CN109154678B - Optical component and laser processing machine - Google Patents

Optical component and laser processing machine Download PDF

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Publication number
CN109154678B
CN109154678B CN201780028538.5A CN201780028538A CN109154678B CN 109154678 B CN109154678 B CN 109154678B CN 201780028538 A CN201780028538 A CN 201780028538A CN 109154678 B CN109154678 B CN 109154678B
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film
optical member
thickness
substrate
transmittance
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CN109154678A (en
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福永圭佑
中井秀和
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/113—Anti-reflection coatings using inorganic layer materials only
    • G02B1/115—Multilayers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/14—Protective coatings, e.g. hard coatings

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Physical Vapour Deposition (AREA)
  • Laser Beam Processing (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The invention provides an optical component, which is characterized in that a fluoride film, a Ge film and a diamond-like carbon film (DLC film) are laminated on at least one surface of a Ge substrate in sequence from the Ge substrate side. The fluoride film preferably has a film thickness of 500nm to 950nm, the Ge film preferably has a film thickness of 50nm to 150nm, and the DLC film preferably has a film thickness of 50nm to 300 nm. Preferably, the fluoride film is formed by passing YF3、YbF3And MgF2At least one constituent selected from the group of constituents.

Description

Optical component and laser processing machine
Technical Field
The present invention relates to an optical component and a laser beam machine equipped with the optical component.
Background
CO oscillating at a wavelength of 9-11 μm2Laser light can oscillate at high output and has high absorptivity in resin, and therefore is used for drilling holes in printed wiring boards incorporated in electronic devices such as smartphones.
In a laser beam machine for drilling, a condenser lens is provided above a machining area, and therefore there is a problem that dirt adheres to the condenser lens due to resin vapor, resin sputtering, copper sputtering, and the like generated during machining. Conventionally, to prevent this problem, protection is calledThe optical member of the window (protection window) is disposed between the condenser lens and the workpiece, and damage and deterioration of the condenser lens are prevented. The main property required for the protective window is relative to CO as infrared light2The laser light has high transmittance and has abrasion resistance against wiping of attached dust, spatter, and the like.
Patent document 1 proposes an infrared transmitting structure in which the 1 st Y-th substrate is laminated on the front surface side of a ZnS substrate in order from the substrate surface2O3Layer, YF3Layer No. 2Y2O3An infrared-transmitting structure comprising a layer and a diamond-like carbon layer, and a ZnS substrate having a ZnS layer and an Al layer laminated in this order from the substrate surface and having a thickness of 10 to 200nm on the front surface side of the ZnS substrate2O3、Y2O3Any 1 layer, Ge layer with thickness of 100-750 nm, and diamond-like carbon layer with thickness of 500-2000 nm.
Patent document 1 discloses an infrared-transmitting structure having excellent impact resistance and durability, and further having excellent peeling resistance and transmittance, as compared with the infrared-transmitting structures heretofore.
Patent document 1: japanese laid-open patent publication No. 2008-268277
Disclosure of Invention
However, the infrared transmitting structure proposed in patent document 1 has a problem that a diamond-like carbon layer is formed on the outermost layer, and therefore, the wear resistance is good, but sufficient optical performance is not obtained when the infrared transmitting structure is used as an optical component of a laser processing machine. When laser processing is performed by a laser processing machine equipped with the optical member as described above, the optical member absorbs infrared light, and a temperature distribution occurs in a ZnS substrate, thereby causing a decrease in the transmission accuracy of laser light, which is called a thermal lens effect. In particular, in a laser processing machine for drilling which mounts an optical member as a protective window, there is a problem that the optical member absorbs infrared light to generate a thermal lens effect, and thus processing of a desired hole position and hole shape cannot be performed, and defective products out of the standard are generated. In order to prevent the above-described problems, a laser processing machine for drilling is limited in speed of laser processing to achieve a desired processing accuracy, but the processing speed is limited to lower productivity.
The present invention has been made to solve the above problems, and an object of the present invention is to provide a method for CO2An optical member having high laser transmittance and excellent abrasion resistance.
The present invention is an optical component characterized in that a fluoride film, a Ge film and a diamond-like film (DLC film) are laminated on at least one surface of a Ge substrate in this order from the Ge substrate side.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the invention, the carbon dioxide can be provided for CO2An optical member having high laser transmittance and excellent abrasion resistance. Further, the laser beam machine equipped with the optical component of the present invention can perform high-precision machining even at high-speed machining.
Drawings
Fig. 1 is a schematic cross-sectional view showing the structure of an optical member according to embodiment 1.
Fig. 2 is a schematic cross-sectional view showing another configuration of the optical member according to embodiment 1.
Fig. 3 is a schematic cross-sectional view showing the structure of an optical member according to embodiment 2.
Fig. 4 is a schematic diagram showing the configuration of the laser beam machine according to embodiment 3.
Fig. 5 is a graph showing the wavelength dependence of transmittance in the optical member of example 1.
Fig. 6 is a graph showing the wavelength dependence of the transmittance in the optical member of comparative example 1.
Fig. 7 is a graph showing the wavelength dependence of transmittance in the optical member of example 3.
Fig. 8 is a graph showing the wavelength dependence of transmittance in the optical member of example 4.
Fig. 9 is a graph showing the wavelength dependence of transmittance in the optical member of example 5.
Fig. 10 is a graph showing the wavelength dependence of transmittance in the optical member of example 6.
Fig. 11 is a graph showing the wavelength dependence of transmittance in the optical member of example 7.
Fig. 12 is a graph showing the wavelength dependence of the transmittance in the optical member of example 8.
Detailed Description
Embodiment 1.
An optical component according to embodiment 1 of the present invention is characterized in that a fluoride film, a Ge film, and a diamond-like carbon film (DLC film) are laminated on at least one surface of a Ge substrate in this order from the Ge substrate side.
Fig. 1 is a schematic cross-sectional view showing the structure of an optical member according to embodiment 1. As shown in fig. 1, the optical member is provided with a multilayer film 14 on both sides of a Ge substrate 10, and the multilayer film 14 is composed of a fluoride film 11 laminated on the Ge substrate 10, a Ge film 12 laminated on the fluoride film 11, and a DLC film 13 laminated on the Ge film 12. Fig. 2 is a schematic cross-sectional view showing another configuration of the optical member according to embodiment 1. As shown in fig. 2, the optical member is provided with a multilayer film 14 on one surface of a Ge substrate 10, and an antireflection film 15 on the other surface of the Ge substrate 10, the multilayer film 14 being composed of a fluoride film 11 laminated on the Ge substrate 10, a Ge film 12 laminated on the fluoride film 11, and a DLC film 13 laminated on the Ge film 12, the antireflection film 15 being different from the multilayer film 14.
In the optical member of patent document 1, ZnS is used as a substrate, but if ZnS having low thermal conductivity is used as a substrate, a temperature distribution occurs in the substrate when laser processing is continuously performed. If such a temperature distribution is generated, the processing accuracy is lowered due to the thermal lens effect, and thus ZnS is not suitable as a substrate for an optical member for a laser processing machine.
Therefore, in the optical member of the present invention, Ge having high thermal conductivity is used for the substrate. The Ge substrate 10 may be doped with an element other than Ge if the optical performance and mechanical characteristics are not affected. The shape of the Ge substrate 10 is not limited, and for example, a disk having a diameter of 80mm to 140mm and a thickness of 2mm to 10mm is preferable as a protection window for a laser processing machine.
The fluoride film 11 laminated on the Ge substrate 10 includes, for example, YF3、YbF3、MgF2、BaF2、CaF2Etc., preferably YF, from the viewpoint of excellent permeability in the infrared region3、YbF3And MgF2At least one constituent selected from the group of constituents.
As the fluoride film 11, if the film thickness is large, the tensile stress becomes large, and therefore, if the film thickness is too large, cracks or the like occur in the film formation of the fluoride film 11 to cause damage of the film, and it may be difficult to secure the film adhesiveness. On the other hand, if the thickness of the fluoride film 11 is too small, the antireflection effect may be difficult to obtain, and the infrared light transmittance may decrease. The fluoride film 11 is preferably 500nm to 950nm thick in order to secure the adhesiveness of the film and to realize high transmittance with respect to infrared light.
Since the Ge film 12 laminated on the fluoride film 11 has good adhesion to the DLC film 13, the Ge film 12 can ensure adhesion of the DLC film 13. The Ge film 12 is disposed between the DLC film 13 having a compressive stress and the fluoride film 11 having a tensile stress, thereby ensuring the balance of stress in the entire multilayer film 14 and preventing the application of load to the interface having a weak adhesion, that is, between the fluoride film 11 and the Ge film 12 and between the fluoride film 11 and the Ge substrate 10.
If the film thickness of the Ge film 12 is too large, it is difficult to ensure the balance of stress in the entire multilayer film 14, and peeling easily occurs between the fluoride film 11 and the Ge film 12 and between the fluoride film 11 and the Ge substrate 10. On the other hand, if the thickness of the Ge film 12 is too small, the antireflection effect may be difficult to obtain, and the infrared light transmittance may decrease. The thickness of the Ge film 12 is preferably 50nm to 150nm, more preferably 100nm to 130nm, from the viewpoint of ensuring film adhesion and achieving high transmittance with respect to infrared light.
The DLC film 13 laminated on the Ge film 12 is made of diamond-like carbon having high stability as a substance and low reactivity with other materials. By providing the DLC film 13 on the outermost surface of the optical member, it is possible to prevent the film from being damaged or corroded by dust or spatter generated during the hole forming process of a printed circuit board or the like. Further, since diamond-like carbon has high hardness and the adhesion of sputtered material to diamond-like carbon is weak, the optical component can be cleaned without fear of generation of scratches, the sputtered material can be easily removed, and the optical component can be easily recycled and reused.
If the film thickness of the DLC film 13 is too large, absorption of infrared light by the DLC film 13 becomes large, transmittance of infrared light decreases, compressive stress becomes large, and adhesion force with the film may also decrease. On the other hand, if the film thickness of the DLC film 13 is too small, the DLC film 13 may be affected by the underlayer of the DLC film 13 during wear, and the original wear resistance of the DLC film 13 may not be exhibited. In consideration of these points, the film thickness of the DLC film 13 is preferably 50nm to 300 nm.
The above-mentioned respective films may be doped with other elements if the optical performance and mechanical characteristics of the multilayer film 14 are not affected, or a thin film other than the above-mentioned films may be formed.
The antireflection film 15 is not limited, and for example, YF having a film thickness of 600nm to 800nm is stacked in this order from the Ge substrate 10 side3Film, Ge film having film thickness of 110nm to 180nm, and MgF having film thickness of 50nm to 800nm2And (3) a membrane. By providing the antireflection film 15 as described above on one surface of the Ge substrate 10 which is a laser light incidence surface, the transmittance at the wavelength of 9.3 μm or the wavelength of 10.6 μm can be improved as compared with the case where the multilayer film 14 is provided on both surfaces of the Ge substrate 10.
The method of forming the multilayer film 14 and the antireflection film 15 in the optical member of the present invention may be any method as long as a film can be formed on the Ge substrate 10, and is not limited to the type thereof. As a commonly known film formation method, a physical vapor deposition method (PVD method) such as a vacuum vapor deposition method or a sputtering method, or a chemical vapor deposition method (CVD method) such as a plasma CVD method is given. In the present invention, it is preferable to form the fluoride film 11, the Ge film 12, and the antireflection film 15 by a vacuum deposition method, because the film formation using a plurality of materials is excellent in production efficiency. In the present invention, the DLC film 13 is preferably formed by a plasma CVD method, because the composition and thickness of the film can be adjusted with high accuracy.
According to embodiment 1, CO having a wavelength of 9 μm to 11 μm can be provided2An optical member having high transmittance and excellent abrasion resistance by laser light.
Embodiment 2.
An optical component according to embodiment 2 is characterized in that a fluoride film, a Ge film, and a DLC film are laminated in this order from the Ge substrate side on at least one surface of a Ge substrate, and the fluoride film and the Ge film are not exposed by being covered with the DLC film.
Fig. 3 is a schematic cross-sectional view showing the structure of an optical member according to embodiment 2. As shown in fig. 3, the optical component is provided with a multilayer film 20 on one surface of a Ge substrate 10, the multilayer film 20 being composed of a fluoride film 11 laminated on the Ge substrate 10, a Ge film 12 laminated on the fluoride film 11, and a DLC film 13 covering the fluoride film 11 and the Ge film 12 so that the fluoride film 11 and the Ge film 12 are not exposed, and the antireflection film 15 described in embodiment 1 is provided on the other surface of the Ge substrate 10. In fig. 3, the multilayer film 20 is provided on one surface of the Ge substrate 10, but the multilayer film 20 may be provided on both surfaces of the Ge substrate 10.
The Ge substrate 10, the fluoride film 11, the Ge film 12, and the antireflection film 15 have the same configurations as those described in embodiment 1, and therefore, descriptions thereof are omitted.
The thickness of the DLC film 13 formed on the upper surface of the Ge film 12 is preferably 50nm to 300nm as in embodiment 1. The DLC film 13 formed on the side surface of the fluoride film 11 and the side surface of the Ge film 12 so that the fluoride film 11 and the Ge film 12 are not exposed may have a film thickness such that the fluoride film 11 and the Ge film 12 are not exposed. The DLC film 13 can be formed by adjusting the size of the opening of the mask when the film is formed by sputtering using the mask. The fluoride film 11 and the Ge film 12 in the optical member are covered with the DLC film 13, and thereby excellent corrosion resistance can be exhibited against gas generated during processing.
According to embodiment 2, a method for CO control can be provided2The laser has high transmittance and excellent wear resistance, and is not easy to be addedAnd the gas generated during the working hours corrodes the optical component.
Embodiment 3.
A laser processing machine according to embodiment 3 is characterized by having the optical member according to embodiment 1 or 2 described above.
Fig. 4 is a schematic diagram showing the configuration of the laser beam machine according to embodiment 3. As shown in fig. 4, the laser processing machine includes a laser oscillator 30, a condenser lens 32 for condensing a laser beam 31 emitted from the laser oscillator 30, and a protection window 34 disposed in the middle of the optical path of the laser beam 31 between the condenser lens 32 and a workpiece 33 such as a printed circuit board, and the optical member according to embodiment 1 or 2 described above is used as the protection window 34. Here, the protection window 34 is provided so that the multilayer film 14 described in embodiment 1 or the multilayer film 20 described in embodiment 2 faces the processing space side (the side of the object to be processed 33). The configuration of the laser processing machine shown in fig. 4 is an example, and the configuration is not limited to this as long as it is configured by a laser oscillator and an optical system.
In the laser beam machine configured as described above, the laser beam 31 emitted from the laser oscillator 30 is condensed by the condenser lens 32, passes through the protection window 34, and is irradiated to the workpiece 33, thereby being able to perform hole drilling.
The optical member according to embodiment 1 or 2 described above is directed to CO2Since the laser beam has high transmittance, it can be used as the protection window 34, thereby preventing the thermal lens effect that causes absorption of the laser beam, and realizing a laser processing machine that can perform high-speed processing without causing a reduction in processing accuracy. Further, since the protection window 34 is provided so that the multilayer films 14 and 20 having the DLC film 13 formed on the outermost surfaces face the processing space, there is no fear of scratches occurring, and dust and spatters adhering to the surface of the protection window 34 due to long-term use can be easily removed. Generally, the protection window 34 can be separated only by about 100mm from the workpiece 33, and therefore the protection window 34 is exposed to a large amount of sputtered material and dust during processing. Since the optical member described in embodiment 2 is also excellent in corrosion resistance, it is possible to use it as the protective window 34The life of the optical components of the laser processing machine can be improved.
According to embodiment 3, a laser processing machine capable of performing high-speed processing without causing a reduction in processing accuracy while improving maintainability can be provided.
Examples
The present invention will be specifically described below with reference to examples and comparative examples, but the present invention is not limited thereto.
[ example 1]
As an optical component, a protective window for a laser processing machine was produced in which a multilayer film (MgF from the Ge substrate side) was formed on one surface of a Ge substrate (the surface to be the laser light emission surface)2A film (500 nm thick)/Ge film (80 nm thick)/DLC film (500 nm thick)), and an antireflection film (YF from the Ge substrate side) formed on the other surface (the surface to be the laser light incidence surface)3Film (film thickness 650nm)/Ge film (film thickness 130nm)/MgF2Film (film thickness 200 nm)). As the Ge substrate, a disk having a diameter of 90mm and a thickness of 5mm was used. MgF constituting multilayer film2The film, the Ge film and the antireflection film are formed by a vacuum deposition method, and the DLC film constituting the multilayer film is formed by a sputtering method. The transmittance of the manufactured optical member was evaluated using a fourier transform infrared spectrophotometer.
The optical member produced in example 1 had a structure of DLC film (film thickness 500nm)/Ge film (film thickness 80nm)/MgF2Film (film thickness 500nm)/Ge substrate (thickness 5mm)/YF3Film (film thickness 650nm)/Ge film (film thickness 130nm)/MgF2Film (film thickness 200 nm).
Fig. 5 is a graph showing the wavelength dependence of transmittance in the optical member of example 1. As is clear from fig. 5, the optical member of example 1 can achieve a transmittance of 97.2% at a laser wavelength of 9.3 μm. The optical film has sufficient optical performance as a protective window for a laser processing machine which is desired to have a transmittance of 97% or more.
[ example 2]
As the optical component, a protective window for a laser processing machine was formed on one surface of a Ge substrate (to emit laser light)A surface of a surface) of the substrate, MgF is formed in this order from the Ge substrate side2Film, Ge film and DLC film and MgF film covered with DLC film2The film and the Ge film are not exposed, and an antireflection film (YF from the Ge substrate side) is formed on the other surface (the surface to be the laser light incidence surface)3Film (film thickness 650nm)/Ge film (film thickness 130nm)/MgF2Film (film thickness 200 nm)). As the Ge substrate, a disk having a diameter of 90mm and a thickness of 5mm was used. MgF constituting multilayer film2The film and the Ge film are formed by a vacuum deposition method, and the DLC film constituting the multilayer film is formed by a sputtering method using a mask having a predetermined opening. The transmittance of the manufactured optical member was evaluated using a fourier transform infrared spectrophotometer.
The optical member produced in example 2 had a structure of DLC film (film thickness 500mm)/Ge film (film thickness 80nm)/MgF2Film (film thickness 500nm)/Ge substrate (thickness 5mm)/YF3Film (film thickness 650nm)/Ge film (film thickness 130nm)/MgF2Film (film thickness 200 nm).
The optical member of example 2 can achieve a transmittance of 97.2% at a laser wavelength of 9.3 μm. The optical film has sufficient optical performance as a protective window for a laser processing machine which is desired to have a transmittance of 97% or more.
Next, with respect to the optical members of examples 1 and 2, "ABRASION test (1) (seal ABRASION according to MIL-C-675)" and "corrosion test (immersion in a 50% diluted hydrochloric acid aqueous solution for 1 hour)" were performed. The results are shown in table 1. After the abrasion test (1), the case where the multilayer film was peeled off was evaluated as o, and the case where the multilayer film was not peeled off was evaluated as x. After the corrosion test, the case where the multilayer film was not peeled off was indicated as "o", and the case where the multilayer film was peeled off was indicated as "x".
[ Table 1]
Abrasion test (1) Corrosion test
Example 1 ○ ×
Example 2 ○ ○
As shown in table 1, in the optical members of examples 1 and 2, peeling of the multilayer film did not occur after the abrasion test (1), and the abrasion resistance was excellent. In addition, as a result of the corrosion test, peeling of the multilayer film occurred in the optical member of example 1, whereas the multilayer film did not peel in the optical member of example 2, and the MgF of the 1 st layer was formed as the DLC film of the 3 rd layer of the multilayer film2The film and the Ge film of the 2 nd layer are covered without being exposed, so that the service life of the optical component in a corrosive environment can be improved.
Comparative example 1
In comparative example 1, optical analysis of an optical member corresponding to patent document 1 was performed.
The optical member of comparative example 1 had a structure of DLC film (film thickness 300nm)/Ge film (film thickness 30nm)/Y2O3Film (film thickness 30nm)/YF3Film thickness 600 nm/Y2O3Film (film thickness 30nm)/ZnS substrate (thickness 5mm)/Y2O3Film (film thickness 80nm)/YF3Film (1300nm)/MgF2Film thickness (400 nm).
Fig. 6 is a graph showing the wavelength dependence of transmittance when optical analysis was performed on the optical member of comparative example 1 using optical thin film design software Essential mechanical. As can be seen from fig. 6, in the optical member of comparative example 1, the transmittance at the laser wavelength of 9.3 μm was 95% or less. When the optical member is applied as a protective window for a laser processing machine, a thermal lens effect occurs, which causes a problem of deterioration in processing accuracy during high-speed processing.
[ example 3]
As an optical component, a protective window for a laser processing machine was fabricated, in which a multilayer film (YF from the Ge substrate side) was formed on both sides of a Ge substrate3Film (film thickness 660nm)/Ge film (film thickness 120nm)/DLC film (film thickness 80 nm)). As the Ge substrate, a disk having a diameter of 110mm and a thickness of 5mm was used. YF constituting multilayer film3The film and the Ge film are formed by a vacuum evaporation method, and the DLC film constituting the multilayer film is formed by a plasma CVD method. The transmittance of the manufactured optical member was evaluated using a fourier transform infrared spectrophotometer.
The optical member manufactured in example 3 had a structure of DLC film (film thickness 80nm)/Ge film (film thickness 120nm)/YF3Film (film thickness 660nm)/Ge substrate (thickness 5mm)/YF3Film (film thickness 660nm)/Ge film (film thickness 120nm)/DLC film (film thickness 80 nm).
Fig. 7 is a graph showing the wavelength dependence of transmittance in the optical member of example 3. As is clear from fig. 7, the optical member of example 3 can achieve a transmittance of 99.0% at a laser wavelength of 9.3 μm, and has sufficient optical performance as a protection window for a laser processing machine which is desired to have a transmittance of 97% or more.
[ example 4]
Except that the structure of the optical member was changed to DLC film (film thickness 130nm)/Ge film (film thickness 110nm)/YbF3Film (film thickness 670nm)/Ge substrate (thickness 5mm)/YbF3An optical member of example 4 was produced in the same manner as in example 3 except for the film (film thickness 670nm)/Ge film (film thickness 110nm)/DLC film (film thickness 130 nm).
Fig. 8 is a graph showing the wavelength dependence of transmittance in the optical member of example 4. As is clear from fig. 8, the optical member of example 4 can achieve 98.4% transmittance at a laser wavelength of 9.3 μm. The optical film has sufficient optical performance as a protective window for a laser processing machine which is desired to have a transmittance of 97% or more.
[ example 5]
Except that the structure of the optical member was changed to DLC film (film thickness 50nm)/Ge film (film thickness 130nm)/MgF2Film (film thickness 640nm)/Ge substrate (thickness 5mm)/MgF2An optical member of example 5 was produced in the same manner as in example 3 except for the film (film thickness 640nm)/Ge film (film thickness 130nm)/DLC film (film thickness 50 nm).
Fig. 9 is a graph showing the wavelength dependence of transmittance in the optical member of example 5. As is clear from fig. 9, the optical member of example 5 can achieve a transmittance of 99.3% at a laser wavelength of 9.3 μm. The optical film has sufficient optical performance as a protective window for a laser processing machine which is desired to have a transmittance of 97% or more.
[ example 6]
As an optical component, a protective window for a laser processing machine was fabricated by forming a multilayer film (YF from the Ge substrate side) on one surface of a Ge substrate (a surface to be an emission surface of laser light)3A film (700 nm thick)/Ge film (110 nm thick)/DLC film (300 nm thick)), and an antireflection film (YF from the Ge substrate side) formed on the other surface (the surface to be the laser light incidence surface)3Film (film thickness 750nm)/Ge film (film thickness 150nm)/MgF2Film (film thickness 200 nm)). As the Ge substrate, a disk having a diameter of 110mm and a thickness of 5mm was used. YF constituting multilayer film3The film, the Ge film and the antireflection film are formed by a vacuum deposition method, and the DLC film constituting the multilayer film is formed by a plasma CVD method. The transmittance of the manufactured optical member was evaluated using a fourier transform infrared spectrophotometer.
The optical member produced in example 6 had a structure of DLC film (film thickness 300nm)/Ge film (film thickness 110nm)/YF3Film (film thickness 700nm)/Ge substrate (thickness 5mm)/YF3Film (film thickness 750nm)/Ge film (film thickness 150nm)/MgF2Film (film thickness 200 nm).
Fig. 10 is a graph showing the wavelength dependence of transmittance in the optical member of example 6. As is clear from fig. 10, the optical member of example 6 can achieve 98.4% transmittance at a laser wavelength of 10.6 μm. The optical film has sufficient optical performance as a protective window for a laser processing machine which is desired to have a transmittance of 97% or more.
[ example 7]
Except that the structure of the optical member was changed to DLC film (film thickness 50nm)/Ge film (film thickness 110nm)/YbF3Film (film thickness 950nm)/Ge substrate (thickness 5mm)/YF3Film (film thickness 750nm)/Ge film (film thickness 150nm)/MgF2An optical member of example 7 was produced in the same manner as in example 6 except for using a film (film thickness 200 nm).
Fig. 11 is a graph showing the wavelength dependence of transmittance in the optical member of example 7. As is clear from fig. 11, the optical member of example 7 can achieve 98.2% transmittance at a laser wavelength of 10.6 μm. The optical film has sufficient optical performance as a protective window for a laser processing machine which is desired to have a transmittance of 97% or more.
[ example 8]
Except that the structure of the optical member was changed to DLC film (film thickness 170nm)/Ge film (film thickness 150nm)/MgF2Film (film thickness 600nm)/Ge substrate (thickness 5mm)/YF3Film (film thickness 750nm)/Ge film (film thickness 150nm)/MgF2An optical member of example 8 was produced in the same manner as in example 6 except for using a film (thickness of 200 nm).
Fig. 12 is a graph showing the wavelength dependence of the transmittance in the optical member of example 8. As is clear from fig. 12, the optical member of example 8 can achieve 98.3% transmittance at a laser wavelength of 10.6 μm. The optical film has sufficient optical performance as a protective window for a laser processing machine which is desired to have a transmittance of 97% or more.
Next, the optical members of examples 1 and 3 to 8 were subjected to "wear test (1) (seal ABRASION according to MIL-C-675)" and "wear test (2) (sand eraser was reciprocated 50 times with a load of 3 kg)". The results are shown in Table 2. After each abrasion test, the case where the multilayer film was not peeled off was evaluated as o, and the case where the multilayer film was peeled off was evaluated as x.
[ Table 2]
Abrasion test (1) Abrasion test (2)
Example 1 ○ ×
Example 3 ○ ○
Example 4 ○ ○
Example 5 ○ ○
Example 6 ○ ○
Example 7 ○ ○
Example 8 ○ ○
As shown in table 2, in the optical members of examples 1 and 3 to 8, the multilayer film was not peeled off after the abrasion test (1). In the optical member of example 1, while the peeling of the multilayer film occurred after the abrasion test (2), the abrasion resistance was further improved by adjusting the film thicknesses of the fluoride film, the Ge film, and the DLC film constituting the multilayer film without the peeling of the multilayer film occurring after the abrasion test (2) in the optical members of examples 3 to 8.
Further, the international application claims priority based on Japanese patent application No. 2016-096876, which was filed on 5/13/2016, and the entire contents of which are incorporated herein by reference.
Description of the reference numerals
The film comprises a 10 Ge substrate, an 11 fluoride film, a 12 Ge film, a 13 DLC film, a 14 multilayer film, a 15 antireflection film, a 20 multilayer film, a 30 laser oscillator, a 31 laser, a 32 condenser lens, a 33 processed object and a 34 protection window.

Claims (4)

1. CO (carbon monoxide)2An optical member for laser light, characterized in that,
a fluoride film, a Ge film and a DLC film as a diamond-like film are laminated on at least one surface of a Ge substrate in this order from the Ge substrate side,
the fluoride film has a film thickness of 500nm to 950nm, the Ge film has a film thickness of 50nm to 150nm, and the DLC film has a film thickness of 50nm to 300 nm.
2. CO according to claim 12An optical member for laser light, characterized in that,
the fluoride film is formed by passing YF3、YbF3And MgF2At least one constituent selected from the group of constituents.
3. CO according to claim 1 or 22An optical member for laser light, characterized in that,
the fluoride film and the Ge film are not exposed by the diamond-like film covering.
4. CO (carbon monoxide)2A laser beam machine comprising the CO according to any one of claims 1 to 32An optical component for laser.
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