TWI732427B - Optical member and laser processing machine - Google Patents
Optical member and laser processing machine Download PDFInfo
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- TWI732427B TWI732427B TW109101700A TW109101700A TWI732427B TW I732427 B TWI732427 B TW I732427B TW 109101700 A TW109101700 A TW 109101700A TW 109101700 A TW109101700 A TW 109101700A TW I732427 B TWI732427 B TW I732427B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
- G02B1/115—Multilayers
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Abstract
Description
本發明有關於光學構件以及具有該光學構件之雷射加工機。 The present invention relates to an optical component and a laser processing machine having the optical component.
藉由雷射光的照射來將被加工物進行加工的雷射加工機中,係設有用以保護包含聚光透鏡的透鏡系統之屬於光學構件的保護窗。保護窗係保護透鏡系統免於在加工時產生的粉塵或濺射物的影響。於雷射光源係使用二氧化碳(CO2)雷射的雷射加工機的情況下,保護窗被要求具有對屬於紅外光的CO2雷射光有高透射率。此外,保護窗被要求具有耐環境性,該耐環境性係所謂之在擦去附著於保護窗的異物之際能夠抑制損傷的耐摩耗性、以及不會因為雷射加工時所填充的氣體而產生腐蝕的耐腐蝕性。 A laser processing machine that processes a workpiece by irradiation with laser light is provided with a protective window that is an optical member for protecting a lens system including a condenser lens. The protective window protects the lens system from dust or spatters generated during processing. In the case of a laser processing machine using a carbon dioxide (CO 2 ) laser as the laser light source, the protective window is required to have a high transmittance to the CO 2 laser light which is infrared light. In addition, the protective window is required to have environmental resistance, which is the so-called abrasion resistance that can suppress damage when wiping off foreign matter attached to the protective window, and is not affected by the gas filled during laser processing. Corrosion resistance that produces corrosion.
專利文獻1中揭示一種光學構件,該光學構件係具有硫化鋅(ZnS)製的基板,且從基板面依序積層:第一氧化釔(Y2O3)膜、氟化釔(YF3)膜、第二Y2O3膜、鍺(Ge)膜以及類鑽碳(Diamond Like Carbon:DLC)膜。專利文獻1之光學構件係藉由在光學構件的表層設有DLC膜而具備高的耐環境性。此外,專利文獻1之光學構件中,係藉由以第一Y2O3膜與第二Y2O3膜夾入YF3膜,而確保基板與YF3膜與DLC膜的密著性。 Patent Document 1 discloses an optical member which has a substrate made of zinc sulfide (ZnS) and is laminated in order from the surface of the substrate: a first yttrium oxide (Y 2 O 3 ) film, and yttrium fluoride (YF 3 ) A film, a second Y 2 O 3 film, a germanium (Ge) film, and a diamond-like carbon (Diamond Like Carbon: DLC) film. The optical member of Patent Document 1 has high environmental resistance by providing a DLC film on the surface of the optical member. In addition, in the optical member of Patent Document 1, the first Y 2 O 3 film and the second Y 2 O 3 film sandwich the YF 3 film to ensure the adhesion between the substrate and the YF 3 film and the DLC film.
[專利文獻1]日本特開2008-268277號公報 [Patent Document 1] JP 2008-268277 A
然而,上述專利文獻1之光學構件中,會由於在屬於氧化物之兩個Y2O3膜的紅外光吸收而有著紅外光的透射率減低的問題。 However, in the optical member of Patent Document 1 mentioned above, there is a problem that the transmittance of infrared light is reduced due to the absorption of infrared light in the two Y 2 O 3 films that are oxides.
本發明有鑑於上述問題,目的在於得到一種不使用氧化物而且能夠以高透射率透射紅外光的光學構件。 In view of the above-mentioned problems, the present invention aims to obtain an optical member that does not use oxides and can transmit infrared light with a high transmittance.
為了解決上述課題並達成目的,本發明之光學構件係具備由鍺所構成之基板與多層膜。多層膜係由從基板側以鋅化合物膜、鍺膜、類鑽碳膜的順序積層之至少三層所構成。 In order to solve the above-mentioned problems and achieve the objective, the optical member of the present invention includes a substrate and a multilayer film made of germanium. The multilayer film is composed of at least three layers laminated in the order of a zinc compound film, a germanium film, and a diamond-like carbon film from the substrate side.
根據本發明,光學構件係發揮不使用氧化物,且能夠以高透射率透射紅外光之效果。 According to the present invention, the optical member does not use oxides and can transmit infrared light with high transmittance.
1:基板 1: substrate
2:第一面 2: first side
3:第二面 3: second side
4:ZnS膜 4: ZnS film
4a:第一ZnS膜 4a: The first ZnS film
4b:第二ZnS膜 4b: Second ZnS film
5:Ge膜 5: Ge film
5a:第一Ge膜 5a: First Ge film
5b:第二Ge膜 5b: Second Ge film
6:DLC膜 6: DLC film
7、9:多層膜 7, 9: Multilayer film
8:抗反射膜 8: Anti-reflective film
10、11、12:光學構件 10, 11, 12: optical components
20、30:雷射加工機 20, 30: Laser processing machine
21:雷射振盪器 21: Laser oscillator
22:雷射光 22: Laser light
23:聚光透鏡 23: Condenser lens
24:保護窗 24: protection window
25:被加工物 25: processed objects
31:鏡筒 31: lens barrel
第1圖為顯示本發明實施態樣1之光學構件的構成之剖面圖。 Figure 1 is a cross-sectional view showing the configuration of the optical member of Embodiment 1 of the present invention.
第2圖為顯示實施態樣1之光學構件之其它構成之剖面圖。 FIG. 2 is a cross-sectional view showing another structure of the optical member of Embodiment 1. FIG.
第3圖為顯示於實施態樣1之光學構件的透射率的波長依賴性之例之圖。 FIG. 3 is a diagram showing an example of the wavelength dependence of the transmittance of the optical member in Embodiment 1. FIG.
第4圖為顯示實施態樣1的比較例之光學構件的透射率的波長依賴性之圖。 Figure 4 is a graph showing the wavelength dependence of the transmittance of the optical member of the comparative example of Embodiment 1.
第5圖為顯示本發明實施態樣2之光學構件的構成之剖面圖。
Fig. 5 is a cross-sectional view showing the structure of the optical member of
第6圖為顯示實施態樣2之光學構件的透射率的波長依賴性之例之圖。 Fig. 6 is a diagram showing an example of the wavelength dependence of the transmittance of the optical member in the second embodiment.
第7圖為顯示本發明之實施態樣3之雷射加工機之概略構成之圖。
Fig. 7 is a diagram showing a schematic configuration of a laser processing machine of
第8圖為顯示本發明之實施態樣4之雷射加工機之概略構成之圖。
Fig. 8 is a diagram showing a schematic configuration of a laser processing machine according to
以下基於圖式詳細說明本發明的實施態樣之光學構件及雷射加工機。另外,本發明並不限於以下之記敘,而可於不超脫於本發明之要旨的範圍中適當地變更。圖式所示之各部分的比例尺會有與實際情況不同之情形。 The optical component and the laser processing machine of the embodiment of the present invention will be described in detail below based on the drawings. In addition, the present invention is not limited to the following description, but can be appropriately changed within a range that does not deviate from the gist of the present invention. The scale of each part shown in the diagram may be different from the actual situation.
實施態樣1. Implementation status 1.
第1圖係顯示本發明之實施態樣1中之光學構件的構成之剖面圖。第1圖所示之光學構件10係具有:由鍺所構成之基板1、設於屬於基板1的主面之第一面2的多層膜7、以及設於基板1之中與第一面2為相反側之第二面3的多層膜7。另外,由鍺所構成之基板1係包括含有少量的雜質之鍺基板。主面係基板1之中光所射出之側的面。各多層膜7係具有屬於
鋅化合物膜之ZnS膜4、Ge膜5、DLC膜6這三種膜。Ge膜5係設於ZnS膜4及DLC膜6之間。
Fig. 1 is a cross-sectional view showing the configuration of the optical member in Embodiment 1 of the present invention. The
設於第一面2之多層膜7係由從第一面2側以ZnS膜4、Ge膜5、DLC膜6的順序積層之三層所構成。DLC膜6係構成基板1中的第一面2所朝向之側的光學構件10的外表面。
The
設於第二面3之多層膜7係由從第二面3側以ZnS膜4、Ge膜5、DLC膜6的順序積層之三層所構成。DLC膜6係構成基板1中的第二面3所朝向之側的光學構件10的外表面。
The
因為DLC係具有高硬度的物質,故DLC膜6可發揮高耐摩耗性。此外,因為DLC係具有高穩定性且與其它物質的反應性低的物質,故DLC膜6可發揮高耐腐蝕性。DLC膜6係藉由與其它物質的反應性低,而可弱化粉塵等異物的附著力。光學構件10變得能夠容易地除去附著於外表面之異物。光學構件10係藉由在外表面設置耐環境性優異的DLC膜6,而可得到高耐環境性。光學構件10係藉由劣化的抑制而變得能夠長期使用。
Since DLC is a material with high hardness, the
光學構件10係藉由使DLC膜6與和DLC膜6的密著性優異的Ge膜5接觸,而可確保基板1與多層膜7之密著性。光學構件10係可抑制起因於DLC膜6的壓縮應力之DLC膜6的剝離。
The
Ge膜5與ZnS膜4的密著性亦為優異。光學構件10係藉由使Ge膜5與ZnS膜4接觸,而可確保基板1與多層膜7之密著性。另外,光學構件10亦可具有ZnS膜4以外的鋅化合物膜來取代ZnS膜4。光學構件10亦可具有ZnS膜4以外之屬於鋅化合物膜之硒化鋅(ZnSe)膜。
在設有ZnSe膜的情況下,也是藉由Ge膜5與ZnSe膜之優異的密著性,而可以確保光學構件10的基板1與多層膜7之密著性。只要不對光學構件10的光學性能造成影響,則鋅化合物膜亦可摻雜有Zn、S以及Se以外的元素。
The adhesion between the
Ge對於紅外區域的光係具有高透射率。光學構件10藉由具有Ge製的基板1,而可能夠使紅外光以高透射率透射。此外,相較於ZnS製的基板,Ge製的基板1係具有高的熱傳導率。
Ge has a high transmittance to the light system in the infrared region. By having the substrate 1 made of Ge, the
就光學構件10被使用於雷射加工機的保護窗的情況而言,在利用雷射加工機連續地進行雷射加工時,基板1的熱傳導率愈低,則於光學構件10中會變得愈容易產生局部性的溫度上昇。光學構件10係基板1的熱傳導率愈低,則變得愈容易產生起因於溫度分布的熱透鏡效應。由於在光學構件10產生因為熱透鏡效應所致的折射率分布,雷射加工機變得難以進行高精度的加工。光學構件10係藉由具備具有高熱傳導率的Ge製的基板1,而變得能夠抑制熱透鏡效應。藉此,具有光學構件10的雷射加工機可以抑制於光學構件10中產生折射率分布,而變得能夠以高加工精度進行加工。若是不對光學構件10的光學性能、或雷射加工機的機械特性造成影響,則基板1亦可摻雜有Ge以外的元素。就構成多層膜7之各層而言亦是如此,若是不對光學構件10的光學性能、或雷射加工機的機械特性造成影響,則構成多層膜7之各層亦可摻雜有形成層的結晶之元素以外的元素。
In the case where the
基板1的形狀可為任意的形狀。就屬於雷射加工機的保護窗之光學構件10的情況而言,以雷射加工機的加工區的觀點來看,基板1的
形狀係以直徑為80mm至120mm的圓板形狀為適當。此外,從膜應力的觀點來看,基板1的厚度係以2mm至10mm為適當。
The shape of the substrate 1 may be any shape. In the case of the
形成多層膜7的方法,若是能夠在基板1形成ZnS膜4、Ge膜5與DLC膜6的方法即可,並不拘泥於何種方法。就多層膜7的形成而言,係可使用所謂的真空蒸鍍法以及濺鍍法之物理蒸鍍(Physical Vapor Deposition:PVD)、以及所謂的電漿CVD(Chemical Vapor Deposition)法之化學蒸鍍等一般已知的成膜方法。
The method of forming the
於多層膜7中,ZnS膜4的厚度係設為600nm至1000nm之範圍內,Ge膜5的厚度係設為10nm至70nm之範圍內,DLC膜6的厚度係設為50nm至300nm之範圍內。藉此,光學構件10可以活用光的干渉所致之效果,並以高透射率使紅外光透射。光學構件10係藉由具備Ge製的基板1以及將各層的厚度為設定為上述範圍之多層膜7,而可實現對於具有9μm至11μm的波長之CO2雷射光為97%以上的透射率。藉此,光學構件10可以滿足雷射加工機的保護窗所必須的光學特性。
In the
若是對光學構件10的光學性能、或雷射加工機的機械特性不造成影響,則光學構件10可設有第1圖所示之各層以外的層。此外,光學構件10若是在第一面2與第二面3之中的第一面2中設有多層膜7即可,在第二面3中亦可設有多層膜7以外的膜來取代多層膜7。
If it does not affect the optical performance of the
第2圖係顯示實施態樣1之光學構件之其它構成之剖面圖。第2圖所示之光學構件11,係具備設在基板1的第二面3之抗反射膜8。抗反射膜8係由從第二面3以YF3膜、Ge膜以及氟化鎂(MgF2)膜的順序
積層所構成。第2圖中,係省略構成抗反射膜8的各層之圖示。但是,抗反射膜8的構成不限於本變形例,若為具有抗反射功能者即可。
FIG. 2 is a cross-sectional view showing other configurations of the optical member of Embodiment 1. FIG. The
光學構件11係在基板1中光會入射之側的面之第二面3設置抗反射膜8,藉此能夠抑制入射至光學構件11的光的反射。就光學構件11被使用於雷射加工機的保護窗的情況而言,光學構件11係藉由在光學構件11之中朝向被加工物之側之外表面設置DLC膜6,而可以發揮能夠承受雷射加工時的環境之高耐環境性。
In the
形成抗反射膜8的方法若是能夠於基板1形成抗反射膜8的各層的方法即可,並不拘泥於何種方法。就抗反射膜8的形成而言,係可使用所謂的真空蒸鍍法以及濺鍍法之物理蒸鍍、以及所謂的電漿CVD法之化學蒸鍍等一般已知的成膜方法。
The method of forming the
其次,說明屬於實施態樣1之具體例之實施例1。實施例1的光學構件係具有多層膜7及抗反射膜8之光學構件11,其中,該多層膜7設於第一面2,該抗反射膜8設於第二面3。抗反射膜8對於具有9.3μm的波長之CO2雷射光係有99.5%以上的透射率。
Next, Embodiment 1 which is a specific example of Embodiment Mode 1 will be described. The optical component of Example 1 is an
於實施例1的抗反射膜8中,MgF2膜的厚度係設為200nm,Ge膜的厚度係設為130nm,YF3膜的厚度係設為650nm。於多層膜7中,ZnS膜4的厚度係設為800nm,Ge膜5的厚度係設為30nm,DLC膜6的厚度係設為200nm。ZnS膜4、Ge膜5以及抗反射膜8係使用真空蒸鍍法而形成者。DLC膜6係使用濺鍍法而形成者。基板1的形狀係設為直徑為90mm、厚度為5mm的圓板形狀。透射率係使用傅立葉轉換(Fourier transform)式紅外分光光度計來進行評估。
In the
第3圖係顯示於實施態樣1之光學構件的透射率的波長依賴性之例之圖。第3圖中,顯示實施例1之光學構件11的波長依賴性。第3圖所示之圖表的縱軸表示透射率,橫軸表示光的波長。依據第3圖所示之波長依賴性,在9.3μm的波長係實現了97.6%的透射率。因為雷射加工機的保護窗較佳為具有97%以上的透射率,所以光學構件11係滿足雷射加工機的保護窗所必須的光學特性。
FIG. 3 is a diagram showing an example of the wavelength dependence of the transmittance of the optical member in Embodiment 1. FIG. Figure 3 shows the wavelength dependence of the
在此,對實施例1的比較例進行說明。比較例的光學構件係設為具有ZnS製的基板與兩個Y2O3膜之光學構件。於ZnS製的基板的主面,從主面依序地積層有第一Y2O3膜、YF3膜、第二Y2O3膜、Ge膜以及DLC膜。第一Y2O3膜的厚度係設為30nm,YF3膜的厚度係設為600nm,第二Y2O3膜的厚度係設為30nm,Ge膜的厚度係設為30nm,DLC膜的厚度係設為200nm。ZnS製的基板的厚度係設為5mm。在ZnS製的基板中之與主面為相反側之面,係由從該面依序地積層有Y2O3膜、YF3膜以及MgF2膜。Y2O3膜的厚度係設為80nm,YF3膜的厚度係設為1300nm,MgF2膜的厚度係設為400nm。另外,對於比較例的光學構件的構成,則係省略其圖示。 Here, a comparative example of Example 1 will be described. The optical member of the comparative example is an optical member having a substrate made of ZnS and two Y 2 O 3 films. On the main surface of the ZnS substrate, a first Y 2 O 3 film, a YF 3 film, a second Y 2 O 3 film, a Ge film, and a DLC film are sequentially laminated from the main surface. The thickness of the first Y 2 O 3 film is set to 30 nm, the thickness of the YF 3 film is set to 600 nm, the thickness of the second Y 2 O 3 film is set to 30 nm, the thickness of the Ge film is set to 30 nm, and the thickness of the DLC film is The thickness is set to 200 nm. The thickness of the substrate made of ZnS is 5 mm. The surface of the ZnS substrate on the opposite side to the main surface has a Y 2 O 3 film, a YF 3 film, and a MgF 2 film laminated in this order. The thickness of the Y 2 O 3 film was 80 nm, the thickness of the YF 3 film was 1300 nm, and the thickness of the MgF 2 film was 400 nm. In addition, the illustration of the configuration of the optical member of the comparative example is omitted.
第4圖係顯示實施態樣1的比較例之光學構件的透射率的波長依賴性之圖。第4圖所示之圖表的縱軸係表示透射率,橫軸係表示光的波長。第4圖所示之波長依賴性係藉由使用薄膜計算軟體而進行光學構件的光學解析之結果。依據第3圖所示之波長依賴性,9.3μm的波長之透射率係未達95%。比較例的光學構件並未滿足雷射加工機的保護窗所必須的光學特性。 Fig. 4 is a graph showing the wavelength dependence of the transmittance of the optical member of the comparative example of Embodiment 1. The vertical axis of the graph shown in Fig. 4 represents transmittance, and the horizontal axis represents the wavelength of light. The wavelength dependence shown in Fig. 4 is the result of optical analysis of the optical component by using thin film calculation software. According to the wavelength dependence shown in Figure 3, the transmittance at a wavelength of 9.3μm is less than 95%. The optical member of the comparative example does not satisfy the optical characteristics necessary for the protective window of the laser processing machine.
相較於比較例的光學構件,實施例1的光學構件11係可以高透射率使紅外光透射,所以能夠減低光的吸收所致之局部性的溫度上昇。實施例1的光學構件11可使熱透鏡效應難以發生。雷射加工機係能夠藉由將實施例1的光學構件11使用在保護窗,而變得能夠進行高精度的加工。
Compared with the optical member of the comparative example, the
依據實施態樣1,光學構件10、11係具有多層膜7,而該多層膜7係由從基板1側以ZnS膜4、Ge膜5、DLC膜6的順序積層之三層所構成者,藉此,相較於在第一面2積層有兩個Y2O3膜的情況,係可使紅外光的透射率提高。藉此,光學構件10、11係可發揮不使用氧化物、且能夠以高透射率透射紅外光之效果。
According to Embodiment 1, the
實施態樣2.
第5圖係顯示本發明之實施態樣2中之光學構件的構成之剖面圖。在第5圖所示之光學構件12的第一面2係設有多層膜9,該多層膜9具有下述五個膜:兩個屬於ZnS膜之第一ZnS膜4a及第二ZnS膜4b、兩個屬於Ge膜第一Ge膜5a及第二Ge膜5b、以及一個DLC膜6。在實施態樣2中,係於與上述實施態樣1相同的構成要素賦予相同的符號,主要就與實施態樣1不同的構成進行說明。
Fig. 5 is a cross-sectional view showing the configuration of the optical member in
多層膜9係由從第一面2側以屬於第一鋅加工物膜之第一ZnS膜4a、第一Ge膜5a、屬於第二鋅加工物膜之第二ZnS膜4b、第二Ge膜5b、DLC膜6的順序積層之五層所構成。於第二面3係設有抗反射膜8。
The
於多層膜9中,第一ZnS膜4a的厚度係設為80nm至700nm之範圍內,第一Ge膜5a的厚度係設為400nm至1100nm之範圍內,第二
ZnS膜4b的厚度係設為600nm至1000nm之範圍內,第二Ge膜5b的厚度係設為10nm至70nm之範圍內,DLC膜6的厚度係設為50nm至300nm之範圍內。藉此,光學構件12可活用光的干渉所致之效果,而以高透射率使紅外光透射。光學構件12係具備Ge製的基板1、與被設定在上述的範圍的各層的厚度之多層膜9,藉此可對具有9μm至11μm的波長之CO2雷射光實現98%以上的透射率。藉此,光學構件12可滿足雷射加工機的保護窗所必須的光學特性。
In the
此外,光學構件12係藉由在第一ZnS膜4a以及第一Ge膜5a的組合上積層有第二ZnS膜4b以及第二Ge膜5b的組合,而可提升對於具有特定波長之光的透射率。在雷射加工機中,因為加工所使用的雷射光的波長是固定的,所以在光學構件12應用於雷射加工機的保護窗時,對於加工所使用的雷射光係可實現高的透射率。另外,於第二面3亦可設置實施態樣1之多層膜7或實施態樣2的多層膜9來取代抗反射膜8。
In addition, the
其次,說明屬於實施態樣2之具體例之實施例2。實施例2的光學構件12係具有設於第一面2之多層膜9及設於第二面3之抗反射膜8。於實施例2的多層膜9中,第一ZnS膜4a的厚度係設為115nm,第一Ge膜5a的厚度係設為830nm,第二ZnS膜4b的厚度係設為875nm,第二Ge膜5b的厚度係設為30nm,DLC膜6的厚度係設為100nm。第一ZnS膜4a、第二ZnS膜4b、第一Ge膜5a、第二Ge膜5b以及抗反射膜8係使用真空蒸鍍法所形成者。DLC膜6係使用濺鍍法所形成者。基板1的形狀係設成直徑為90mm、厚度為5mm的圓板形狀。透射率係使用傅立葉轉換紅外分光光度計而進行評估。
Next,
第6圖係顯示實施態樣2之光學構件中的透射率的波長依賴性之例之圖。第6圖係顯示實施例2的光學構件12的波長依賴性。第6圖所示之圖表的縱軸係表示透射率,橫軸係表示光的波長。依據第6圖所示之波長依賴性,對於9.3μm的波長係實現了98%以上的透射率。光學構件12滿足了雷射加工機的保護窗所必須的光學特性。
FIG. 6 is a diagram showing an example of the wavelength dependence of transmittance in the optical member of
依據實施態樣2,光學構件12係具有多層膜9,該多層膜9是由從基板1側以第一ZnS膜4a、第一Ge膜5a、第二ZnS膜4b、第二Ge膜5b、DLC膜6的順序積層之五層所構成者,藉此,相較於在第一面2積層有兩個Y2O3膜的情況,係可使紅外光的透射率提高。此外,光學構件12可使對於具有特定波長的光之透射率提升。藉此,光學構件12係可發揮不使用氧化物,且可以高透射率透射紅外光之效果。
According to the second embodiment, the
實施態樣3.
於實施態樣3中係說明具有光學構件之雷射加工機。第7圖係顯示本發明之實施態樣3中之雷射加工機的概略構成之圖。雷射加工機20係對被加工物25照射雷射光22,以將被加工物25進行加工。
In
第7圖所示之雷射加工機20係具有:屬於產生雷射光22的雷射光源之雷射振盪器21、傳導雷射光22的透鏡系統、以及會透射雷射光22的保護窗24。透鏡系統係包含將雷射光22進行聚光之聚光透鏡23。在第7圖中,係省略了透鏡系統當中之聚光透鏡23以外的透鏡的圖示。
The
保護窗24係實施態樣1中之光學構件10、11或實施態樣2中之光學構件12。雷射振盪器21係CO2雷射。雷射加工機20係進行所謂的開孔加工或切斷加工之雷射加工。CO2雷射因為有著能夠高輸出振盪、
能夠振盪出於樹脂的吸收率高的雷射光之特徵,故雷射加工機20適合於對印刷線路板的開孔加工。
The
保護窗24係設於雷射加工機20之對外部射出雷射光22的射出端。保護窗24位於聚光透鏡23與被加工物25之間。保護窗24會有靠近被加工物25至距離約莫100mm的位置。因此,保護窗24會曝露於加工時所產生的粉塵或濺射物飛散的環境下。於雷射加工機20當中,保護窗24之基板1中的第一面2側係被配置為朝向被加工物25,而保護窗24中朝向被加工物25側的外表面則係設有DLC膜6。保護窗24係藉由在朝向被加工物25側的外表面設有DLC膜6,而可發揮能夠承受雷射加工時的環境之高耐環境性。
The
保護窗24係被配置在構成雷射加工機20的全部光學構件當中最靠近被加工物25的位置。亦即,被加工物25與保護窗24之間中不存在光學構件。因此,保護窗24在產生起因於熱透鏡效應的折射率分布時,係難以藉由導入新的光學構件或是用以反饋雷射光輸出之機構來校正折射率分布。保護窗24係使用在實施態樣1或實施態樣2的光學構件10、11、12,藉此,無須追加用以校正折射率分布的要素,而可實現保護窗24所必須的光學特性。
The
雷射加工機20係藉由在保護窗24使用實施態樣1或實施態樣2的光學構件10、11、12,即使不為了提升加工精度而進行加工速度的限制亦能夠高精度地進行加工。藉此,雷射加工機20因為不用限制加工速度而可實現高生產性與高精度的加工。
The
依據實施態樣3,雷射加工機20係藉由具備實施態樣1或實施態樣2的光學構件10、11、12,而可得到高耐環境性與高光學特性。藉此,雷射加工機20係可在保護窗24保持適合的壽命,同時實現高精度的雷射加工。
According to the third embodiment, the
實施態樣4.
實施態樣4係說明設有被覆構件的雷射加工機。第8圖係顯示本發明之實施態樣4的雷射加工機之概略構成之圖。雷射加工機30係對被加工物25照射雷射光22,而將被加工物25進行加工。在實施態樣4中,係於與上述實施態樣3相同的構成要素賦予相同的符號,主要就與實施態樣3不同的構成進行說明。
雷射加工機30係具有屬於被覆構件之鏡筒31。鏡筒31係覆蓋聚光透鏡23的外周部與保護窗24的外周部。保護窗24係設於鏡筒31中之雷射光22所射出之側之端。聚光透鏡23係配置在鏡筒31之內部。雷射加工機30係藉由設有鏡筒31,而可防止在將被加工物25進行加工之際產生的粉塵或濺射物附著到聚光透鏡23。被覆構件若為能夠防止粉塵或濺射物對聚光透鏡23的附著之構件即可,並不限於鏡筒31。就被覆構件的材料及形狀而言,只要是能夠防止粉塵或濺射物對聚光透鏡23的附著之形狀即可。
The
依據實施態樣4,雷射加工機30係藉由具備實施態樣1或實施態樣2的光學構件10、11、12與鏡筒31,而可得到進一步的高耐環境性,同時可以得到高光學特性。
According to the
以上的實施態樣所示之結構係顯示本發明之內容之一例,亦可與其它公知技術進行組合,亦可在不超脫於本發明之要旨之範圍將構成之一部分予以省略或變更。 The structure shown in the above embodiment is an example of the content of the present invention, and can be combined with other known technologies, and part of the structure can be omitted or changed without departing from the scope of the present invention.
1:基板 1: substrate
2:第一面 2: first side
3:第二面 3: second side
4:ZnS膜 4: ZnS film
5:Ge膜 5: Ge film
6:DLC膜 6: DLC film
7:多層膜 7: Multilayer film
10:光學構件 10: Optical components
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