TWI675479B - 半導體積體電路裝置及其製造方法 - Google Patents

半導體積體電路裝置及其製造方法 Download PDF

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Publication number
TWI675479B
TWI675479B TW105104138A TW105104138A TWI675479B TW I675479 B TWI675479 B TW I675479B TW 105104138 A TW105104138 A TW 105104138A TW 105104138 A TW105104138 A TW 105104138A TW I675479 B TWI675479 B TW I675479B
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TW
Taiwan
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type
range
concentration
mos transistor
aforementioned
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TW105104138A
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English (en)
Chinese (zh)
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TW201705477A (zh
Inventor
原田博文
Hirofumi Harada
上村啓介
Keisuke Uemura
長谷川尚
Hisashi Hasegawa
加藤伸二郎
Shinjiro Kato
吉野英生
Hideo Yoshino
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日商艾普凌科有限公司
Ablic Inc.
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Publication of TWI675479B publication Critical patent/TWI675479B/zh

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
TW105104138A 2015-02-25 2016-02-05 半導體積體電路裝置及其製造方法 TWI675479B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2015-035501 2015-02-25
JP2015035501 2015-02-25
JP2015037330 2015-02-26
JP2015-037330 2015-02-26
JP2015194572A JP6595872B2 (ja) 2015-02-25 2015-09-30 半導体集積回路装置およびその製造方法
JP2015-194572 2015-09-30

Publications (2)

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TW201705477A TW201705477A (zh) 2017-02-01
TWI675479B true TWI675479B (zh) 2019-10-21

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TW105104138A TWI675479B (zh) 2015-02-25 2016-02-05 半導體積體電路裝置及其製造方法

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JP (1) JP6595872B2 (enExample)
KR (1) KR20160103937A (enExample)
TW (1) TWI675479B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6775369B2 (ja) * 2016-09-28 2020-10-28 エイブリック株式会社 半導体装置
CN115547931B (zh) * 2022-12-05 2023-02-14 合肥晶合集成电路股份有限公司 半导体器件的制作方法、半导体器件以及晶体管

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100032754A1 (en) * 2008-08-11 2010-02-11 Nec Electronics Corporation Semiconductor device and method of manufacturing the semiconductor device
US8541279B2 (en) * 2009-09-24 2013-09-24 Seiko Instruments Inc. Method for manufacturing a semiconductor device having high-voltage and low-voltage transistors

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5080032B2 (ja) 2006-06-27 2012-11-21 セイコーインスツル株式会社 半導体集積回路装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100032754A1 (en) * 2008-08-11 2010-02-11 Nec Electronics Corporation Semiconductor device and method of manufacturing the semiconductor device
US8541279B2 (en) * 2009-09-24 2013-09-24 Seiko Instruments Inc. Method for manufacturing a semiconductor device having high-voltage and low-voltage transistors

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JP2016164967A (ja) 2016-09-08
KR20160103937A (ko) 2016-09-02
JP6595872B2 (ja) 2019-10-23
TW201705477A (zh) 2017-02-01

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