KR20150097622A - 증폭기 캐스코드 디바이스들의 정전기 방전 보호 - Google Patents

증폭기 캐스코드 디바이스들의 정전기 방전 보호 Download PDF

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Publication number
KR20150097622A
KR20150097622A KR1020157018760A KR20157018760A KR20150097622A KR 20150097622 A KR20150097622 A KR 20150097622A KR 1020157018760 A KR1020157018760 A KR 1020157018760A KR 20157018760 A KR20157018760 A KR 20157018760A KR 20150097622 A KR20150097622 A KR 20150097622A
Authority
KR
South Korea
Prior art keywords
transistor
coupled
drain
diode
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR1020157018760A
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English (en)
Korean (ko)
Inventor
히만수 카트리
오자스 엠. 촉시
웨이 추오
Original Assignee
퀄컴 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 퀄컴 인코포레이티드 filed Critical 퀄컴 인코포레이티드
Publication of KR20150097622A publication Critical patent/KR20150097622A/ko
Abandoned legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/043—Protection of over-voltage protection device by short-circuiting
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
KR1020157018760A 2012-12-19 2013-12-19 증폭기 캐스코드 디바이스들의 정전기 방전 보호 Abandoned KR20150097622A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/720,836 US9106072B2 (en) 2012-12-19 2012-12-19 Electrostatic discharge protection of amplifier cascode devices
US13/720,836 2012-12-19
PCT/US2013/076715 WO2014100491A1 (en) 2012-12-19 2013-12-19 Electrostatic discharge protection of amplifier cascode devices

Publications (1)

Publication Number Publication Date
KR20150097622A true KR20150097622A (ko) 2015-08-26

Family

ID=49943569

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157018760A Abandoned KR20150097622A (ko) 2012-12-19 2013-12-19 증폭기 캐스코드 디바이스들의 정전기 방전 보호

Country Status (6)

Country Link
US (1) US9106072B2 (cg-RX-API-DMAC10.html)
EP (1) EP2936678A1 (cg-RX-API-DMAC10.html)
JP (1) JP6584955B2 (cg-RX-API-DMAC10.html)
KR (1) KR20150097622A (cg-RX-API-DMAC10.html)
CN (1) CN104885359A (cg-RX-API-DMAC10.html)
WO (1) WO2014100491A1 (cg-RX-API-DMAC10.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102044715B1 (ko) * 2017-02-28 2019-11-14 가부시키가이샤 무라타 세이사쿠쇼 반도체 장치
KR102066008B1 (ko) * 2018-07-16 2020-01-14 주식회사 다이얼로그 세미컨덕터 코리아 최대 정격 성능이 개선된 lna
US10862444B2 (en) 2018-07-10 2020-12-08 Samsung Electro-Mechanics Co., Ltd. Amplification device of cascode structure

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WO2006002347A1 (en) 2004-06-23 2006-01-05 Peregrine Semiconductor Corporation Integrated rf front end
US9093966B1 (en) * 2013-09-17 2015-07-28 M/A-Com Technology Solutions Holdings, Inc. ESD protection circuit for cascode amplifiers
US9722552B2 (en) * 2014-07-10 2017-08-01 Qorvo Us, Inc. Linear FET feedback amplifier
CN109075751B (zh) * 2016-03-30 2022-06-07 株式会社村田制作所 高频信号放大电路、功率放大模块、前端电路及通信装置
EP3367562A1 (en) * 2017-02-22 2018-08-29 Comet AG High power amplifier circuit with protective feedback circuit
US10404313B1 (en) * 2018-02-21 2019-09-03 Analog Devices, Inc. Low noise amplifiers with output limiting
CN111711422A (zh) * 2020-04-13 2020-09-25 广州慧智微电子有限公司 一种功率放大器的电路
CN115699566A (zh) * 2020-04-13 2023-02-03 天工方案公司 具有输入功率保护的放大器
US11289472B2 (en) 2020-07-30 2022-03-29 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit with electrostatic discharge protection
US20250096737A1 (en) * 2023-09-19 2025-03-20 Qualcomm Incorporated Low-noise amplifier (lna) input impedance improvement using coupling between output inductor and degeneration inductor
US12671460B2 (en) * 2024-03-28 2026-06-30 Silicon Laboratories Inc. Configurable transmit-receive switch for a transceiver
CN122348728A (zh) * 2026-06-08 2026-07-07 深圳飞骧科技股份有限公司 抗大功率击穿的低噪声放大器及射频前端模组

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US5382916A (en) * 1991-10-30 1995-01-17 Harris Corporation Differential voltage follower
JPH07170654A (ja) * 1993-12-14 1995-07-04 Fuji Electric Co Ltd 半導体装置の過電圧制限回路
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JP3988914B2 (ja) * 1999-04-28 2007-10-10 株式会社ルネサステクノロジ 静電破壊保護回路を有する半導体集積回路
JP3926975B2 (ja) * 1999-09-22 2007-06-06 株式会社東芝 スタック型ｍｏｓトランジスタ保護回路
US6327126B1 (en) * 2000-01-28 2001-12-04 Motorola, Inc. Electrostatic discharge circuit
US6529059B1 (en) * 2000-07-26 2003-03-04 Agere Systems Inc. Output stage ESD protection for an integrated circuit
US6498533B1 (en) * 2000-09-28 2002-12-24 Koninklijke Philips Electronics N.V. Bootstrapped dual-gate class E amplifier circuit
US6496074B1 (en) * 2000-09-28 2002-12-17 Koninklijke Philips Electronics N.V. Cascode bootstrapped analog power amplifier circuit
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US6894567B2 (en) * 2001-12-04 2005-05-17 Koninklijke Philips Electronics N.V. ESD protection circuit for use in RF CMOS IC design
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WO2007119209A1 (en) * 2006-04-14 2007-10-25 Nxp B.V. Esd protected rf transistor
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KR100801872B1 (ko) 2006-10-30 2008-02-11 지씨티 세미컨덕터 인코포레이티드 선형성이 개선된 저잡음 증폭기
US8262900B2 (en) * 2006-12-14 2012-09-11 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US7541875B2 (en) 2007-05-11 2009-06-02 Intel Corporation High-linearity low noise amplifier and method
JP5170885B2 (ja) * 2008-03-31 2013-03-27 古河電気工業株式会社 電界効果トランジスタ及びその製造方法
EP2293331A1 (en) * 2009-08-27 2011-03-09 Imec Method for designing integrated electronic circuits having ESD protection and circuits obtained thereof
JP2011139383A (ja) * 2009-12-29 2011-07-14 Seiko Epson Corp 集積回路装置及び電子機器
US8427796B2 (en) 2010-01-19 2013-04-23 Qualcomm, Incorporated High voltage, high frequency ESD protection circuit for RF ICs
US8427240B2 (en) 2010-08-06 2013-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Low-noise amplifier with gain enhancement
US8354889B2 (en) * 2011-02-07 2013-01-15 Ubidyne, Inc. Power amplifier with dynamically added supply voltages

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102044715B1 (ko) * 2017-02-28 2019-11-14 가부시키가이샤 무라타 세이사쿠쇼 반도체 장치
US10862444B2 (en) 2018-07-10 2020-12-08 Samsung Electro-Mechanics Co., Ltd. Amplification device of cascode structure
KR102066008B1 (ko) * 2018-07-16 2020-01-14 주식회사 다이얼로그 세미컨덕터 코리아 최대 정격 성능이 개선된 lna

Also Published As

Publication number Publication date
US20140167862A1 (en) 2014-06-19
US9106072B2 (en) 2015-08-11
WO2014100491A1 (en) 2014-06-26
CN104885359A (zh) 2015-09-02
JP2016501501A (ja) 2016-01-18
EP2936678A1 (en) 2015-10-28
JP6584955B2 (ja) 2019-10-02

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PA0105 International application

Patent event date: 20150713

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20181205

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20200212

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20200812

NORF Unpaid initial registration fee
PC1904 Unpaid initial registration fee