KR20180012261A - 반도체 디바이스 및 그 제조 방법 - Google Patents

반도체 디바이스 및 그 제조 방법 Download PDF

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Publication number
KR20180012261A
KR20180012261A KR1020177033165A KR20177033165A KR20180012261A KR 20180012261 A KR20180012261 A KR 20180012261A KR 1020177033165 A KR1020177033165 A KR 1020177033165A KR 20177033165 A KR20177033165 A KR 20177033165A KR 20180012261 A KR20180012261 A KR 20180012261A
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KR
South Korea
Prior art keywords
voltage
penetrating
penetrating electrode
electrodes
conductive layer
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Application number
KR1020177033165A
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English (en)
Korean (ko)
Inventor
츠네노리 시모토
Original Assignee
소니 세미컨덕터 솔루션즈 가부시키가이샤
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Publication of KR20180012261A publication Critical patent/KR20180012261A/ko
Withdrawn legal-status Critical Current

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    • H01L27/11556—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/80—Electrical treatments, e.g. for electroforming
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/50—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the boundary region between the core region and the peripheral circuit region
    • H01L27/11524—
    • H01L27/11529—
    • H01L27/11548—
    • H01L27/1157—
    • H01L27/11575—
    • H01L27/11582—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/50—EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/491—Antifuses, i.e. interconnections changeable from non-conductive to conductive
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series

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  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
KR1020177033165A 2015-05-27 2016-05-18 반도체 디바이스 및 그 제조 방법 Withdrawn KR20180012261A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2015-107672 2015-05-27
JP2015107672A JP6649700B2 (ja) 2015-05-27 2015-05-27 半導体装置およびその製造方法
PCT/JP2016/002430 WO2016189831A1 (en) 2015-05-27 2016-05-18 Semiconductor device and method of manufacturing the same

Publications (1)

Publication Number Publication Date
KR20180012261A true KR20180012261A (ko) 2018-02-05

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020177033165A Withdrawn KR20180012261A (ko) 2015-05-27 2016-05-18 반도체 디바이스 및 그 제조 방법

Country Status (4)

Country Link
US (1) US10340279B2 (https=)
JP (1) JP6649700B2 (https=)
KR (1) KR20180012261A (https=)
WO (1) WO2016189831A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12490437B2 (en) 2021-10-18 2025-12-02 Samsung Electronics Co., Ltd. Non-volatile memory device and method of manufacturing the same

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019054171A (ja) 2017-09-15 2019-04-04 東芝メモリ株式会社 記憶装置
US11527473B2 (en) 2019-11-12 2022-12-13 Samsung Electronics Co., Ltd. Semiconductor memory device including capacitor
KR102825706B1 (ko) 2019-11-12 2025-06-25 삼성전자주식회사 커패시터를 포함하는 반도체 메모리 장치
WO2023011561A1 (zh) * 2021-08-06 2023-02-09 南方科技大学 存储器
JP2023137598A (ja) * 2022-03-18 2023-09-29 キオクシア株式会社 半導体装置
CN117794233A (zh) * 2022-09-20 2024-03-29 华为技术有限公司 一种存储芯片、其操作方法及电子设备

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7420242B2 (en) * 2005-08-31 2008-09-02 Macronix International Co., Ltd. Stacked bit line dual word line nonvolatile memory
JP5091491B2 (ja) 2007-01-23 2012-12-05 株式会社東芝 不揮発性半導体記憶装置
JP2010225918A (ja) * 2009-03-24 2010-10-07 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
US8383512B2 (en) * 2011-01-19 2013-02-26 Macronix International Co., Ltd. Method for making multilayer connection structure
JP5751552B2 (ja) * 2011-03-04 2015-07-22 マクロニクス インターナショナル カンパニー リミテッド 積層した接続レベルを有する集積回路装置用マスク数の低減法
JP5550604B2 (ja) 2011-06-15 2014-07-16 株式会社東芝 三次元半導体装置及びその製造方法
KR101818975B1 (ko) * 2011-10-14 2018-03-02 삼성전자주식회사 수직형 반도체 소자의 제조 방법
JP2013187335A (ja) * 2012-03-07 2013-09-19 Toshiba Corp 半導体装置及びその製造方法
US9099538B2 (en) * 2013-09-17 2015-08-04 Macronix International Co., Ltd. Conductor with a plurality of vertical extensions for a 3D device
US8970040B1 (en) * 2013-09-26 2015-03-03 Macronix International Co., Ltd. Contact structure and forming method
JP2015076556A (ja) * 2013-10-10 2015-04-20 ソニー株式会社 メモリ装置、書込方法、読出方法
US9455265B2 (en) * 2013-11-27 2016-09-27 Macronix International Co., Ltd. Semiconductor 3D stacked structure and manufacturing method of the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12490437B2 (en) 2021-10-18 2025-12-02 Samsung Electronics Co., Ltd. Non-volatile memory device and method of manufacturing the same

Also Published As

Publication number Publication date
WO2016189831A1 (en) 2016-12-01
JP6649700B2 (ja) 2020-02-19
US20180102371A1 (en) 2018-04-12
US10340279B2 (en) 2019-07-02
JP2016225364A (ja) 2016-12-28

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