KR20160103937A - 반도체 집적회로 장치 및 그 제조 방법 - Google Patents

반도체 집적회로 장치 및 그 제조 방법 Download PDF

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Publication number
KR20160103937A
KR20160103937A KR1020160020778A KR20160020778A KR20160103937A KR 20160103937 A KR20160103937 A KR 20160103937A KR 1020160020778 A KR1020160020778 A KR 1020160020778A KR 20160020778 A KR20160020778 A KR 20160020778A KR 20160103937 A KR20160103937 A KR 20160103937A
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South Korea
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type
region
low
concentration
impurity
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KR1020160020778A
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English (en)
Korean (ko)
Inventor
히로후미 하라다
게이스케 우에무라
히사시 하세가와
신지로 가토
히데오 요시노
Original Assignee
에스아이아이 세미컨덕터 가부시키가이샤
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Publication of KR20160103937A publication Critical patent/KR20160103937A/ko
Withdrawn legal-status Critical Current

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    • H01L21/8234—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
    • H01L21/041—Making n- or p-doped regions
    • H01L21/0415—Making n- or p-doped regions using ion implantation
    • H01L27/0248—
    • H01L27/088—
    • H01L29/04—
    • H01L29/36—
    • H01L29/49—
    • H01L29/6659—
    • H01L29/7833—

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  • Engineering & Computer Science (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
KR1020160020778A 2015-02-25 2016-02-22 반도체 집적회로 장치 및 그 제조 방법 Withdrawn KR20160103937A (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JPJP-P-2015-035501 2015-02-25
JP2015035501 2015-02-25
JP2015037330 2015-02-26
JPJP-P-2015-037330 2015-02-26
JPJP-P-2015-194572 2015-09-30
JP2015194572A JP6595872B2 (ja) 2015-02-25 2015-09-30 半導体集積回路装置およびその製造方法

Publications (1)

Publication Number Publication Date
KR20160103937A true KR20160103937A (ko) 2016-09-02

Family

ID=56876760

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020160020778A Withdrawn KR20160103937A (ko) 2015-02-25 2016-02-22 반도체 집적회로 장치 및 그 제조 방법

Country Status (3)

Country Link
JP (1) JP6595872B2 (enExample)
KR (1) KR20160103937A (enExample)
TW (1) TWI675479B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180035155A (ko) * 2016-09-28 2018-04-05 에이블릭 가부시키가이샤 반도체 장치

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115547931B (zh) * 2022-12-05 2023-02-14 合肥晶合集成电路股份有限公司 半导体器件的制作方法、半导体器件以及晶体管

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008010443A (ja) 2006-06-27 2008-01-17 Seiko Instruments Inc 半導体集積回路装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010045130A (ja) * 2008-08-11 2010-02-25 Nec Electronics Corp 半導体装置および半導体装置の製造方法
JP5449942B2 (ja) * 2009-09-24 2014-03-19 セイコーインスツル株式会社 半導体装置およびその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008010443A (ja) 2006-06-27 2008-01-17 Seiko Instruments Inc 半導体集積回路装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180035155A (ko) * 2016-09-28 2018-04-05 에이블릭 가부시키가이샤 반도체 장치

Also Published As

Publication number Publication date
TW201705477A (zh) 2017-02-01
JP2016164967A (ja) 2016-09-08
TWI675479B (zh) 2019-10-21
JP6595872B2 (ja) 2019-10-23

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