JP6595872B2 - 半導体集積回路装置およびその製造方法 - Google Patents

半導体集積回路装置およびその製造方法 Download PDF

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Publication number
JP6595872B2
JP6595872B2 JP2015194572A JP2015194572A JP6595872B2 JP 6595872 B2 JP6595872 B2 JP 6595872B2 JP 2015194572 A JP2015194572 A JP 2015194572A JP 2015194572 A JP2015194572 A JP 2015194572A JP 6595872 B2 JP6595872 B2 JP 6595872B2
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type
region
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mos transistor
channel mos
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Japanese (ja)
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JP2016164967A (ja
JP2016164967A5 (enExample
Inventor
博文 原田
啓介 上村
尚 長谷川
伸二郎 加藤
英生 吉野
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Ablic Inc
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Ablic Inc
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Priority to TW105104138A priority Critical patent/TWI675479B/zh
Priority to KR1020160020778A priority patent/KR20160103937A/ko
Priority to US15/050,807 priority patent/US9698147B2/en
Priority to CN201610103191.3A priority patent/CN105914208B/zh
Publication of JP2016164967A publication Critical patent/JP2016164967A/ja
Priority to US15/598,670 priority patent/US9972625B2/en
Publication of JP2016164967A5 publication Critical patent/JP2016164967A5/ja
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  • Engineering & Computer Science (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
JP2015194572A 2015-02-25 2015-09-30 半導体集積回路装置およびその製造方法 Expired - Fee Related JP6595872B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
TW105104138A TWI675479B (zh) 2015-02-25 2016-02-05 半導體積體電路裝置及其製造方法
KR1020160020778A KR20160103937A (ko) 2015-02-25 2016-02-22 반도체 집적회로 장치 및 그 제조 방법
US15/050,807 US9698147B2 (en) 2015-02-25 2016-02-23 Semiconductor integrated circuit device having low and high withstanding-voltage MOS transistors
CN201610103191.3A CN105914208B (zh) 2015-02-25 2016-02-25 半导体集成电路装置及其制造方法
US15/598,670 US9972625B2 (en) 2015-02-25 2017-05-18 Method of manufacturing semiconductor integrated circuit device

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2015035501 2015-02-25
JP2015035501 2015-02-25
JP2015037330 2015-02-26
JP2015037330 2015-02-26

Publications (3)

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JP2016164967A JP2016164967A (ja) 2016-09-08
JP2016164967A5 JP2016164967A5 (enExample) 2018-09-20
JP6595872B2 true JP6595872B2 (ja) 2019-10-23

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JP2015194572A Expired - Fee Related JP6595872B2 (ja) 2015-02-25 2015-09-30 半導体集積回路装置およびその製造方法

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JP (1) JP6595872B2 (enExample)
KR (1) KR20160103937A (enExample)
TW (1) TWI675479B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6775369B2 (ja) * 2016-09-28 2020-10-28 エイブリック株式会社 半導体装置
CN115547931B (zh) * 2022-12-05 2023-02-14 合肥晶合集成电路股份有限公司 半导体器件的制作方法、半导体器件以及晶体管

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5080032B2 (ja) 2006-06-27 2012-11-21 セイコーインスツル株式会社 半導体集積回路装置
JP2010045130A (ja) * 2008-08-11 2010-02-25 Nec Electronics Corp 半導体装置および半導体装置の製造方法
JP5449942B2 (ja) * 2009-09-24 2014-03-19 セイコーインスツル株式会社 半導体装置およびその製造方法

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Publication number Publication date
JP2016164967A (ja) 2016-09-08
TWI675479B (zh) 2019-10-21
KR20160103937A (ko) 2016-09-02
TW201705477A (zh) 2017-02-01

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