KR20140059985A - 발광소자 - Google Patents

발광소자 Download PDF

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Publication number
KR20140059985A
KR20140059985A KR1020120126523A KR20120126523A KR20140059985A KR 20140059985 A KR20140059985 A KR 20140059985A KR 1020120126523 A KR1020120126523 A KR 1020120126523A KR 20120126523 A KR20120126523 A KR 20120126523A KR 20140059985 A KR20140059985 A KR 20140059985A
Authority
KR
South Korea
Prior art keywords
light emitting
electrode
semiconductor layer
conductive
disposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020120126523A
Other languages
English (en)
Korean (ko)
Inventor
김성균
최병연
주현승
범희영
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020120126523A priority Critical patent/KR20140059985A/ko
Priority to US14/072,070 priority patent/US9281449B2/en
Priority to JP2013231700A priority patent/JP2014096591A/ja
Priority to EP13192161.1A priority patent/EP2731137B1/en
Priority to CN201310553351.0A priority patent/CN103811623B/zh
Publication of KR20140059985A publication Critical patent/KR20140059985A/ko
Priority to US15/007,723 priority patent/US9601666B2/en
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates

Landscapes

  • Led Devices (AREA)
KR1020120126523A 2012-11-09 2012-11-09 발광소자 Ceased KR20140059985A (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020120126523A KR20140059985A (ko) 2012-11-09 2012-11-09 발광소자
US14/072,070 US9281449B2 (en) 2012-11-09 2013-11-05 Light emitting device
JP2013231700A JP2014096591A (ja) 2012-11-09 2013-11-08 発光素子
EP13192161.1A EP2731137B1 (en) 2012-11-09 2013-11-08 Light emitting device
CN201310553351.0A CN103811623B (zh) 2012-11-09 2013-11-08 发光器件
US15/007,723 US9601666B2 (en) 2012-11-09 2016-01-27 Light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120126523A KR20140059985A (ko) 2012-11-09 2012-11-09 발광소자

Publications (1)

Publication Number Publication Date
KR20140059985A true KR20140059985A (ko) 2014-05-19

Family

ID=49619793

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120126523A Ceased KR20140059985A (ko) 2012-11-09 2012-11-09 발광소자

Country Status (5)

Country Link
US (2) US9281449B2 (enExample)
EP (1) EP2731137B1 (enExample)
JP (1) JP2014096591A (enExample)
KR (1) KR20140059985A (enExample)
CN (1) CN103811623B (enExample)

Cited By (1)

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KR20160139181A (ko) * 2015-05-27 2016-12-07 서울바이오시스 주식회사 발광소자

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US11792898B2 (en) 2012-07-01 2023-10-17 Ideal Industries Lighting Llc Enhanced fixtures for area lighting
US11160148B2 (en) 2017-06-13 2021-10-26 Ideal Industries Lighting Llc Adaptive area lamp
TWI532215B (zh) * 2013-12-26 2016-05-01 隆達電子股份有限公司 發光二極體元件
KR102212666B1 (ko) 2014-06-27 2021-02-05 엘지이노텍 주식회사 발광소자
TWD169527S (zh) * 2014-08-20 2015-08-01 晶元光電股份有限公司 發光二極體元件之部分
US10090449B2 (en) * 2014-11-18 2018-10-02 PlayNitride Inc. Light emitting device
TWD172675S (zh) * 2014-12-19 2015-12-21 晶元光電股份有限公司 發光二極體陣列之部分
CN110690249B (zh) * 2015-02-13 2024-01-19 首尔伟傲世有限公司 发光元件
US9905729B2 (en) * 2015-03-27 2018-02-27 Seoul Viosys Co., Ltd. Light emitting diode
CN104766914A (zh) * 2015-04-20 2015-07-08 电子科技大学 一种高取光率的高压led芯片结构
TWI723897B (zh) 2015-04-22 2021-04-01 新世紀光電股份有限公司 發光元件之製造方法
JP6474044B2 (ja) 2015-09-15 2019-02-27 豊田合成株式会社 発光ユニット
TWD178892S (zh) * 2015-11-17 2016-10-11 晶元光電股份有限公司 發光二極體陣列之部分
KR20170104031A (ko) * 2016-03-03 2017-09-14 삼성전자주식회사 패키지 기판 및 발광소자 패키지
US10529696B2 (en) 2016-04-12 2020-01-07 Cree, Inc. High density pixelated LED and devices and methods thereof
TWD181129S (zh) * 2016-05-11 2017-02-01 晶元光電股份有限公司 發光二極體陣列之部分
US10734363B2 (en) 2017-08-03 2020-08-04 Cree, Inc. High density pixelated-LED chips and chip array devices
TWI780195B (zh) 2017-08-03 2022-10-11 美商克里公司 高密度像素化發光二極體晶片和晶片陣列裝置以及製造方法
US10529773B2 (en) 2018-02-14 2020-01-07 Cree, Inc. Solid state lighting devices with opposing emission directions
US10903265B2 (en) 2018-12-21 2021-01-26 Cree, Inc. Pixelated-LED chips and chip array devices, and fabrication methods
JP7348520B2 (ja) * 2018-12-25 2023-09-21 日亜化学工業株式会社 発光装置及び表示装置
TWI830759B (zh) * 2019-07-31 2024-02-01 晶元光電股份有限公司 發光二極體元件及其製造方法
TWI818070B (zh) * 2019-08-30 2023-10-11 晶元光電股份有限公司 發光元件及其製造方法
EP4052296A1 (en) 2019-10-29 2022-09-07 Creeled, Inc. Texturing for high density pixelated-led chips
US11437548B2 (en) 2020-10-23 2022-09-06 Creeled, Inc. Pixelated-LED chips with inter-pixel underfill materials, and fabrication methods
CN114937679A (zh) * 2021-04-20 2022-08-23 友达光电股份有限公司 发光二极管元件以及发光二极管电路
US20230007967A1 (en) * 2021-07-12 2023-01-12 Xiamen San'an Optoelectronics Co., Ltd. Light emitting diode device
TWI827271B (zh) * 2022-09-23 2023-12-21 國立清華大學 光電元件
WO2025162989A1 (en) * 2024-01-29 2025-08-07 Ams-Osram International Gmbh High-speed optoelectronic device and method for processing the same

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Also Published As

Publication number Publication date
EP2731137A3 (en) 2016-01-06
EP2731137A2 (en) 2014-05-14
CN103811623B (zh) 2017-12-19
US9281449B2 (en) 2016-03-08
JP2014096591A (ja) 2014-05-22
US20140131657A1 (en) 2014-05-15
US9601666B2 (en) 2017-03-21
US20160225954A1 (en) 2016-08-04
CN103811623A (zh) 2014-05-21
EP2731137B1 (en) 2020-08-12

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