KR20150098230A - 유기막의 에칭 방법 - Google Patents

유기막의 에칭 방법 Download PDF

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Publication number
KR20150098230A
KR20150098230A KR1020150024349A KR20150024349A KR20150098230A KR 20150098230 A KR20150098230 A KR 20150098230A KR 1020150024349 A KR1020150024349 A KR 1020150024349A KR 20150024349 A KR20150024349 A KR 20150024349A KR 20150098230 A KR20150098230 A KR 20150098230A
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KR
South Korea
Prior art keywords
etching
organic film
film
gas
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020150024349A
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English (en)
Korean (ko)
Inventor
미치하루 야마모토
슌이치 다테마쓰
?이치 다테마쓰
류스케 야마시타
노리히코 하마다
고에이 겜바
Original Assignee
아이치 세이코우 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아이치 세이코우 가부시키가이샤 filed Critical 아이치 세이코우 가부시키가이샤
Publication of KR20150098230A publication Critical patent/KR20150098230A/ko
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • H01L21/31138—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
    • H01L21/31056—
    • H01L21/3121—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
KR1020150024349A 2014-02-19 2015-02-17 유기막의 에칭 방법 Withdrawn KR20150098230A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2014-029708 2014-02-19
JP2014029708A JP6331452B2 (ja) 2014-02-19 2014-02-19 有機膜のエッチング方法

Publications (1)

Publication Number Publication Date
KR20150098230A true KR20150098230A (ko) 2015-08-27

Family

ID=52465290

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150024349A Withdrawn KR20150098230A (ko) 2014-02-19 2015-02-17 유기막의 에칭 방법

Country Status (4)

Country Link
US (1) US9376748B2 (https=)
EP (1) EP2911185B1 (https=)
JP (1) JP6331452B2 (https=)
KR (1) KR20150098230A (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI578547B (zh) * 2015-09-10 2017-04-11 旺玖科技股份有限公司 電磁阻抗感測元件及其製作方法
TWI545332B (zh) * 2015-09-10 2016-08-11 旺玖科技股份有限公司 電磁阻抗感測元件及其製作方法
JP7321059B2 (ja) * 2019-11-06 2023-08-04 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP2025525607A (ja) * 2022-07-22 2025-08-05 ラム リサーチ コーポレーション シミュレートされたボッシュプロセスによる高アスペクト比炭素エッチング
US20240304440A1 (en) * 2023-03-06 2024-09-12 Fabric8Labs, Inc. Electrochemical-additive manufacturing systems with protected electrode arrays

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3360168B2 (ja) * 1999-04-08 2002-12-24 ミネベア株式会社 磁気インピーダンス素子
JP2001358218A (ja) * 2000-04-13 2001-12-26 Canon Inc 有機膜のエッチング方法及び素子の製造方法
JP2005079192A (ja) 2003-08-28 2005-03-24 Ulvac Japan Ltd 有機膜のドライエッチング方法
US7205226B1 (en) * 2005-02-24 2007-04-17 Lam Research Corporation Sacrificial layer for protection during trench etch
MY148830A (en) * 2006-08-22 2013-06-14 Lam Res Corp Method for plasma etching performance enhancement
JP5067068B2 (ja) * 2007-08-17 2012-11-07 東京エレクトロン株式会社 半導体装置の製造方法及び記憶媒体
US8277670B2 (en) * 2008-05-13 2012-10-02 Lam Research Corporation Plasma process with photoresist mask pretreatment
WO2010097932A1 (ja) * 2009-02-27 2010-09-02 愛知製鋼株式会社 マグネトインピーダンスセンサ素子及びその製造方法
US7759239B1 (en) * 2009-05-05 2010-07-20 Taiwan Semiconductor Manufacturing Company, Ltd. Method of reducing a critical dimension of a semiconductor device
JP2011151263A (ja) * 2010-01-22 2011-08-04 Tokyo Electron Ltd エッチング方法、エッチング装置及びリング部材
JP2013046006A (ja) * 2011-08-26 2013-03-04 Elpida Memory Inc 半導体装置及びその製造方法
JP5912616B2 (ja) * 2012-02-08 2016-04-27 株式会社ジェイデバイス 半導体装置及びその製造方法

Also Published As

Publication number Publication date
EP2911185B1 (en) 2017-12-13
JP2015154054A (ja) 2015-08-24
US20150232984A1 (en) 2015-08-20
US9376748B2 (en) 2016-06-28
EP2911185A1 (en) 2015-08-26
JP6331452B2 (ja) 2018-05-30

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