JP2016522569A - 強誘電体メモリ装置 - Google Patents

強誘電体メモリ装置 Download PDF

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Publication number
JP2016522569A
JP2016522569A JP2016508221A JP2016508221A JP2016522569A JP 2016522569 A JP2016522569 A JP 2016522569A JP 2016508221 A JP2016508221 A JP 2016508221A JP 2016508221 A JP2016508221 A JP 2016508221A JP 2016522569 A JP2016522569 A JP 2016522569A
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ferroelectric
unit
polymer
vdf
polymers
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JP2016508221A
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Japanese (ja)
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JP2016522569A5 (cg-RX-API-DMAC7.html
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ドミンゲス・ドス・サントス，ファブリス
ラニュゼル，ティエリー
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Arkema France SA
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Arkema France SA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/14—Organic dielectrics
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F214/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
    • C08F214/18—Monomers containing fluorine
    • C08F214/22—Vinylidene fluoride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/14—Organic dielectrics
    • H01G4/18—Organic dielectrics of synthetic material, e.g. derivatives of cellulose
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/06—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0415—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having ferroelectric gate insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/701—IGFETs having ferroelectric gate insulators, e.g. ferroelectric FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/033—Manufacture or treatment of data-storage electrodes comprising ferroelectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/689—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having ferroelectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/20—Organic diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/151—Copolymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/202—Integrated devices comprising a common active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Semiconductor Memories (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Formation Of Insulating Films (AREA)
JP2016508221A 2013-04-19 2014-04-16 強誘電体メモリ装置 Pending JP2016522569A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1353571 2013-04-19
FR1353571A FR3004854B1 (fr) 2013-04-19 2013-04-19 Dispositif de memoire ferroelectrique
PCT/FR2014/050926 WO2014170606A1 (fr) 2013-04-19 2014-04-16 Dispositif de memoire ferroelectrique

Publications (2)

Publication Number Publication Date
JP2016522569A true JP2016522569A (ja) 2016-07-28
JP2016522569A5 JP2016522569A5 (cg-RX-API-DMAC7.html) 2017-04-27

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JP2016508221A Pending JP2016522569A (ja) 2013-04-19 2014-04-16 強誘電体メモリ装置

Country Status (7)

Country Link
US (1) US10199384B2 (cg-RX-API-DMAC7.html)
EP (1) EP2987178A1 (cg-RX-API-DMAC7.html)
JP (1) JP2016522569A (cg-RX-API-DMAC7.html)
KR (1) KR20150145257A (cg-RX-API-DMAC7.html)
CN (1) CN105283945B (cg-RX-API-DMAC7.html)
FR (1) FR3004854B1 (cg-RX-API-DMAC7.html)
WO (1) WO2014170606A1 (cg-RX-API-DMAC7.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10636471B2 (en) 2016-04-20 2020-04-28 Micron Technology, Inc. Memory arrays, ferroelectric transistors, and methods of reading and writing relative to memory cells of memory arrays
SG10201912363TA (en) 2016-12-02 2020-02-27 Carver Scientific Inc Memory device and capacitive energy storage device
US11683987B2 (en) 2017-06-16 2023-06-20 Carrier Corporation Electrocaloric heat transfer system comprising copolymers
CN110444397B (zh) * 2019-07-26 2022-06-21 上海工程技术大学 一种线电极结构的有机铁电薄膜电容器及其制备方法
CN115053292A (zh) * 2020-03-17 2022-09-13 华为技术有限公司 平面存储器、立体存储器以及电子设备
US12108605B2 (en) * 2022-08-19 2024-10-01 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device and method of forming the same

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02265906A (ja) * 1989-04-07 1990-10-30 Daikin Ind Ltd 高分子誘電体材料
US6355749B1 (en) * 2000-06-02 2002-03-12 The Penn State Research Foundation Semicrystalline ferroelectric fluoropolymers and process for preparing same
JP2007525337A (ja) * 2003-12-22 2007-09-06 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 強誘電性ポリマー層のパターニング方法
JP2007324543A (ja) * 2006-06-05 2007-12-13 Seiko Epson Corp 記憶素子の製造方法、記憶素子、記憶装置、および電子機器、ならびにトランジスタの製造方法
JP2010528471A (ja) * 2007-05-22 2010-08-19 レイクスユニヴェルシテイト フローニンゲン 強誘電体デバイスおよび可変調注入障壁
WO2012084579A1 (en) * 2010-12-22 2012-06-28 Solvay Specialty Polymers Italy S.P.A. Vinylidene fluoride and trifluoroethylene polymers

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2538157A1 (fr) 1982-12-15 1984-06-22 Saint Louis Inst Procede et dispositif pour polariser des materiaux ferroelectriques
US6787238B2 (en) * 1998-11-18 2004-09-07 The Penn State Research Foundation Terpolymer systems for electromechanical and dielectric applications
NO20005980L (no) 2000-11-27 2002-05-28 Thin Film Electronics Ab Ferroelektrisk minnekrets og fremgangsmåte ved dens fremstilling
JP3680282B2 (ja) * 2002-07-23 2005-08-10 松下電器産業株式会社 強誘電体ゲートデバイス
WO2004078814A2 (en) * 2003-03-04 2004-09-16 Honeywell International Inc. Fluorinated polymers, methods of production and uses in ferroelectric devices thereof
NO324809B1 (no) * 2005-05-10 2007-12-10 Thin Film Electronics Asa Fremgangsmate til dannelse av ferroelektriske tynnfilmer, bruk av fremgangsmaten og et minne med et minnemateriale av ferroelektrisk oligomer
NO324539B1 (no) * 2005-06-14 2007-11-19 Thin Film Electronics Asa Fremgangsmate i fabrikasjonen av en ferroelektrisk minneinnretning
KR20080083325A (ko) * 2005-12-28 2008-09-17 더 펜 스테이트 리서어치 파운데이션 유전 물질로서 독특한 폴리(비닐리덴 플루오라이드)공중합체 및 3원 공중합체에 기초한, 빠른 방전 속도 및높은 효율을 갖는 고 전기 에너지 밀도 중합체 축전지
US7842390B2 (en) * 2006-10-03 2010-11-30 The Penn State Research Foundation Chain end functionalized fluoropolymers having good electrical properties and good chemical reactivity
US20110110015A1 (en) 2007-04-11 2011-05-12 The Penn State Research Foundation Methods to improve the efficiency and reduce the energy losses in high energy density capacitor films and articles comprising the same
CN101471180A (zh) * 2007-12-28 2009-07-01 中国科学院上海技术物理研究所 一种三元铁电聚合物薄膜材料的制备方法
FR2944285B1 (fr) 2009-04-09 2011-11-25 Francois Bauer Procede de fabrication de terpolymeres a base de vdf, trfe et cfe ou ctfe

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02265906A (ja) * 1989-04-07 1990-10-30 Daikin Ind Ltd 高分子誘電体材料
US6355749B1 (en) * 2000-06-02 2002-03-12 The Penn State Research Foundation Semicrystalline ferroelectric fluoropolymers and process for preparing same
JP2007525337A (ja) * 2003-12-22 2007-09-06 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 強誘電性ポリマー層のパターニング方法
JP2007324543A (ja) * 2006-06-05 2007-12-13 Seiko Epson Corp 記憶素子の製造方法、記憶素子、記憶装置、および電子機器、ならびにトランジスタの製造方法
JP2010528471A (ja) * 2007-05-22 2010-08-19 レイクスユニヴェルシテイト フローニンゲン 強誘電体デバイスおよび可変調注入障壁
WO2012084579A1 (en) * 2010-12-22 2012-06-28 Solvay Specialty Polymers Italy S.P.A. Vinylidene fluoride and trifluoroethylene polymers

Also Published As

Publication number Publication date
EP2987178A1 (fr) 2016-02-24
WO2014170606A1 (fr) 2014-10-23
US20160071852A1 (en) 2016-03-10
KR20150145257A (ko) 2015-12-29
US10199384B2 (en) 2019-02-05
CN105283945B (zh) 2019-10-08
CN105283945A (zh) 2016-01-27
FR3004854A1 (fr) 2014-10-24
FR3004854B1 (fr) 2015-04-17

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