KR20140068852A - 전이금속 질화물을 함유하는 전극을 지닌 울트라커패시터 - Google Patents

전이금속 질화물을 함유하는 전극을 지닌 울트라커패시터 Download PDF

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KR20140068852A
KR20140068852A KR1020147001026A KR20147001026A KR20140068852A KR 20140068852 A KR20140068852 A KR 20140068852A KR 1020147001026 A KR1020147001026 A KR 1020147001026A KR 20147001026 A KR20147001026 A KR 20147001026A KR 20140068852 A KR20140068852 A KR 20140068852A
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transition metal
storage device
energy storage
nitride
electrical energy
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Korean (ko)
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타다오 하시모토
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식스포인트 머터리얼즈 인코퍼레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/30—Electrodes characterised by their material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/0615—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with transition metals other than titanium, zirconium or hafnium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/0615—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with transition metals other than titanium, zirconium or hafnium
    • C01B21/0617—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with transition metals other than titanium, zirconium or hafnium with vanadium, niobium or tantalum
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/30—Electrodes characterised by their material
    • H01G11/50—Electrodes characterised by their material specially adapted for lithium-ion capacitors, e.g. for lithium-doping or for intercalation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
    • H01G11/86—Processes for the manufacture of hybrid or EDL capacitors, or components thereof specially adapted for electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/12—Surface area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/10—Multiple hybrid or EDL capacitors, e.g. arrays or modules
    • H01G11/12—Stacked hybrid or EDL capacitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/13—Energy storage using capacitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/50—Improvements relating to the production of bulk chemicals
    • Y02P20/54—Improvements relating to the production of bulk chemicals using solvents, e.g. supercritical solvents or ionic liquids
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
    • Y02T10/00—Road transport of goods or passengers
    • Y02T10/60—Other road transportation technologies with climate change mitigation effect
    • Y02T10/70—Energy storage systems for electromobility, e.g. batteries
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2991—Coated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2991—Coated
    • Y10T428/2993—Silicic or refractory material containing [e.g., tungsten oxide, glass, cement, etc.]

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Manufacturing & Machinery (AREA)
  • Catalysts (AREA)
  • Electric Double-Layer Capacitors Or The Like (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020147001026A 2011-06-27 2012-06-15 전이금속 질화물을 함유하는 전극을 지닌 울트라커패시터 Ceased KR20140068852A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161501656P 2011-06-27 2011-06-27
US61/501,656 2011-06-27
US201161505758P 2011-07-08 2011-07-08
US61/505,758 2011-07-08
PCT/US2012/042679 WO2013003073A1 (en) 2011-06-27 2012-06-15 Ultracapacitors with electrodes containing transition metal nitride

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KR20140068852A true KR20140068852A (ko) 2014-06-09

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KR1020147001026A Ceased KR20140068852A (ko) 2011-06-27 2012-06-15 전이금속 질화물을 함유하는 전극을 지닌 울트라커패시터
KR1020147001024A Ceased KR20140053100A (ko) 2011-06-27 2012-06-15 전이금속 질화물의 합성 방법 및 전이금속 질화물

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US (2) US8920762B2 (enExample)
EP (2) EP2724356B1 (enExample)
JP (3) JP6095657B2 (enExample)
KR (2) KR20140068852A (enExample)
WO (2) WO2013003073A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2724356B1 (en) 2011-06-27 2018-10-03 SixPoint Materials, Inc. Ultracapacitors with electrodes containing transition metal nitride
CN104024152A (zh) * 2011-10-24 2014-09-03 加利福尼亚大学董事会 利用碱土金属减少杂质掺入iii-族氮化物晶体
KR101554675B1 (ko) 2013-11-28 2015-09-22 한국화학연구원 질화물 형광체 분말 및 이의 제조방법
CN105621377B (zh) * 2014-10-28 2017-11-24 中国石油化工股份有限公司 基于金属有机骨架材料的氮化铁的制备方法
US9822006B2 (en) * 2015-04-09 2017-11-21 The Boeing Company Method to form Fe16N2
DE102016215709A1 (de) * 2015-08-28 2017-03-02 Tsubakimoto Chain Co. Kettenkomponente und Kette
JP6712798B2 (ja) * 2016-01-29 2020-06-24 国立大学法人東京工業大学 窒化銅半導体およびその製造方法
JP6657042B2 (ja) * 2016-08-09 2020-03-04 太平洋セメント株式会社 Ｔａ５Ｎ６の製造方法
WO2018061644A1 (ja) * 2016-09-30 2018-04-05 富士フイルム株式会社 金属窒化物含有粒子、分散組成物、硬化性組成物、硬化膜、及びそれらの製造方法、並びにカラーフィルタ、固体撮像素子、固体撮像装置、赤外線センサ
JP2021504116A (ja) * 2017-11-29 2021-02-15 コリア インスティチュート オブ エナジー リサーチ ガス窒化又は液体窒化処理されたコアシェル触媒の製造方法
CN109182887B (zh) * 2018-11-18 2020-03-10 湖南众鑫新材料科技股份有限公司 一种氮化钒铁合金的制备方法
CN112919428B (zh) * 2019-12-06 2023-09-05 中国科学院过程工程研究所 一种氮化钒微球及其制备方法和用途
CN110817813B (zh) * 2019-12-19 2022-11-04 湖南众鑫新材料科技股份有限公司 一种纳米晶氮化钒粉体的制备方法
JP7326183B2 (ja) * 2020-02-13 2023-08-15 太平洋セメント株式会社 窒化ランタン
CN112058299B (zh) * 2020-09-10 2021-11-16 中山大学 多壳层镍基氮化物纳米复合材料及其制备方法与应用
EP3975213B1 (en) 2020-09-28 2024-12-11 Jozef Stefan Institute Method for manufacturing hybrid binder-free electrodes for electrochemical supercapacitors
CN112475302B (zh) * 2020-11-16 2023-02-24 安徽省瑞峻粉末金属材料有限公司 一种超细纳米晶vn合金粉末的制备方法
CN113135553B (zh) * 2021-04-22 2022-11-04 陕西科技大学 一种氮化钨包覆氮化钒粉体及其制备方法和应用
CN114180539B (zh) * 2021-12-24 2023-08-15 广东省科学院半导体研究所 纳米多孔氮化钒材料及其制备方法和储能器件
CN114974937B (zh) * 2022-06-29 2022-11-25 哈尔滨理工大学 一种铁掺杂四氧化三钴/氮化钴异质结构纳米线电极材料的制备方法和应用
CN115537872B (zh) * 2022-10-11 2023-12-15 重庆大学 一种双掺杂高效电解水催化剂及其制备方法和应用
CN118179554A (zh) * 2022-12-13 2024-06-14 中国科学院大连化学物理研究所 一种复合催化剂及其制备方法和应用
CN118420351B (zh) * 2024-04-29 2026-06-02 深圳技术大学 一种过渡金属氮化物高熵陶瓷材料及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005535639A (ja) * 2002-06-26 2005-11-24 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー ヘキサフルオロプロピレンの合成
JP2006513122A (ja) * 2002-12-27 2006-04-20 ゼネラル・エレクトリック・カンパニイ 窒化ガリウム結晶、ホモエピタキシャル窒化ガリウムを基材とするデバイス、及びその製造方法

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54145400A (en) * 1978-05-08 1979-11-13 Ube Ind Ltd Production of metal nitride powder
US4515763A (en) * 1981-07-15 1985-05-07 Board Of Trustees Of Leland Stanford Jr. Univeristy High specific surface area carbides and nitrides
US4851206A (en) * 1981-07-15 1989-07-25 The Board Of Trustees Of The Leland Stanford Junior University, Stanford University Methods and compostions involving high specific surface area carbides and nitrides
US5680292A (en) 1994-12-12 1997-10-21 T/J Technologies, Inc. High surface area nitride, carbide and boride electrodes and methods of fabrication thereof
JP2001522133A (ja) * 1997-10-30 2001-11-13 ティ／ジェイ テクノロジーズ インコーポレイテッド 遷移金属系セラミック材料及びその製品
CN100344004C (zh) 1997-10-30 2007-10-17 住友电气工业株式会社 GaN单晶衬底及其制造方法
US6168694B1 (en) * 1999-02-04 2001-01-02 Chemat Technology, Inc. Methods for and products of processing nanostructure nitride, carbonitride and oxycarbonitride electrode power materials by utilizing sol gel technology for supercapacitor applications
US6743947B1 (en) 1999-05-10 2004-06-01 The United States Of America As Represented By The Secretary Of The Army Electrochemically stable onium salts and electrolytes containing such for electrochemical capacitors
WO2003035945A2 (en) 2001-10-26 2003-05-01 Ammono Sp. Zo.O. Substrate for epitaxy
WO2004003261A1 (en) 2002-06-26 2004-01-08 Ammono Sp. Z O.O. Process for obtaining of bulk monocrystallline gallium-containing nitride
KR101088991B1 (ko) 2002-12-11 2011-12-01 니치아 카가쿠 고교 가부시키가이샤 벌크 단결정 갈륨-함유 질화물의 제조공정
JP4433696B2 (ja) * 2003-06-17 2010-03-17 三菱化学株式会社 窒化物結晶の製造方法
JP2005183556A (ja) * 2003-12-18 2005-07-07 Sii Micro Parts Ltd 平板型電気化学セル
PL371405A1 (pl) 2004-11-26 2006-05-29 Ammono Sp.Z O.O. Sposób wytwarzania objętościowych monokryształów metodą wzrostu na zarodku
US8709371B2 (en) 2005-07-08 2014-04-29 The Regents Of The University Of California Method for growing group III-nitride crystals in supercritical ammonia using an autoclave
KR101351498B1 (ko) 2005-12-20 2014-01-15 모멘티브 퍼포먼스 머티리얼즈 인크. 결정성 조성물, 소자 및 관련 방법
JP2009533303A (ja) * 2006-04-07 2009-09-17 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 大表面積窒化ガリウム結晶の成長
EP2041794A4 (en) 2006-06-21 2010-07-21 Univ California OPTOELECTRONIC AND ELECTRONIC COMPONENTS USING AN N-FACE OR M-PLANE GaN SUBSTRATE FROM AMMONOTHERMAL BREEDING
JP5196118B2 (ja) * 2006-09-14 2013-05-15 信越化学工業株式会社 非水電解質二次電池及びその製造方法
JP2010510674A (ja) 2006-11-15 2010-04-02 エナジーツー・インコーポレイテッド 電気２重層キャパシタ装置
WO2009155043A1 (en) 2008-05-28 2009-12-23 University Of Pittsburgh - Of The Commonwealth System Of Higher Education Ternary metal transition metal non-oxide nano-particles, methods and applications thereof
JP2010040480A (ja) * 2008-08-08 2010-02-18 Oita Univ 電極用材料、電極、リチウムイオン電池、電気二重層キャパシタ、電極用材料の製造方法
KR101024940B1 (ko) 2009-02-03 2011-03-31 삼성전기주식회사 표면 산화된 전이금속질화물 에어로젤을 이용한 하이브리드수퍼커패시터
US20110149473A1 (en) 2009-12-21 2011-06-23 Eilertsen Thor E Energy storage in edlcs by utilizing a dielectric layer
JP2010100526A (ja) * 2010-01-27 2010-05-06 Lucelabo:Kk 遷移金属窒化物の製造方法
WO2012087409A2 (en) * 2010-10-12 2012-06-28 The Regents Of The University Of Michigan High performance transition metal carbide and nitride and boride based asymmetric supercapacitors
EP2724356B1 (en) 2011-06-27 2018-10-03 SixPoint Materials, Inc. Ultracapacitors with electrodes containing transition metal nitride

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005535639A (ja) * 2002-06-26 2005-11-24 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー ヘキサフルオロプロピレンの合成
JP2006513122A (ja) * 2002-12-27 2006-04-20 ゼネラル・エレクトリック・カンパニイ 窒化ガリウム結晶、ホモエピタキシャル窒化ガリウムを基材とするデバイス、及びその製造方法

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
일본 공표특허공보 특표2005-535639호(2005.11.24.) 1부. *
일본 공표특허공보 특표2006-513122호(2006.04.20.) 1부. *
일본 공표특허공보 특표평10-510679호(1998.10.13.) 1부. *

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US20120328883A1 (en) 2012-12-27
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