KR20140071446A - 연마용 조성물 - Google Patents

연마용 조성물 Download PDF

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Publication number
KR20140071446A
KR20140071446A KR1020147010937A KR20147010937A KR20140071446A KR 20140071446 A KR20140071446 A KR 20140071446A KR 1020147010937 A KR1020147010937 A KR 1020147010937A KR 20147010937 A KR20147010937 A KR 20147010937A KR 20140071446 A KR20140071446 A KR 20140071446A
Authority
KR
South Korea
Prior art keywords
polishing
acid
polishing composition
phase change
abrasive grains
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020147010937A
Other languages
English (en)
Korean (ko)
Inventor
유키노부 요시자키
요시히로 이자와
Original Assignee
가부시키가이샤 후지미인코퍼레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 후지미인코퍼레이티드 filed Critical 가부시키가이샤 후지미인코퍼레이티드
Publication of KR20140071446A publication Critical patent/KR20140071446A/ko
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C09K3/1445—Composite particles, e.g. coated particles the coating consisting exclusively of metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020147010937A 2011-09-30 2012-09-28 연마용 조성물 Ceased KR20140071446A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2011218723 2011-09-30
JPJP-P-2011-218723 2011-09-30
JPJP-P-2012-026290 2012-02-09
JP2012026290A JP2013084876A (ja) 2011-09-30 2012-02-09 研磨用組成物
PCT/JP2012/075052 WO2013047734A1 (ja) 2011-09-30 2012-09-28 研磨用組成物

Publications (1)

Publication Number Publication Date
KR20140071446A true KR20140071446A (ko) 2014-06-11

Family

ID=47995759

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147010937A Ceased KR20140071446A (ko) 2011-09-30 2012-09-28 연마용 조성물

Country Status (5)

Country Link
US (1) US20140251950A1 (enExample)
JP (1) JP2013084876A (enExample)
KR (1) KR20140071446A (enExample)
TW (1) TW201326376A (enExample)
WO (1) WO2013047734A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6222907B2 (ja) * 2012-09-06 2017-11-01 株式会社フジミインコーポレーテッド 研磨用組成物
JP6139975B2 (ja) * 2013-05-15 2017-05-31 株式会社フジミインコーポレーテッド 研磨用組成物
JP6113619B2 (ja) * 2013-09-30 2017-04-12 株式会社フジミインコーポレーテッド 研磨用組成物
US20170342304A1 (en) * 2015-01-19 2017-11-30 Fujimi Incorporated Polishing composition
CN107207268A (zh) 2015-01-19 2017-09-26 福吉米株式会社 改性胶体二氧化硅及其制造方法、以及使用其的研磨剂
JP6189571B1 (ja) * 2015-10-09 2017-08-30 株式会社フジミインコーポレーテッド 研磨用組成物およびこれを用いた研磨方法、ならびにこれらを用いた研磨済研磨対象物の製造方法
WO2017163942A1 (ja) * 2016-03-25 2017-09-28 株式会社フジミインコーポレーテッド 金属を含む層を有する研磨対象物の研磨用組成物
JP6908480B2 (ja) * 2017-09-15 2021-07-28 株式会社フジミインコーポレーテッド 研磨用組成物及びその製造方法並びに研磨方法並びに基板の製造方法
TWI844518B (zh) * 2017-09-26 2024-06-11 日商福吉米股份有限公司 研磨用組合物、研磨用組合物的製造方法、研磨方法及半導體基板的製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1044047A (ja) * 1996-05-10 1998-02-17 Cabot Corp 金属の層と膜に使用される化学的機械的研磨用スラリー
JP2005340554A (ja) * 2004-05-28 2005-12-08 Hitachi Ltd 半導体記憶装置の製造方法
JP2009016821A (ja) * 2007-06-29 2009-01-22 Cheil Industries Inc 相変化メモリデバイスの研磨用化学機械研磨用スラリー組成物およびそれを使った相変化メモリデバイスの研磨方法
JP2009525615A (ja) * 2006-02-01 2009-07-09 キャボット マイクロエレクトロニクス コーポレイション 相変化合金をｃｍｐするための組成物及び方法
JP2010114446A (ja) * 2008-11-05 2010-05-20 Rohm & Haas Electronic Materials Cmp Holdings Inc ケミカルメカニカル研磨組成物及びそれに関連する方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4814502B2 (ja) * 2004-09-09 2011-11-16 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP2008098314A (ja) * 2006-10-10 2008-04-24 Nitta Haas Inc 研磨組成物
US8518296B2 (en) * 2007-02-14 2013-08-27 Micron Technology, Inc. Slurries and methods for polishing phase change materials
WO2009017652A2 (en) * 2007-07-26 2009-02-05 Cabot Microelectronics Corporation Compositions and methods for chemical-mechanical polishing of phase change materials
US7915071B2 (en) * 2007-08-30 2011-03-29 Dupont Air Products Nanomaterials, Llc Method for chemical mechanical planarization of chalcogenide materials
US7678605B2 (en) * 2007-08-30 2010-03-16 Dupont Air Products Nanomaterials Llc Method for chemical mechanical planarization of chalcogenide materials
KR101198100B1 (ko) * 2007-12-11 2012-11-09 삼성전자주식회사 상변화 물질층 패턴의 형성 방법, 상변화 메모리 장치의제조 방법 및 이에 사용되는 상변화 물질층 연마용 슬러리조성물
KR101341875B1 (ko) * 2008-04-30 2013-12-16 한양대학교 산학협력단 상변환 물질 연마용 슬러리 및 이를 이용한 상변환 물질의 패터닝 방법
US20100130013A1 (en) * 2008-11-24 2010-05-27 Applied Materials, Inc. Slurry composition for gst phase change memory materials polishing
US20120003834A1 (en) * 2010-07-01 2012-01-05 Koo Ja-Ho Method Of Polishing Chalcogenide Alloy
KR20120020556A (ko) * 2010-08-30 2012-03-08 삼성전자주식회사 화학적 기계적 연마 공정의 슬러리 조성물 및 이를 이용하는 상변화 메모리 소자의 형성 방법
CN102690604A (zh) * 2011-03-24 2012-09-26 中国科学院上海微系统与信息技术研究所 化学机械抛光液
US8790160B2 (en) * 2011-04-28 2014-07-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for polishing phase change alloys
US8309468B1 (en) * 2011-04-28 2012-11-13 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for polishing germanium-antimony-tellurium alloys
JP2013080751A (ja) * 2011-09-30 2013-05-02 Fujimi Inc 研磨用組成物

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1044047A (ja) * 1996-05-10 1998-02-17 Cabot Corp 金属の層と膜に使用される化学的機械的研磨用スラリー
JP2005340554A (ja) * 2004-05-28 2005-12-08 Hitachi Ltd 半導体記憶装置の製造方法
JP2009525615A (ja) * 2006-02-01 2009-07-09 キャボット マイクロエレクトロニクス コーポレイション 相変化合金をｃｍｐするための組成物及び方法
JP2009016821A (ja) * 2007-06-29 2009-01-22 Cheil Industries Inc 相変化メモリデバイスの研磨用化学機械研磨用スラリー組成物およびそれを使った相変化メモリデバイスの研磨方法
JP2010114446A (ja) * 2008-11-05 2010-05-20 Rohm & Haas Electronic Materials Cmp Holdings Inc ケミカルメカニカル研磨組成物及びそれに関連する方法

Also Published As

Publication number Publication date
TW201326376A (zh) 2013-07-01
JP2013084876A (ja) 2013-05-09
WO2013047734A1 (ja) 2013-04-04
US20140251950A1 (en) 2014-09-11

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