machine capable of high-speed processing without causing deterioration of the laser beam. Since the protective window 34 is provided with the multilayer films 14 and 20 having the DLC film 13 on the outermost surface facing the working space side, Dust and spatter adhered to the surface of the substrate 34 can be easily removed. Generally, since the protective window 34 can only be dropped by about 100 mm from the workpiece 33, the protective window 34 is exposed to a large amount of sputter or dust during processing. Since the optical component described in Embodiment 2 is also excellent in corrosion resistance, it is possible to improve the service life of the optical component of the laser processing machine by using it as the protective window 34. [

According to the third embodiment, it is possible to provide a laser machining apparatus capable of improving machinability and high-speed machining without deteriorating machining accuracy.

Example

Hereinafter, the present invention will be described in more detail with reference to examples and comparative examples, but the present invention is not limited thereto.

[Example 1]

As the optical component, one side multi-film (MgF ₂ film (thickness: 500nm) / Ge film (film thickness: 80nm) / DLC film (film thickness 500nm) from the Ge substrate side) to the (surface on which the laser light emitting surface) of the Ge substrate an anti-reflection film (YF ₃ film (thickness: 650nm) / Ge film (film thickness 130nm) / MgF ₂ film (thickness: 200nm) from the Ge substrate side) to the (surface on which the laser light incidence surface) is formed, and the other side A protective window for a laser processing machine was produced. As the Ge substrate, an original plate having a diameter of 90 mm and a thickness of 5 mm was used. The MgF ₂ film, the Ge film, and the antireflection film constituting the multilayer film were formed by the vacuum evaporation method, and the DLC film constituting the multilayer film was formed by the sputtering method. The transmittance of the produced optical component was evaluated using a Fourier transform infrared spectrophotometer.

The composition of the optical component produced in Example 1 was as follows: DLC film (film thickness 500 nm) / Ge film (film thickness 80 nm) / MgF ₂ film (film thickness 500 nm) / Ge substrate (thickness 5 mm) / YF ₃ film Ge film (thickness: 130 nm) / MgF ₂ film (film thickness: 200 nm).

5 is a diagram showing the wavelength dependency of the transmittance in the optical component of Example 1. Fig. As can be seen from Fig. 5, in the optical component of Example 1, the transmittance of 97.2% was realized at 9.3 mu m which is the laser wavelength. This is a protective window for a laser processing machine preferably having a transmittance of 97% or more, and is a sufficient optical performance.

[Example 2]

As an optical component, a MgF ₂ film, a Ge film, and a DLC film were formed in this order from one side of a Ge substrate (a surface to be a laser beam emitting surface), and a MgF ₂ film and a Ge film were exposed in this order. It is covered with a film, the anti-reflection film (YF ₃ film (thickness: 650nm) / Ge film (film thickness 130nm) / MgF ₂ film (thickness: 200nm) from the Ge substrate side to the other surface (surface on which the laser light incident surface) ) Was formed on the protective window. As the Ge substrate, an original plate having a diameter of 90 mm and a thickness of 5 mm was used. The MgF ₂ film and the Ge film constituting the multilayer film were formed by vacuum evaporation, and the DLC film constituting the multilayer film was formed by a sputtering method using a mask having a predetermined opening. The transmittance of the produced optical component was evaluated using a Fourier transform infrared spectrophotometer.

The composition of the optical component manufactured in Example 2 was as follows: DLC film (film thickness 500 mm) / Ge film (film thickness 80 nm) / MgF ₂ film (film thickness 500 nm) / Ge substrate (thickness 5 mm) / YF ₃ film Ge film (thickness: 130 nm) / MgF ₂ film (film thickness: 200 nm).

In the optical component of Example 2, the transmittance of 97.2% could be realized at 9.3 mu m which is the laser wavelength. This is a protective window for a laser processing machine preferably having a transmittance of 97% or more, and is a sufficient optical performance.

Next, the optical parts of Examples 1 and 2 were subjected to a "wear test (1) (MIL-C-675 conformable SEVERE ABRASION)" and a "corrosion test (immersed in an aqueous hydrochloric acid solution diluted to 50% for 1 hour) . The results are shown in Table 1. The case where peeling of the multilayer film did not occur after the abrasion test (1) was evaluated as & cir &, and the case where peeling of the multilayer film occurred was evaluated as x. A case in which peeling of the multilayer film did not occur after the corrosion test was evaluated as & cir &

As shown in Table 1, in the optical components of Examples 1 and 2, peeling of the multilayer film did not occur after the abrasion test (1), and the abrasion resistance was excellent. Further, as a result of the corrosion test (1), in the optical component of Example 2, peeling of the multilayer film occurred, whereas in the optical component of Example 2, the multilayer film was not peeled off and the third layer of the multi- Layer of the MgF ₂ film and the second-layer Ge film without covering them, the lifetime of the optical component under the corrosive environment can be improved.

[Comparative Example 1]

In Comparative Example 1, optical analysis of the optical component corresponding to Patent Document 1 was performed.

The optical component of Comparative Example 1 was a DLC film (film thickness 300 nm) / Ge film (film thickness 30 nm) / Y ₂ O ₃ film (film thickness 30 nm) / YF ₃ film (film thickness 600 nm) / Y ₂ O ₃ (Film thickness: 30 nm) / ZnS substrate (thickness: 5 mm) / Y ₂ O ₃ film (film thickness: 80 nm) / YF ₃ film (1300 nm) / MgF ₂ film (film thickness: 400 nm)

6 is a graph showing the wavelength dependency of the transmittance when optical analysis is performed using the optical thin film design software Essential Macleod for the optical component of Comparative Example 1. Fig. As can be seen from Fig. 6, the optical component of Comparative Example 1 had a transmittance of 95% or less at a laser wavelength of 9.3 占 퐉. When this optical component is used as a protective window for a laser processing machine, there is a problem that the machining precision is deteriorated at the time of high-speed machining because a thermal lens effect is produced.

[Example 3]

A protective window for a laser processing machine in which a multilayer film (YF ₃ film (film thickness 660 nm) / Ge film (film thickness 120 nm) / DLC film (film thickness 80 nm)) was formed on both surfaces of a Ge substrate as an optical component . As the Ge substrate, an original plate having a diameter of 110 mm and a thickness of 5 mm was used. The MgF ₂ film, the Ge film, and the antireflection film constituting the multilayer film were formed by the vacuum vapor deposition method, and the DLC film constituting the multilayer film was formed by the plasma CVD method. The transmittance of the produced optical component was evaluated using a Fourier transform infrared spectrophotometer.

The composition of the optical component manufactured in Example 3 was as follows: DLC film (film thickness 80 nm) / Ge film (film thickness 120 nm) / YF ₃ film (film thickness 660 nm) / Ge substrate (thickness 5 mm) / YF ₃ film 660 nm) / Ge film (film thickness 120 nm) / DLC film (film thickness 80 nm).

7 is a diagram showing the wavelength dependence of transmittance in the optical component of Example 3. Fig. As can be seen from Fig. 7, in the optical component of Example 3, transmittance of 99.0% could be realized at 9.3 mu m which is the laser wavelength. This is a protective window for a laser processing machine preferably having a transmittance of 97% or more, and is a sufficient optical performance.

[Example 4]

The composition of the optical component was changed to a DLC film (film thickness 130 nm) / Ge film (film thickness 110 nm) / YbF ₃ film (film thickness 670 nm) / Ge substrate (thickness 5 mm) / YbF ₃ film (film thickness 670 nm) / Ge film (Film thickness: 110 nm) / DLC film (film thickness: 130 nm), the optical component of Example 4 was produced in the same manner as in Example 3. [

8 is a diagram showing the wavelength dependency of the transmittance in the optical component of Example 4. Fig. As can be seen from Fig. 8, in the optical component of Example 4, a transmittance of 98.4% could be realized at a laser wavelength of 9.3 mu m. This is a protective window for a laser processing machine preferably having a transmittance of 97% or more, and is a sufficient optical performance.

[Example 5]

The composition of the optical component was changed from the DLC film (film thickness 50 nm) / Ge film (film thickness 130 nm) / MgF ₂ film (film thickness 640 nm) / Ge substrate (thickness 5 mm) / MgF ₂ film (film thickness 640 nm) / Ge film (Film thickness: 130 nm) / DLC film (film thickness: 50 nm), the optical component of Example 5 was produced in the same manner as in Example 3. [

9 is a diagram showing the wavelength dependency of the transmittance in the optical component of Example 5. Fig. As can be seen from Fig. 9, in the optical component of Example 5, the transmittance of 99.3% could be realized at 9.3 mu m which is the laser wavelength. This is a protective window for a laser processing machine preferably having a transmittance of 97% or more, and is a sufficient optical performance.

[Example 6]

As the optical component, one side multi-film (YF ₃ film (thickness: 700nm) / Ge film (film thickness 110nm) / DLC film (film thickness 300nm) from the Ge substrate side) to the (surface on which the laser light emitting surface) of the Ge substrate (YF ₃ film (film thickness 750 nm) / Ge film (film thickness 150 nm) / MgF ₂ film (film thickness 200 nm) from the Ge substrate side) is formed on the other surface (surface to be the laser light incident surface) A protective window for a laser processing machine was produced. As the Ge substrate, an original plate having a diameter of 110 mm and a thickness of 5 mm was used. The YF ₃ film and the Ge film and the antireflection film constituting the multilayer film were formed by the vacuum vapor deposition method and the DLC film constituting the multilayer film was formed by the plasma CVD method. The transmittance of the produced optical component was evaluated using a Fourier transform infrared spectrophotometer.

The structure of the optical component manufactured in Example 6 is a DLC film (film thickness 300 nm) / Ge film (film thickness 110 nm) / YF ₃ film (film thickness 700 nm) / Ge substrate (thickness 5 mm) / YF ₃ film Ge film (film thickness: 150 nm) / MgF ₂ film (film thickness: 200 nm).

10 is a diagram showing the wavelength dependency of the transmittance in the optical component of Example 6. Fig. As can be seen from Fig. 10, in the optical component of Example 6, a transmittance of 98.4% could be realized at a laser wavelength of 10.6 mu m. This is a protective window for a laser processing machine preferably having a transmittance of 97% or more, and is a sufficient optical performance.

[Example 7]

The composition of the optical component was changed from the DLC film (film thickness 50 nm) / Ge film (film thickness 110 nm) / YbF ₃ film (film thickness 950 nm) / Ge substrate (thickness 5 mm) / YF ₃ film (film thickness 750 nm) (Film thickness: 150 nm) / MgF ₂ film (film thickness: 200 nm), the optical component of Example 7 was produced in the same manner as in Example 6. [

11 is a diagram showing the wavelength dependence of the transmittance in the optical component of Example 7. Fig. As can be seen from Fig. 11, in the optical component of Example 7, a transmittance of 98.2% could be realized at a laser wavelength of 10.6 mu m. This is a protective window for a laser processing machine preferably having a transmittance of 97% or more, and is a sufficient optical performance.

[Example 8]

The composition of the optical component was changed from the DLC film (film thickness 170 nm) / Ge film (film thickness 150 nm) / MgF ₂ film (film thickness 600 nm) / Ge substrate (thickness 5 mm) / YF ₃ film (film thickness 750 nm) (Film thickness: 150 nm) / MgF ₂ film (film thickness: 200 nm), the optical component of Example 8 was produced in the same manner as in Example 6. [

12 is a diagram showing the wavelength dependence of the transmittance in the optical component of the eighth embodiment. As can be seen from Fig. 12, in the optical component of Example 8, a transmittance of 98.3% could be realized at a laser wavelength of 10.6 mu m. This is a protective window for a laser processing machine preferably having a transmittance of 97% or more, and is a sufficient optical performance.

Next, the optical parts of Example 1 and Examples 3 to 8 were subjected to the abrasion test (1) (MIL-C-675 compliant SEVERE ABRASION) and the abrasion test (2) 50 round trips) ". The results are shown in Table 2. A case in which peeling of the multilayer film did not occur after each of the abrasion tests was evaluated as & cir &

As shown in Table 2, in the optical components of Examples 1 and 3 to 7, no peeling of the multilayer film occurred after the abrasion test (1). Further, in the optical component of Example 1, peeling of the multilayer film occurred after the abrasion test (2), whereas in the optical components of Examples 3 to 7, the multilayer film was not peeled off after the abrasion test (2) By adjusting the film thicknesses of the fluoride film, the Ge film and the DLC film, the wear resistance can be further improved.

On the other hand, the present international application claims priority to Japanese Patent Application No. 2016-096876, filed on May 13, 2016, the entire contents of which are incorporated herein by reference.

The present invention relates to a method of manufacturing a semiconductor laser device and a method of manufacturing the same and a method of manufacturing the same. Workpiece, 34: Protection window.

Claims (5)

Wherein a fluoride film, a Ge film, and a diamond like carbon film (DLC film) are laminated in this order on at least one surface of the Ge substrate from the Ge substrate side. The method according to claim 1,
Wherein the fluoride film comprises at least one selected from the group consisting of YF ₃ , YbF _3, and MgF ₂ . 3. The method according to claim 1 or 2,
Wherein the fluoride film and the Ge film are covered with the diamond like carbon film without being exposed. 4. The method according to any one of claims 1 to 3,
Wherein the fluoride film has a thickness of 500 nm to 950 nm, the Ge film has a thickness of 50 nm to 150 nm, and the DLC film has a thickness of 50 nm to 300 nm. A laser machining apparatus comprising the optical component according to any one of claims 1 to 4.

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