KR20150145257A - 강유전체 메모리 소자 - Google Patents

강유전체 메모리 소자 Download PDF

Info

Publication number
KR20150145257A
KR20150145257A KR1020157033074A KR20157033074A KR20150145257A KR 20150145257 A KR20150145257 A KR 20150145257A KR 1020157033074 A KR1020157033074 A KR 1020157033074A KR 20157033074 A KR20157033074 A KR 20157033074A KR 20150145257 A KR20150145257 A KR 20150145257A
Authority
KR
South Korea
Prior art keywords
ferroelectric
polymer
vdf
polymers
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020157033074A
Other languages
English (en)
Korean (ko)
Inventor
파브리스 도밍게스 도스 산토스
티에리 란누젤
Original Assignee
아르끄마 프랑스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아르끄마 프랑스 filed Critical 아르끄마 프랑스
Publication of KR20150145257A publication Critical patent/KR20150145257A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • H01L27/11585—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/14—Organic dielectrics
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F214/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
    • C08F214/18—Monomers containing fluorine
    • C08F214/22—Vinylidene fluoride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/14—Organic dielectrics
    • H01G4/18—Organic dielectrics of synthetic material, e.g. derivatives of cellulose
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/06—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors
    • H01L21/28291—
    • H01L27/11502—
    • H01L27/285—
    • H01L28/40—
    • H01L28/55—
    • H01L29/516—
    • H01L29/6684—
    • H01L29/861—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0415—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having ferroelectric gate insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/701—IGFETs having ferroelectric gate insulators, e.g. ferroelectric FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/033—Manufacture or treatment of data-storage electrodes comprising ferroelectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/689—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having ferroelectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/20—Organic diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/151—Copolymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/202—Integrated devices comprising a common active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Semiconductor Memories (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Formation Of Insulating Films (AREA)
KR1020157033074A 2013-04-19 2014-04-16 강유전체 메모리 소자 Ceased KR20150145257A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1353571 2013-04-19
FR1353571A FR3004854B1 (fr) 2013-04-19 2013-04-19 Dispositif de memoire ferroelectrique
PCT/FR2014/050926 WO2014170606A1 (fr) 2013-04-19 2014-04-16 Dispositif de memoire ferroelectrique

Publications (1)

Publication Number Publication Date
KR20150145257A true KR20150145257A (ko) 2015-12-29

Family

ID=48782411

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157033074A Ceased KR20150145257A (ko) 2013-04-19 2014-04-16 강유전체 메모리 소자

Country Status (7)

Country Link
US (1) US10199384B2 (cg-RX-API-DMAC7.html)
EP (1) EP2987178A1 (cg-RX-API-DMAC7.html)
JP (1) JP2016522569A (cg-RX-API-DMAC7.html)
KR (1) KR20150145257A (cg-RX-API-DMAC7.html)
CN (1) CN105283945B (cg-RX-API-DMAC7.html)
FR (1) FR3004854B1 (cg-RX-API-DMAC7.html)
WO (1) WO2014170606A1 (cg-RX-API-DMAC7.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10636471B2 (en) 2016-04-20 2020-04-28 Micron Technology, Inc. Memory arrays, ferroelectric transistors, and methods of reading and writing relative to memory cells of memory arrays
KR102519699B1 (ko) * 2016-12-02 2023-04-07 카버 싸이언티픽, 아이엔씨. 메모리 장치 및 용량성 에너지 저장 장치
US11683987B2 (en) 2017-06-16 2023-06-20 Carrier Corporation Electrocaloric heat transfer system comprising copolymers
CN110444397B (zh) * 2019-07-26 2022-06-21 上海工程技术大学 一种线电极结构的有机铁电薄膜电容器及其制备方法
WO2021184205A1 (zh) * 2020-03-17 2021-09-23 华为技术有限公司 平面存储器、立体存储器以及电子设备
US12108605B2 (en) * 2022-08-19 2024-10-01 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device and method of forming the same

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2538157A1 (fr) 1982-12-15 1984-06-22 Saint Louis Inst Procede et dispositif pour polariser des materiaux ferroelectriques
JP2773215B2 (ja) * 1989-04-07 1998-07-09 ダイキン工業株式会社 高分子誘電体材料
US6787238B2 (en) * 1998-11-18 2004-09-07 The Penn State Research Foundation Terpolymer systems for electromechanical and dielectric applications
US6355749B1 (en) 2000-06-02 2002-03-12 The Penn State Research Foundation Semicrystalline ferroelectric fluoropolymers and process for preparing same
NO20005980L (no) 2000-11-27 2002-05-28 Thin Film Electronics Ab Ferroelektrisk minnekrets og fremgangsmåte ved dens fremstilling
AU2003281556A1 (en) * 2002-07-23 2004-02-09 Matsushita Electric Industrial Co., Ltd. Ferroelectric gate device
WO2004078814A2 (en) * 2003-03-04 2004-09-16 Honeywell International Inc. Fluorinated polymers, methods of production and uses in ferroelectric devices thereof
JP2007525337A (ja) 2003-12-22 2007-09-06 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 強誘電性ポリマー層のパターニング方法
NO324809B1 (no) * 2005-05-10 2007-12-10 Thin Film Electronics Asa Fremgangsmate til dannelse av ferroelektriske tynnfilmer, bruk av fremgangsmaten og et minne med et minnemateriale av ferroelektrisk oligomer
NO324539B1 (no) * 2005-06-14 2007-11-19 Thin Film Electronics Asa Fremgangsmate i fabrikasjonen av en ferroelektrisk minneinnretning
WO2007078916A2 (en) * 2005-12-28 2007-07-12 The Penn State Research Foundation High electric energy density polymer capacitors with fast discharge speed and high efficiency based on unique poly(vinylidene fluoride) copolymers and terpolymers as dielectric materials
JP4124243B2 (ja) 2006-06-05 2008-07-23 セイコーエプソン株式会社 記憶素子の製造方法、記憶素子、記憶装置、および電子機器、ならびにトランジスタの製造方法
US7842390B2 (en) 2006-10-03 2010-11-30 The Penn State Research Foundation Chain end functionalized fluoropolymers having good electrical properties and good chemical reactivity
US20110110015A1 (en) 2007-04-11 2011-05-12 The Penn State Research Foundation Methods to improve the efficiency and reduce the energy losses in high energy density capacitor films and articles comprising the same
EP1995736A1 (en) 2007-05-22 2008-11-26 Rijksuniversiteit Groningen Ferro-electric device and modulatable injection barrier
CN101471180A (zh) * 2007-12-28 2009-07-01 中国科学院上海技术物理研究所 一种三元铁电聚合物薄膜材料的制备方法
FR2944285B1 (fr) 2009-04-09 2011-11-25 Francois Bauer Procede de fabrication de terpolymeres a base de vdf, trfe et cfe ou ctfe
KR101826388B1 (ko) 2010-12-22 2018-02-06 솔베이 스페셜티 폴리머스 이태리 에스.피.에이. 비닐리덴 플루오라이드 및 트리플루오로에틸렌 중합체

Also Published As

Publication number Publication date
US10199384B2 (en) 2019-02-05
FR3004854A1 (fr) 2014-10-24
JP2016522569A (ja) 2016-07-28
FR3004854B1 (fr) 2015-04-17
EP2987178A1 (fr) 2016-02-24
US20160071852A1 (en) 2016-03-10
CN105283945B (zh) 2019-10-08
WO2014170606A1 (fr) 2014-10-23
CN105283945A (zh) 2016-01-27

Similar Documents

Publication Publication Date Title
KR101802692B1 (ko) 강유전체 커패시터-계 메모리 기기
KR20150145257A (ko) 강유전체 메모리 소자
KR100504612B1 (ko) 강유전성 메모리 회로 및 그의 제조 방법
KR101810545B1 (ko) 2-단계 온도 공정을 사용한 박막 강유전체 장치의 제조 방법
US9434801B2 (en) Polymer and polymer actuator comprising the same
JP6421169B2 (ja) 疲労特性および破壊特性が改善された強誘電体キャパシタ
TWI871273B (zh) 含有介電常數高並且溫度穩定之介電層的場效應有機電晶體
KR20170034435A (ko) 앰비언트-로버스트 용액을 이용한 나노단위 유기적 강유전체 막의 제조방법
EP3327068A1 (en) Film
US5635812A (en) Thermal sensing polymeric capacitor
US20230022870A1 (en) Electrocaloric polymer, ink and film comprising same, and uses thereof
Kim et al. Fabrication and characterization of ferroelectric multilayered films fabricated by using solvent blending
WO2006049261A1 (ja) メモリー素子及びその製造方法
KR101075620B1 (ko) Ｐ(Ｓ-ｒ-ＭＭＡ)를 삽입층으로 사용하는 강유전성 전계효과 트랜지스터 및 그 제조방법
US20220073663A1 (en) Electroactive fluoropolymers comprising polarizable groups
JP2009510761A (ja) 強誘電体半導体装置のための有機物
Tian et al. Effect of DC Bias on Dielectric Response in Relaxor Ferroelectric Terpolymer Films
Khan Polymer Ferroelectric Memory for Flexible Electronics
Sasidaran et al. Optical characterisation and device application studies of quaterthiophene (QT) thin films
CN108428622A (zh) 一种高热释电系数pvdf基多层膜的制备方法
Wu High energy density, and low loss polymer dielectrics for energy storage capacitors and organic electronics

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

R18 Changes to party contact information recorded

Free format text: ST27 STATUS EVENT CODE: A-3-3-R10-R18-OTH-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000